JP2021034543A5 - - Google Patents

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Publication number
JP2021034543A5
JP2021034543A5 JP2019152836A JP2019152836A JP2021034543A5 JP 2021034543 A5 JP2021034543 A5 JP 2021034543A5 JP 2019152836 A JP2019152836 A JP 2019152836A JP 2019152836 A JP2019152836 A JP 2019152836A JP 2021034543 A5 JP2021034543 A5 JP 2021034543A5
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JP
Japan
Prior art keywords
semiconductor region
electrode
insulating portion
insulating
length
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JP2019152836A
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English (en)
Japanese (ja)
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JP7164497B2 (ja
JP2021034543A (ja
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Priority to JP2019152836A priority Critical patent/JP7164497B2/ja
Priority claimed from JP2019152836A external-priority patent/JP7164497B2/ja
Priority to CN202010057721.1A priority patent/CN112420832B/zh
Priority to US16/792,940 priority patent/US11133411B2/en
Publication of JP2021034543A publication Critical patent/JP2021034543A/ja
Publication of JP2021034543A5 publication Critical patent/JP2021034543A5/ja
Application granted granted Critical
Publication of JP7164497B2 publication Critical patent/JP7164497B2/ja
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JP2019152836A 2019-08-23 2019-08-23 半導体装置 Active JP7164497B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2019152836A JP7164497B2 (ja) 2019-08-23 2019-08-23 半導体装置
CN202010057721.1A CN112420832B (zh) 2019-08-23 2020-01-19 半导体装置
US16/792,940 US11133411B2 (en) 2019-08-23 2020-02-18 Semiconductor device with reduced on-resistance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019152836A JP7164497B2 (ja) 2019-08-23 2019-08-23 半導体装置

Publications (3)

Publication Number Publication Date
JP2021034543A JP2021034543A (ja) 2021-03-01
JP2021034543A5 true JP2021034543A5 (enExample) 2021-10-28
JP7164497B2 JP7164497B2 (ja) 2022-11-01

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ID=74647106

Family Applications (1)

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JP2019152836A Active JP7164497B2 (ja) 2019-08-23 2019-08-23 半導体装置

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US (1) US11133411B2 (enExample)
JP (1) JP7164497B2 (enExample)
CN (1) CN112420832B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7319491B2 (ja) * 2019-12-06 2023-08-02 株式会社東芝 半導体装置及びその製造方法
JP7608304B2 (ja) * 2021-09-17 2025-01-06 株式会社東芝 半導体装置
JP7692378B2 (ja) 2022-02-15 2025-06-13 株式会社東芝 半導体装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08264764A (ja) * 1995-03-22 1996-10-11 Toshiba Corp 半導体装置
DE102005041358B4 (de) * 2005-08-31 2012-01-19 Infineon Technologies Austria Ag Feldplatten-Trenchtransistor sowie Verfahren zu dessen Herstellung
WO2008039459A1 (en) 2006-09-27 2008-04-03 Maxpower Semiconductor, Inc. Power mosfet with recessed field plate
JP2009054638A (ja) * 2007-08-23 2009-03-12 Toyota Motor Corp 半導体装置とその製造方法
US20100155831A1 (en) 2008-12-20 2010-06-24 Power Integrations, Inc. Deep trench insulated gate bipolar transistor
US8680607B2 (en) * 2011-06-20 2014-03-25 Maxpower Semiconductor, Inc. Trench gated power device with multiple trench width and its fabrication process
JP2013058575A (ja) * 2011-09-07 2013-03-28 Toshiba Corp 半導体装置及びその製造方法
JP2013214551A (ja) 2012-03-30 2013-10-17 Toshiba Corp 半導体装置及びその製造方法
WO2015178024A1 (ja) * 2014-05-23 2015-11-26 パナソニックＩｐマネジメント株式会社 炭化珪素半導体装置
JP6509673B2 (ja) * 2015-08-10 2019-05-08 株式会社東芝 半導体装置
JP6416142B2 (ja) * 2016-03-11 2018-10-31 株式会社東芝 半導体装置
JP6283709B2 (ja) * 2016-03-18 2018-02-21 株式会社豊田中央研究所 半導体装置
JP6926012B2 (ja) * 2018-02-14 2021-08-25 株式会社東芝 半導体装置
JP7005453B2 (ja) * 2018-08-08 2022-01-21 株式会社東芝 半導体装置
JP7193371B2 (ja) * 2019-02-19 2022-12-20 株式会社東芝 半導体装置

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