JP2020520095A - 有機電子素子およびその製造方法 - Google Patents
有機電子素子およびその製造方法 Download PDFInfo
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- JP2020520095A JP2020520095A JP2019559747A JP2019559747A JP2020520095A JP 2020520095 A JP2020520095 A JP 2020520095A JP 2019559747 A JP2019559747 A JP 2019559747A JP 2019559747 A JP2019559747 A JP 2019559747A JP 2020520095 A JP2020520095 A JP 2020520095A
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- electronic device
- electrode
- organic electronic
- transport layer
- electron transport
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 63
- 239000002105 nanoparticle Substances 0.000 claims abstract description 57
- 125000003277 amino group Chemical group 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims description 28
- 239000000243 solution Substances 0.000 claims description 15
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- 230000005525 hole transport Effects 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000003786 synthesis reaction Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims description 4
- 125000002924 primary amino group Chemical class [H]N([H])* 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 claims description 2
- 229910000024 caesium carbonate Inorganic materials 0.000 claims description 2
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- 239000007787 solid Substances 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
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- 239000010409 thin film Substances 0.000 description 8
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
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- 125000001424 substituent group Chemical group 0.000 description 5
- 238000001308 synthesis method Methods 0.000 description 5
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- 229920000144 PEDOT:PSS Polymers 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
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- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 4
- 239000011112 polyethylene naphthalate Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910000480 nickel oxide Inorganic materials 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- KJHGHQMIPHPKIY-UHFFFAOYSA-N 2-[[5-[4-[4-[5-(2,2-dicyanoethenyl)thiophen-2-yl]-n-[4-[5-(2,2-dicyanoethenyl)thiophen-2-yl]phenyl]anilino]phenyl]thiophen-2-yl]methylidene]propanedinitrile Chemical compound S1C(C=C(C#N)C#N)=CC=C1C1=CC=C(N(C=2C=CC(=CC=2)C=2SC(C=C(C#N)C#N)=CC=2)C=2C=CC(=CC=2)C=2SC(C=C(C#N)C#N)=CC=2)C=C1 KJHGHQMIPHPKIY-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 2
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- 125000003342 alkenyl group Chemical group 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 125000003282 alkyl amino group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000003368 amide group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 150000003974 aralkylamines Chemical group 0.000 description 2
- 125000005264 aryl amine group Chemical group 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
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- 239000010949 copper Substances 0.000 description 2
- VVOLVFOSOPJKED-UHFFFAOYSA-N copper phthalocyanine Chemical group [Cu].N=1C2=NC(C3=CC=CC=C33)=NC3=NC(C3=CC=CC=C33)=NC3=NC(C3=CC=CC=C33)=NC3=NC=1C1=CC=CC=C12 VVOLVFOSOPJKED-UHFFFAOYSA-N 0.000 description 2
- 125000000753 cycloalkyl group Chemical group 0.000 description 2
- 229910052805 deuterium Inorganic materials 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000002296 dynamic light scattering Methods 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 125000005241 heteroarylamino group Chemical group 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 125000005462 imide group Chemical group 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910003473 lithium bis(trifluoromethanesulfonyl)imide Inorganic materials 0.000 description 2
- QSZMZKBZAYQGRS-UHFFFAOYSA-N lithium;bis(trifluoromethylsulfonyl)azanide Chemical compound [Li+].FC(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(F)(F)F QSZMZKBZAYQGRS-UHFFFAOYSA-N 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 125000002560 nitrile group Chemical group 0.000 description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
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- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 150000003335 secondary amines Chemical class 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 125000004434 sulfur atom Chemical group 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
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- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- MKDLYSABBHXXSV-UHFFFAOYSA-N 1-iodo-4-(4-propylphenyl)benzene Chemical compound C1=CC(CCC)=CC=C1C1=CC=C(I)C=C1 MKDLYSABBHXXSV-UHFFFAOYSA-N 0.000 description 1
- ADSOSINJPNKUJK-UHFFFAOYSA-N 2-butylpyridine Chemical group CCCCC1=CC=CC=N1 ADSOSINJPNKUJK-UHFFFAOYSA-N 0.000 description 1
- IHXWECHPYNPJRR-UHFFFAOYSA-N 3-hydroxycyclobut-2-en-1-one Chemical compound OC1=CC(=O)C1 IHXWECHPYNPJRR-UHFFFAOYSA-N 0.000 description 1
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- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GKEVOZHNIUTVSB-UHFFFAOYSA-N C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21.C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21.C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 GKEVOZHNIUTVSB-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- VXFKJJQMYOOTLQ-UHFFFAOYSA-N acetylene prop-2-enenitrile Chemical group C#C.C(C=C)#N VXFKJJQMYOOTLQ-UHFFFAOYSA-N 0.000 description 1
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- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
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- 229910052731 fluorine Inorganic materials 0.000 description 1
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- 238000007756 gravure coating Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
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- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- IKXKTLBKRBLWNN-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21.C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 IKXKTLBKRBLWNN-UHFFFAOYSA-N 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
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- 238000001556 precipitation Methods 0.000 description 1
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- 239000010453 quartz Substances 0.000 description 1
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- 238000011160 research Methods 0.000 description 1
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- 230000000630 rising effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 210000002700 urine Anatomy 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
- H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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Abstract
Description
10nm〜30nmの直径の酸化亜鉛(ZnO)ナノ粒子をアミン基と結合させて1以上のアミン基が表面に結合した酸化亜鉛(ZnO)ナノ粒子を作製して、1−ブタノール溶媒に2.5wt%の含有量で分散させて電子輸送層溶液を製造した。
前記実施例1の製造方法のうち、広い面積の有機電子素子を作製し、広い面積の複数の有機電子素子を直列連結して、光活性面積が6.40cm2の有機電子素子モジュールを作製したことを除けば、実施例1と同様の方法で有機電子素子を製造した。
前記実施例2の製造方法のうち、電子供与物質としてP3HTの代わりにPTB7を用いたことを除けば、実施例2と同様の方法で有機電子素子を製造した。
前記実施例1において、酸化亜鉛(ZnO)ナノ粒子を1−ブタノール溶媒に分散させた電子輸送層溶液で電子輸送層を製造したことを除けば、実施例1と同様の方法で有機電子素子を作製した。
前記実施例2において、酸化亜鉛(ZnO)ナノ粒子を1−ブタノール溶媒に分散させた電子輸送層溶液で電子輸送層を製造したことを除けば、実施例2と同様の方法で有機電子素子を作製した。
前記実施例3において、酸化亜鉛(ZnO)ナノ粒子を1−ブタノール溶媒に分散させた電子輸送層溶液で電子輸送層を製造したことを除けば、実施例3と同様の方法で有機電子素子を作製した。
Claims (16)
- 第1電極と、
前記第1電極に対向して備えられる第2電極と、
前記第1電極と前記第2電極との間に備えられる光活性層と、
前記光活性層と前記第1電極との間に備えられる電子輸送層とを含み、
前記電子輸送層は、1以上のアミン基が表面に結合した酸化亜鉛(ZnO)ナノ粒子を含むものである有機電子素子。 - 前記光活性層と前記第2電極との間に正孔輸送層をさらに含むものである、請求項1に記載の有機電子素子。
- 前記1以上のアミン基が表面に結合した酸化亜鉛(ZnO)ナノ粒子の電子輸送層に対する含有量は、0.5wt%以上10wt%以下である、請求項1または2に記載の有機電子素子。
- 前記酸化亜鉛(ZnO)ナノ粒子の直径は、10nm以上50nm以下である、請求項1から3のいずれか一項に記載の有機電子素子。
- 前記光活性層は、電子供与物質および電子受容物質を含むものである、請求項1から4のいずれか一項に記載の有機電子素子。
- 前記電子輸送層は、導電性酸化物および金属からなる群より選択される1または2以上をさらに含むものである、請求項1から5のいずれか一項に記載の有機電子素子。
- 前記電子輸送層は、チタン酸化物;亜鉛酸化物;およびセシウムカーボネートからなる群より選択される1または2以上をさらに含むものである、請求項1から6のいずれか一項に記載の有機電子素子。
- 前記電子輸送層の厚さは、10nm以上100nm以下である、請求項1から7のいずれか一項に記載の有機電子素子。
- 前記アミン基は、一級アミン(primary amine)である、請求項1から8のいずれか一項に記載の有機電子素子。
- 前記有機電子素子は、正孔注入層、正孔輸送層、正孔ブロック層、電荷発生層、電子ブロック層、電子注入層、および電子輸送層からなる群より選択される1または2以上の有機物層をさらに含むものである、請求項1から9のいずれか一項に記載の有機電子素子。
- 基板を用意するステップと、
前記基板上に第1電極を形成するステップと、
前記第1電極上に電子輸送層を形成するステップと、
前記電子輸送層上に光活性層を形成するステップと、
前記光活性層上に第2電極を形成するステップとを含み、
前記電子輸送層は、1以上のアミン基が表面に結合した酸化亜鉛(ZnO)ナノ粒子を含むものである有機電子素子の製造方法。 - 基板を用意するステップと、
前記基板上に第2電極を形成するステップと、
前記第2電極上に光活性層を形成するステップと、
前記光活性層上に電子輸送層を形成するステップと、
前記電子輸送層上に第1電極を形成するステップとを含み、
前記電子輸送層は、1以上のアミン基が表面に結合した酸化亜鉛(ZnO)ナノ粒子を含むものである有機電子素子の製造方法。 - 前記光活性層を形成するステップと前記第2電極を形成するステップとの間に、正孔輸送層を形成するステップをさらに含むものである、請求項11または12に記載の有機電子素子の製造方法。
- 前記1以上のアミン基が表面に結合した酸化亜鉛(ZnO)ナノ粒子の形成は、
前記酸化亜鉛(ZnO)ナノ粒子を用意した後、表面にアミン基を付着させるか、または前記酸化亜鉛(ZnO)ナノ粒子を合成すると同時にアミン基の原材料を入れて形成するものである、請求項11から13のいずれか一項に記載の有機電子素子の製造方法。 - 前記酸化亜鉛(ZnO)ナノ粒子の合成は、気体合成、固体合成、または溶液合成によるものである、請求項11から14のいずれか一項に記載の有機電子素子の製造方法。
- 前記電子輸送層を形成するステップは、バーコーターコーティングである、請求項11から15のいずれか一項に記載の有機電子素子の製造方法。
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