KR20190105243A - 플라즈마 반응기에서의 튜닝가능한 워크피스 바이어싱을 위한 시스템 - Google Patents

플라즈마 반응기에서의 튜닝가능한 워크피스 바이어싱을 위한 시스템 Download PDF

Info

Publication number
KR20190105243A
KR20190105243A KR1020197025615A KR20197025615A KR20190105243A KR 20190105243 A KR20190105243 A KR 20190105243A KR 1020197025615 A KR1020197025615 A KR 1020197025615A KR 20197025615 A KR20197025615 A KR 20197025615A KR 20190105243 A KR20190105243 A KR 20190105243A
Authority
KR
South Korea
Prior art keywords
workpiece
voltage source
biasing
pulsed voltage
pulsed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020197025615A
Other languages
English (en)
Korean (ko)
Inventor
트래비스 코
필립 앨런 크라우스
레오니드 도프
프라부 고팔라자
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20190105243A publication Critical patent/KR20190105243A/ko
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32045—Circuits specially adapted for controlling the glow discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020197025615A 2017-02-03 2018-01-29 플라즈마 반응기에서의 튜닝가능한 워크피스 바이어싱을 위한 시스템 Abandoned KR20190105243A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/424,405 2017-02-03
US15/424,405 US10373804B2 (en) 2017-02-03 2017-02-03 System for tunable workpiece biasing in a plasma reactor
PCT/US2018/015688 WO2018144374A1 (en) 2017-02-03 2018-01-29 System for tunable workpiece biasing in a plasma reactor

Publications (1)

Publication Number Publication Date
KR20190105243A true KR20190105243A (ko) 2019-09-16

Family

ID=63037325

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197025615A Abandoned KR20190105243A (ko) 2017-02-03 2018-01-29 플라즈마 반응기에서의 튜닝가능한 워크피스 바이어싱을 위한 시스템

Country Status (6)

Country Link
US (3) US10373804B2 (https=)
JP (1) JP2020507678A (https=)
KR (1) KR20190105243A (https=)
CN (1) CN110249407A (https=)
TW (1) TW201832620A (https=)
WO (1) WO2018144374A1 (https=)

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US10892140B2 (en) 2018-07-27 2021-01-12 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10978955B2 (en) 2014-02-28 2021-04-13 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US11539352B2 (en) 2013-11-14 2022-12-27 Eagle Harbor Technologies, Inc. Transformer resonant converter
WO2015073921A1 (en) 2013-11-14 2015-05-21 Eagle Harbor Technologies, Inc. This disclosure relates generally to a high voltage nanosecond pulser.
US10020800B2 (en) 2013-11-14 2018-07-10 Eagle Harbor Technologies, Inc. High voltage nanosecond pulser with variable pulse width and pulse repetition frequency
US10483089B2 (en) 2014-02-28 2019-11-19 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
US10903047B2 (en) 2018-07-27 2021-01-26 Eagle Harbor Technologies, Inc. Precise plasma control system
US11824454B2 (en) * 2016-06-21 2023-11-21 Eagle Harbor Technologies, Inc. Wafer biasing in a plasma chamber
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US10373804B2 (en) * 2017-02-03 2019-08-06 Applied Materials, Inc. System for tunable workpiece biasing in a plasma reactor
CN110692188B (zh) 2017-02-07 2022-09-09 鹰港科技有限公司 变压器谐振转换器
CN111264032B (zh) 2017-08-25 2022-08-19 鹰港科技有限公司 使用纳秒脉冲的任意波形生成
US20190088518A1 (en) * 2017-09-20 2019-03-21 Applied Materials, Inc. Substrate support with cooled and conducting pins
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
WO2019099925A1 (en) 2017-11-17 2019-05-23 Advanced Energy Industries, Inc. Spatial and temporal control of ion bias voltage for plasma processing
CN111788654B (zh) 2017-11-17 2023-04-14 先进工程解决方案全球控股私人有限公司 等离子体处理系统中的调制电源的改进应用
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
EP3711080B1 (en) 2017-11-17 2023-06-21 AES Global Holdings, Pte. Ltd. Synchronized pulsing of plasma processing source and substrate bias
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
US10607814B2 (en) 2018-08-10 2020-03-31 Eagle Harbor Technologies, Inc. High voltage switch with isolated power
US11302518B2 (en) 2018-07-27 2022-04-12 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
US11222767B2 (en) 2018-07-27 2022-01-11 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US11810761B2 (en) 2018-07-27 2023-11-07 Eagle Harbor Technologies, Inc. Nanosecond pulser ADC system
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
EP3834285B1 (en) 2018-08-10 2024-12-25 Eagle Harbor Technologies, Inc. Plasma sheath control for rf plasma reactors
US10991550B2 (en) * 2018-09-04 2021-04-27 Lam Research Corporation Modular recipe controlled calibration (MRCC) apparatus used to balance plasma in multiple station system
US10703654B2 (en) * 2018-11-07 2020-07-07 Pear Labs Llc Non-thermal multiple plasma gate devices
US11476145B2 (en) 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
US12456604B2 (en) 2019-12-24 2025-10-28 Eagle Harbor Technologies, Inc. Nanosecond pulser RF isolation for plasma systems
JP7320608B2 (ja) 2019-01-08 2023-08-03 イーグル ハーバー テクノロジーズ，インク． ナノ秒パルサー回路での効率的なエネルギー回収
JP7297795B2 (ja) * 2019-01-09 2023-06-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP7406965B2 (ja) * 2019-01-09 2023-12-28 東京エレクトロン株式会社 プラズマ処理装置
US11955314B2 (en) 2019-01-09 2024-04-09 Tokyo Electron Limited Plasma processing apparatus
KR102744694B1 (ko) * 2019-01-10 2024-12-19 삼성전자주식회사 플라즈마 처리 방법 및 플라즈마 처리 장치
JP7451540B2 (ja) 2019-01-22 2024-03-18 アプライド マテリアルズ インコーポレイテッド パルス状電圧波形を制御するためのフィードバックループ
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
NL2022999B1 (en) * 2019-04-24 2020-11-02 Prodrive Tech Bv Voltage waveform generator for plasma processing apparatuses
US11488796B2 (en) * 2019-04-24 2022-11-01 Applied Materials, Inc. Thermal break for high-frequency antennae
WO2021011450A1 (en) 2019-07-12 2021-01-21 Advanced Energy Industries, Inc. Bias supply with a single controlled switch
JP7474651B2 (ja) * 2019-09-09 2024-04-25 東京エレクトロン株式会社 プラズマ処理装置
US11043387B2 (en) 2019-10-30 2021-06-22 Applied Materials, Inc. Methods and apparatus for processing a substrate
TWI778449B (zh) 2019-11-15 2022-09-21 美商鷹港科技股份有限公司 高電壓脈衝電路
KR20230150396A (ko) 2019-12-24 2023-10-30 이글 하버 테크놀로지스, 인코포레이티드 플라즈마 시스템을 위한 나노초 펄서 rf 절연
CN110936596A (zh) * 2019-12-27 2020-03-31 河南先途智能科技有限公司 低温等离子技术处理鞋材表面的工艺方法
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
US11967484B2 (en) 2020-07-09 2024-04-23 Eagle Harbor Technologies, Inc. Ion current droop compensation
US11462389B2 (en) 2020-07-31 2022-10-04 Applied Materials, Inc. Pulsed-voltage hardware assembly for use in a plasma processing system
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US12525441B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US12525433B2 (en) 2021-06-09 2026-01-13 Applied Materials, Inc. Method and apparatus to reduce feature charging in plasma processing chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) * 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
WO2023069633A1 (en) * 2021-10-21 2023-04-27 Applied Materials, Inc. Plasma processing chambers configured for tunable substrate and edge sheath control
US11664195B1 (en) 2021-11-11 2023-05-30 Velvetch Llc DC plasma control for electron enhanced material processing
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11688588B1 (en) * 2022-02-09 2023-06-27 Velvetch Llc Electron bias control signals for electron enhanced material processing
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US11824542B1 (en) 2022-06-29 2023-11-21 Eagle Harbor Technologies, Inc. Bipolar high voltage pulser
CN115159865B (zh) * 2022-07-26 2023-05-09 艾瑞森表面技术（苏州）股份有限公司 一种防眩光的表面处理方法
US12586768B2 (en) 2022-08-10 2026-03-24 Applied Materials, Inc. Pulsed voltage compensation for plasma processing applications
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US20240096594A1 (en) * 2022-09-19 2024-03-21 Adaptive Plasma Technology Corp. System for etching with a plasma
JP7833099B2 (ja) 2022-09-29 2026-03-18 イーグル ハーバー テクノロジーズ，インク． 高電圧プラズマ制御
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus
US11869747B1 (en) 2023-01-04 2024-01-09 Velvetch Llc Atomic layer etching by electron wavefront
KR20240121029A (ko) 2023-02-01 2024-08-08 삼성전자주식회사 기판 처리 장치 및 이를 이용한 기판 처리 방법
US20240347323A1 (en) * 2023-04-14 2024-10-17 Velvetch Llc Composite stage for electron enhanced material processing
US12567572B2 (en) 2023-07-11 2026-03-03 Advanced Energy Industries, Inc. Plasma behaviors predicted by current measurements during asymmetric bias waveform application
JP7508758B1 (ja) 2024-02-08 2024-07-02 京都電機器株式会社 プラズマエッチング装置用パルス電源装置及びパルス電圧生成方法
KR102691602B1 (ko) * 2024-03-22 2024-08-05 브이엠 주식회사 기판 손상 감소 구조의 원자층 식각 장치

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4013271B2 (ja) * 1997-01-16 2007-11-28 日新電機株式会社 物品表面処理方法及び装置
US6287435B1 (en) * 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
WO2002073654A1 (en) * 2001-03-13 2002-09-19 Applied Materials, Inc. Plasma chamber support having dual electrodes
US6597117B2 (en) * 2001-11-30 2003-07-22 Samsung Austin Semiconductor, L.P. Plasma coil
JP4701691B2 (ja) * 2004-11-29 2011-06-15 東京エレクトロン株式会社 エッチング方法
JP4753306B2 (ja) * 2006-03-29 2011-08-24 東京エレクトロン株式会社 プラズマ処理装置
US7780864B2 (en) 2006-04-24 2010-08-24 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution
JP5224837B2 (ja) * 2008-02-01 2013-07-03 株式会社東芝 基板のプラズマ処理装置及びプラズマ処理方法
US8382999B2 (en) 2009-03-26 2013-02-26 Applied Materials, Inc. Pulsed plasma high aspect ratio dielectric process
JP5496568B2 (ja) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US8404598B2 (en) 2009-08-07 2013-03-26 Applied Materials, Inc. Synchronized radio frequency pulsing for plasma etching
JP2012044045A (ja) * 2010-08-20 2012-03-01 Toshiba Corp 制御装置、プラズマ処理装置、及び制御方法
US8232193B2 (en) * 2010-07-08 2012-07-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming Cu pillar capped by barrier layer
KR20120022251A (ko) * 2010-09-01 2012-03-12 삼성전자주식회사 플라즈마 식각방법 및 그의 장치
JP5172928B2 (ja) * 2010-09-30 2013-03-27 株式会社東芝 基板処理方法および基板処理装置
JP6212363B2 (ja) * 2012-11-19 2017-10-11 太陽誘電ケミカルテクノロジー株式会社 構造体及びその製造方法
US9460894B2 (en) 2013-06-28 2016-10-04 Lam Research Corporation Controlling ion energy within a plasma chamber
JP5701958B2 (ja) * 2013-10-15 2015-04-15 東京エレクトロン株式会社 基板処理装置
KR20160022458A (ko) 2014-08-19 2016-03-02 삼성전자주식회사 플라즈마 장비 및 이의 동작 방법
US9536749B2 (en) * 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
CN106343984A (zh) * 2015-07-17 2017-01-25 松下知识产权经营株式会社 注意信息提示装置和注意信息提示方法
KR102744988B1 (ko) * 2015-11-16 2024-12-19 도쿄엘렉트론가부시키가이샤 제1 물질과 제2 물질을 가진 구조 패턴 층의 에칭 방법
US9966231B2 (en) 2016-02-29 2018-05-08 Lam Research Corporation Direct current pulsing plasma systems
US10373804B2 (en) * 2017-02-03 2019-08-06 Applied Materials, Inc. System for tunable workpiece biasing in a plasma reactor

Also Published As

Publication number Publication date
JP2020507678A (ja) 2020-03-12
US10923320B2 (en) 2021-02-16
US20210134561A1 (en) 2021-05-06
TW201832620A (zh) 2018-09-01
US10373804B2 (en) 2019-08-06
US20180226225A1 (en) 2018-08-09
WO2018144374A1 (en) 2018-08-09
US20190348258A1 (en) 2019-11-14
CN110249407A (zh) 2019-09-17

Similar Documents

Publication Publication Date Title
US10923320B2 (en) System for tunable workpiece biasing in a plasma reactor
JP7432781B2 (ja) プラズマ処理源および基板バイアスの同期パルス化
CN116018665B (zh) 电压脉冲的时域复用
KR102733501B1 (ko) 근사화된 톱니파 펄싱을 갖는 rf 전력 전달
KR102319781B1 (ko) 기판 에칭 동안 기판 ｄｃ 바이어스 및 이온 에너지 및 각 분포를 제어하는 방법 및 장치
KR102852532B1 (ko) 기판을 프로세싱하기 위한 방법들 및 장치
US20190035606A1 (en) Plasma Processing Apparatus and Method, and Method of Manufacturing Semiconductor Device Using the Same
US20190096636A1 (en) Plasma processing apparatus, plasma processing method and method of manufacturing semiconductor device using the same
JP2025537724A (ja) 均一性及びエッチングプロファイル調整のためのマルチシェイプ電圧パルス列
JP6180890B2 (ja) プラズマ処理方法
US20190348260A1 (en) Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
TW201911363A (zh) 偏壓調製方法、偏壓調製系統和電漿處理裝置
US20250112040A1 (en) Thin film growth modulation using wafer bow
KR20240073030A (ko) 유도 커플링 플라즈마 (inductively coupled plasma) 에서 이온 에너지를 향상시키고 이온 에너지 확산을 감소시키기 위한 방법 및 장치
KR20250083894A (ko) 플라즈마 처리 장비
TE III The Response of a Microwave Multipolar Bucket Plasma to a High Voltage Pulse

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PC1904 Unpaid initial registration fee

St.27 status event code: A-2-2-U10-U14-oth-PC1904

St.27 status event code: N-2-6-B10-B12-nap-PC1904