JP2021019007A - 電子部品 - Google Patents
電子部品 Download PDFInfo
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- JP2021019007A JP2021019007A JP2019131872A JP2019131872A JP2021019007A JP 2021019007 A JP2021019007 A JP 2021019007A JP 2019131872 A JP2019131872 A JP 2019131872A JP 2019131872 A JP2019131872 A JP 2019131872A JP 2021019007 A JP2021019007 A JP 2021019007A
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- 238000007747 plating Methods 0.000 claims abstract description 144
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 134
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 33
- 239000011593 sulfur Substances 0.000 claims abstract description 33
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 10
- 239000003985 ceramic capacitor Substances 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 40
- 125000004429 atom Chemical group 0.000 abstract description 14
- 230000006866 deterioration Effects 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 description 25
- 229910000679 solder Inorganic materials 0.000 description 23
- 150000001875 compounds Chemical class 0.000 description 18
- 239000000919 ceramic Substances 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 15
- 238000005259 measurement Methods 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 238000011156 evaluation Methods 0.000 description 10
- 238000009713 electroplating Methods 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 238000000005 dynamic secondary ion mass spectrometry Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 229910000480 nickel oxide Inorganic materials 0.000 description 4
- -1 rare earth compound Chemical class 0.000 description 4
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 125000004434 sulfur atom Chemical group 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
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- 238000006722 reduction reaction Methods 0.000 description 2
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 2
- 229940081974 saccharin Drugs 0.000 description 2
- 235000019204 saccharin Nutrition 0.000 description 2
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- TXHIDIHEXDFONW-UHFFFAOYSA-N benzene;propan-2-one Chemical compound CC(C)=O.C1=CC=CC=C1 TXHIDIHEXDFONW-UHFFFAOYSA-N 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- TVDSBUOJIPERQY-UHFFFAOYSA-N prop-2-yn-1-ol Chemical compound OCC#C TVDSBUOJIPERQY-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000003463 sulfur Chemical class 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
- H01G4/2325—Terminals electrically connecting two or more layers of a stacked or rolled capacitor characterised by the material of the terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/29—Terminals; Tapping arrangements for signal inductances
- H01F27/292—Surface mounted devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
- H01G4/0085—Fried electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/252—Terminals the terminals being coated on the capacitive element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/36—Accumulators not provided for in groups H01M10/05-H01M10/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/228—Terminals
- H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
図1は、本発明の実施形態1に係る電子部品の外観を示す斜視図である。図2は、図1の電子部品をII−II線矢印方向から見た断面図である。図3は、図1の電子部品をIII−III線矢印方向から見た断面図である。
内層部Cに含まれる誘電体層130および内部電極層140の各々の厚さは、以下のように測定する。まず、電子部品100を研磨し、長さ方向Lに直交する断面を露出させる。露出させた断面を走査型電子顕微鏡で観察する。次に、露出させた断面の中心を通過する積層方向Tに沿った中心線、およびこの中心線から両側に等間隔に2本ずつ引いた線の合計5本の線上における誘電体層130および内部電極層140の各々の厚さを測定する。誘電体層130の5つの測定値の平均値を、誘電体層130の厚さとする。内部電極層140の5つの測定値の平均値を、内部電極層140の厚さとする。
図4は、本発明の第1の実験例における比較例に係る電子部品において、外部電極の表面からの深さに対する、外部電極中の水素原子濃度の変化を測定した結果の一例を、模式的に示すグラフである。図5は、本発明の第1の実験例における実施例に係る電子部品において、外部電極の表面からの深さに対する、外部電極中の水素原子濃度の変化を測定した結果の一例を、模式的に示すグラフである。
外部電極120におけるS(硫黄)濃度は、上側めっき層124、下地電極層121、第2Niめっき層123、第1Niめっき層122の順に大きくなっている。
これにより、本実施形態における電子部品100は、下地電極層121中への水素原子の拡散が抑制されている。よって、積層セラミックコンデンサの本体部110に含まれるセラミックスが水素原子で還元されることを抑制できる。ひいては、水素原子によるセラミックスの還元によって積層セラミックコンデンサの絶縁抵抗が低下することを、抑制することができる。
以下、本発明の実施形態2に係る電子部品について説明する。本発明の実施形態2に係る電子部品は、外部電極が第2Niめっき層を含んでいない点で、本発明の実施形態1に係る電子部品100と異なる。よって、本発明の実施形態1に係る電子部品と同様である構成については説明を繰り返さない。
Claims (14)
- 本体部と、
前記本体部の表面に設けられた外部電極とを備え、
前記外部電極は、下地電極層と、該下地電極層上に形成された第1Ni(ニッケル)めっき層と、該第1Niめっき層の上方に形成された上側めっき層とを含み、
前記第1Niめっき層に含まれるS(硫黄)濃度は、5.2×1018atoms/cm3以上である、電子部品。 - 前記外部電極は、前記第1Niめっき層と前記上側めっき層との間に位置する第2Niめっき層をさらに含み、
前記第2Niめっき層に含まれるS(硫黄)濃度は、3.5×1018atoms/cm3以下である、請求項1に記載の電子部品。 - 前記外部電極は、前記第1Niめっき層と前記上側めっき層との間に位置する第2Niめっき層をさらに含み、
前記第1Niめっき層に含まれるS(硫黄)濃度は、前記第2Niめっき層に含まれるS(硫黄)濃度の1.5倍以上である、請求項1に記載の電子部品。 - 前記下地電極層は、金属を含む、請求項1に記載の電子部品。
- 前記下地電極層は、金属酸化物をさらに含む、請求項4に記載の電子部品。
- 前記下地電極層は、ガラスをさらに含む、請求項4に記載の電子部品。
- 前記下地電極層は、金属酸化物をさらに含む、請求項6に記載の電子部品。
- 前記下地電極層は、樹脂成分をさらに含む、請求項4に記載の電子部品。
- 前記下地電極層は、金属酸化物をさらに含む、請求項8に記載の電子部品。
- 前記下地電極層は、ガラスおよび樹脂成分をさらに含む、請求項4に記載の電子部品。
- 前記下地電極層は、金属酸化物をさらに含む、請求項10に記載の電子部品。
- 前記金属は、Cu(銅)、Ag(銀)、Au(金)、Ni(ニッケル)、Sn(スズ)、または、これらのいずれかを有する合金を含んでいる、請求項4に記載の電子部品。
- 前記外部電極は、前記第1Niめっき層と前記上側めっき層との間に位置する第2Niめっき層をさらに含み、
前記下地電極層における前記金属は、Cuを含み、
前記上側めっき層は、Sn(スズ)で構成されており、
前記外部電極におけるS(硫黄)濃度は、前記上側めっき層、前記下地電極層、前記第2Niめっき層、前記第1Niめっき層の順に大きくなっている、請求項12に記載の電子部品。 - 前記電子部品は、積層セラミックコンデンサである、請求項1に記載の電子部品。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019131872A JP7088134B2 (ja) | 2019-07-17 | 2019-07-17 | 電子部品 |
KR1020200081296A KR102366439B1 (ko) | 2019-07-17 | 2020-07-02 | 전자부품 |
US16/924,413 US11380485B2 (en) | 2019-07-17 | 2020-07-09 | Electronic component |
CN202010683571.5A CN112242253B (zh) | 2019-07-17 | 2020-07-15 | 电子部件 |
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JP2019131872A JP7088134B2 (ja) | 2019-07-17 | 2019-07-17 | 電子部品 |
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JP2021019007A true JP2021019007A (ja) | 2021-02-15 |
JP7088134B2 JP7088134B2 (ja) | 2022-06-21 |
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JPH07138782A (ja) * | 1993-11-18 | 1995-05-30 | Deitsupusoole Kk | Sn−Bi合金めっき浴及び該めっき浴を用いためっき方法 |
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JP2010093113A (ja) * | 2008-10-09 | 2010-04-22 | Murata Mfg Co Ltd | 積層型電子部品およびその製造方法 |
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JPH02301588A (ja) * | 1989-05-17 | 1990-12-13 | C Uyemura & Co Ltd | 錫,鉛,錫―鉛合金電気めっき浴及び電気めっき方法 |
JPH07138782A (ja) * | 1993-11-18 | 1995-05-30 | Deitsupusoole Kk | Sn−Bi合金めっき浴及び該めっき浴を用いためっき方法 |
JP2004107693A (ja) * | 2002-09-13 | 2004-04-08 | Murata Mfg Co Ltd | セラミック電子部品の製造方法 |
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