JP2020534695A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2020534695A5 JP2020534695A5 JP2020516384A JP2020516384A JP2020534695A5 JP 2020534695 A5 JP2020534695 A5 JP 2020534695A5 JP 2020516384 A JP2020516384 A JP 2020516384A JP 2020516384 A JP2020516384 A JP 2020516384A JP 2020534695 A5 JP2020534695 A5 JP 2020534695A5
- Authority
- JP
- Japan
- Prior art keywords
- metal
- copper
- barrier layer
- molybdenum
- microelectronic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims 36
- 229910052751 metal Inorganic materials 0.000 claims 29
- 239000002184 metal Substances 0.000 claims 29
- 238000004377 microelectronic Methods 0.000 claims 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 22
- 229910052802 copper Inorganic materials 0.000 claims 22
- 239000010949 copper Substances 0.000 claims 22
- 238000000034 method Methods 0.000 claims 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 21
- 229910000679 solder Inorganic materials 0.000 claims 18
- 239000002923 metal particle Substances 0.000 claims 16
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 15
- 229910052750 molybdenum Inorganic materials 0.000 claims 15
- 239000011733 molybdenum Substances 0.000 claims 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 13
- 229910052721 tungsten Inorganic materials 0.000 claims 13
- 239000010937 tungsten Substances 0.000 claims 13
- 238000007747 plating Methods 0.000 claims 12
- 239000010941 cobalt Substances 0.000 claims 10
- 229910017052 cobalt Inorganic materials 0.000 claims 10
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 10
- 229910052759 nickel Inorganic materials 0.000 claims 10
- 229910052684 Cerium Inorganic materials 0.000 claims 8
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 8
- 229910052746 lanthanum Inorganic materials 0.000 claims 8
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 8
- 238000009792 diffusion process Methods 0.000 claims 6
- 239000000945 filler Substances 0.000 claims 6
- 229910000765 intermetallic Inorganic materials 0.000 claims 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- WMOHXRDWCVHXGS-UHFFFAOYSA-N [La].[Ce] Chemical compound [La].[Ce] WMOHXRDWCVHXGS-UHFFFAOYSA-N 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000013528 metallic particle Substances 0.000 claims 1
- 238000001465 metallisation Methods 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201762561070P | 2017-09-20 | 2017-09-20 | |
| US62/561,070 | 2017-09-20 | ||
| US15/954,254 | 2018-04-16 | ||
| US15/954,254 US10424552B2 (en) | 2017-09-20 | 2018-04-16 | Alloy diffusion barrier layer |
| PCT/US2018/051874 WO2019060496A1 (en) | 2017-09-20 | 2018-09-20 | ALLOY DIFFUSION BARRIER LAYER |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020534695A JP2020534695A (ja) | 2020-11-26 |
| JP2020534695A5 true JP2020534695A5 (enExample) | 2021-11-04 |
| JP7185375B2 JP7185375B2 (ja) | 2022-12-07 |
Family
ID=65720677
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020516384A Active JP7185375B2 (ja) | 2017-09-20 | 2018-09-20 | 合金拡散障壁層 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US10424552B2 (enExample) |
| JP (1) | JP7185375B2 (enExample) |
| CN (1) | CN111052362B (enExample) |
| WO (1) | WO2019060496A1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7353794B2 (ja) * | 2019-05-13 | 2023-10-02 | ローム株式会社 | 半導体装置、その製造方法、及びモジュール |
| US11380613B2 (en) * | 2020-05-29 | 2022-07-05 | Qualcomm Incorporated | Repurposed seed layer for high frequency noise control and electrostatic discharge connection |
| US11753736B2 (en) | 2020-11-16 | 2023-09-12 | Raytheon Company | Indium electroplating on physical vapor deposition tantalum |
| US11862593B2 (en) * | 2021-05-07 | 2024-01-02 | Microsoft Technology Licensing, Llc | Electroplated indium bump stacks for cryogenic electronics |
| US20230091379A1 (en) * | 2021-09-22 | 2023-03-23 | Intel Corporation | First level interconnect under bump metallizations for fine pitch heterogeneous applications |
| JP7357824B1 (ja) * | 2022-12-16 | 2023-10-06 | 株式会社荏原製作所 | めっき装置およびめっき方法 |
| JP7579476B1 (ja) | 2024-02-21 | 2024-11-07 | 有限会社 ナプラ | 端子 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1139413B1 (en) * | 2000-03-24 | 2005-03-16 | Texas Instruments Incorporated | Wire bonding process |
| US20050085062A1 (en) * | 2003-10-15 | 2005-04-21 | Semitool, Inc. | Processes and tools for forming lead-free alloy solder precursors |
| US8148822B2 (en) | 2005-07-29 | 2012-04-03 | Megica Corporation | Bonding pad on IC substrate and method for making the same |
| JP2007250849A (ja) * | 2006-03-16 | 2007-09-27 | Casio Comput Co Ltd | 半導体装置の製造方法 |
| US8592995B2 (en) * | 2009-07-02 | 2013-11-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and structure for adhesion of intermetallic compound (IMC) on Cu pillar bump |
| JP4829340B2 (ja) * | 2009-12-25 | 2011-12-07 | 株式会社東芝 | 半導体装置の製造方法 |
| US9598772B2 (en) | 2010-04-16 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for fabricating bump structure without UBM undercut |
| US8922004B2 (en) | 2010-06-11 | 2014-12-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Copper bump structures having sidewall protection layers |
| US8232193B2 (en) | 2010-07-08 | 2012-07-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming Cu pillar capped by barrier layer |
| US8283781B2 (en) | 2010-09-10 | 2012-10-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having pad structure with stress buffer layer |
| US8664760B2 (en) | 2011-05-30 | 2014-03-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Connector design for packaging integrated circuits |
| US8698308B2 (en) | 2012-01-31 | 2014-04-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bump structural designs to minimize package defects |
| US9425136B2 (en) | 2012-04-17 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conical-shaped or tier-shaped pillar connections |
| US9831201B2 (en) | 2015-03-11 | 2017-11-28 | Guy F. Burgess | Methods for forming pillar bumps on semiconductor wafers |
| US9728521B2 (en) * | 2015-07-23 | 2017-08-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Hybrid bond using a copper alloy for yield improvement |
| JP6572673B2 (ja) * | 2015-08-13 | 2019-09-11 | 富士通株式会社 | 電子装置及び電子装置の製造方法 |
| US9748173B1 (en) * | 2016-07-06 | 2017-08-29 | International Business Machines Corporation | Hybrid interconnects and method of forming the same |
| US10431464B2 (en) * | 2016-10-17 | 2019-10-01 | International Business Machines Corporation | Liner planarization-free process flow for fabricating metallic interconnect structures |
-
2018
- 2018-04-16 US US15/954,254 patent/US10424552B2/en active Active
- 2018-09-20 CN CN201880056085.1A patent/CN111052362B/zh active Active
- 2018-09-20 WO PCT/US2018/051874 patent/WO2019060496A1/en not_active Ceased
- 2018-09-20 JP JP2020516384A patent/JP7185375B2/ja active Active
-
2019
- 2019-09-24 US US16/580,973 patent/US20200020656A1/en not_active Abandoned
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20210167034A1 (en) | Chip arrangements | |
| JP4195886B2 (ja) | 無鉛はんだを用い反応バリア層を有するフリップ・チップ用相互接続構造を形成するための方法 | |
| CN101944496B (zh) | 柱状结构及其形成方法、倒装芯片接合结构 | |
| US7547623B2 (en) | Methods of forming lead free solder bumps | |
| JP7185375B2 (ja) | 合金拡散障壁層 | |
| CN1254862C (zh) | 无铅焊料凸块及其制造方法 | |
| JP6287759B2 (ja) | 半導体装置とその製造方法 | |
| US11587858B2 (en) | Zinc-cobalt barrier for interface in solder bond applications | |
| WO2012053178A1 (ja) | 半導体接合構造体および半導体接合構造体の製造方法 | |
| US12023762B2 (en) | Layer structure with an intermetallic phase layer and a chip package that includes the layer structure | |
| CN115881673A (zh) | 层结构、芯片封装体以及它们的形成方法和焊料材料 | |
| TWI302722B (en) | Ubm pad, solder contact and methods for creating a solder joint | |
| JP2006100739A (ja) | 接合体、半導体装置、接合方法及び半導体装置の製造方法 | |
| TW201127541A (en) | Manufacturing method for lead-free solder material mixed with metal micro-particles | |
| CN101044609A (zh) | 形成无铅焊料凸块和相关结构的方法 | |
| CN112310027B (zh) | 将导体焊接到铝层 | |
| TWI272152B (en) | Doped alloys for electrical interconnects, methods of production and uses thereof | |
| JP6186802B2 (ja) | 電子デバイス用の接合構造及び電子デバイス | |
| JP4765099B2 (ja) | 半導体装置およびその製造方法 | |
| TWI236746B (en) | Circuit carrier and bonding pad thereof | |
| Karim et al. | Lead-free solder bump technologies for flip-chip packaging applications | |
| TW502424B (en) | Method of forming lead-free bump interconnections | |
| JP2002299381A (ja) | はんだめっきボールおよびそれを用いた半導体接続構造の製造方法 | |
| Yeoh et al. | Highly customizable RDL combined with UBM for various solder applications in wafer level packaging | |
| Dai et al. | Newly developed in-situ formation of SnAg and SnAgCu solder on copper pillar bump |