WO2002063732A3 - Laserstruktur und verfahren zur einstellung einer definierten wellenlänge - Google Patents

Laserstruktur und verfahren zur einstellung einer definierten wellenlänge Download PDF

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Publication number
WO2002063732A3
WO2002063732A3 PCT/DE2002/000259 DE0200259W WO02063732A3 WO 2002063732 A3 WO2002063732 A3 WO 2002063732A3 DE 0200259 W DE0200259 W DE 0200259W WO 02063732 A3 WO02063732 A3 WO 02063732A3
Authority
WO
WIPO (PCT)
Prior art keywords
resonator
laser structure
defined wavelength
adjusting
semiconductor substrate
Prior art date
Application number
PCT/DE2002/000259
Other languages
English (en)
French (fr)
Other versions
WO2002063732A2 (de
Inventor
Bernhard Stegmueller
Original Assignee
Infineon Technologies Ag
Bernhard Stegmueller
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Bernhard Stegmueller filed Critical Infineon Technologies Ag
Priority to US10/467,191 priority Critical patent/US20040114658A1/en
Priority to KR10-2003-7010410A priority patent/KR20030077016A/ko
Priority to JP2002563572A priority patent/JP2004525507A/ja
Priority to EP02706629A priority patent/EP1358701A2/de
Publication of WO2002063732A2 publication Critical patent/WO2002063732A2/de
Publication of WO2002063732A3 publication Critical patent/WO2002063732A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator

Abstract

Die Erfindung betrifft eine Laserstruktur auf einem Halbleitersubstrat, die einen ersten Resonator, einen zweiten Resonator und einen dritten Resonator aufweist. Der zweite Resonator und der dritte Resonator sind als Ringresonatoren ausgebildet und in zumindest einem gemeinsamen Abschnitt neben dem ersten Resonator bzw. Neben dem zweiten Resonator im wesentlichen mit konstantem Abstand zu dem ersten Resonator bzw. Zu dem zweiten Resonator angeordnet. Dadurch sind der zweite Resonator an den ersten Resonator und der dritte Resonator über den zweiten Resonator bzw. Direkt an den ersten Resonator derart optisch gekoppelt, dass sich in dem ersten Resonator eine stehende Welle mit einer definierten Wellenlänge ausbilden kann.
PCT/DE2002/000259 2001-02-08 2002-01-25 Laserstruktur und verfahren zur einstellung einer definierten wellenlänge WO2002063732A2 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US10/467,191 US20040114658A1 (en) 2001-02-08 2002-01-25 Laser structure and method for adjusting a defined wavelength
KR10-2003-7010410A KR20030077016A (ko) 2001-02-08 2002-01-25 일정 파장을 설정하기 위한 레이저 구조체 및 방법
JP2002563572A JP2004525507A (ja) 2001-02-08 2002-01-25 レーザー構造および所定波長の調節方法
EP02706629A EP1358701A2 (de) 2001-02-08 2002-01-25 Laserstruktur und verfahren zur einstellung einer definierten wellenlänge

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10105731.8 2001-02-08
DE10105731A DE10105731A1 (de) 2001-02-08 2001-02-08 Laserstruktur und Verfahren zur Einstellung einer definierten Wellenlänge

Publications (2)

Publication Number Publication Date
WO2002063732A2 WO2002063732A2 (de) 2002-08-15
WO2002063732A3 true WO2002063732A3 (de) 2002-11-14

Family

ID=7673283

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/000259 WO2002063732A2 (de) 2001-02-08 2002-01-25 Laserstruktur und verfahren zur einstellung einer definierten wellenlänge

Country Status (7)

Country Link
US (1) US20040114658A1 (de)
EP (1) EP1358701A2 (de)
JP (1) JP2004525507A (de)
KR (1) KR20030077016A (de)
DE (1) DE10105731A1 (de)
TW (1) TW522620B (de)
WO (1) WO2002063732A2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL152195A0 (en) * 2002-10-09 2003-05-29 Lambda Crossing Ltd Tunable laser
JP4774761B2 (ja) 2005-03-03 2011-09-14 日本電気株式会社 波長可変共振器、波長可変レーザ、光モジュール及びそれらの制御方法
JP4945907B2 (ja) 2005-03-03 2012-06-06 日本電気株式会社 波長可変レーザ
US9529153B2 (en) * 2015-05-01 2016-12-27 Xyratex Technology Limited Optical apparatus including nested resonator
US11239634B2 (en) * 2016-02-29 2022-02-01 Unm Rainforest Innovations Ring laser integrated with silicon-on-insulator waveguide
KR20210150225A (ko) * 2020-06-03 2021-12-10 삼성전자주식회사 파장 가변 레이저 광원 및 이를 포함하는 광 조향 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5398256A (en) * 1993-05-10 1995-03-14 The United States Of America As Represented By The United States Department Of Energy Interferometric ring lasers and optical devices
EP1058358A1 (de) * 1999-05-17 2000-12-06 Interuniversitair Micro-Elektronica Centrum Im grossem Bereich wellenlängenabstimmbare integrierte Halbleitervorrichtung und Verfahren zur Wellenlängenabstimmung von Halbleitervorrichtungen

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04349682A (ja) * 1991-05-27 1992-12-04 Fujitsu Ltd 結合モード型半導体レーザ
IL132385A0 (en) * 1999-10-14 2001-03-19 Lambda Crossing Ltd An integrated optical device for data communications

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5398256A (en) * 1993-05-10 1995-03-14 The United States Of America As Represented By The United States Department Of Energy Interferometric ring lasers and optical devices
EP1058358A1 (de) * 1999-05-17 2000-12-06 Interuniversitair Micro-Elektronica Centrum Im grossem Bereich wellenlängenabstimmbare integrierte Halbleitervorrichtung und Verfahren zur Wellenlängenabstimmung von Halbleitervorrichtungen

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ABSIL P P ET AL: "VERTICALLY COUPLED MICRORING RESONATORS USING POLYMER WAFER BONDING", IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 13, no. 1, January 2001 (2001-01-01), pages 49 - 51, XP001025427, ISSN: 1041-1135 *
MARTIN J C ET AL: "DOUBLE RING AND FABRY-PEROT RING RESONATORS: APPLICATON FOR AN OPTICAL FIBER LASER", APPLIED OPTICS, OPTICAL SOCIETY OF AMERICA,WASHINGTON, US, vol. 33, no. 21, 20 July 1994 (1994-07-20), pages 4801 - 4806, XP000458363, ISSN: 0003-6935 *
SOREL M ET AL: "Semiconductor double ring waveguide resonators", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 35, no. 18, 2 September 1999 (1999-09-02), pages 1551 - 1552, XP006012655, ISSN: 0013-5194 *

Also Published As

Publication number Publication date
TW522620B (en) 2003-03-01
EP1358701A2 (de) 2003-11-05
WO2002063732A2 (de) 2002-08-15
KR20030077016A (ko) 2003-09-29
JP2004525507A (ja) 2004-08-19
DE10105731A1 (de) 2002-09-05
US20040114658A1 (en) 2004-06-17

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