JP2014107363A5 - - Google Patents

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Publication number
JP2014107363A5
JP2014107363A5 JP2012258086A JP2012258086A JP2014107363A5 JP 2014107363 A5 JP2014107363 A5 JP 2014107363A5 JP 2012258086 A JP2012258086 A JP 2012258086A JP 2012258086 A JP2012258086 A JP 2012258086A JP 2014107363 A5 JP2014107363 A5 JP 2014107363A5
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JP
Japan
Prior art keywords
pulse
frequency
plasma processing
period
frequency power
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JP2012258086A
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English (en)
Japanese (ja)
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JP2014107363A (ja
JP6002556B2 (ja
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Priority claimed from JP2012258086A external-priority patent/JP6002556B2/ja
Priority to JP2012258086A priority Critical patent/JP6002556B2/ja
Application filed filed Critical
Priority to TW101148068A priority patent/TWI508168B/zh
Priority to KR1020130007790A priority patent/KR101425307B1/ko
Priority to US13/749,784 priority patent/US8992724B2/en
Publication of JP2014107363A publication Critical patent/JP2014107363A/ja
Priority to US14/609,807 priority patent/US9502217B2/en
Publication of JP2014107363A5 publication Critical patent/JP2014107363A5/ja
Publication of JP6002556B2 publication Critical patent/JP6002556B2/ja
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JP2012258086A 2012-11-27 2012-11-27 プラズマ処理装置およびプラズマ処理方法 Active JP6002556B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012258086A JP6002556B2 (ja) 2012-11-27 2012-11-27 プラズマ処理装置およびプラズマ処理方法
TW101148068A TWI508168B (zh) 2012-11-27 2012-12-18 Plasma processing device and plasma processing method
KR1020130007790A KR101425307B1 (ko) 2012-11-27 2013-01-24 플라즈마 처리 장치 및 플라즈마 처리 방법
US13/749,784 US8992724B2 (en) 2012-11-27 2013-01-25 Plasma processing apparatus and plasma processing method
US14/609,807 US9502217B2 (en) 2012-11-27 2015-01-30 Plasma processing apparatus and plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012258086A JP6002556B2 (ja) 2012-11-27 2012-11-27 プラズマ処理装置およびプラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2014107363A JP2014107363A (ja) 2014-06-09
JP2014107363A5 true JP2014107363A5 (https=) 2015-08-13
JP6002556B2 JP6002556B2 (ja) 2016-10-05

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ID=50773663

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JP2012258086A Active JP6002556B2 (ja) 2012-11-27 2012-11-27 プラズマ処理装置およびプラズマ処理方法

Country Status (4)

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US (2) US8992724B2 (https=)
JP (1) JP6002556B2 (https=)
KR (1) KR101425307B1 (https=)
TW (1) TWI508168B (https=)

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CN107295739A (zh) * 2016-04-12 2017-10-24 北京北方华创微电子装备有限公司 产生脉冲等离子体的方法及其等离子体设备
US10340123B2 (en) * 2016-05-26 2019-07-02 Tokyo Electron Limited Multi-frequency power modulation for etching high aspect ratio features
CN107172818B (zh) * 2017-07-12 2023-06-16 信丰迅捷兴电路科技有限公司 一种全自动的蚀刻装置及其控制方法
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JP7289313B2 (ja) 2017-11-17 2023-06-09 エーイーエス グローバル ホールディングス， プライベート リミテッド プラズマ処理のためのイオンバイアス電圧の空間的および時間的制御
WO2019099870A1 (en) 2017-11-17 2019-05-23 Advanced Energy Industries, Inc. Synchronized pulsing of plasma processing source and substrate bias
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
JP6792754B2 (ja) * 2018-11-14 2020-12-02 株式会社エスイー プラズマを用いた処理装置及び処理対象物にプラズマを照射する処理を行う処理方法
KR102743927B1 (ko) 2019-01-10 2024-12-17 삼성전자주식회사 플라즈마 균일성 제어 방법 및 플라즈마 프로세싱 시스템
US10593518B1 (en) * 2019-02-08 2020-03-17 Applied Materials, Inc. Methods and apparatus for etching semiconductor structures
CN111916327B (zh) * 2019-05-10 2023-04-28 中微半导体设备(上海)股份有限公司 多频率多阶段的等离子体射频输出的方法及其装置
TW202536923A (zh) 2019-07-12 2025-09-16 新加坡商Aes 全球公司 具有控制開關之偏壓供應器
KR102886124B1 (ko) 2019-07-29 2025-11-14 에이이에스 글로벌 홀딩스 피티이 리미티드 다수의 부하의 펄스 구동을 위한 채널 오프셋을 갖는 멀티플렉싱된 전력 발생기 출력
KR20220113502A (ko) * 2019-12-13 2022-08-12 램 리써치 코포레이션 보우 제어와 마스크 선택도 사이의 균형 (balance) 을 달성하기 위한 멀티-상태 펄싱 (multi-state pulsing)
JP7511423B2 (ja) * 2019-12-17 2024-07-05 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法、及び電源システム
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JP6002556B2 (ja) * 2012-11-27 2016-10-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法

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