JP2021004396A5 - - Google Patents

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Publication number
JP2021004396A5
JP2021004396A5 JP2019118676A JP2019118676A JP2021004396A5 JP 2021004396 A5 JP2021004396 A5 JP 2021004396A5 JP 2019118676 A JP2019118676 A JP 2019118676A JP 2019118676 A JP2019118676 A JP 2019118676A JP 2021004396 A5 JP2021004396 A5 JP 2021004396A5
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JP
Japan
Prior art keywords
plasma
voltage
unit
chamber
irradiation device
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JP2019118676A
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English (en)
Japanese (ja)
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JP7313929B2 (ja
JP2021004396A (ja
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Priority claimed from JP2019118676A external-priority patent/JP7313929B2/ja
Priority to JP2019118676A priority Critical patent/JP7313929B2/ja
Priority to TW109121326A priority patent/TWI757771B/zh
Priority to KR1020200076246A priority patent/KR102822519B1/ko
Priority to CN202010587965.0A priority patent/CN112144020A/zh
Priority to US16/913,620 priority patent/US11694877B2/en
Publication of JP2021004396A publication Critical patent/JP2021004396A/ja
Publication of JP2021004396A5 publication Critical patent/JP2021004396A5/ja
Publication of JP7313929B2 publication Critical patent/JP7313929B2/ja
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JP2019118676A 2019-06-26 2019-06-26 負イオン照射装置 Active JP7313929B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2019118676A JP7313929B2 (ja) 2019-06-26 2019-06-26 負イオン照射装置
TW109121326A TWI757771B (zh) 2019-06-26 2020-06-23 負離子照射裝置
KR1020200076246A KR102822519B1 (ko) 2019-06-26 2020-06-23 음이온조사장치
CN202010587965.0A CN112144020A (zh) 2019-06-26 2020-06-24 负离子照射装置
US16/913,620 US11694877B2 (en) 2019-06-26 2020-06-26 Negative ion irradiation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019118676A JP7313929B2 (ja) 2019-06-26 2019-06-26 負イオン照射装置

Publications (3)

Publication Number Publication Date
JP2021004396A JP2021004396A (ja) 2021-01-14
JP2021004396A5 true JP2021004396A5 (https=) 2022-05-24
JP7313929B2 JP7313929B2 (ja) 2023-07-25

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ID=73887696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019118676A Active JP7313929B2 (ja) 2019-06-26 2019-06-26 負イオン照射装置

Country Status (5)

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US (1) US11694877B2 (https=)
JP (1) JP7313929B2 (https=)
KR (1) KR102822519B1 (https=)
CN (1) CN112144020A (https=)
TW (1) TWI757771B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7633817B2 (ja) * 2021-02-04 2025-02-20 住友重機械工業株式会社 処理装置
EP4471821A1 (de) * 2023-06-02 2024-12-04 Melec Gmbh Verfahren zum magnetronsputtern

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58100672A (ja) * 1981-12-11 1983-06-15 Toshiba Corp 薄膜形成法及びその装置
CN1169191C (zh) * 1998-06-12 2004-09-29 日新电机株式会社 注入氢负离子的方法及注入设备
FR2780601B1 (fr) * 1998-06-24 2000-07-21 Commissariat Energie Atomique Procede de depot par plasma a la resonance cyclotron electronique de couches de carbone emetteur d'electrons sous l'effet d'un champ electrique applique
JP3839616B2 (ja) * 1999-04-28 2006-11-01 株式会社アルバック 表面改質方法、有機薄膜製造方法、及び素子基板
JP3517749B2 (ja) * 1999-11-26 2004-04-12 独立行政法人産業技術総合研究所 表面改質装置
US6875700B2 (en) * 2000-08-29 2005-04-05 Board Of Regents, The University Of Texas System Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges
US9856558B2 (en) * 2008-03-14 2018-01-02 Applied Materials, Inc. Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface
JP5171683B2 (ja) * 2009-02-18 2013-03-27 東京エレクトロン株式会社 プラズマ処理方法
US8382999B2 (en) * 2009-03-26 2013-02-26 Applied Materials, Inc. Pulsed plasma high aspect ratio dielectric process
CN101586227A (zh) * 2009-06-16 2009-11-25 晶能光电（江西）有限公司 采用离子镀在生长衬底上制备氮化铝材料的方法
US8404598B2 (en) * 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
KR101214758B1 (ko) * 2010-02-26 2012-12-21 성균관대학교산학협력단 식각 방법
JP5388306B2 (ja) * 2010-04-13 2014-01-15 富士フイルム株式会社 プラズマ酸化方法及びプラズマ酸化装置
US20120000421A1 (en) * 2010-07-02 2012-01-05 Varian Semicondutor Equipment Associates, Inc. Control apparatus for plasma immersion ion implantation of a dielectric substrate
JP2014075398A (ja) * 2012-10-03 2014-04-24 Tokyo Electron Ltd プラズマ処理方法及びプラズマ処理装置
WO2015134108A1 (en) * 2014-03-04 2015-09-11 White Nicholas R Ion beam sputter deposition assembly, sputtering system, and sputter method of physical vapor deposition
JP6234860B2 (ja) * 2014-03-25 2017-11-22 株式会社Ｓｃｒｅｅｎホールディングス 成膜装置および成膜方法
JP6373160B2 (ja) * 2014-10-15 2018-08-15 東京エレクトロン株式会社 プラズマ処理装置
KR102690725B1 (ko) * 2015-07-21 2024-07-31 스미도모쥬기가이고교 가부시키가이샤 음이온생성장치
JP6584982B2 (ja) * 2015-07-21 2019-10-02 住友重機械工業株式会社 成膜装置
JP6779487B2 (ja) * 2016-12-28 2020-11-04 住友重機械工業株式会社 成膜システム、及び半導体膜の製造方法
EP3639356B1 (en) * 2017-06-12 2025-12-17 Starfire Industries, LLC Pulsed power module with pulse and ion flux control for magnetron sputtering
JP7045152B2 (ja) * 2017-08-18 2022-03-31 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
CN113574628B (zh) * 2019-03-14 2024-05-28 朗姆研究公司 用于高深宽比蚀刻的等离子体蚀刻工具

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