TWI508168B - Plasma processing device and plasma processing method - Google Patents
Plasma processing device and plasma processing method Download PDFInfo
- Publication number
- TWI508168B TWI508168B TW101148068A TW101148068A TWI508168B TW I508168 B TWI508168 B TW I508168B TW 101148068 A TW101148068 A TW 101148068A TW 101148068 A TW101148068 A TW 101148068A TW I508168 B TWI508168 B TW I508168B
- Authority
- TW
- Taiwan
- Prior art keywords
- pulse
- frequency
- plasma
- period
- plasma processing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32311—Circuits specially adapted for controlling the microwave discharge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32302—Plural frequencies
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
- H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012258086A JP6002556B2 (ja) | 2012-11-27 | 2012-11-27 | プラズマ処理装置およびプラズマ処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201421569A TW201421569A (zh) | 2014-06-01 |
| TWI508168B true TWI508168B (zh) | 2015-11-11 |
Family
ID=50773663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101148068A TWI508168B (zh) | 2012-11-27 | 2012-12-18 | Plasma processing device and plasma processing method |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8992724B2 (https=) |
| JP (1) | JP6002556B2 (https=) |
| KR (1) | KR101425307B1 (https=) |
| TW (1) | TWI508168B (https=) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| JP6002556B2 (ja) * | 2012-11-27 | 2016-10-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
| JP6315809B2 (ja) | 2014-08-28 | 2018-04-25 | 東京エレクトロン株式会社 | エッチング方法 |
| US9666447B2 (en) | 2014-10-28 | 2017-05-30 | Tokyo Electron Limited | Method for selectivity enhancement during dry plasma etching |
| WO2016104098A1 (ja) * | 2014-12-25 | 2016-06-30 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
| US10153133B2 (en) * | 2015-03-23 | 2018-12-11 | Applied Materials, Inc. | Plasma reactor having digital control over rotation frequency of a microwave field with direct up-conversion |
| JP6424120B2 (ja) * | 2015-03-23 | 2018-11-14 | 東京エレクトロン株式会社 | 電源システム、プラズマ処理装置及び電源制御方法 |
| JP6670692B2 (ja) * | 2015-09-29 | 2020-03-25 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
| CN107295739A (zh) * | 2016-04-12 | 2017-10-24 | 北京北方华创微电子装备有限公司 | 产生脉冲等离子体的方法及其等离子体设备 |
| US10340123B2 (en) * | 2016-05-26 | 2019-07-02 | Tokyo Electron Limited | Multi-frequency power modulation for etching high aspect ratio features |
| CN107172818B (zh) * | 2017-07-12 | 2023-06-16 | 信丰迅捷兴电路科技有限公司 | 一种全自动的蚀刻装置及其控制方法 |
| KR102435263B1 (ko) * | 2017-07-25 | 2022-08-23 | 삼성전자주식회사 | 플라즈마 처리 장치 및 방법, 및 이를 이용한 반도체 장치의 제조 방법 |
| CN111788654B (zh) | 2017-11-17 | 2023-04-14 | 先进工程解决方案全球控股私人有限公司 | 等离子体处理系统中的调制电源的改进应用 |
| US11437221B2 (en) | 2017-11-17 | 2022-09-06 | Advanced Energy Industries, Inc. | Spatial monitoring and control of plasma processing environments |
| US12505986B2 (en) | 2017-11-17 | 2025-12-23 | Advanced Energy Industries, Inc. | Synchronization of plasma processing components |
| WO2019099925A1 (en) | 2017-11-17 | 2019-05-23 | Advanced Energy Industries, Inc. | Spatial and temporal control of ion bias voltage for plasma processing |
| EP3711080B1 (en) | 2017-11-17 | 2023-06-21 | AES Global Holdings, Pte. Ltd. | Synchronized pulsing of plasma processing source and substrate bias |
| US12230476B2 (en) | 2017-11-17 | 2025-02-18 | Advanced Energy Industries, Inc. | Integrated control of a plasma processing system |
| JP6792754B2 (ja) * | 2018-11-14 | 2020-12-02 | 株式会社エスイー | プラズマを用いた処理装置及び処理対象物にプラズマを照射する処理を行う処理方法 |
| KR102743927B1 (ko) | 2019-01-10 | 2024-12-17 | 삼성전자주식회사 | 플라즈마 균일성 제어 방법 및 플라즈마 프로세싱 시스템 |
| US10593518B1 (en) * | 2019-02-08 | 2020-03-17 | Applied Materials, Inc. | Methods and apparatus for etching semiconductor structures |
| CN111916327B (zh) * | 2019-05-10 | 2023-04-28 | 中微半导体设备(上海)股份有限公司 | 多频率多阶段的等离子体射频输出的方法及其装置 |
| WO2021011450A1 (en) | 2019-07-12 | 2021-01-21 | Advanced Energy Industries, Inc. | Bias supply with a single controlled switch |
| US11239056B2 (en) | 2019-07-29 | 2022-02-01 | Advanced Energy Industries, Inc. | Multiplexed power generator output with channel offsets for pulsed driving of multiple loads |
| WO2021118862A2 (en) * | 2019-12-13 | 2021-06-17 | Lam Research Corporation | Multi-state pulsing for achieving a balance between bow control and mask selectivity |
| JP7511423B2 (ja) * | 2019-12-17 | 2024-07-05 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ処理方法、及び電源システム |
| US12125674B2 (en) | 2020-05-11 | 2024-10-22 | Advanced Energy Industries, Inc. | Surface charge and power feedback and control using a switch mode bias system |
| US12609283B2 (en) | 2020-06-15 | 2026-04-21 | Lam Research Corporation | Control of pulsing frequencies and duty cycles of parameters of RF signals |
| TWI902936B (zh) * | 2020-10-28 | 2025-11-01 | 日商東京威力科創股份有限公司 | 電漿處理裝置 |
| JP7739425B2 (ja) * | 2021-06-08 | 2025-09-16 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| WO2023238235A1 (ja) * | 2022-06-07 | 2023-12-14 | 株式会社日立ハイテク | プラズマ処理装置 |
| KR102916926B1 (ko) * | 2022-07-25 | 2026-01-23 | 주식회사 히타치하이테크 | 플라스마 처리 방법 |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
| US12567572B2 (en) | 2023-07-11 | 2026-03-03 | Advanced Energy Industries, Inc. | Plasma behaviors predicted by current measurements during asymmetric bias waveform application |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120052689A1 (en) * | 2010-09-01 | 2012-03-01 | Samsung Electronics Co., Ltd. | Plasma etching method and apparatus thereof |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3424182B2 (ja) * | 1994-09-13 | 2003-07-07 | アネルバ株式会社 | 表面処理装置 |
| JPH08250479A (ja) | 1995-03-15 | 1996-09-27 | Hitachi Ltd | 表面処理方法及び表面処理装置 |
| JP2001085394A (ja) | 1999-09-10 | 2001-03-30 | Hitachi Ltd | 表面処理方法および表面処理装置 |
| US7744735B2 (en) * | 2001-05-04 | 2010-06-29 | Tokyo Electron Limited | Ionized PVD with sequential deposition and etching |
| DE10309711A1 (de) | 2001-09-14 | 2004-09-16 | Robert Bosch Gmbh | Verfahren zum Einätzen von Strukturen in einem Ätzkörper mit einem Plasma |
| JP5192209B2 (ja) * | 2006-10-06 | 2013-05-08 | 東京エレクトロン株式会社 | プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体 |
| US9123509B2 (en) * | 2007-06-29 | 2015-09-01 | Varian Semiconductor Equipment Associates, Inc. | Techniques for plasma processing a substrate |
| KR101510775B1 (ko) * | 2008-11-24 | 2015-04-10 | 삼성전자주식회사 | 동기식 펄스 플라즈마 에칭 장비 |
| US8382999B2 (en) * | 2009-03-26 | 2013-02-26 | Applied Materials, Inc. | Pulsed plasma high aspect ratio dielectric process |
| JP5395491B2 (ja) * | 2009-03-31 | 2014-01-22 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| US8404598B2 (en) * | 2009-08-07 | 2013-03-26 | Applied Materials, Inc. | Synchronized radio frequency pulsing for plasma etching |
| JP6002556B2 (ja) * | 2012-11-27 | 2016-10-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
-
2012
- 2012-11-27 JP JP2012258086A patent/JP6002556B2/ja active Active
- 2012-12-18 TW TW101148068A patent/TWI508168B/zh active
-
2013
- 2013-01-24 KR KR1020130007790A patent/KR101425307B1/ko active Active
- 2013-01-25 US US13/749,784 patent/US8992724B2/en active Active
-
2015
- 2015-01-30 US US14/609,807 patent/US9502217B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120052689A1 (en) * | 2010-09-01 | 2012-03-01 | Samsung Electronics Co., Ltd. | Plasma etching method and apparatus thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140067870A (ko) | 2014-06-05 |
| KR101425307B1 (ko) | 2014-08-01 |
| US9502217B2 (en) | 2016-11-22 |
| US8992724B2 (en) | 2015-03-31 |
| US20140148016A1 (en) | 2014-05-29 |
| JP6002556B2 (ja) | 2016-10-05 |
| JP2014107363A (ja) | 2014-06-09 |
| US20150144594A1 (en) | 2015-05-28 |
| TW201421569A (zh) | 2014-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI508168B (zh) | Plasma processing device and plasma processing method | |
| KR102124407B1 (ko) | 플라스마 처리 방법 및 플라스마 처리 장치 | |
| US20230317412A1 (en) | Pulsed plasma chamber in dual chamber configuration | |
| CN104103486B (zh) | 等离子体处理方法以及等离子体处理装置 | |
| TWI604498B (zh) | Plasma processing apparatus and plasma processing method | |
| CN103703870B (zh) | 用于介电蚀刻的阴离子控制 | |
| CN101499399B (zh) | 衬底等离子体处理设备和等离子体处理方法 | |
| JP6298867B2 (ja) | プラズマ処理方法およびプラズマ処理装置 | |
| CN114207785B (zh) | 用于处理基板的方法与设备 | |
| JP6180890B2 (ja) | プラズマ処理方法 | |
| US12237149B2 (en) | Reducing aspect ratio dependent etch with direct current bias pulsing | |
| US20250166966A1 (en) | Plasma processing with phase-locked waveforms | |
| WO2023211665A1 (en) | Method to enhance etch rate and improve critical dimension of features and mask selectivity | |
| US20240105424A1 (en) | Plasma processing apparatus and plasma processing method |