CN112531028B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN112531028B
CN112531028B CN201911366432.3A CN201911366432A CN112531028B CN 112531028 B CN112531028 B CN 112531028B CN 201911366432 A CN201911366432 A CN 201911366432A CN 112531028 B CN112531028 B CN 112531028B
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CN
China
Prior art keywords
insulating member
semiconductor device
semiconductor substrate
silicon substrate
portions
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Active
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CN201911366432.3A
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English (en)
Chinese (zh)
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CN112531028A (zh
Inventor
小松香奈子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Publication of CN112531028A publication Critical patent/CN112531028A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

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  • Insulated Gate Type Field-Effect Transistor (AREA)
CN201911366432.3A 2019-09-17 2019-12-26 半导体装置 Active CN112531028B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019168401A JP7175864B2 (ja) 2019-09-17 2019-09-17 半導体装置
JP2019-168401 2019-09-17

Publications (2)

Publication Number Publication Date
CN112531028A CN112531028A (zh) 2021-03-19
CN112531028B true CN112531028B (zh) 2024-05-17

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US (2) US20210083089A1 (enExample)
JP (1) JP7175864B2 (enExample)
CN (1) CN112531028B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7611072B2 (ja) * 2021-05-21 2025-01-09 ルネサスエレクトロニクス株式会社 半導体装置
JP7596242B2 (ja) * 2021-09-22 2024-12-09 株式会社東芝 半導体装置
CN115881779B (zh) * 2023-02-08 2023-05-30 合肥新晶集成电路有限公司 晶体管结构、半导体结构及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11243198A (ja) * 1998-02-24 1999-09-07 Matsushita Electric Works Ltd 半導体装置及びその製造方法
JP2008034738A (ja) * 2006-07-31 2008-02-14 Sanyo Electric Co Ltd 半導体装置
CN103325827A (zh) * 2012-03-23 2013-09-25 株式会社东芝 半导体装置
JP2013232533A (ja) * 2012-04-27 2013-11-14 Rohm Co Ltd 半導体装置および半導体装置の製造方法
JP2016225644A (ja) * 2016-08-15 2016-12-28 ローム株式会社 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100289049B1 (ko) 1997-12-17 2001-10-24 정선종 이중필드판구조를갖는전력소자
US8754469B2 (en) 2010-10-26 2014-06-17 Texas Instruments Incorporated Hybrid active-field gap extended drain MOS transistor
JP5973824B2 (ja) 2012-07-25 2016-08-23 旭化成エレクトロニクス株式会社 電界効果トランジスタ及び半導体装置
JP6284421B2 (ja) 2014-05-09 2018-02-28 ルネサスエレクトロニクス株式会社 半導体装置
CN106549052B (zh) * 2015-09-17 2021-05-25 联华电子股份有限公司 横向扩散金属氧化物半导体晶体管及其制作方法
KR102286013B1 (ko) * 2015-10-07 2021-08-05 에스케이하이닉스 시스템아이씨 주식회사 트랜치 절연 필드플레이트 및 금속 필드플레이트를 갖는 수평형 고전압 집적소자
US9799764B2 (en) 2015-12-31 2017-10-24 Sk Hynix System Ic Inc. Lateral power integrated devices having low on-resistance
JP2019165094A (ja) * 2018-03-19 2019-09-26 株式会社東芝 半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11243198A (ja) * 1998-02-24 1999-09-07 Matsushita Electric Works Ltd 半導体装置及びその製造方法
JP2008034738A (ja) * 2006-07-31 2008-02-14 Sanyo Electric Co Ltd 半導体装置
CN103325827A (zh) * 2012-03-23 2013-09-25 株式会社东芝 半导体装置
JP2013232533A (ja) * 2012-04-27 2013-11-14 Rohm Co Ltd 半導体装置および半導体装置の製造方法
EP2843707A1 (en) * 2012-04-27 2015-03-04 Rohm Co., Ltd. Semiconductor device and semiconductor device manufacturing method
JP2016225644A (ja) * 2016-08-15 2016-12-28 ローム株式会社 半導体装置

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US20210083089A1 (en) 2021-03-18
JP2021048168A (ja) 2021-03-25
CN112531028A (zh) 2021-03-19
US12356657B2 (en) 2025-07-08
JP7175864B2 (ja) 2022-11-21
US20220181486A1 (en) 2022-06-09

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