WO2009054526A1 - モード同期レーザ - Google Patents

モード同期レーザ Download PDF

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Publication number
WO2009054526A1
WO2009054526A1 PCT/JP2008/069444 JP2008069444W WO2009054526A1 WO 2009054526 A1 WO2009054526 A1 WO 2009054526A1 JP 2008069444 W JP2008069444 W JP 2008069444W WO 2009054526 A1 WO2009054526 A1 WO 2009054526A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor laser
mode
electrode semiconductor
laser
locked laser
Prior art date
Application number
PCT/JP2008/069444
Other languages
English (en)
French (fr)
Inventor
Takanori Shimizu
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009538291A priority Critical patent/JPWO2009054526A1/ja
Priority to US12/739,851 priority patent/US8005122B2/en
Publication of WO2009054526A1 publication Critical patent/WO2009054526A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H01S5/0602—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region which is an umpumped part of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06251—Amplitude modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator

Abstract

　可飽和吸収領域(31)と利得領域(32)からなる２電極半導体レーザ３と、この２電極半導体レーザの利得領域(32)側外部に設けられた光導波路(4)とからモード同期レーザを構成し、光導波路(4)を、共振器長が当該モード同期レーザの全共振器長の整数分の１であるリング共振器(43)と、利得帯域よりも帯域幅が狭い帯域フィルタ特性を有するリング共振器(44)と、２電極半導体レーザ(3)から第１および第２のリング共振器を介して届いたレーザ光を２電極半導体レーザ３側へ反射する反射面(46)とから構成する。
PCT/JP2008/069444 2007-10-25 2008-10-27 モード同期レーザ WO2009054526A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009538291A JPWO2009054526A1 (ja) 2007-10-25 2008-10-27 モード同期レーザ
US12/739,851 US8005122B2 (en) 2007-10-25 2008-10-27 Mode-locked laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007277439 2007-10-25
JP2007-277439 2007-10-25

Publications (1)

Publication Number Publication Date
WO2009054526A1 true WO2009054526A1 (ja) 2009-04-30

Family

ID=40579627

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069444 WO2009054526A1 (ja) 2007-10-25 2008-10-27 モード同期レーザ

Country Status (3)

Country Link
US (1) US8005122B2 (ja)
JP (1) JPWO2009054526A1 (ja)
WO (1) WO2009054526A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013114577A1 (ja) * 2012-01-31 2013-08-08 富士通株式会社 レーザ素子
JP2016111087A (ja) * 2014-12-03 2016-06-20 株式会社豊田中央研究所 光半導体素子、光半導体装置および光半導体素子の実装方法
US11791902B2 (en) * 2020-12-16 2023-10-17 Mellanox Technologies, Ltd. Heterogeneous integration of frequency comb generators for high-speed transceivers

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JP5093527B2 (ja) * 2010-02-10 2012-12-12 日本電気株式会社 複合光導波路、波長可変フィルタ、波長可変レーザ、および光集積回路
US8737446B2 (en) * 2010-03-25 2014-05-27 Sumitomo Electric Industries, Ltd. Semiconductor laser
JP5867509B2 (ja) * 2011-09-08 2016-02-24 富士通株式会社 光半導体素子
JP5929331B2 (ja) * 2012-03-06 2016-06-01 ソニー株式会社 記録装置
WO2014118836A1 (ja) * 2013-02-01 2014-08-07 日本電気株式会社 光機能集積ユニット及びその製造方法
GB2522252B (en) 2014-01-20 2016-04-20 Rockley Photonics Ltd Tunable SOI laser
WO2015183365A2 (en) * 2014-03-07 2015-12-03 Santec Corporation External cavity laser with single mode-hop-free tuning
US10869623B2 (en) 2014-05-28 2020-12-22 Santec Corporation Non-invasive optical measurement of blood analyte
US10548520B2 (en) 2015-04-01 2020-02-04 Santec Corporation Non-invasive optical measurement of blood analyte
US10426336B2 (en) 2015-06-01 2019-10-01 Santec Corporation Optical coherence tomography system combining two wavelengths
US11699892B2 (en) 2016-02-19 2023-07-11 Rockley Photonics Limited Discrete wavelength tunable laser
GB2547467A (en) 2016-02-19 2017-08-23 Rockley Photonics Ltd Tunable laser
US10677580B2 (en) 2016-04-27 2020-06-09 Santec Corporation Optical coherence tomography system using polarization switching
US9993153B2 (en) 2016-07-06 2018-06-12 Santec Corporation Optical coherence tomography system and method with multiple apertures
US10426337B2 (en) 2017-06-01 2019-10-01 Santec Corporation Flow imaging in an optical coherence tomography (OCT) system
US10811848B2 (en) 2017-06-14 2020-10-20 Rockley Photonics Limited Broadband arbitrary wavelength multichannel laser source
US10408600B2 (en) 2017-06-22 2019-09-10 Santec Corporation Optical coherence tomography with a fizeau-type interferometer
US10206567B2 (en) 2017-07-12 2019-02-19 Santec Corporation Dual wavelength resampling system and method
US10840672B2 (en) * 2017-08-18 2020-11-17 Nokia Solutions And Networks Oy Mode-locked semiconductor laser capable of changing output-comb frequency spacing
US10502546B2 (en) 2017-11-07 2019-12-10 Santec Corporation Systems and methods for variable-range fourier domain imaging
US11213200B2 (en) 2018-03-22 2022-01-04 Santec Corporation Topographical imaging using combined sensing inputs
US10838047B2 (en) 2018-04-17 2020-11-17 Santec Corporation Systems and methods for LIDAR scanning of an environment over a sweep of wavelengths
US11067671B2 (en) 2018-04-17 2021-07-20 Santec Corporation LIDAR sensing arrangements
JP7211017B2 (ja) 2018-11-02 2023-01-24 株式会社デンソー 光フィルタ、それを用いたレーザ光源および光送受信装置
JP7139952B2 (ja) * 2019-01-08 2022-09-21 日本電信電話株式会社 半導体光素子
CN110703533A (zh) * 2019-10-22 2020-01-17 成都天奥电子股份有限公司 一种基于光纤环形干涉仪的光学频率梳重复频率倍频器
KR20210150225A (ko) * 2020-06-03 2021-12-10 삼성전자주식회사 파장 가변 레이저 광원 및 이를 포함하는 광 조향 장치
US11728619B2 (en) * 2020-07-07 2023-08-15 Marvell Asia Pte Ltd Side mode suppression for extended c-band tunable laser
US20210057880A1 (en) * 2020-10-19 2021-02-25 Intel Corporation Multi-wavelength laser generator using ring filter
US20230092838A1 (en) * 2021-09-23 2023-03-23 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor device and glasses

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013114577A1 (ja) * 2012-01-31 2013-08-08 富士通株式会社 レーザ素子
JPWO2013114577A1 (ja) * 2012-01-31 2015-05-11 富士通株式会社 レーザ素子
US9130350B2 (en) 2012-01-31 2015-09-08 Fujitsu Limited Laser device that includes ring resonator
JP2016111087A (ja) * 2014-12-03 2016-06-20 株式会社豊田中央研究所 光半導体素子、光半導体装置および光半導体素子の実装方法
US11791902B2 (en) * 2020-12-16 2023-10-17 Mellanox Technologies, Ltd. Heterogeneous integration of frequency comb generators for high-speed transceivers

Also Published As

Publication number Publication date
JPWO2009054526A1 (ja) 2011-03-10
US20100246612A1 (en) 2010-09-30
US8005122B2 (en) 2011-08-23

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