JP2009533551A5 - - Google Patents
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- Publication number
- JP2009533551A5 JP2009533551A5 JP2009504629A JP2009504629A JP2009533551A5 JP 2009533551 A5 JP2009533551 A5 JP 2009533551A5 JP 2009504629 A JP2009504629 A JP 2009504629A JP 2009504629 A JP2009504629 A JP 2009504629A JP 2009533551 A5 JP2009533551 A5 JP 2009533551A5
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- bias
- power supply
- substrate
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 24
- 150000002500 ions Chemical class 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 11
- 230000001939 inductive effect Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0607269A GB2437080B (en) | 2006-04-11 | 2006-04-11 | A vacuum treatment apparatus, a bias power supply and a method of operating a vacuum treatment apparatus |
| GB0607269.8 | 2006-04-11 | ||
| PCT/EP2007/003181 WO2007115819A1 (en) | 2006-04-11 | 2007-04-10 | A vacuum treatment apparatus, a bias power supply and a method of operating a vacuum treatment apparatus |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009533551A JP2009533551A (ja) | 2009-09-17 |
| JP2009533551A5 true JP2009533551A5 (https=) | 2013-05-23 |
| JP5541677B2 JP5541677B2 (ja) | 2014-07-09 |
Family
ID=36539739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009504629A Expired - Fee Related JP5541677B2 (ja) | 2006-04-11 | 2007-04-10 | 真空処理装置、バイアス電源および真空処理装置の操作方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20100025230A1 (https=) |
| EP (1) | EP2016610A1 (https=) |
| JP (1) | JP5541677B2 (https=) |
| KR (1) | KR20090007750A (https=) |
| CN (1) | CN101461032B (https=) |
| GB (1) | GB2437080B (https=) |
| WO (1) | WO2007115819A1 (https=) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE547804T1 (de) | 2007-12-24 | 2012-03-15 | Huettinger Electronic Sp Z O O | Stromänderungsbegrenzungsvorrichtung |
| DE102008057286B3 (de) | 2008-11-14 | 2010-05-20 | Systec System- Und Anlagentechnik Gmbh & Co. Kg | Verfahren und Vorrichtung zur PVD-Beschichtung mit schaltbarer Biasspannung |
| DE202010001497U1 (de) | 2010-01-29 | 2010-04-22 | Hauzer Techno-Coating B.V. | Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle |
| DE102011112434A1 (de) * | 2011-01-05 | 2012-07-05 | Oerlikon Trading Ag, Trübbach | Blitzdetektion in Beschichtungsanlagen |
| BR112013026914A2 (pt) * | 2011-04-20 | 2018-02-14 | Oerlikon Trading Ag | método de bombardeio de magnetrão de impulso de energia alta provendo ionização intensificada das partículas bombardeadas e aparelho para sua implementação |
| US8692467B2 (en) * | 2011-07-06 | 2014-04-08 | Lam Research Corporation | Synchronized and shortened master-slave RF pulsing in a plasma processing chamber |
| WO2013010990A1 (en) * | 2011-07-15 | 2013-01-24 | Hauzer Techno Coating Bv | Apparatus and method for the pretreatment and/or for the coating of an article in a vacuum chamber with a hipims power source |
| EP2587518B1 (en) | 2011-10-31 | 2018-12-19 | IHI Hauzer Techno Coating B.V. | Apparatus and Method for depositing Hydrogen-free ta C Layers on Workpieces and Workpiece |
| CN102548172B (zh) * | 2011-12-19 | 2015-04-08 | 北京卫星环境工程研究所 | 星用太阳电池阵的静电放电防护处理方法 |
| EP2628817B1 (en) * | 2012-02-15 | 2016-11-02 | IHI Hauzer Techno Coating B.V. | A coated article of martensitic steel and a method of forming a coated article of steel |
| EP2628822B1 (en) | 2012-02-15 | 2015-05-20 | IHI Hauzer Techno Coating B.V. | Current insulated bearing components and bearings |
| EP2963145B1 (en) | 2014-06-30 | 2018-01-31 | IHI Hauzer Techno Coating B.V. | Coating and method for its deposition to operate in boundary lubrication conditions and at elevated temperatures |
| TWI670749B (zh) | 2015-03-13 | 2019-09-01 | 美商應用材料股份有限公司 | 耦接至工藝腔室的電漿源 |
| WO2017003339A1 (en) * | 2015-07-02 | 2017-01-05 | Styervoyedov Mykola | Pulse generation device and method for a magnetron sputtering system |
| DE102015119455B3 (de) * | 2015-11-11 | 2016-11-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung zum Unterdrücken von Arcs in einem Elektronenstrahlerzeuger |
| DE102017202339B3 (de) * | 2017-02-14 | 2018-05-24 | Carl Zeiss Microscopy Gmbh | Strahlsystem mit geladenen Teilchen und Verfahren dafür |
| US11453941B2 (en) * | 2017-02-28 | 2022-09-27 | City University Of Hong Kong | Cerium oxide coating, its preparation and use |
| US10510575B2 (en) | 2017-09-20 | 2019-12-17 | Applied Materials, Inc. | Substrate support with multiple embedded electrodes |
| US10555412B2 (en) | 2018-05-10 | 2020-02-04 | Applied Materials, Inc. | Method of controlling ion energy distribution using a pulse generator with a current-return output stage |
| US11476145B2 (en) | 2018-11-20 | 2022-10-18 | Applied Materials, Inc. | Automatic ESC bias compensation when using pulsed DC bias |
| JP7451540B2 (ja) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
| US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
| US11462389B2 (en) | 2020-07-31 | 2022-10-04 | Applied Materials, Inc. | Pulsed-voltage hardware assembly for use in a plasma processing system |
| US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
| US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
| US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
| US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
| US12148595B2 (en) | 2021-06-09 | 2024-11-19 | Applied Materials, Inc. | Plasma uniformity control in pulsed DC plasma chamber |
| US12525433B2 (en) | 2021-06-09 | 2026-01-13 | Applied Materials, Inc. | Method and apparatus to reduce feature charging in plasma processing chamber |
| US12525441B2 (en) | 2021-06-09 | 2026-01-13 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
| US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
| US11569066B2 (en) | 2021-06-23 | 2023-01-31 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US11776788B2 (en) | 2021-06-28 | 2023-10-03 | Applied Materials, Inc. | Pulsed voltage boost for substrate processing |
| CN113564540B (zh) * | 2021-07-30 | 2023-10-03 | 江苏徐工工程机械研究院有限公司 | 电弧离子镀膜装置及镀膜方法 |
| CN113684463B (zh) * | 2021-08-19 | 2023-08-01 | 北京北方华创真空技术有限公司 | 一种平板连续pvd设备及其载板偏压导入装置 |
| US11476090B1 (en) | 2021-08-24 | 2022-10-18 | Applied Materials, Inc. | Voltage pulse time-domain multiplexing |
| US12106938B2 (en) | 2021-09-14 | 2024-10-01 | Applied Materials, Inc. | Distortion current mitigation in a radio frequency plasma processing chamber |
| US11694876B2 (en) | 2021-12-08 | 2023-07-04 | Applied Materials, Inc. | Apparatus and method for delivering a plurality of waveform signals during plasma processing |
| US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
| US12315732B2 (en) | 2022-06-10 | 2025-05-27 | Applied Materials, Inc. | Method and apparatus for etching a semiconductor substrate in a plasma etch chamber |
| US12586768B2 (en) | 2022-08-10 | 2026-03-24 | Applied Materials, Inc. | Pulsed voltage compensation for plasma processing applications |
| US12272524B2 (en) | 2022-09-19 | 2025-04-08 | Applied Materials, Inc. | Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics |
| US12111341B2 (en) | 2022-10-05 | 2024-10-08 | Applied Materials, Inc. | In-situ electric field detection method and apparatus |
| CN117089806B (zh) * | 2023-08-22 | 2025-10-10 | 江苏徐工工程机械研究院有限公司 | 镀膜装置及镀膜方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4043889A (en) * | 1976-01-02 | 1977-08-23 | Sperry Rand Corporation | Method of and apparatus for the radio frequency sputtering of a thin film |
| JPS6130665A (ja) * | 1984-07-20 | 1986-02-12 | Anelva Corp | スパツタ装置 |
| US5298136A (en) * | 1987-08-18 | 1994-03-29 | Regents Of The University Of Minnesota | Steered arc coating with thick targets |
| US4963239A (en) * | 1988-01-29 | 1990-10-16 | Hitachi, Ltd. | Sputtering process and an apparatus for carrying out the same |
| FR2699934B1 (fr) * | 1992-12-30 | 1995-03-17 | Lorraine Inst Nat Polytech | Procédé de contrôle de la concentration en métalloïde d'un dépôt réalisés par voie physique en phase vapeur réactive à l'aide d'un plasma froid de pulvérisation. |
| US5494522A (en) * | 1993-03-17 | 1996-02-27 | Tokyo Electron Limited | Plasma process system and method |
| JP3060876B2 (ja) * | 1995-02-15 | 2000-07-10 | 日新電機株式会社 | 金属イオン注入装置 |
| JPH1079372A (ja) * | 1996-09-03 | 1998-03-24 | Matsushita Electric Ind Co Ltd | プラズマ処理方法及びプラズマ処理装置 |
| DE19725930C2 (de) * | 1997-06-16 | 2002-07-18 | Eberhard Moll Gmbh Dr | Verfahren und Anlage zum Behandeln von Substraten mittels Ionen aus einer Niedervoltbogenentladung |
| JP4351755B2 (ja) * | 1999-03-12 | 2009-10-28 | キヤノンアネルバ株式会社 | 薄膜作成方法および薄膜作成装置 |
| US6193855B1 (en) * | 1999-10-19 | 2001-02-27 | Applied Materials, Inc. | Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage |
| IL134255A0 (en) * | 2000-01-27 | 2001-04-30 | V I P Vacuum Ion Plasma Techno | System and method for deposition of coatings on a substrate |
| US6808607B2 (en) * | 2002-09-25 | 2004-10-26 | Advanced Energy Industries, Inc. | High peak power plasma pulsed supply with arc handling |
| US7147759B2 (en) * | 2002-09-30 | 2006-12-12 | Zond, Inc. | High-power pulsed magnetron sputtering |
| US20040112735A1 (en) * | 2002-12-17 | 2004-06-17 | Applied Materials, Inc. | Pulsed magnetron for sputter deposition |
| JP2004214487A (ja) * | 2003-01-07 | 2004-07-29 | Shin Meiwa Ind Co Ltd | 成膜方法及び装置 |
| SE0302045D0 (sv) * | 2003-07-10 | 2003-07-10 | Chemfilt R & D Ab | Work piece processing by pulsed electric discharges in solid-gas plasmas |
| WO2005005648A1 (ja) | 2003-07-11 | 2005-01-20 | Mitsubishi Pharma Corporation | 新規な光学活性カルボン酸の製造法 |
| US9997338B2 (en) * | 2005-03-24 | 2018-06-12 | Oerlikon Surface Solutions Ag, Pfäffikon | Method for operating a pulsed arc source |
-
2006
- 2006-04-11 GB GB0607269A patent/GB2437080B/en not_active Expired - Fee Related
-
2007
- 2007-04-10 KR KR1020087027504A patent/KR20090007750A/ko not_active Ceased
- 2007-04-10 US US12/296,897 patent/US20100025230A1/en not_active Abandoned
- 2007-04-10 CN CN2007800129909A patent/CN101461032B/zh not_active Expired - Fee Related
- 2007-04-10 JP JP2009504629A patent/JP5541677B2/ja not_active Expired - Fee Related
- 2007-04-10 WO PCT/EP2007/003181 patent/WO2007115819A1/en not_active Ceased
- 2007-04-10 EP EP07724122A patent/EP2016610A1/en not_active Ceased
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