JP7303152B2 - 基板処理装置及び基板処理方法 - Google Patents
基板処理装置及び基板処理方法 Download PDFInfo
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
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- H01L21/02041—Cleaning
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Description
前記第1ビームシェイプでシェーピングされた前記第1レーザービームを基板の上部エッジに伝達して基板の上部エッジを処理し、前記第2ビームシェイプでシェーピングされた前記第2レーザービームを基板の下部エッジに伝達して基板の下部エッジを処理する段階と、を含み、前記第1ビームシェイプと前記第2ビームシェイプは互いに異なる。
414 ビームスプリッタ
415 第1レーザービーム
418 第2レーザービーム
420 第1ビームシェーピングユニット
430 第2ビームシェーピングユニット
440 第1ビームスキャニングユニット
450 第2ビームスキャニングユニット
Claims (11)
- 除去対象膜を含む基板が支持される支持ユニットと、
前記除去対象膜を処理するためのレーザービームを発生させるレーザー発生ユニットと、
前記レーザー発生ユニットから出て案内されたレーザービームを基板の上部エッジに向かう第1経路に沿う第1レーザービームと、基板の下部エッジに向かう第2経路に沿う第2レーザービームに分割するビームスプリッタと、
前記第1経路に提供されて前記第1レーザービームをシェーピングする第1ビームシェーピングユニットと、
前記第2経路に提供されて前記第2レーザービームをシェーピングする第2ビームシェーピングユニットと、
前記第1経路の前記第1ビームシェーピングユニットの下流に提供されて前記第1レーザービームを基板の上部エッジにスキャニングする第1ビームスキャニングユニットと、
前記第2経路の前記第2ビームシェーピングユニットの下流に提供されて前記第2レーザービームを基板の下部エッジにスキャニングする第2ビームスキャニングユニットと、を含み、
前記第1ビームシェーピングユニットによってシェーピングされた第1レーザービームのビームシェイプと前記第2ビームシェーピングユニットによってシェーピングされた第2レーザービームのビームシェイプは、互いに異なる基板処理装置。 - 前記基板の上部エッジの膜質条件と前記基板の下部エッジの膜質条件は、互いに異なる請求項1に記載の基板処理装置。
- 前記第1レーザービームと前記第2レーザービームによる基板処理は、同時に進行される請求項1に記載の基板処理装置。
- 前記第2ビームシェーピングユニットによってシェーピングされた第2レーザービームの断面は、前記第1ビームシェーピングユニットによってシェーピングされた第1レーザービームの断面より大きい請求項1に記載の基板処理装置。
- 前記第1ビームシェーピングユニットによってシェーピングされた第1レーザービームの単位面積当たりのエネルギーは、前記第2ビームシェーピングユニットによってシェーピングされた第2レーザービームの単位面積当たりのエネルギーより大きい請求項1に記載の基板処理装置。
- 前記第1ビームシェーピングユニットによってシェーピングされた第1レーザービームの膜蝕刻率は、前記第2ビームシェーピングユニットによってシェーピングされた第2レーザービームの膜蝕刻率より大きい請求項1に記載の基板処理装置。
- 前記第1ビームスキャニングユニットのスキャニング速度と前記第2ビームスキャニングユニットのスキャニング速度は、互いに異なる請求項1に記載の基板処理装置。
- 前記第1ビームスキャニングユニットのスキャニング速度は、前記第2ビームスキャニングユニットのスキャニング速度より遅い請求項1に記載の基板処理装置。
- 基板の縁を処理する方法において、
除去対象膜を含む基板を搬入する段階と、
前記除去対象膜を処理するためのレーザービームを発生させる段階と、
前記レーザービームを第1経路に沿う第1レーザービームと第2経路に沿う第2レーザービームに分割する段階と、
前記第1レーザービームを第1ビームシェイプでシェーピングする段階と、
前記第2レーザービームを第2ビームシェイプでシェーピングする段階と、
前記第1ビームシェイプでシェーピングされた前記第1レーザービームを基板の上部エッジに伝達し、前記基板の半径方向に沿ってスキャニングして基板の上部エッジを処理し、前記第2ビームシェイプでシェーピングされた前記第2レーザービームを基板の下部エッジに伝達し、前記基板の半径方向に沿ってスキャニングして基板の下部エッジを処理する段階と、を含み、
前記第1ビームシェイプと前記第2ビームシェイプは、互いに異なる基板処理方法。 - 前記第1ビームシェイプを有する第1レーザービームの膜蝕刻率は、第2ビームシェーピングユニットによってシェーピングされた前記第2ビームシェイプを有する第2レーザービームの膜蝕刻率より大きい請求項9に記載の基板処理方法。
- 前記第1レーザービームによる基板の上部エッジと前記第2レーザービームによる基板の下部エッジの処理は、同時に行われる請求項9に記載の基板処理方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2019-0050340 | 2019-04-30 | ||
KR1020190050340A KR102245275B1 (ko) | 2019-04-30 | 2019-04-30 | 기판 처리 장치 및 기판 처리 방법 |
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