JP2021031310A - セラミックス基板、回路基板及びその製造方法、並びにパワーモジュール - Google Patents
セラミックス基板、回路基板及びその製造方法、並びにパワーモジュール Download PDFInfo
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- JP2021031310A JP2021031310A JP2019149319A JP2019149319A JP2021031310A JP 2021031310 A JP2021031310 A JP 2021031310A JP 2019149319 A JP2019149319 A JP 2019149319A JP 2019149319 A JP2019149319 A JP 2019149319A JP 2021031310 A JP2021031310 A JP 2021031310A
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- 239000000758 substrate Substances 0.000 title claims abstract description 118
- 239000000919 ceramic Substances 0.000 title claims abstract description 107
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 230000003746 surface roughness Effects 0.000 claims abstract description 91
- 239000004020 conductor Substances 0.000 claims description 56
- 239000011347 resin Substances 0.000 claims description 35
- 229920005989 resin Polymers 0.000 claims description 35
- 238000005530 etching Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 229910044991 metal oxide Inorganic materials 0.000 claims description 17
- 150000004706 metal oxides Chemical class 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 9
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 239000000470 constituent Substances 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- 238000005304 joining Methods 0.000 claims description 2
- 239000000843 powder Substances 0.000 description 21
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 238000005219 brazing Methods 0.000 description 12
- 239000002994 raw material Substances 0.000 description 10
- 239000011777 magnesium Substances 0.000 description 9
- 239000000395 magnesium oxide Substances 0.000 description 9
- 238000005245 sintering Methods 0.000 description 8
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000005452 bending Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 238000000879 optical micrograph Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000007788 roughening Methods 0.000 description 3
- 238000005488 sandblasting Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
Description
<窒化ケイ素焼結体の作製>
窒化ケイ素粉末と、焼結助剤として、酸化マグネシウム粉末、及び酸化イットリウム粉末を準備した。これらを、Si3N4:Y2O3:MgO=94.0:3.0:3.0(質量比)で配合して原料粉末を得た。この原料粉末を、一軸加圧成形し、成形体を作製した。この成形体を、カーボンヒータを備える電気炉中に配置し、窒素ガスの雰囲気下、1800℃で12時間焼成して、平板形状の窒化ケイ素焼結体を得た。
窒化ケイ素焼結体の一部を、テープでマスキングした後、市販のエッチング液(塩化第二銅水溶液)に60分間浸漬した。エッチング液から窒化ケイ素焼結体を取り出した後、再度同じエッチング液に窒化ケイ素焼結体を60分間浸漬した。このように2回エッチング処理を行ってセラミックス基板を得た。テープを取り外して、得られたセラミックス基板の外観を光学顕微鏡で観察した。
図4は、セラミックス基板の光学顕微鏡写真である。図4に示すように、セラミックス基板の主面には、濃淡が互いに異なる第1領域10と第2領域20が形成されていた。それぞれの領域における表面粗さを、小型表面粗さ測定機(株式会社ミツトヨ製、商品名:サーフテスト SJ−310)を用いて測定した。その結果、第1領域10の表面粗さRa1は0.25μmであり、第2領域20の表面粗さRa2は0.50μmであった。
セラミックス基板を厚さ方向に切断し、主面近傍の断面を、走査型電子顕微鏡(SEN)を用いて観察した。図5は、実施例1のセラミックス基板の第2領域における主面近傍の断面を示すSEM写真である。図5に示すように、第2領域では表面が粗面化されていることが確認された。
<窒化ケイ素焼結体の作製>
窒化ケイ素粉末と、焼結助剤として、酸化マグネシウム粉末、酸化イットリウム粉末及び二酸化珪素粉末を準備した。これらを、Si3N4:Y2O3:MgO:SiO2=91.35:6.0:1.58:1.07(質量比)で配合して原料粉末を得た。この原料粉末を用いたこと以外は実施例1と同じ手順で、平板形状の窒化ケイ素焼結体を得た。そして実施例1と同じ手順でエッチングを行ってセラミックス基板を得た。テープを取り外して、得られたセラミックス基板の外観を光学顕微鏡で観察した。
図6は、セラミックス基板の光学顕微鏡写真である。図6に示すように、セラミックス基板の主面には、濃淡が互いに異なる第1領域10と第2領域が形成されていた。ただし、実施例1に比べると、濃淡の差が小さかった。第1領域10の表面粗さRa1は0.30μmであり、第2領域20の表面粗さRa2は0.31μmであった。
実施例1と同様に、主面近傍の断面を、走査型電子顕微鏡(SEN)を用いて観察した。図7は、実施例2のセラミックス基板の第2領域における主面近傍の断面を示すSEM写真である。図7に示すように、第2領域では表面が粗面化されていることが確認された。ただし、図5に示されるほど粗面化されていなかった。
焼結助剤として、Mgに対するYの質量比が、それぞれMgO及びY2O3に換算したときに0.1である金属酸化物粉末を準備した。これと窒化ケイ素粉末と配合して原料粉末を得た。この原料粉末を用いたこと以外は、実施例1と同じ手順で、平板形状の窒化ケイ素焼結体を得た。実施例1と同様にエッチング処理を行ったが、主面の粗化が十分に進行せず、主面の表面粗さを調整することができなかった。ただし、エッチング以外の方法(例えば、サンドブラスト)を用いれば、主面の一部を粗化して、実施例1,2と同様の第1領域及び第2領域を形成することは可能である。
焼結助剤として、Mgに対するYの質量比が、それぞれMgO及びY2O3に換算したときに5.0である金属酸化物粉末を準備した。これと窒化ケイ素粉末と配合して原料粉末を得た。この原料粉末を用いたこと以外は、実施例1と同じ手順で、平板形状の窒化ケイ素焼結体を得た。実施例1と同様にエッチング処理を行ったが、主面の粗化が十分に進行せず、主面の表面粗さを調整することができなかった。ただし、参考例1と同様に、エッチング以外の方法(例えば、サンドブラスト)を用いれば、主面の一部を粗化して、実施例1,2と同様の第1領域及び第2領域を形成することは可能である。
Claims (12)
- 少なくとも一つの主面において、表面粗さが互いに異なる第1領域と第2領域とを有する、セラミックス基板。
- 前記第1領域における表面粗さRa1に対する、前記第2領域における表面粗さRa2の比が、1.5以上である、請求項1に記載のセラミックス基板。
- 前記第2領域は、第1領域よりも大きい表面粗さRa2を有しており、
前記第2領域の少なくとも一部は樹脂と接着する、請求項1又は2に記載のセラミックス基板。 - 前記第1領域は、第2領域よりも小さい表面粗さRa1を有しており、
前記第1領域の少なくとも一部には導体部が接合される、請求項1〜3のいずれか一項に記載のセラミックス基板。 - 窒化ケイ素と、構成元素としてY及びMgを有する金属酸化物とを含有し、
前記金属酸化物におけるMgに対するYの質量比が、それぞれMgO及びY2O3に換算したときに0.3〜3である、請求項1〜4のいずれか一項に記載のセラミックス基板。 - 前記主面における前記第1領域の面積比率が30〜90%であり、前記主面における前記第2領域の面積比率が10〜70%である、請求項1〜5のいずれか一項に記載のセラミックス基板。
- セラミックス成分と、当該セラミックス成分とは異なる、構成元素としてY及びMgを有する金属酸化物とを含有し、
前記第1領域と前記第2領域における、前記セラミックス成分に対する前記金属酸化物の割合は互いに異なる、請求項1〜6のいずれか一項に記載のセラミックス基板。 - 請求項1〜7のいずれか一項に記載のセラミックス基板と、
前記第1領域の少なくとも一部に接合される導体部と、を備え、
前記第1領域は、第2領域よりも小さい表面粗さRa1を有する、回路基板。 - 前記第2領域の少なくとも一部と樹脂とが接着しており、
前記第2領域は、第1領域よりも大きい表面粗さRa2を有する、請求項8に記載の回路基板。 - 請求項8又は9に記載の回路基板と、
前記回路基板を封止する樹脂と、を備え、
前記第2領域の少なくとも一部と前記樹脂とが接着している、パワーモジュール。 - 前記回路基板の前記導体部と、前記導体部と電気的に接続される半導体素子と、を備え、
前記半導体素子は前記回路基板とともに前記樹脂によって封止されている、請求項10に記載のパワーモジュール。 - 表面粗さRa1を有するセラミックス基板の主面に金属基板を接合して複合基板を得る工程と、
前記複合基板における前記金属基板の一部をエッチングによって除去して、導体部を形成する工程と、を有し、
前記エッチングによって、前記セラミックス基板の前記主面に、前記表面粗さRa1よりも大きい表面粗さRa2を有する領域を形成する、回路基板の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2019149319A JP7198178B2 (ja) | 2019-08-16 | 2019-08-16 | セラミックス基板、回路基板及びその製造方法、並びにパワーモジュール |
EP20854862.8A EP4015486B1 (en) | 2019-08-16 | 2020-08-05 | Ceramic substrate, circuit board and method for producing same, and power module |
KR1020227002844A KR20220047260A (ko) | 2019-08-16 | 2020-08-05 | 세라믹스 기판, 회로 기판 및 그 제조 방법, 그리고 파워 모듈 |
PCT/JP2020/030060 WO2021033553A1 (ja) | 2019-08-16 | 2020-08-05 | セラミックス基板、回路基板及びその製造方法、並びにパワーモジュール |
CN202080049815.2A CN114097075A (zh) | 2019-08-16 | 2020-08-05 | 陶瓷基板、电路基板及其制造方法、以及功率模块 |
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JP2008172172A (ja) * | 2007-01-15 | 2008-07-24 | Denso Corp | 電子制御装置及びその製造方法 |
JP2009239041A (ja) * | 2008-03-27 | 2009-10-15 | Tdk Corp | 高周波モジュール及びその製造方法 |
JP2011187511A (ja) * | 2010-03-04 | 2011-09-22 | Toshiba Corp | 窒化珪素基板およびそれを用いた半導体モジュール |
WO2018037842A1 (ja) * | 2016-08-22 | 2018-03-01 | 株式会社村田製作所 | セラミック基板及び電子部品内蔵モジュール |
JP2019052072A (ja) * | 2017-09-19 | 2019-04-04 | 株式会社Maruwa | 窒化ケイ素焼結体基板、電子装置、及び、窒化ケイ素焼結体基板の製造方法 |
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CN103222047B (zh) | 2010-11-22 | 2016-01-06 | 株式会社东芝 | 用于压力接触结构的陶瓷热沉材料、使用其的半导体模块和用于制造半导体模块的方法 |
JP2017123316A (ja) | 2016-01-08 | 2017-07-13 | 日本製紙株式会社 | 透明導電性フィルムの製造方法及びそれを用いたタッチパネル、ディスプレイ、太陽電池、照明 |
KR20180131072A (ko) * | 2017-05-31 | 2018-12-10 | 주식회사 코스텍시스 | 방열회로기판의 제조방법 |
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JP2008172172A (ja) * | 2007-01-15 | 2008-07-24 | Denso Corp | 電子制御装置及びその製造方法 |
JP2009239041A (ja) * | 2008-03-27 | 2009-10-15 | Tdk Corp | 高周波モジュール及びその製造方法 |
JP2011187511A (ja) * | 2010-03-04 | 2011-09-22 | Toshiba Corp | 窒化珪素基板およびそれを用いた半導体モジュール |
WO2018037842A1 (ja) * | 2016-08-22 | 2018-03-01 | 株式会社村田製作所 | セラミック基板及び電子部品内蔵モジュール |
JP2019052072A (ja) * | 2017-09-19 | 2019-04-04 | 株式会社Maruwa | 窒化ケイ素焼結体基板、電子装置、及び、窒化ケイ素焼結体基板の製造方法 |
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WO2024111484A1 (ja) * | 2022-11-25 | 2024-05-30 | デンカ株式会社 | 接合体及びパワーモジュール |
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EP4015486A1 (en) | 2022-06-22 |
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KR20220047260A (ko) | 2022-04-15 |
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