JP2021048168A5 - - Google Patents

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Publication number
JP2021048168A5
JP2021048168A5 JP2019168401A JP2019168401A JP2021048168A5 JP 2021048168 A5 JP2021048168 A5 JP 2021048168A5 JP 2019168401 A JP2019168401 A JP 2019168401A JP 2019168401 A JP2019168401 A JP 2019168401A JP 2021048168 A5 JP2021048168 A5 JP 2021048168A5
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Japan
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semiconductor substrate
insulating member
semiconductor device
region
insulating
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JP2019168401A
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English (en)
Japanese (ja)
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JP2021048168A (ja
JP7175864B2 (ja
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Priority to JP2019168401A priority Critical patent/JP7175864B2/ja
Priority claimed from JP2019168401A external-priority patent/JP7175864B2/ja
Priority to US16/702,790 priority patent/US20210083089A1/en
Priority to CN201911366432.3A priority patent/CN112531028B/zh
Publication of JP2021048168A publication Critical patent/JP2021048168A/ja
Publication of JP2021048168A5 publication Critical patent/JP2021048168A5/ja
Priority to US17/677,578 priority patent/US12356657B2/en
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Publication of JP7175864B2 publication Critical patent/JP7175864B2/ja
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JP2019168401A 2019-09-17 2019-09-17 半導体装置 Active JP7175864B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019168401A JP7175864B2 (ja) 2019-09-17 2019-09-17 半導体装置
US16/702,790 US20210083089A1 (en) 2019-09-17 2019-12-04 Semiconductor device
CN201911366432.3A CN112531028B (zh) 2019-09-17 2019-12-26 半导体装置
US17/677,578 US12356657B2 (en) 2019-09-17 2022-02-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019168401A JP7175864B2 (ja) 2019-09-17 2019-09-17 半導体装置

Publications (3)

Publication Number Publication Date
JP2021048168A JP2021048168A (ja) 2021-03-25
JP2021048168A5 true JP2021048168A5 (enExample) 2021-10-14
JP7175864B2 JP7175864B2 (ja) 2022-11-21

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JP2019168401A Active JP7175864B2 (ja) 2019-09-17 2019-09-17 半導体装置

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US (2) US20210083089A1 (enExample)
JP (1) JP7175864B2 (enExample)
CN (1) CN112531028B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7611072B2 (ja) * 2021-05-21 2025-01-09 ルネサスエレクトロニクス株式会社 半導体装置
JP7596242B2 (ja) * 2021-09-22 2024-12-09 株式会社東芝 半導体装置
CN115881779B (zh) * 2023-02-08 2023-05-30 合肥新晶集成电路有限公司 晶体管结构、半导体结构及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100289049B1 (ko) 1997-12-17 2001-10-24 정선종 이중필드판구조를갖는전력소자
JPH11243198A (ja) * 1998-02-24 1999-09-07 Matsushita Electric Works Ltd 半導体装置及びその製造方法
JP5161439B2 (ja) * 2006-07-31 2013-03-13 オンセミコンダクター・トレーディング・リミテッド 半導体装置
US8754469B2 (en) 2010-10-26 2014-06-17 Texas Instruments Incorporated Hybrid active-field gap extended drain MOS transistor
JP2013201191A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 半導体装置
JP2013232533A (ja) * 2012-04-27 2013-11-14 Rohm Co Ltd 半導体装置および半導体装置の製造方法
JP5973824B2 (ja) 2012-07-25 2016-08-23 旭化成エレクトロニクス株式会社 電界効果トランジスタ及び半導体装置
JP6284421B2 (ja) 2014-05-09 2018-02-28 ルネサスエレクトロニクス株式会社 半導体装置
CN106549052B (zh) * 2015-09-17 2021-05-25 联华电子股份有限公司 横向扩散金属氧化物半导体晶体管及其制作方法
KR102286013B1 (ko) * 2015-10-07 2021-08-05 에스케이하이닉스 시스템아이씨 주식회사 트랜치 절연 필드플레이트 및 금속 필드플레이트를 갖는 수평형 고전압 집적소자
US9799764B2 (en) 2015-12-31 2017-10-24 Sk Hynix System Ic Inc. Lateral power integrated devices having low on-resistance
JP6273329B2 (ja) * 2016-08-15 2018-01-31 ローム株式会社 半導体装置
JP2019165094A (ja) * 2018-03-19 2019-09-26 株式会社東芝 半導体装置

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