JP2020519011A5 - - Google Patents

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JP2020519011A5
JP2020519011A5 JP2019558402A JP2019558402A JP2020519011A5 JP 2020519011 A5 JP2020519011 A5 JP 2020519011A5 JP 2019558402 A JP2019558402 A JP 2019558402A JP 2019558402 A JP2019558402 A JP 2019558402A JP 2020519011 A5 JP2020519011 A5 JP 2020519011A5
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Japan
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electro
optical device
silicon
stack
layer
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JP2019558402A
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Japanese (ja)
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JP2020519011A (ja
JP7076470B2 (ja
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Priority claimed from US15/587,754 external-priority patent/US10283931B2/en
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JP2019558402A 2017-05-05 2018-05-02 Iii-v族利得材料および集積化ヒート・シンクを有する電子-光学装置ならびにその製造方法 Active JP7076470B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15/587,754 2017-05-05
US15/587,754 US10283931B2 (en) 2017-05-05 2017-05-05 Electro-optical device with III-V gain materials and integrated heat sink
US15/804,716 2017-11-06
US15/804,716 US10256603B2 (en) 2017-05-05 2017-11-06 Electro-optical device with III-V gain materials and integrated heat sink
PCT/IB2018/053033 WO2018203246A1 (en) 2017-05-05 2018-05-02 Electro-optical device with iii- v gain materials and integrated heat sink

Publications (3)

Publication Number Publication Date
JP2020519011A JP2020519011A (ja) 2020-06-25
JP2020519011A5 true JP2020519011A5 (https=) 2020-08-06
JP7076470B2 JP7076470B2 (ja) 2022-05-27

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JP2019558402A Active JP7076470B2 (ja) 2017-05-05 2018-05-02 Iii-v族利得材料および集積化ヒート・シンクを有する電子-光学装置ならびにその製造方法

Country Status (6)

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US (2) US10283931B2 (https=)
JP (1) JP7076470B2 (https=)
CN (1) CN110574176A (https=)
DE (1) DE112018000883B4 (https=)
GB (1) GB2576844B (https=)
WO (1) WO2018203246A1 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9515002B2 (en) * 2015-02-09 2016-12-06 Micron Technology, Inc. Bonding pads with thermal pathways
JP6869830B2 (ja) * 2017-06-29 2021-05-12 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10594111B2 (en) 2017-08-31 2020-03-17 International Business Machines Corporation Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals
DE102018214574A1 (de) * 2018-08-29 2020-03-05 Robert Bosch Gmbh Integriert-optische Vorrichtung
US11081856B2 (en) * 2018-12-27 2021-08-03 Cisco Technology, Inc. III-V laser platforms on silicon with through silicon vias by wafer scale bonding
JP7139952B2 (ja) * 2019-01-08 2022-09-21 日本電信電話株式会社 半導体光素子
CN113491007A (zh) * 2019-03-11 2021-10-08 Hrl实验室有限责任公司 在金属嵌入式芯片组件(meca)处理期间保护晶粒的方法
US10985084B2 (en) * 2019-07-03 2021-04-20 Globalfoundries U.S. Inc. Integrated III-V device and driver device packages with improved heat removal and methods for fabricating the same
US20230139692A1 (en) * 2020-03-30 2023-05-04 Nippon Telegraph And Telephone Corporation Semiconductor Optical Device
FR3109020B1 (fr) * 2020-04-06 2022-02-25 Scintil Photonics Dispositif photonique pour etablir un rayonnement lumineux comprenant un mode optique dans un guide d'onde
FR3115412B1 (fr) * 2020-10-16 2023-01-06 Scintil Photonics Dispositif photonique avec dissipation thermique amelioree pour laser heterogene iii-v/si et procede de fabrication associe
WO2022113153A1 (ja) * 2020-11-24 2022-06-02 日本電信電話株式会社 半導体光素子
CN112769031B (zh) * 2020-12-31 2023-05-16 联合微电子中心有限责任公司 一种背向集成有源器件及其制备方法
US20240055829A1 (en) * 2021-01-18 2024-02-15 Nippon Telegraph And Telephone Corporation Semiconductor Laser and Design Method Therefor
CN115036785B (zh) * 2021-03-05 2025-02-25 联合微电子中心有限责任公司 基于背向集成的空气绝热层的制备方法及半导体器件
CN113113838B (zh) * 2021-03-22 2022-12-23 武汉华工正源光子技术有限公司 集成激光器件及其制备方法
TWI763420B (zh) * 2021-04-09 2022-05-01 友達光電股份有限公司 顯示面板
EP4102272B1 (en) 2021-06-08 2025-02-19 IHP GmbH - Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik Integrated optoelectronic device with optical interconnect structure for improved beol device integration
KR102824593B1 (ko) 2021-10-06 2025-06-24 삼성전자주식회사 광 변조 소자 및 이를 포함한 장치
US11934021B2 (en) * 2022-01-27 2024-03-19 Globalfoundries U.S. Inc. Photonic devices integrated with thermally conductive layers
US11846804B2 (en) * 2022-02-24 2023-12-19 Globalfoundries U.S. Inc. Thermally-conductive features positioned adjacent to an optical component
US11822120B2 (en) * 2022-02-24 2023-11-21 Globalfoundries U.S. Inc. Optical components with enhanced heat dissipation
US20230275399A1 (en) * 2022-02-28 2023-08-31 Sumitomo Electric Industries, Ltd. Semiconductor optical device and method of manufacturing the same
FR3136317B1 (fr) 2022-06-01 2025-07-11 Commissariat Energie Atomique Procédé de fabrication d’une puce photonique
CN114864753B (zh) * 2022-07-05 2022-11-04 杭州视光半导体科技有限公司 一种三层堆叠结构晶圆的制备方法及应用
US20230019747A1 (en) * 2022-09-23 2023-01-19 Richard Jones Hybrid laser architecture with asymmetric metal shunt
JPWO2025013241A1 (https=) * 2023-07-12 2025-01-16
DE102024130762A1 (de) * 2024-10-22 2026-04-23 Aixtron Se Verfahren zur Herstellung einer mit einer Wärmeableitschicht verbundenen CMOS-Struktur

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007173402A (ja) * 2005-12-20 2007-07-05 Matsushita Electric Ind Co Ltd 半導体レーザ装置
US7639719B2 (en) * 2007-12-31 2009-12-29 Intel Corporation Thermal shunt for active devices on silicon-on-insulator wafers
US11181688B2 (en) * 2009-10-13 2021-11-23 Skorpios Technologies, Inc. Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
US9316785B2 (en) 2013-10-09 2016-04-19 Skorpios Technologies, Inc. Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
US9923105B2 (en) * 2013-10-09 2018-03-20 Skorpios Technologies, Inc. Processing of a direct-bandgap chip after bonding to a silicon photonic device
EP2539979B1 (en) 2010-02-24 2018-05-23 Universiteit Gent Laser light coupling into SOI CMOS photonic integrated circuit
US8290014B2 (en) 2010-03-11 2012-10-16 Junesand Carl Active photonic device
FR2967831B1 (fr) 2010-11-18 2013-07-19 Commissariat Energie Atomique Laser heterogene a efficacite elevee et procede de fabrication du laser
US9442247B2 (en) 2011-11-02 2016-09-13 University Of Central Florida Research Foundation, Inc. Branched shape optical isolator and optical apparatus, method and applications
JP5918611B2 (ja) * 2012-04-17 2016-05-18 日本電信電話株式会社 光半導体素子
US9360620B2 (en) * 2012-08-29 2016-06-07 Aurrion, Inc. Thermal management for photonic integrated circuits
CN102904159B (zh) 2012-10-26 2015-03-18 江苏尚飞光电科技有限公司 一种基于bcb键合工艺的混合集成激光器及其制作方法
US20170214214A1 (en) * 2013-04-25 2017-07-27 The Board Of Regents Of The University Of Oklahoma Hybrid semiconductor laser absent a top semiconductor cladding layer
EP2866316A1 (en) 2013-10-23 2015-04-29 Alcatel Lucent Thermal management of a ridge-type hybrid laser, device, and method
JP6021118B2 (ja) * 2014-03-27 2016-11-02 インターナショナル・ビジネス・マシーンズ・コーポレーションInternational Business Machines Corporation 光デバイスおよびその製造方法
KR102171268B1 (ko) * 2014-09-30 2020-11-06 삼성전자 주식회사 하이브리드 실리콘 레이저 제조 방법
US9397471B2 (en) 2014-11-14 2016-07-19 Intel Corporation Heat removal from photonic devices
WO2016145310A1 (en) 2015-03-12 2016-09-15 Samtec, Inc. Optical module including silicon photonics chip and coupler chip
US9583607B2 (en) 2015-07-17 2017-02-28 Mitsubishi Electric Research Laboratories, Inc. Semiconductor device with multiple-functional barrier layer

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