JP7139952B2 - 半導体光素子 - Google Patents
半導体光素子 Download PDFInfo
- Publication number
- JP7139952B2 JP7139952B2 JP2019000979A JP2019000979A JP7139952B2 JP 7139952 B2 JP7139952 B2 JP 7139952B2 JP 2019000979 A JP2019000979 A JP 2019000979A JP 2019000979 A JP2019000979 A JP 2019000979A JP 7139952 B2 JP7139952 B2 JP 7139952B2
- Authority
- JP
- Japan
- Prior art keywords
- core
- active layer
- optical device
- layer
- semiconductor optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
- H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0651—Mode control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
- H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/02—Optical fibres with cladding with or without a coating
- G02B6/028—Optical fibres with cladding with or without a coating with core or cladding having graded refractive index
- G02B6/0281—Graded index region forming part of the central core segment, e.g. alpha profile, triangular, trapezoidal core
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
Description
Claims (5)
- 基板の上に形成されたコアからなる光導波路と、
前記コアに沿って延在して、前記コアと光結合可能な状態に、前記基板の上に形成された活性層と、
前記基板の上に、前記活性層に接して形成されたp型半導体層およびn型半導体層と、
前記n型半導体層に接続するn型電極と、
前記p型半導体層に接続するp型電極と、
前記活性層に光閉じ込めを行う共振器構造と
を備え、
前記p型半導体層および前記n型半導体層は、平面視で前記活性層を挾んで形成され、
前記コアは、高次モードが現れる厚さを有し、
前記コアは、SiNまたはSiONから構成され、
前記コアは、屈折率が1.5~2.2の材料で構成され、
前記コアを埋め込んで形成されたクラッドを備え、
前記コアと前記活性層とは、互いに接して配置されている
ことを特徴とする半導体光素子。 - 請求項1記載の半導体光素子において、
前記高次モードは、E12モードであることを特徴とする半導体光素子。 - 請求項1または2記載の半導体光素子において、
前記コアは、前記基板と前記活性層との間に配置されていることを特徴とする半導体光素子。 - 請求項1~3のいずれか1項に記載の半導体光素子において、
前記コアは、前記基板の側から見て前記活性層の上に配置されていることを特徴とする半導体光素子。 - 請求項1~4のいずれか1項に記載の半導体光素子において、
前記コアは、重水素を含むことを特徴とする半導体光素子。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019000979A JP7139952B2 (ja) | 2019-01-08 | 2019-01-08 | 半導体光素子 |
PCT/JP2019/050566 WO2020145128A1 (ja) | 2019-01-08 | 2019-12-24 | 半導体光素子 |
US17/421,237 US11705693B2 (en) | 2019-01-08 | 2019-12-24 | Semiconductor optical element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019000979A JP7139952B2 (ja) | 2019-01-08 | 2019-01-08 | 半導体光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020113567A JP2020113567A (ja) | 2020-07-27 |
JP7139952B2 true JP7139952B2 (ja) | 2022-09-21 |
Family
ID=71521203
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019000979A Active JP7139952B2 (ja) | 2019-01-08 | 2019-01-08 | 半導体光素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11705693B2 (ja) |
JP (1) | JP7139952B2 (ja) |
WO (1) | WO2020145128A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2022113153A1 (ja) * | 2020-11-24 | 2022-06-02 | 日本電信電話株式会社 | 半導体光素子 |
JPWO2022259448A1 (ja) * | 2021-06-10 | 2022-12-15 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001144372A (ja) | 1999-08-27 | 2001-05-25 | Mitsui Chemicals Inc | 半導体レーザ装置 |
JP2013152272A (ja) | 2012-01-24 | 2013-08-08 | Nippon Telegr & Teleph Corp <Ntt> | 高次モード平面光波回路 |
US20130259077A1 (en) | 2010-11-18 | 2013-10-03 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Heterogeneous laser with high efficiency and method for manufacturing the laser |
JP2016051015A (ja) | 2014-08-29 | 2016-04-11 | 日本電信電話株式会社 | 導波路材料膜の形成方法 |
JP2016171173A (ja) | 2015-03-12 | 2016-09-23 | 日本電信電話株式会社 | 半導体光素子 |
JP2016201474A (ja) | 2015-04-10 | 2016-12-01 | 日本電信電話株式会社 | リッジ導波路型半導体レーザ |
US20180323575A1 (en) | 2017-05-05 | 2018-11-08 | International Business Machines Corporation | Electro-optical device with iii-v gain materials and integrated heat sink |
WO2018212195A1 (ja) | 2017-05-15 | 2018-11-22 | 日本電信電話株式会社 | 半導体光素子 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2914282B2 (ja) * | 1996-03-25 | 1999-06-28 | 日本電気株式会社 | 半導体装置の製造方法 |
US6546032B1 (en) * | 1999-08-27 | 2003-04-08 | Mitsui Chemicals, Inc. | Semiconductor laser apparatus |
WO2009054526A1 (ja) * | 2007-10-25 | 2009-04-30 | Nec Corporation | モード同期レーザ |
US7936110B2 (en) * | 2009-03-14 | 2011-05-03 | Delaware Capital Formation, Inc. | Lateral excitation of pure shear modes |
WO2012114866A1 (ja) * | 2011-02-21 | 2012-08-30 | 日本電気株式会社 | スポットサイズ変換器及びその製造方法 |
-
2019
- 2019-01-08 JP JP2019000979A patent/JP7139952B2/ja active Active
- 2019-12-24 WO PCT/JP2019/050566 patent/WO2020145128A1/ja active Application Filing
- 2019-12-24 US US17/421,237 patent/US11705693B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001144372A (ja) | 1999-08-27 | 2001-05-25 | Mitsui Chemicals Inc | 半導体レーザ装置 |
US20130259077A1 (en) | 2010-11-18 | 2013-10-03 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Heterogeneous laser with high efficiency and method for manufacturing the laser |
JP2013152272A (ja) | 2012-01-24 | 2013-08-08 | Nippon Telegr & Teleph Corp <Ntt> | 高次モード平面光波回路 |
JP2016051015A (ja) | 2014-08-29 | 2016-04-11 | 日本電信電話株式会社 | 導波路材料膜の形成方法 |
JP2016171173A (ja) | 2015-03-12 | 2016-09-23 | 日本電信電話株式会社 | 半導体光素子 |
JP2016201474A (ja) | 2015-04-10 | 2016-12-01 | 日本電信電話株式会社 | リッジ導波路型半導体レーザ |
US20180323575A1 (en) | 2017-05-05 | 2018-11-08 | International Business Machines Corporation | Electro-optical device with iii-v gain materials and integrated heat sink |
WO2018212195A1 (ja) | 2017-05-15 | 2018-11-22 | 日本電信電話株式会社 | 半導体光素子 |
Also Published As
Publication number | Publication date |
---|---|
US20220045481A1 (en) | 2022-02-10 |
JP2020113567A (ja) | 2020-07-27 |
US11705693B2 (en) | 2023-07-18 |
WO2020145128A1 (ja) | 2020-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8705583B2 (en) | Semiconductor laser | |
JP6315600B2 (ja) | 半導体光素子 | |
US20020051615A1 (en) | Slab-coupled optical waveguide laser and amplifier | |
US6141365A (en) | Semiconductor laser with kink suppression layer | |
CN105720479B (zh) | 一种具有光束扩散结构的高速半导体激光器 | |
JP2001308451A (ja) | 半導体発光素子 | |
US20040179569A1 (en) | Wavelength tunable DBR laser diode | |
JP2004179274A (ja) | 光半導体装置 | |
US4622674A (en) | Single longitudinal mode semiconductor laser | |
JP6209129B2 (ja) | 半導体光素子 | |
JP7139952B2 (ja) | 半導体光素子 | |
JP2007311522A (ja) | 半導体レーザ | |
JP3745985B2 (ja) | 複素結合型の分布帰還型半導体レーザ素子 | |
JP5310533B2 (ja) | 光半導体装置 | |
JP4953392B2 (ja) | 光半導体装置 | |
US5436924A (en) | Semiconductor laser device | |
JP5310271B2 (ja) | 半導体レーザ素子 | |
JP5286198B2 (ja) | 分布帰還形半導体レーザ | |
JP5163355B2 (ja) | 半導体レーザ装置 | |
JP3700245B2 (ja) | 位相シフト型分布帰還半導体レーザ | |
JP5772466B2 (ja) | 光半導体素子、光送信モジュール、光伝送システム及び光半導体素子の製造方法 | |
JP7112387B2 (ja) | 分布帰還型レーザーダイオード | |
CN113328339B (zh) | 一种高功率分布反馈激光器 | |
WO2000036717A1 (en) | A gain coupled distributed feedback semiconductor laser | |
KR101778016B1 (ko) | 분포궤환형 레이저 다이오드 및 이의 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210413 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220315 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220428 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220809 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220822 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7139952 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |