JP2020202353A5 - - Google Patents

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JP2020202353A5
JP2020202353A5 JP2019110519A JP2019110519A JP2020202353A5 JP 2020202353 A5 JP2020202353 A5 JP 2020202353A5 JP 2019110519 A JP2019110519 A JP 2019110519A JP 2019110519 A JP2019110519 A JP 2019110519A JP 2020202353 A5 JP2020202353 A5 JP 2020202353A5
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JP
Japan
Prior art keywords
opening
substrate
semiconductor device
etching step
insulator
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JP2019110519A
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Japanese (ja)
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JP2020202353A (ja
JP7340965B2 (ja
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Priority to US16/890,289 priority patent/US11437299B2/en
Publication of JP2020202353A publication Critical patent/JP2020202353A/ja
Publication of JP2020202353A5 publication Critical patent/JP2020202353A5/ja
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JP2019110519A 2019-06-13 2019-06-13 半導体装置およびその製造方法 Active JP7340965B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2019110519A JP7340965B2 (ja) 2019-06-13 2019-06-13 半導体装置およびその製造方法
US16/890,289 US11437299B2 (en) 2019-06-13 2020-06-02 Semiconductor apparatus and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019110519A JP7340965B2 (ja) 2019-06-13 2019-06-13 半導体装置およびその製造方法

Publications (3)

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JP2020202353A JP2020202353A (ja) 2020-12-17
JP2020202353A5 true JP2020202353A5 (https=) 2022-06-20
JP7340965B2 JP7340965B2 (ja) 2023-09-08

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JP2019110519A Active JP7340965B2 (ja) 2019-06-13 2019-06-13 半導体装置およびその製造方法

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JP (1) JP7340965B2 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240120425A1 (en) * 2022-10-06 2024-04-11 Canon Kabushiki Kaisha Semiconductor element and terahertz wave system

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7081408B2 (en) * 2004-10-28 2006-07-25 Intel Corporation Method of creating a tapered via using a receding mask and resulting structure
US20100013060A1 (en) 2008-06-22 2010-01-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a conductive trench in a silicon wafer and silicon wafer comprising such trench
JP5853351B2 (ja) 2010-03-25 2016-02-09 ソニー株式会社 半導体装置、半導体装置の製造方法、及び電子機器
JP5568357B2 (ja) 2010-04-05 2014-08-06 株式会社フジクラ 半導体装置及びその製造方法
JP5810921B2 (ja) 2012-01-06 2015-11-11 凸版印刷株式会社 半導体装置の製造方法
JP2013246021A (ja) * 2012-05-25 2013-12-09 Seiko Epson Corp 熱型電磁波検出素子、熱型電磁波検出素子の製造方法、熱型電磁波検出装置および電子機器
US10622402B2 (en) 2015-03-31 2020-04-14 Hamamatsu Photonics K.K. Semiconductor device
JP6443362B2 (ja) 2016-03-03 2018-12-26 株式会社デンソー 半導体装置

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