JP2020514549A - 技術的マスクの製造方法 - Google Patents
技術的マスクの製造方法 Download PDFInfo
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- JP2020514549A JP2020514549A JP2019548397A JP2019548397A JP2020514549A JP 2020514549 A JP2020514549 A JP 2020514549A JP 2019548397 A JP2019548397 A JP 2019548397A JP 2019548397 A JP2019548397 A JP 2019548397A JP 2020514549 A JP2020514549 A JP 2020514549A
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- Japan
- Prior art keywords
- mask
- substrate
- etching
- plate
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000011521 glass Substances 0.000 claims abstract description 19
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 4
- 239000010703 silicon Substances 0.000 claims abstract description 4
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 3
- 239000010980 sapphire Substances 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 40
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 claims description 7
- 230000007797 corrosion Effects 0.000 claims description 7
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- 230000004048 modification Effects 0.000 claims description 5
- 238000012986 modification Methods 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 10
- 238000003754 machining Methods 0.000 abstract description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 abstract description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000002313 adhesive film Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000007614 solvation Methods 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
- C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/54—Glass
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Optics & Photonics (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Surface Treatment Of Glass (AREA)
- Laser Beam Processing (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Manufacture Or Reproduction Of Printing Formes (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
フッ化水素酸:
− 濃度:1〜20%
− 温度:5〜40℃
− 第2の酸:H2SO4、HCL、H3PO4
水酸化カリウム溶液:
− 濃度:10〜60%
− 温度:85〜160℃
・ より高い精度(塑性変形なし)
・ より高い硬度、つまりより耐摩耗性
・ ケイ素、セラミックのような熱膨張
・ より高い化学的および機械的な耐性
・ 透明な特性に基づく、光学的方法による簡略化された位置合わせ
2 基材
3 輪郭
4 加工線
5 エッチングレジスト
6 負荷軽減開口部
7 エッチングリップ
8 空隙
s 厚さ
Claims (16)
- マスクが少なくとも板状の基材から成り、かつ前記板状の基材が少なくともレーザ波長に対して透明であり、かつ前記マスクの少なくとも1つの開口部がレーザ誘起深堀エッチングによって製造されたことを特徴とする、技術的マスクの製造方法。
- 前記レーザ誘起深堀エッチングの際のエッチング腐食が、少なくとも一時的には片面で起こることを特徴とする、請求項1に記載の方法。
- 前記板状の基材の材料が、ガラス、ケイ素、サファイアから選択されることを特徴とする、請求項1または2に記載の方法。
- レーザ改質またはエッチング腐食の際のパラメータは、前記マスクの前記開口部が、>5°、好ましくは>15°、特に好ましくは>25°、特に好ましくは>35°の開き角度を有するように選択されることを特徴とする、請求項1〜3のいずれか一つに記載の方法。
- 前記マスクが、前記板状の基材材料のほかに、少なくとも1つのさらなるコンポーネントから成ることを特徴とする、請求項1〜4のいずれか一つに記載の方法。
- 前記第2のコンポーネントがフレームであることを特徴とする、請求項5に記載の方法。
- 前記第2のコンポーネントが、前記板状の基材材料を張るための少なくとも1つの装置を備えていることを特徴とする、請求項5または6に記載の方法。
- 前記板状の基材材料が少なくとも部分的に、伸び構造を備えていることを特徴とする、請求項7に記載の方法。
- とりわけ前記板状の基材(2)の縁領域内に、とりわけスリット状の負荷軽減開口部(6)が施されることを特徴とする、請求項1〜8のいずれか一つに記載の方法。
- 前記負荷軽減開口部(6)が、まっすぐにのびたまたは螺旋状の幾何形状を有することを特徴とする、請求項10に記載の方法。
- 前記板状の基材が、<250μm、好ましくは<150μm、特に好ましくは<75μmの厚さを有することを特徴とする、請求項1〜10のいずれか一つに記載の方法。
- 前記板状の基材に選択的にエッチングマスクが備えられ、それにより前記エッチング腐食が少なくとも局所的に妨げられ、それにより高さプロファイルをもつマスクが生じることを特徴とする、請求項1〜11のいずれか一つに記載の方法。
- 前記マスクに少なくとも部分的に金属層が備えられることを特徴とする、請求項1〜12のいずれか一つに記載の方法。
- 再利用可能なマスクを使った構造化された材料塗布または材料除去のための方法において、前記マスクが、請求項1〜13のいずれか一つに基づいて製造されており、かつ前記マスクが、コーティングすべきまたは除去すべき前記材料に対して位置合わせされることを特徴とする方法。
- 再利用可能なマスクを使った構造化された材料塗布または材料除去のための請求項11に記載の方法において、前記位置合わせが、表面構造、空隙、または前記マスク上に堆積された層に基づいて取得される情報に基づいて行われる方法。
- 前記改質を有する前記基材(2)が第1のエッチング溶液中で処理され、これにより輪郭(3)が、加工線(4)に沿って完全に分離され、かつとりわけクロムを主成分として含有するエッチングレジスト(5)によってのみ、前記基材(2)の隣接する領域と結合していること、および続いて、さらなるエッチング溶液中で前記エッチングレジスト(5)が取り去られ、かつ前記加工線(4)に囲まれた領域が、前記基材(2)から分離されることを特徴とする、請求項1〜15のいずれか一つに記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102017104656.9 | 2017-03-06 | ||
DE102017104656 | 2017-03-06 | ||
DE102017104657.7 | 2017-03-06 | ||
DE102017104657 | 2017-03-06 | ||
PCT/EP2018/055301 WO2018162386A1 (de) | 2017-03-06 | 2018-03-05 | Verfahren zur herstellung einer technischen maske |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020514549A true JP2020514549A (ja) | 2020-05-21 |
JP6963023B2 JP6963023B2 (ja) | 2021-11-05 |
Family
ID=61569274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019548397A Active JP6963023B2 (ja) | 2017-03-06 | 2018-03-05 | 技術的マスクの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11072041B2 (ja) |
EP (2) | EP3592501B1 (ja) |
JP (1) | JP6963023B2 (ja) |
KR (2) | KR20190116379A (ja) |
CN (1) | CN110382161B (ja) |
WO (1) | WO2018162386A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102058173B1 (ko) * | 2018-03-21 | 2019-12-20 | (주)비젼에이드 | 엘코스(LCoS) 디스플레이용 무기 배향막 형성 장치 |
US11805678B2 (en) | 2019-11-21 | 2023-10-31 | Samsung Display Co., Ltd. | Display device, mask assembly, method of manufacturing the mask assembly, apparatus for manufacturing the display device, and method of manufacturing the display device |
US11638388B2 (en) * | 2020-05-15 | 2023-04-25 | The Hong Kong University Of Science And Technology | High-resolution shadow masks |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005190857A (ja) * | 2003-12-26 | 2005-07-14 | Seiko Epson Corp | マスク、マスクの製造方法、有機エレクトロルミネッセンス装置の製造方法、有機エレクトロルミネッセンス装置の製造装置、有機エレクトロルミネッセンス装置、及び電子機器 |
JP2015103427A (ja) * | 2013-11-26 | 2015-06-04 | 株式会社ジャパンディスプレイ | 表示装置の製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11240159A (ja) * | 1998-02-26 | 1999-09-07 | Oki Data Corp | ノズルプレートの製造方法 |
JP2002103838A (ja) | 2000-09-27 | 2002-04-09 | Tokyo Process Service Kk | メタルマスク及びそれを備えたメタルマスク印刷版 |
KR100490534B1 (ko) * | 2001-12-05 | 2005-05-17 | 삼성에스디아이 주식회사 | 유기 전자 발광 소자의 박막 증착용 마스크 프레임 조립체 |
KR101511926B1 (ko) * | 2003-04-09 | 2015-04-13 | 호야 가부시키가이샤 | 포토 마스크의 제조방법 및 포토 마스크 블랭크 |
JP2007069216A (ja) | 2005-09-02 | 2007-03-22 | Nippon Sheet Glass Co Ltd | 無機材料の加工方法 |
JP4672689B2 (ja) | 2006-02-22 | 2011-04-20 | 日本板硝子株式会社 | レーザを用いたガラスの加工方法および加工装置 |
US8642448B2 (en) * | 2010-06-22 | 2014-02-04 | Applied Materials, Inc. | Wafer dicing using femtosecond-based laser and plasma etch |
JP5574866B2 (ja) | 2010-07-26 | 2014-08-20 | 浜松ホトニクス株式会社 | レーザ加工方法 |
US9446590B2 (en) * | 2012-08-16 | 2016-09-20 | Hewlett-Packard Development Company, L.P. | Diagonal openings in photodefinable glass |
WO2014085660A1 (en) | 2012-11-29 | 2014-06-05 | Corning Incorporated | Sacrificial cover layers for laser drilling substrates and methods thereof |
CN203128640U (zh) * | 2013-03-06 | 2013-08-14 | 唐军 | 易焊接掩模板 |
MY178429A (en) | 2013-04-04 | 2020-10-13 | Lpkf Laser & Electronics Ag | Method and device for providing through-openings in a substrate and a substrate produced in said manner |
KR20230084606A (ko) | 2014-09-16 | 2023-06-13 | 엘피케이에프 레이저 앤드 일렉트로닉스 에스이 | 판 모양의 작업물 안으로 적어도 하나의 컷아웃부 또는 구멍을 도입하기 위한 방법 |
CN104867813B (zh) * | 2015-04-08 | 2018-07-10 | 信利(惠州)智能显示有限公司 | 非金属图案的制作方法 |
-
2018
- 2018-03-05 CN CN201880016177.7A patent/CN110382161B/zh active Active
- 2018-03-05 EP EP18708997.4A patent/EP3592501B1/de active Active
- 2018-03-05 KR KR1020197026164A patent/KR20190116379A/ko not_active Application Discontinuation
- 2018-03-05 WO PCT/EP2018/055301 patent/WO2018162386A1/de unknown
- 2018-03-05 EP EP21194589.4A patent/EP3967442A1/de active Pending
- 2018-03-05 KR KR1020217015492A patent/KR102481312B1/ko active IP Right Grant
- 2018-03-05 JP JP2019548397A patent/JP6963023B2/ja active Active
- 2018-03-05 US US16/490,901 patent/US11072041B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005190857A (ja) * | 2003-12-26 | 2005-07-14 | Seiko Epson Corp | マスク、マスクの製造方法、有機エレクトロルミネッセンス装置の製造方法、有機エレクトロルミネッセンス装置の製造装置、有機エレクトロルミネッセンス装置、及び電子機器 |
JP2015103427A (ja) * | 2013-11-26 | 2015-06-04 | 株式会社ジャパンディスプレイ | 表示装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2018162386A1 (de) | 2018-09-13 |
KR20210063452A (ko) | 2021-06-01 |
US11072041B2 (en) | 2021-07-27 |
EP3592501A1 (de) | 2020-01-15 |
US20200016696A1 (en) | 2020-01-16 |
EP3592501B1 (de) | 2021-10-06 |
CN110382161B (zh) | 2022-06-14 |
CN110382161A (zh) | 2019-10-25 |
KR20190116379A (ko) | 2019-10-14 |
JP6963023B2 (ja) | 2021-11-05 |
KR102481312B1 (ko) | 2022-12-23 |
EP3967442A1 (de) | 2022-03-16 |
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