JP2020532487A - 支持ゼオライトフィルム、および製造するための方法 - Google Patents
支持ゼオライトフィルム、および製造するための方法 Download PDFInfo
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- JP2020532487A JP2020532487A JP2020533365A JP2020533365A JP2020532487A JP 2020532487 A JP2020532487 A JP 2020532487A JP 2020533365 A JP2020533365 A JP 2020533365A JP 2020533365 A JP2020533365 A JP 2020533365A JP 2020532487 A JP2020532487 A JP 2020532487A
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- Prior art keywords
- zeolite
- support
- porous support
- substrate
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010457 zeolite Substances 0.000 title claims abstract description 151
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 title claims abstract description 130
- 229910021536 Zeolite Inorganic materials 0.000 title claims abstract description 126
- 238000000034 method Methods 0.000 title claims abstract description 116
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000013078 crystal Substances 0.000 claims abstract description 142
- 239000012528 membrane Substances 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 230000002209 hydrophobic effect Effects 0.000 claims abstract description 58
- 239000000203 mixture Substances 0.000 claims abstract description 44
- 229920006317 cationic polymer Polymers 0.000 claims abstract description 37
- 238000000151 deposition Methods 0.000 claims abstract description 31
- 239000003054 catalyst Substances 0.000 claims abstract description 12
- 239000000243 solution Substances 0.000 claims description 96
- 239000000463 material Substances 0.000 claims description 62
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 44
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 44
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 44
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 34
- 239000003795 chemical substances by application Substances 0.000 claims description 22
- -1 hydrosilanes Chemical class 0.000 claims description 17
- 238000001354 calcination Methods 0.000 claims description 12
- 125000002091 cationic group Chemical group 0.000 claims description 12
- 239000002904 solvent Substances 0.000 claims description 12
- MLXDKRSDUJLNAB-UHFFFAOYSA-N triethoxy(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F MLXDKRSDUJLNAB-UHFFFAOYSA-N 0.000 claims description 11
- 238000012986 modification Methods 0.000 claims description 8
- 230000004048 modification Effects 0.000 claims description 8
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- 229910052665 sodalite Inorganic materials 0.000 claims description 5
- 150000001343 alkyl silanes Chemical class 0.000 claims description 4
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 239000005046 Chlorosilane Substances 0.000 claims description 3
- 150000001354 dialkyl silanes Chemical class 0.000 claims description 3
- 239000010419 fine particle Substances 0.000 claims description 2
- 229910052680 mordenite Inorganic materials 0.000 claims description 2
- VIFIHLXNOOCGLJ-UHFFFAOYSA-N trichloro(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl)silane Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CC[Si](Cl)(Cl)Cl VIFIHLXNOOCGLJ-UHFFFAOYSA-N 0.000 claims description 2
- BVQYIDJXNYHKRK-UHFFFAOYSA-N trimethoxy(3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F BVQYIDJXNYHKRK-UHFFFAOYSA-N 0.000 claims description 2
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 claims description 2
- 150000004756 silanes Chemical class 0.000 claims 3
- 150000001282 organosilanes Chemical class 0.000 claims 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 claims 1
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 claims 1
- OYOGCAUNFUJOMO-UHFFFAOYSA-N trimethyl(octyl)silane Chemical compound CCCCCCCC[Si](C)(C)C OYOGCAUNFUJOMO-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 17
- 238000010586 diagram Methods 0.000 abstract description 3
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- 239000011148 porous material Substances 0.000 description 68
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 50
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 41
- 239000006185 dispersion Substances 0.000 description 28
- 230000008021 deposition Effects 0.000 description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 230000035699 permeability Effects 0.000 description 21
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- 238000001035 drying Methods 0.000 description 17
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- 238000001878 scanning electron micrograph Methods 0.000 description 13
- 229910004298 SiO 2 Inorganic materials 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 12
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 12
- 239000012153 distilled water Substances 0.000 description 11
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- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 10
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- 238000011049 filling Methods 0.000 description 9
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- 239000000377 silicon dioxide Substances 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
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- 238000000576 coating method Methods 0.000 description 8
- 239000002808 molecular sieve Substances 0.000 description 8
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 8
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000004809 Teflon Substances 0.000 description 6
- 229920006362 Teflon® Polymers 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
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- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000004215 Carbon black (E152) Substances 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 5
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- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 4
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- QTRSWYWKHYAKEO-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-henicosafluorodecyl-tris(1,1,2,2,2-pentafluoroethoxy)silane Chemical compound FC(F)(F)C(F)(F)O[Si](OC(F)(F)C(F)(F)F)(OC(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F QTRSWYWKHYAKEO-UHFFFAOYSA-N 0.000 description 3
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- 238000010899 nucleation Methods 0.000 description 3
- BFFJWZAJLGOBMW-UHFFFAOYSA-M 1-adamantyl(trimethyl)azanium;fluoride Chemical compound [F-].C1C(C2)CC3CC2CC1([N+](C)(C)C)C3 BFFJWZAJLGOBMW-UHFFFAOYSA-M 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
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- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
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- VATLDQIKDYQXRX-UHFFFAOYSA-N 3,3,3-triethoxypropylsilane Chemical class CCOC(CC[SiH3])(OCC)OCC VATLDQIKDYQXRX-UHFFFAOYSA-N 0.000 description 1
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- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
- B01J20/02—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material
- B01J20/10—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising silica or silicate
- B01J20/16—Alumino-silicates
- B01J20/18—Synthetic zeolitic molecular sieves
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D63/00—Apparatus in general for separation processes using semi-permeable membranes
- B01D63/06—Tubular membrane modules
- B01D63/066—Tubular membrane modules with a porous block having membrane coated passages
-
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Abstract
Description
a) 基材または多孔質支持体を電荷改質する工程と
b) その後、電荷改質された基材または多孔質支持体を疎水性にする工程と
を含む、前記方法を提供する。
a) 基材または多孔質支持体を電荷改質する工程と、
b) 電荷改質された基材または多孔質支持体を疎水性にする工程と、
c) 電荷改質された疎水性基材または多孔質支持体上に、微粒子ゼオライトおよび/またはゼオライト様結晶を堆積させる工程と、
d) 前記堆積させられた微粒子ゼオライトおよび/またはゼオライト様結晶から、ゼオライトおよび/またはゼオライト様結晶を含む結晶性フィルムを成長させて、基材または多孔質支持体上に、ゼオライトおよび/またはゼオライト様結晶を含む結晶性フィルムを生成する工程と
を含む前記方法を提供する。
100nmの細孔の厚さ30μmの上部層、および3μmの細孔を有する厚さ3mmのベース層を備える多孔質α−アルミナ(直径25mm、厚さ3mm)の円板支持体を、空気中で、500℃で5時間か焼した。その後、支持体を、以下の2つの工程を伴う当技術分野で公知のマスキング手順(国際公開第00/53298号)で処理した;第1の工程は、100nmの細孔の上部面を、ポリ(メチルメタクリレート)の層でコーティングしたことを示唆し、第2の工程では、支持体の内部を、高温で溶けた炭化水素ワックスで満たした。炭化水素ワックスは冷却後に固まった。続いて、ポリ(メチルメタクリレート)を、アセトンに溶解し、表面を、0.1MのNH3水溶液ですすぎ、その後に、milliQ水の液滴(4μL)と、乾燥した円板支持体との間の接触角を、CCDカメラを備えたFibroDat 1121/1122システムで測定した。接触角は92°であった。この値は、炭化水素ワックスの測定した疎水性(接触角θ=107°)により影響を受けたと予想された。このことは、調査した表面が、疎水性部分(ワックス)および親水性部分(α−アルミナ)から成り、すなわち、表面は表面エネルギーの観点から見て不均質であることを示す。その後、支持体を、支持体表面の電荷を逆転させるために、1重量%のカチオン性ポリマー(75000の平均分子量を有するポリ(ジメチルアミン−co−エピクロロヒドリン−co−エチレンジアミン)、Aldrich)を含有するpH8に調節した水溶液で処理した。その後、支持体を、4つの異なる0.1Mのアンモニア水溶液中ですすぎ、層流ベンチで、12時間周囲温度で乾燥させた。
100nmの細孔の厚さ30μmの上部層、および3μmの細孔を有する厚さ3mmのベース層を備える多孔質α−アルミナ(直径25mm、厚さ3mm)の円板支持体を、空気中で、500℃で5時間か焼した。か焼した支持体を、最初に、溶媒としてのエタノール中の2.5重量%の1H,1H,2H,2H−パーフルオロデシルトリエトキシシランに浸漬した(国際公開第2014140291号)。浸漬時間は1時間であった。この期間後、支持体を、実施例1に記載される手順に従ってのエタノールですすぎ、オーブン中で、105℃で2時間乾燥させた。その後、疎水性支持体を、30分間、実施例1〜3において使用される1重量%のカチオン性ポリマーを含有するアンモニア水溶液(pH=8)中に浸漬させ、4つの異なる0.1Mのアンモニア水溶液中ですすいだ。オーブン中で2時間、105℃で乾燥させた後、CCDカメラを備えたFibroDat 1121/1122システムを使用して測定した。FibroDatソフトウェアによると、測定した接触角は、130°であった(図4a)。カチオン性ポリマーで処理する前の疎水性表面の接触角は、145°であり、これは、付着したカチオン性ポリマーが表面の疎水性を低下させたことを示す。続いて、支持体を、約50nmの平均直径を有するシリカライト−1結晶を含有する1重量%の水性分散液に浸漬した。支持体表面への結晶の堆積を、10分間進行させた。0.1Mのアンモニア水溶液ですすいだ後、支持体を空気中で、500℃で5時間か焼した。
以下の幾何学的配置を有する多孔質α−アルミナの管状支持体を、空気中で、500℃でか焼した;L=100mm、Douter=10mm、およびDinner=7mm。管は、100nmの細孔を有する厚さ30μmの内部層、および3μmの細孔を有する外部層を備えていた。か焼した支持体を、最初に、溶媒としてのエタノール中の2.5重量%の1H,1H,2H,2H−パーフルオロデシルトリエトキシシランに浸漬した。浸漬時間は1時間であった。この期間後に、エタノールを新しいエタノールと交換した後に、支持体を、エタノール(99.7%)に4回浸した。この手順を6回繰り返した。続いて、疎水性管状支持体を、オーブンで、105℃で2時間乾燥させ、その後、支持体を、1重量%のカチオン性ポリマー(75000の平均分子量を有するポリ(ジメチルアミン−co−エピクロロヒドリン−co−エチレンジアミン)、Aldrich)を含有する水溶液に浸漬した。ポリマー水溶液を、25重量%のアンモニア水溶液を使用してpH8に調節した。ポリマー水溶液中で30分後、支持体を、溶液を新鮮な溶液と交換した後に支持体をアンモニア水に4回浸すことにより、0.1Mのアンモニア水溶液ですすいだ。この手順を4回繰り返した。続いて、管状支持体を、約50nmの平均直径を有するシリカライト−1結晶を含有する重量%の水性分散液で処理した。支持体表面への結晶の堆積を、10分間進行させた。0.1Mのアンモニア水溶液ですすいだ後、支持体を、以下の組成を有する合成溶液に浸漬させ、油浴中で、88℃で71時間熱水処理した:25 SiO2:3 TPAOH:100 EtOH:1450 H2O。冷却後、薄いフィルムの複合異方性膜を、0.1Mのアンモニア水溶液ですすいで、緩く結合した結晶およびオリゴマーを膜の表面から除去した。膜の単一気体ヘリウム透過性は、か焼前に0.17まで測定され、このことが、膜中のピンホールのような欠陥の存在を証明する。理想的な膜は、ゼオライト細孔がテンプレート分子で遮断されるので、か焼前にゼロの透過性を有するであろう。膜の表面を、走査型電子顕微鏡により注意深く調査した。大部分の表面には欠陥が無いように見えたが、特定の位置ではフィルム中のピンホールを観察できる。膜中のピンホールの代表的な画像を、図5aに示す。ピンホールは、種層中の空の箇所の結果である(実施例4)。図5bは、実施例5に従って製造された膜のパームポロメトリー実験(上部掃引線)において、および本発明の実施例8に従って製造された膜(下部掃引線)のために測定された、ヘリウム透過性対n−ヘキサンの相対的蒸気圧のプロットを示す。当技術分野[Permporometry analysis of zeolite membranes、Journal of Membrane Science.345(2009)276頁]に記載されているように、パームポロメトリー実験における(p/p0)=1のn−ヘキサンの相対的蒸気圧で測定されるヘリウム透過性は、膜中のピンホールのような欠陥の量を示す。実施例5に従って製造される膜は、この相対的蒸気圧で、1.4の高いヘリウム透過性を有し(図5b、上部掃引線)、このことが、ピンホールのような欠陥の存在を示す。
実施例1に記載されているような多孔質α−アルミナ円板支持体を、アセトン、エタノール、および0.1Mのアンモニア水溶液で完全にすすいで、基材の表面に付着したほこりおよびあらゆる有機分子を除去した。その後、支持体を、以下の2つの工程を伴う当技術分野で公知のマスキング手順(国際公開第00/53298号)で処理した;第1の工程は、100nmの細孔の上部面を、ポリ(メチルメタクリレート)の薄層でコーティングしたことを意味し、第2の工程では、支持体の残りの部分を、炭化水素ワックスで満たした。続いて、ポリ(メチルメタクリレート)のすべてを、アセトンに溶解し、表面を、0.1MのNH3水溶液ですすぎ、その後に、支持体を、支持体表面の電荷を逆転させるために、1重量%のカチオン性ポリマー(75000の平均分子量を有するポリ(ジメチルアミン−co−エピクロロヒドリン−co−エチレンジアミン)、Aldrich)を含有するpH8に調節した(25重量%のNH3(水溶液)を使用する)水溶液で処理した。支持体を0.1Mのアンモニア水溶液ですすいだ後に、支持体表面の種付けを、1重量%のシリカライト−1分散体中に10分間浸漬することにより遂行した。種付け後、支持体を、0.1MのNH3水溶液で4回すすいで、過剰な種結晶を除去した。種付けした支持体を、以下の組成を有する合成溶液に浸漬させ、油浴中で、100℃で36時間熱水処理した:25 SiO2:3 TPAOH:100 EtOH:1500 H2O。冷却後、サンプルを、0.1MのNH3水溶液ですすいで、緩く結合された結晶およびオリゴマーを膜の表面から除去した。
Claims (23)
- ゼオライトおよび/またはゼオライト様結晶を含む結晶性フィルムを堆積させるための基材または多孔質支持体を生成するための方法であって:
a) 基材または多孔質支持体を電荷改質する工程と、
b) その後、電荷改質された基材または多孔質支持体を疎水性にする工程と
を含む前記方法。 - 基材または多孔質支持体上に、ゼオライトおよび/またはゼオライト様結晶を含む結晶性フィルムを生成するための方法であって:
a) 基材または多孔質支持体を電荷改質する工程と、
b) 電荷改質された基材または多孔質支持体を疎水性にする工程と、
c) 電荷改質された疎水性基材または多孔質支持体上に、微粒子ゼオライトおよび/またはゼオライト様結晶を堆積させる工程と、
d) 前記堆積させられた微粒子ゼオライトおよび/またはゼオライト様結晶から、ゼオライトおよび/またはゼオライト様結晶を含む結晶性フィルムを成長させて、基材または多孔質支持体上に、ゼオライトおよび/またはゼオライト様結晶を含む結晶性フィルムを生成する工程と
を含む前記方法。 - 基材または多孔質支持体は、支持体の電荷改質前に、溶媒、溶液、またはそれらの組成物を含浸させられる、請求項1または2に記載の方法。
- 1種またはそれ以上のカチオン性材料を使用して電荷改質を実行する、請求項1または2に記載の方法。
- 少なくとも1種のカチオン性材料は、1種またはそれ以上のカチオン性ポリマーである、請求項4に記載の方法。
- 基材または多孔質支持体は、カチオン性ポリマーの溶液に浸漬される、請求項5に記載の方法。
- 溶液は、アンモニア水溶液である、請求項6に記載の方法。
- カチオン性ポリマー(複数可)を含むアンモニア水溶液のpHは、pH8、pH8.5、またはpH9.5のような、7〜10のような、7〜12である、請求項7に記載の方法。
- 前記基材または多孔質支持体は、1種またはそれ以上のヒドロキサメート(複数可)、および/またはオルガノシラン、アルキルシラン、ハイドロシラン、ジアルキルシラン、フッ素化アルキルシラン、フッ素化ジアルキルシラン、パーフルオロ化アルキルシラン、フッ素化アルコキシシラン、クロロシラン、フッ素化クロロシラン、もしくはそれらの組合せのような1種もしくはそれ以上のシラン(複数可)を含む疎水剤(複数可)を使用して疎水性にされる、請求項1〜8のいずれか1項に記載の方法。
- 前記疎水剤(複数可)は、以下の化合物(複数可):オクチルヒドロキサメート、デシルヒドロキサメート、ドデシルヒドロキサメート、オクタデシルトリヒドロシラン、フェニルトリメトキシシラン、トリエトキシプロピルシラン、1H,1H,2H,2H−パーフルオロデシルトリエトキシシラン、1H,1H,2H,2H−パーフルオロデシルトリクロロシラン、トリメチルオクチルシラン、オクチルトリメトキシシラン、1H,1H,2H,2H−パーフルオロセチルメチルジクロロシラン、1H,1H,2H,2H−パーフルオロオクチルトリメトキシシラン、またはそれらの組合せのうちの1種またはそれ以上から選択される、請求項1〜8のいずれか1項に記載の方法。
- ゼオライト材料は、シリカライト−1、ゼオライトA、ゼオライトベータ、ゼオライトL、Y、X、ZSM−22、ZSM−11、ZSM−5、ZSM−2、LTA、SAPO−34、DDR、モルデナイト、キャバザイト、ホージャサイト、ソーダライト、フェリエライト、MFI、およびフィリップサイトを含む群から選択される、請求項1〜10のいずれか1項に記載の方法。
- 多孔質支持体は非対称であり、上部層は電荷改質される、請求項1〜11のいずれか1項に記載の方法。
- 基材または多孔質支持体の上部面は電荷改質される、請求項1〜12のいずれか1項に記載の方法。
- 工程(a)〜(c)の生成物は、方法の後続工程で、か焼することなく使用される、請求項1〜13のいずれか1項に記載の方法。
- 基材または多孔質支持体であって、請求項1の方法により得られる前記基材または多孔質支持体。
- 請求項1の方法により得られる基材または多孔質支持体の使用であって、本発明の結晶性フィルムを含む、物品の膜、触媒、センサー、吸着剤、および/または電極の製造における前記使用。
- 物品の膜、触媒、センサー、吸着剤、および/または電極であって、請求項1の方法により得られる基材または多孔質支持体を含む、前記物品の膜、触媒、センサー、吸着剤、および/または電極。
- 基材または多孔質支持体であって、堆積され電荷改質された材料の第1の層、および疎水剤の第2の層を備える基材または多孔質支持体材料を含む、前記基材または多孔質支持体。
- 基材または多孔質支持体上の結晶性フィルムであって、電荷改質材料の第1の堆積層、疎水剤(複数可)の堆積層、ならびにゼオライト種結晶から熱水成長された結晶ゼオライトフィルムを備える基材または多孔質支持体材料を含む前記結晶性フィルム。
- 結晶性フィルムであって、請求項2〜14のいずれか1項に記載の方法により得られるゼオライト結晶を含む前記結晶性フィルム。
- 請求項15に記載の基材または多孔質支持体上に支持される、請求項20に記載の結晶性フィルム。
- 物品の膜、触媒、センサー、吸着剤、および/または電極であって、請求項20の結晶性フィルムを含む、前記物品の膜、触媒、センサー、吸着剤、および/または電極。
- 複合異方性膜であって、請求項2〜14のいずれか1項に記載の方法により得られる、基材または多孔質支持体に堆積させられたゼオライトを含む結晶性フィルムを含む、前記複合異方性膜。
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EP3678761A1 (en) | 2020-07-15 |
US20200246775A1 (en) | 2020-08-06 |
GB201714269D0 (en) | 2017-10-18 |
JP7247193B2 (ja) | 2023-03-28 |
US11554359B2 (en) | 2023-01-17 |
CN111065447A (zh) | 2020-04-24 |
CN111065447B (zh) | 2022-10-21 |
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