WO2019039907A3 - 유기전자소자 및 이의 제조 방법 - Google Patents

유기전자소자 및 이의 제조 방법 Download PDF

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Publication number
WO2019039907A3
WO2019039907A3 PCT/KR2018/009798 KR2018009798W WO2019039907A3 WO 2019039907 A3 WO2019039907 A3 WO 2019039907A3 KR 2018009798 W KR2018009798 W KR 2018009798W WO 2019039907 A3 WO2019039907 A3 WO 2019039907A3
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WO
WIPO (PCT)
Prior art keywords
electrode
manufacturing
electronic device
organic electronic
electron transport
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PCT/KR2018/009798
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English (en)
French (fr)
Other versions
WO2019039907A2 (ko
Inventor
김연신
장송림
최두환
박정하
유승준
Original Assignee
주식회사 엘지화학
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Publication date
Application filed by 주식회사 엘지화학 filed Critical 주식회사 엘지화학
Priority to CN201880028317.2A priority Critical patent/CN110622333B/zh
Priority to JP2019559747A priority patent/JP6862649B2/ja
Priority to US16/608,878 priority patent/US11393996B2/en
Publication of WO2019039907A2 publication Critical patent/WO2019039907A2/ko
Publication of WO2019039907A3 publication Critical patent/WO2019039907A3/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L2031/0344—Organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 출원은 제1 전극; 상기 제1 전극과 대향하여 구비되는 제2 전극; 상기 제1 전극과 상기 제2 전극 사이에 구비되는 광활성층; 및 상기 광활성층과 상기 제1 전극 사이에 구비되는 전자수송층을 포함하고, 상기 전자수송층은 1 이상의 아민기가 표면에 결합된 산화아연(ZnO) 나노 입자를 포함하는 것인 유기전자소자 및 이의 제조 방법에 관한 것이다.
PCT/KR2018/009798 2017-08-24 2018-08-24 유기전자소자 및 이의 제조 방법 WO2019039907A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201880028317.2A CN110622333B (zh) 2017-08-24 2018-08-24 有机电子器件及其制造方法
JP2019559747A JP6862649B2 (ja) 2017-08-24 2018-08-24 有機電子素子およびその製造方法
US16/608,878 US11393996B2 (en) 2017-08-24 2018-08-24 Organic electronic device and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2017-0107435 2017-08-24
KR1020170107435A KR102107882B1 (ko) 2017-08-24 2017-08-24 유기전자소자 및 이의 제조 방법

Publications (2)

Publication Number Publication Date
WO2019039907A2 WO2019039907A2 (ko) 2019-02-28
WO2019039907A3 true WO2019039907A3 (ko) 2019-04-25

Family

ID=65440151

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2018/009798 WO2019039907A2 (ko) 2017-08-24 2018-08-24 유기전자소자 및 이의 제조 방법

Country Status (5)

Country Link
US (1) US11393996B2 (ko)
JP (1) JP6862649B2 (ko)
KR (1) KR102107882B1 (ko)
CN (1) CN110622333B (ko)
WO (1) WO2019039907A2 (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6925201B2 (ja) * 2017-08-28 2021-08-25 日本放送協会 有機エレクトロルミネッセンス素子およびその製造方法、表示装置、照明装置
KR102405616B1 (ko) * 2020-09-01 2022-06-08 (주) 에이슨 유연 경피성 산소 분압센서
CN113054114B (zh) * 2021-03-15 2022-03-18 吉林大学 基于D-A型有机小分子掺杂ZnO电子传输层的太阳能电池及其制备方法

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WO2012154557A2 (en) * 2011-05-09 2012-11-15 Konarka Technologies, Inc. Tandem photovoltaic cells
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WO2012154557A2 (en) * 2011-05-09 2012-11-15 Konarka Technologies, Inc. Tandem photovoltaic cells
KR20130133571A (ko) * 2012-05-29 2013-12-09 광주과학기술원 아민기를 갖는 비공액 고분자를 포함하는 유기전자소자용 기능층 및 이를 포함하는 유기전자소자
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KR20160067340A (ko) * 2014-12-04 2016-06-14 주식회사 엘지화학 유기 태양 전지 및 이의 제조방법

Also Published As

Publication number Publication date
WO2019039907A2 (ko) 2019-02-28
US20200091450A1 (en) 2020-03-19
KR102107882B1 (ko) 2020-05-07
KR20190021946A (ko) 2019-03-06
CN110622333B (zh) 2022-10-28
JP2020520095A (ja) 2020-07-02
JP6862649B2 (ja) 2021-04-21
US11393996B2 (en) 2022-07-19
CN110622333A (zh) 2019-12-27

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