JP2020203314A - 基板処理方法及び基板処理装置 - Google Patents
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Abstract
Description
310 ハウジング
320 支持ユニット
400 レーザーユニット
410 レーザー光源
420 調節部
430 ビジョン部材
S10 膜質厚さ測定段階
S20 レシピ読出し段階
S30 レーザー照射段階
Claims (20)
- 基板を処理する方法において、
回転する前記基板にパルスレーザーを照射して前記基板の上の膜質を除去し、
除去しようとする前記膜質の厚さを測定し、測定された前記膜質の厚さ値に基づいて前記パルスレーザーのパルスエネルギーを選択する基板処理方法。 - 前記膜質の厚さ値に応じて前記膜質が完全に除去されるアブレーションエネルギーに基づいて前記パルスエネルギーを選択する請求項1に記載の基板処理方法。
- 前記パルスエネルギーは、前記アブレーションエネルギーに対応する請求項2に記載の基板処理方法。
- 前記膜質は、
第1膜、及び前記第1膜と異なる膜質である第2膜含み、
前記第1膜と前記第2膜は、互いに積層され、
前記第1膜を除去する時、前記第1膜の厚さ値に応じて前記第1膜が完全に除去される第1アブレーションエネルギーに基づいて前記パルスエネルギーを選択し、
前記第2膜を除去する時、前記第2膜の厚さ値に応じて前記第2膜が完全に除去される第2アブレーションエネルギーに基づいて前記パルスエネルギーを選択する請求項1に記載の基板処理方法。 - 前記第1膜を除去する時、前記第1アブレーションエネルギーに対応する前記パルスエネルギーを選択し、
前記第2膜を除去する時、前記第2アブレーションエネルギーに対応する前記パルスエネルギーを選択する請求項4に記載の基板処理方法。 - 前記パルスレーザーの出力及び/又は反復率を制御して前記パルスエネルギーを調節する請求項1乃至請求項5のいずれかの一項に記載の基板処理方法。
- 前記パルスレーザーが照射される領域は、前記基板のエッジ領域である請求項1乃至請求項5のいずれかの一項に記載の基板処理方法。
- 前記膜質の厚さを測定する領域は、前記基板のエッジ領域である請求項1乃至請求項5のいずれかの一項に記載の基板処理方法。
- 前記膜質の厚さ測定と前記パルスレーザーの照射は、順次的に遂行される請求項1乃至請求項5のいずれかの一項に記載の基板処理方法。
- 前記膜質の厚さ測定と前記パルスレーザーの照射は、同時に遂行される請求項1乃至請求項5のいずれかの一項に記載の基板処理方法。
- 基板を処理する装置において、
内部空間を有するハウジングと、
前記内部空間で基板を支持し、回転させる支持ユニットと、
前記支持ユニットに支持された基板の上の膜質を除去するパルスレーザーを照射するレーザーユニットと、
基板の上の膜質の厚さを測定する測定ユニットと、
前記レーザーユニットと前記測定ユニットを制御する制御器と、を含み、
前記制御器は、
基板の上の膜質を除去するための処理条件が記録されたレシピ記憶部と、
前記処理条件を読み出し、読み出された処理条件に基づいて前記パルスレーザーのパルスエネルギーを制御する制御信号を出力する実行部と、を含み、
前記実行部は、
前記測定ユニットが測定した前記膜質の厚さ値に応じて前記処理条件を前記レシピ記憶部から読み出し、
前記レシピ記憶部から読み出された前記処理条件に基づいて前記パルスエネルギーを制御する制御信号を出力する基板処理装置。 - 前記実行部は、
前記処理条件の中で前記測定ユニットが測定した前記膜質の厚さ値に応じて前記膜質が完全に除去されるアブレーションエネルギーを前記レシピ記憶部から読み出し、
前記レシピ記憶部で読み出された前記アブレーションエネルギーに基づいて前記パルスエネルギーを制御する制御信号を出力する請求項11に記載の基板処理装置。 - 前記実行部は、
前記パルスエネルギーが前記アブレーションエネルギーに対応するエネルギーを有するように制御信号を出力する請求項12に記載の基板処理装置。 - 前記膜質は、
第1膜、及び前記第1膜と異なる膜質である第2膜含み、
前記第1膜と前記第2膜は、互いに積層され、
前記実行部は、
前記第1膜を除去する時、前記処理条件の中で前記測定ユニットが測定した前記第1膜の厚さ値に応じて前記第1膜が完全に除去される第1アブレーションエネルギーを前記レシピ記憶部から読み出し、前記レシピ記憶部が読み出した前記第1アブレーションエネルギーに基づいて前記パルスエネルギーを制御する制御信号を出力し、
前記第2膜を除去する時、前記処理条件の中で前記測定ユニットが測定した前記第2膜の厚さ値に応じて前記第2膜が完全に除去される第2アブレーションエネルギーを前記レシピ記憶部から読み出し、前記レシピ記憶部が読み出した前記第2アブレーションエネルギーに基づいて前記パルスエネルギーを制御する制御信号を出力する請求項11に記載の基板処理装置。 - 前記実行部は、
前記第1膜を除去する時、前記パルスエネルギーが前記第1アブレーションエネルギーに対応するエネルギーを有するように制御信号を出力し、
前記第2膜を除去する時、前記パルスエネルギーが前記第2アブレーションエネルギーに対応するエネルギーを有するように制御信号を出力する請求項14に記載の基板処理装置。 - 前記実行部は、
前記パルスレーザーの出力及び/又は反復率を制御する制御信号を出力して前記パルスエネルギーを調節する請求項12乃至請求項15のいずれかの一項に記載の基板処理装置。 - 前記制御器は、
前記パルスレーザーが基板のエッジ領域に照射されるように前記レーザーユニットを制御する請求項12乃至請求項15のいずれかの一項に記載の基板処理装置。 - 前記制御器は、
前記膜質の厚さを測定する領域が基板のエッジ領域がされるように前記測定ユニットを制御する請求項12乃至請求項15のいずれかの一項に記載の基板処理装置。 - 前記制御器は、
前記膜質の厚さ測定と前記パルスレーザーの照射が順次的に遂行されるように前記レーザーユニットと前記測定ユニットを制御する請求項12乃至請求項15のいずれかの一項に記載の基板処理装置。 - 前記制御器は、
前記膜質の厚さ測定と前記パルスレーザーの照射が同時に遂行されるように前記レーザーユニットと前記測定ユニットを制御する請求項12乃至請求項15のいずれかの一項に記載の基板処理装置。
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11135726A (ja) * | 1997-10-31 | 1999-05-21 | Toyota Motor Corp | レーザトリミング方法及びレーザトリミング装置 |
US20130160792A1 (en) * | 2011-12-26 | 2013-06-27 | Hon Hai Precision Industry Co., Ltd. | Coating removing device and coating removing method |
JP2014504004A (ja) * | 2010-12-03 | 2014-02-13 | ユーブイテック システムズ インコーポレイテッド | ウェハーのエッジ処理用の光ファイバビーム送出システム |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3222316B2 (ja) * | 1994-05-11 | 2001-10-29 | 理化学研究所 | パルス・レーザによる基板表面薄膜の除去方法 |
KR100310943B1 (ko) * | 2001-02-26 | 2001-10-12 | 정명세 | 초전도 소자의 포토리소그라피 방법 |
KR20040061442A (ko) * | 2002-12-31 | 2004-07-07 | 엘지.필립스 엘시디 주식회사 | 기판의 에지 비드 제거장치 및 방법 |
DE10318681B4 (de) * | 2003-04-24 | 2006-07-06 | Schott Ag | Verfahren und Vorrichtung zum Entfernen eines Randbereichs einer Substratschicht und zur Substratbeschichtung sowie Substrat |
KR100719367B1 (ko) * | 2005-06-24 | 2007-05-17 | 삼성전자주식회사 | 반도체 제조 장치 및 웨이퍼 가공 방법 |
JP2008110401A (ja) * | 2006-10-06 | 2008-05-15 | Sony Corp | レーザ加工装置、レーザ加工方法、配線基板の製造方法、表示装置の製造方法、及び配線基板 |
DE102007015767A1 (de) * | 2007-03-30 | 2008-10-02 | Oerlikon Optics UK Ltd., Yarnton | Methode zum Laserritzen von Solarzellen |
KR20110077246A (ko) * | 2009-12-30 | 2011-07-07 | 엘지디스플레이 주식회사 | 기판의 에지 비드 제거장치 및 방법 |
KR101144481B1 (ko) * | 2010-01-19 | 2012-05-11 | 엘지이노텍 주식회사 | 기판의 에지 비드 제거장치 및 방법 |
US20120015471A1 (en) * | 2010-07-14 | 2012-01-19 | Applied Materials, Inc. | Multiple-path laser edge delete process for thin-film solar modules |
KR20120120670A (ko) * | 2011-04-25 | 2012-11-02 | 위아코퍼레이션 주식회사 | 레이저 분할빔을 이용한 선택적 박막 제거장치 |
CN102995019B (zh) * | 2011-09-15 | 2015-04-22 | 沈阳黎明航空发动机(集团)有限责任公司 | 一种钛合金化铣刻型工艺 |
KR102063322B1 (ko) * | 2016-05-27 | 2020-01-08 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
KR20180126644A (ko) * | 2017-05-17 | 2018-11-28 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
-
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11135726A (ja) * | 1997-10-31 | 1999-05-21 | Toyota Motor Corp | レーザトリミング方法及びレーザトリミング装置 |
JP2014504004A (ja) * | 2010-12-03 | 2014-02-13 | ユーブイテック システムズ インコーポレイテッド | ウェハーのエッジ処理用の光ファイバビーム送出システム |
US20130160792A1 (en) * | 2011-12-26 | 2013-06-27 | Hon Hai Precision Industry Co., Ltd. | Coating removing device and coating removing method |
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