TW201832620A - 在電漿反應器中用於可調節工件偏壓之系統 - Google Patents

在電漿反應器中用於可調節工件偏壓之系統 Download PDF

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Publication number
TW201832620A
TW201832620A TW107103368A TW107103368A TW201832620A TW 201832620 A TW201832620 A TW 201832620A TW 107103368 A TW107103368 A TW 107103368A TW 107103368 A TW107103368 A TW 107103368A TW 201832620 A TW201832620 A TW 201832620A
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TW
Taiwan
Prior art keywords
pulse
workpiece
voltage source
pulse voltage
source
Prior art date
Application number
TW107103368A
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English (en)
Chinese (zh)
Inventor
特拉維斯 高
菲利浦亞倫 克勞司
雷歐尼德 朵夫
帕布 古柏羅吉
Original Assignee
美商應用材料股份有限公司
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Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201832620A publication Critical patent/TW201832620A/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32045—Circuits specially adapted for controlling the glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW107103368A 2017-02-03 2018-01-31 在電漿反應器中用於可調節工件偏壓之系統 TW201832620A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/424,405 2017-02-03
US15/424,405 US10373804B2 (en) 2017-02-03 2017-02-03 System for tunable workpiece biasing in a plasma reactor

Publications (1)

Publication Number Publication Date
TW201832620A true TW201832620A (zh) 2018-09-01

Family

ID=63037325

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107103368A TW201832620A (zh) 2017-02-03 2018-01-31 在電漿反應器中用於可調節工件偏壓之系統

Country Status (6)

Country Link
US (3) US10373804B2 (https=)
JP (1) JP2020507678A (https=)
KR (1) KR20190105243A (https=)
CN (1) CN110249407A (https=)
TW (1) TW201832620A (https=)
WO (1) WO2018144374A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
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US11955314B2 (en) 2019-01-09 2024-04-09 Tokyo Electron Limited Plasma processing apparatus
TWI868096B (zh) * 2019-01-09 2025-01-01 日商東京威力科創股份有限公司 電漿處理裝置
TWI923999B (zh) 2019-01-09 2026-05-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法

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Publication number Priority date Publication date Assignee Title
US11955314B2 (en) 2019-01-09 2024-04-09 Tokyo Electron Limited Plasma processing apparatus
TWI868096B (zh) * 2019-01-09 2025-01-01 日商東京威力科創股份有限公司 電漿處理裝置
TWI923999B (zh) 2019-01-09 2026-05-01 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法

Also Published As

Publication number Publication date
JP2020507678A (ja) 2020-03-12
US10923320B2 (en) 2021-02-16
US20210134561A1 (en) 2021-05-06
KR20190105243A (ko) 2019-09-16
US10373804B2 (en) 2019-08-06
US20180226225A1 (en) 2018-08-09
WO2018144374A1 (en) 2018-08-09
US20190348258A1 (en) 2019-11-14
CN110249407A (zh) 2019-09-17

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