JP2020507678A5 - - Google Patents

Download PDF

Info

Publication number
JP2020507678A5
JP2020507678A5 JP2019542079A JP2019542079A JP2020507678A5 JP 2020507678 A5 JP2020507678 A5 JP 2020507678A5 JP 2019542079 A JP2019542079 A JP 2019542079A JP 2019542079 A JP2019542079 A JP 2019542079A JP 2020507678 A5 JP2020507678 A5 JP 2020507678A5
Authority
JP
Japan
Prior art keywords
workpiece
pulse voltage
voltage source
coupled
plasma chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2019542079A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020507678A (ja
Filing date
Publication date
Priority claimed from US15/424,405 external-priority patent/US10373804B2/en
Application filed filed Critical
Publication of JP2020507678A publication Critical patent/JP2020507678A/ja
Publication of JP2020507678A5 publication Critical patent/JP2020507678A5/ja
Pending legal-status Critical Current

Links

JP2019542079A 2017-02-03 2018-01-29 プラズマリアクタ内での調整可能なワークピースバイアス用システム Pending JP2020507678A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/424,405 2017-02-03
US15/424,405 US10373804B2 (en) 2017-02-03 2017-02-03 System for tunable workpiece biasing in a plasma reactor
PCT/US2018/015688 WO2018144374A1 (en) 2017-02-03 2018-01-29 System for tunable workpiece biasing in a plasma reactor

Publications (2)

Publication Number Publication Date
JP2020507678A JP2020507678A (ja) 2020-03-12
JP2020507678A5 true JP2020507678A5 (https=) 2021-02-25

Family

ID=63037325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019542079A Pending JP2020507678A (ja) 2017-02-03 2018-01-29 プラズマリアクタ内での調整可能なワークピースバイアス用システム

Country Status (6)

Country Link
US (3) US10373804B2 (https=)
JP (1) JP2020507678A (https=)
KR (1) KR20190105243A (https=)
CN (1) CN110249407A (https=)
TW (1) TW201832620A (https=)
WO (1) WO2018144374A1 (https=)

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US10892140B2 (en) 2018-07-27 2021-01-12 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10978955B2 (en) 2014-02-28 2021-04-13 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US11539352B2 (en) 2013-11-14 2022-12-27 Eagle Harbor Technologies, Inc. Transformer resonant converter
US10020800B2 (en) 2013-11-14 2018-07-10 Eagle Harbor Technologies, Inc. High voltage nanosecond pulser with variable pulse width and pulse repetition frequency
WO2015073921A1 (en) 2013-11-14 2015-05-21 Eagle Harbor Technologies, Inc. This disclosure relates generally to a high voltage nanosecond pulser.
US10483089B2 (en) 2014-02-28 2019-11-19 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US10903047B2 (en) 2018-07-27 2021-01-26 Eagle Harbor Technologies, Inc. Precise plasma control system
US11227745B2 (en) 2018-08-10 2022-01-18 Eagle Harbor Technologies, Inc. Plasma sheath control for RF plasma reactors
US11824454B2 (en) * 2016-06-21 2023-11-21 Eagle Harbor Technologies, Inc. Wafer biasing in a plasma chamber
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
US10373804B2 (en) * 2017-02-03 2019-08-06 Applied Materials, Inc. System for tunable workpiece biasing in a plasma reactor
WO2018148182A1 (en) 2017-02-07 2018-08-16 Eagle Harbor Technologies, Inc. Transformer resonant converter
JP6902167B2 (ja) 2017-08-25 2021-07-14 イーグル ハーバー テクノロジーズ, インク.Eagle Harbor Technologies, Inc. ナノ秒パルスを使用する任意波形の発生
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US20190088518A1 (en) * 2017-09-20 2019-03-21 Applied Materials, Inc. Substrate support with cooled and conducting pins
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
JP7289313B2 (ja) 2017-11-17 2023-06-09 エーイーエス グローバル ホールディングス, プライベート リミテッド プラズマ処理のためのイオンバイアス電圧の空間的および時間的制御
WO2019099870A1 (en) 2017-11-17 2019-05-23 Advanced Energy Industries, Inc. Synchronized pulsing of plasma processing source and substrate bias
KR20250153883A (ko) 2017-11-17 2025-10-27 에이이에스 글로벌 홀딩스 피티이 리미티드 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US11302518B2 (en) 2018-07-27 2022-04-12 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
US10607814B2 (en) 2018-08-10 2020-03-31 Eagle Harbor Technologies, Inc. High voltage switch with isolated power
US11810761B2 (en) 2018-07-27 2023-11-07 Eagle Harbor Technologies, Inc. Nanosecond pulser ADC system
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
US11222767B2 (en) 2018-07-27 2022-01-11 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10991550B2 (en) * 2018-09-04 2021-04-27 Lam Research Corporation Modular recipe controlled calibration (MRCC) apparatus used to balance plasma in multiple station system
US10703654B2 (en) * 2018-11-07 2020-07-07 Pear Labs Llc Non-thermal multiple plasma gate devices
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US12456604B2 (en) 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
TWI783203B (zh) 2019-01-08 2022-11-11 美商鷹港科技股份有限公司 奈秒脈波產生器電路
US11955314B2 (en) 2019-01-09 2024-04-09 Tokyo Electron Limited Plasma processing apparatus
JP7406965B2 (ja) * 2019-01-09 2023-12-28 東京エレクトロン株式会社 プラズマ処理装置
CN119153304A (zh) * 2019-01-09 2024-12-17 东京毅力科创株式会社 等离子体处理装置及等离子体处理方法
KR102744694B1 (ko) * 2019-01-10 2024-12-19 삼성전자주식회사 플라즈마 처리 방법 및 플라즈마 처리 장치
CN118315254A (zh) 2019-01-22 2024-07-09 应用材料公司 用于控制脉冲电压波形的反馈回路
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
US11488796B2 (en) * 2019-04-24 2022-11-01 Applied Materials, Inc. Thermal break for high-frequency antennae
NL2022999B1 (en) * 2019-04-24 2020-11-02 Prodrive Tech Bv Voltage waveform generator for plasma processing apparatuses
TW202536923A (zh) 2019-07-12 2025-09-16 新加坡商Aes 全球公司 具有控制開關之偏壓供應器
JP7474651B2 (ja) * 2019-09-09 2024-04-25 東京エレクトロン株式会社 プラズマ処理装置
US11043387B2 (en) 2019-10-30 2021-06-22 Applied Materials, Inc. Methods and apparatus for processing a substrate
TWI778449B (zh) 2019-11-15 2022-09-21 美商鷹港科技股份有限公司 高電壓脈衝電路
EP4486072A3 (en) 2019-12-24 2025-04-09 Eagle Harbor Technologies, Inc. Nanosecond pulser rf isolation for plasma systems
CN110936596A (zh) * 2019-12-27 2020-03-31 河南先途智能科技有限公司 低温等离子技术处理鞋材表面的工艺方法
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
US11967484B2 (en) 2020-07-09 2024-04-23 Eagle Harbor Technologies, Inc. Ion current droop compensation
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12525441B2 (en) * 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US20220399186A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US20230130986A1 (en) * 2021-10-21 2023-04-27 Applied Materials, Inc. Plasma processing chambers configured for tunable substrate and edge sheath control
US11664195B1 (en) 2021-11-11 2023-05-30 Velvetch Llc DC plasma control for electron enhanced material processing
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11688588B1 (en) * 2022-02-09 2023-06-27 Velvetch Llc Electron bias control signals for electron enhanced material processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US11824542B1 (en) 2022-06-29 2023-11-21 Eagle Harbor Technologies, Inc. Bipolar high voltage pulser
CN115159865B (zh) * 2022-07-26 2023-05-09 艾瑞森表面技术(苏州)股份有限公司 一种防眩光的表面处理方法
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply
US20240096594A1 (en) * 2022-09-19 2024-03-21 Adaptive Plasma Technology Corp. System for etching with a plasma
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
JP7833099B2 (ja) 2022-09-29 2026-03-18 イーグル ハーバー テクノロジーズ,インク. 高電圧プラズマ制御
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
US11869747B1 (en) 2023-01-04 2024-01-09 Velvetch Llc Atomic layer etching by electron wavefront
KR20240121029A (ko) 2023-02-01 2024-08-08 삼성전자주식회사 기판 처리 장치 및 이를 이용한 기판 처리 방법
US20240347323A1 (en) * 2023-04-14 2024-10-17 Velvetch Llc Composite stage for electron enhanced material processing
US12567572B2 (en) 2023-07-11 2026-03-03 Advanced Energy Industries, Inc. Plasma behaviors predicted by current measurements during asymmetric bias waveform application
JP7508758B1 (ja) 2024-02-08 2024-07-02 京都電機器株式会社 プラズマエッチング装置用パルス電源装置及びパルス電圧生成方法
KR102691602B1 (ko) * 2024-03-22 2024-08-05 브이엠 주식회사 기판 손상 감소 구조의 원자층 식각 장치

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4013271B2 (ja) * 1997-01-16 2007-11-28 日新電機株式会社 物品表面処理方法及び装置
US6287435B1 (en) * 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
WO2002073654A1 (en) * 2001-03-13 2002-09-19 Applied Materials, Inc. Plasma chamber support having dual electrodes
US6597117B2 (en) * 2001-11-30 2003-07-22 Samsung Austin Semiconductor, L.P. Plasma coil
JP4701691B2 (ja) * 2004-11-29 2011-06-15 東京エレクトロン株式会社 エッチング方法
JP4753306B2 (ja) * 2006-03-29 2011-08-24 東京エレクトロン株式会社 プラズマ処理装置
US7780864B2 (en) 2006-04-24 2010-08-24 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution
JP5224837B2 (ja) * 2008-02-01 2013-07-03 株式会社東芝 基板のプラズマ処理装置及びプラズマ処理方法
US8382999B2 (en) 2009-03-26 2013-02-26 Applied Materials, Inc. Pulsed plasma high aspect ratio dielectric process
JP5496568B2 (ja) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US8404598B2 (en) 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
JP2012044045A (ja) * 2010-08-20 2012-03-01 Toshiba Corp 制御装置、プラズマ処理装置、及び制御方法
US8232193B2 (en) * 2010-07-08 2012-07-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming Cu pillar capped by barrier layer
KR20120022251A (ko) * 2010-09-01 2012-03-12 삼성전자주식회사 플라즈마 식각방법 및 그의 장치
JP5172928B2 (ja) * 2010-09-30 2013-03-27 株式会社東芝 基板処理方法および基板処理装置
JP6212363B2 (ja) * 2012-11-19 2017-10-11 太陽誘電ケミカルテクノロジー株式会社 構造体及びその製造方法
US9460894B2 (en) 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
JP5701958B2 (ja) * 2013-10-15 2015-04-15 東京エレクトロン株式会社 基板処理装置
KR20160022458A (ko) 2014-08-19 2016-03-02 삼성전자주식회사 플라즈마 장비 및 이의 동작 방법
US9536749B2 (en) * 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
JP6726856B2 (ja) * 2015-07-17 2020-07-22 パナソニックIpマネジメント株式会社 注意情報提示装置および注意情報提示方法
US9697990B2 (en) * 2015-11-16 2017-07-04 Tokyo Electron Limited Etching method for a structure pattern layer having a first material and second material
US9966231B2 (en) 2016-02-29 2018-05-08 Lam Research Corporation Direct current pulsing plasma systems
US10373804B2 (en) * 2017-02-03 2019-08-06 Applied Materials, Inc. System for tunable workpiece biasing in a plasma reactor

Similar Documents

Publication Publication Date Title
JP2020507678A5 (https=)
KR20180084647A (ko) 플라즈마 처리 장치
EP4376061A3 (en) Spatial and temporal control of ion bias voltage for plasma processing
WO2020037331A8 (en) Systems and methods of control for plasma processing
JP2019004027A5 (https=)
WO2016070006A3 (en) Object decontamination apparatus and method
JP2018195588A5 (https=)
EP4421042A3 (en) Fluid treatment systems and methods of using the same
JP2016092342A5 (https=)
JP2016213358A5 (https=)
JP2018517902A5 (https=)
EP3591742A4 (en) PRELIMINATION DEVICE, METHOD FOR PRODUCING A NEGATIVE ELECTRODE PART USING THEREOF AND NEGATIVE ELECTRODE PART
EA202092537A3 (ru) Способ и система для приложения электрических полей к нескольким солнечным панелям
JP2018107304A5 (https=)
JP2020017565A5 (https=)
RU2016129486A (ru) Система и способ для лечения плазмой с использованием энергетической системы направленного диэлектрического барьерного разряда
MX2019004015A (es) Sistema y metodo para soldadura por arco en corto.
JP2017525358A5 (https=)
MY186425A (en) Systems and methods for reducing undesired eddy currents
JP2019057375A5 (https=)
SG10201803487XA (en) Substrate processing apparatus and method of controlling the same
EP4379768A3 (en) Device and method for treating lenses
EP4022251A4 (en) PVD ENDPOINT DETECTION BY ELECTRON BEAM AND CLOSED-LOOP PROCESS CONTROL SYSTEMS
EP4080542A4 (en) CONTROL CIRCUIT, PULSED POWER SOURCE SYSTEM AND SEMICONDUCTOR PROCESSING DEVICE
JP2018067408A5 (https=)