CN110574176A - 具有iii–v族增益材料和集成散热器的电光器件 - Google Patents

具有iii–v族增益材料和集成散热器的电光器件 Download PDF

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Publication number
CN110574176A
CN110574176A CN201880028675.3A CN201880028675A CN110574176A CN 110574176 A CN110574176 A CN 110574176A CN 201880028675 A CN201880028675 A CN 201880028675A CN 110574176 A CN110574176 A CN 110574176A
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China
Prior art keywords
heat sink
electro
stack
optic device
silicon
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CN201880028675.3A
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Chinese (zh)
Inventor
C·卡尔
H·哈恩
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • H01S3/2375—Hybrid lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H01S5/02484—Sapphire or diamond heat spreaders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
CN201880028675.3A 2017-05-05 2018-05-02 具有iii–v族增益材料和集成散热器的电光器件 Pending CN110574176A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15/587,754 2017-05-05
US15/587,754 US10283931B2 (en) 2017-05-05 2017-05-05 Electro-optical device with III-V gain materials and integrated heat sink
US15/804,716 2017-11-06
US15/804,716 US10256603B2 (en) 2017-05-05 2017-11-06 Electro-optical device with III-V gain materials and integrated heat sink
PCT/IB2018/053033 WO2018203246A1 (en) 2017-05-05 2018-05-02 Electro-optical device with iii- v gain materials and integrated heat sink

Publications (1)

Publication Number Publication Date
CN110574176A true CN110574176A (zh) 2019-12-13

Family

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Family Applications (1)

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CN201880028675.3A Pending CN110574176A (zh) 2017-05-05 2018-05-02 具有iii–v族增益材料和集成散热器的电光器件

Country Status (6)

Country Link
US (2) US10283931B2 (https=)
JP (1) JP7076470B2 (https=)
CN (1) CN110574176A (https=)
DE (1) DE112018000883B4 (https=)
GB (1) GB2576844B (https=)
WO (1) WO2018203246A1 (https=)

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CN112769031A (zh) * 2020-12-31 2021-05-07 联合微电子中心有限责任公司 一种背向集成有源器件及其制备方法
CN113113838A (zh) * 2021-03-22 2021-07-13 武汉华工正源光子技术有限公司 集成激光器件及其制备方法
CN114864753A (zh) * 2022-07-05 2022-08-05 杭州视光半导体科技有限公司 一种三层堆叠结构晶圆的制备方法及应用
CN115036785A (zh) * 2021-03-05 2022-09-09 联合微电子中心有限责任公司 基于背向集成的空气绝热层的制备方法及半导体器件
CN116643335A (zh) * 2022-02-24 2023-08-25 格芯(美国)集成电路科技有限公司 邻近光学部件定位的导热特征

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US10594111B2 (en) 2017-08-31 2020-03-17 International Business Machines Corporation Lateral current injection electro-optical device with well-separated doped III-V layers structured as photonic crystals
DE102018214574A1 (de) * 2018-08-29 2020-03-05 Robert Bosch Gmbh Integriert-optische Vorrichtung
US11081856B2 (en) * 2018-12-27 2021-08-03 Cisco Technology, Inc. III-V laser platforms on silicon with through silicon vias by wafer scale bonding
JP7139952B2 (ja) * 2019-01-08 2022-09-21 日本電信電話株式会社 半導体光素子
CN113491007A (zh) * 2019-03-11 2021-10-08 Hrl实验室有限责任公司 在金属嵌入式芯片组件(meca)处理期间保护晶粒的方法
US10985084B2 (en) * 2019-07-03 2021-04-20 Globalfoundries U.S. Inc. Integrated III-V device and driver device packages with improved heat removal and methods for fabricating the same
US20230139692A1 (en) * 2020-03-30 2023-05-04 Nippon Telegraph And Telephone Corporation Semiconductor Optical Device
FR3109020B1 (fr) * 2020-04-06 2022-02-25 Scintil Photonics Dispositif photonique pour etablir un rayonnement lumineux comprenant un mode optique dans un guide d'onde
FR3115412B1 (fr) * 2020-10-16 2023-01-06 Scintil Photonics Dispositif photonique avec dissipation thermique amelioree pour laser heterogene iii-v/si et procede de fabrication associe
WO2022113153A1 (ja) * 2020-11-24 2022-06-02 日本電信電話株式会社 半導体光素子
US20240055829A1 (en) * 2021-01-18 2024-02-15 Nippon Telegraph And Telephone Corporation Semiconductor Laser and Design Method Therefor
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EP4102272B1 (en) 2021-06-08 2025-02-19 IHP GmbH - Innovations for High Performance Microelectronics / Leibniz-Institut für innovative Mikroelektronik Integrated optoelectronic device with optical interconnect structure for improved beol device integration
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US11934021B2 (en) * 2022-01-27 2024-03-19 Globalfoundries U.S. Inc. Photonic devices integrated with thermally conductive layers
US11822120B2 (en) * 2022-02-24 2023-11-21 Globalfoundries U.S. Inc. Optical components with enhanced heat dissipation
US20230275399A1 (en) * 2022-02-28 2023-08-31 Sumitomo Electric Industries, Ltd. Semiconductor optical device and method of manufacturing the same
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US20230019747A1 (en) * 2022-09-23 2023-01-19 Richard Jones Hybrid laser architecture with asymmetric metal shunt
JPWO2025013241A1 (https=) * 2023-07-12 2025-01-16
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112769031A (zh) * 2020-12-31 2021-05-07 联合微电子中心有限责任公司 一种背向集成有源器件及其制备方法
CN115036785A (zh) * 2021-03-05 2022-09-09 联合微电子中心有限责任公司 基于背向集成的空气绝热层的制备方法及半导体器件
CN113113838A (zh) * 2021-03-22 2021-07-13 武汉华工正源光子技术有限公司 集成激光器件及其制备方法
CN113113838B (zh) * 2021-03-22 2022-12-23 武汉华工正源光子技术有限公司 集成激光器件及其制备方法
CN116643335A (zh) * 2022-02-24 2023-08-25 格芯(美国)集成电路科技有限公司 邻近光学部件定位的导热特征
CN114864753A (zh) * 2022-07-05 2022-08-05 杭州视光半导体科技有限公司 一种三层堆叠结构晶圆的制备方法及应用
WO2024007586A1 (zh) * 2022-07-05 2024-01-11 杭州视光半导体科技有限公司 一种三层堆叠结构晶圆的制备方法及应用

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US20180323575A1 (en) 2018-11-08
US10256603B2 (en) 2019-04-09
JP2020519011A (ja) 2020-06-25
DE112018000883T5 (de) 2019-10-31
GB2576844B (en) 2022-03-16
DE112018000883B4 (de) 2022-01-05
GB201916874D0 (en) 2020-01-01
US10283931B2 (en) 2019-05-07
WO2018203246A1 (en) 2018-11-08
GB2576844A (en) 2020-03-04
US20180323574A1 (en) 2018-11-08
JP7076470B2 (ja) 2022-05-27

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