JP2020182035A - Sawフィルタの製造方法及びsawフィルタ - Google Patents
Sawフィルタの製造方法及びsawフィルタ Download PDFInfo
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- JP2020182035A JP2020182035A JP2019082145A JP2019082145A JP2020182035A JP 2020182035 A JP2020182035 A JP 2020182035A JP 2019082145 A JP2019082145 A JP 2019082145A JP 2019082145 A JP2019082145 A JP 2019082145A JP 2020182035 A JP2020182035 A JP 2020182035A
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- saw filter
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 238000000034 method Methods 0.000 claims abstract description 34
- 230000001678 irradiating effect Effects 0.000 claims abstract 2
- 230000002093 peripheral effect Effects 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000002745 absorbent Effects 0.000 claims 1
- 239000002250 absorbent Substances 0.000 claims 1
- 238000010897 surface acoustic wave method Methods 0.000 description 68
- 230000000694 effects Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 3
- 238000005422 blasting Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical group [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6406—Filters characterised by a particular frequency characteristic
- H03H9/6413—SAW comb filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6406—Filters characterised by a particular frequency characteristic
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
- H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02259—Driving or detection means
- H03H9/02275—Comb electrodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
- H03H9/02622—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves of the surface, including back surface
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
- H10N30/088—Shaping or machining of piezoelectric or electrostrictive bodies by machining by cutting or dicing
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
本発明の実施形態に係るSAWフィルタの製造方法を図面に基づいて説明する。図1は、実施形態に係るSAWフィルタの製造方法の製造対象の圧電体基板1の斜視図である。圧電体基板1は、本実施形態では、タンタル酸リチウム(LiTaO3)からなる円板状のタンタル酸リチウム(Lithium Tantalate、LT)基板又はニオブ酸リチウム(LiNbO3)からなる円板状のニオブ酸リチウム(Lithium Niobate、LN)基板である。圧電体基板1は、本実施形態では、厚さが約130μmである。圧電体基板1は、図1に示すように、表面2に交差(実施形態では、直交)する複数の分割予定ライン3が設定され、これらの分割予定ライン3で区画された表面2の各領域にそれぞれ、後述するくし型電極(Interdigital Transducer、IDT)11(図7参照)を含むデバイス4が形成されている。
本発明の実施形態の変形例1に係るSAWフィルタの製造方法を図面に基づいて説明する。図9は、実施形態の変形例1に係る分割ステップST12の一例を示す斜視図である。図9は、実施形態と同一部分に同一符号を付して説明を省略する。
2 表面
3 分割予定ライン
4 デバイス
5 裏面
5−1,5−2 領域
10 SAWフィルタ
11 くし型電極
12 構造物
13−1 中央領域
13−2 外周縁部
30 レーザー加工ユニット
31 レーザービーム照射ユニット
33 レーザービーム
Claims (4)
- 表面に分割予定ラインが設定され、該分割予定ラインによって区画された領域にくし型電極を含むデバイスを有する圧電体基板からSAWフィルタを製造するSAWフィルタの製造方法であって、
該圧電体基板の裏面側から該圧電体基板に対して吸収性を有する波長のレーザービームを照射し、該圧電体基板の裏面側に凹凸を有する構造物を形成する構造物形成ステップと、
該構造物形成ステップの後、該分割予定ラインに沿って該圧電体基板を分割する分割ステップと、を有し、
該構造物形成ステップで形成される凹凸を有する構造物は、
凸部の頂点から凹部の底面までの距離が1μm以上に設定されることを特徴とする、SAWフィルタの製造方法。 - 該構造物形成ステップにおいて、
分割後のデバイスの裏面側の外周縁部を含む所定の領域には凹凸を有する構造物が形成されないように、
該圧電体基板の分割予定ラインに対応する領域を含む所定の領域を除いて該レーザービームを照射することを特徴とする、請求項1に記載のSAWフィルタの製造方法。 - 圧電体基板の表面にくし型電極を備えるSAWフィルタであって、
該圧電体基板の裏面側には凹凸を有する構造物が形成されており、
該凹凸を有する構造物の凸部の頂点から凹部の底面までの距離は1μm以上であることを特徴とするSAWフィルタ。 - 該凹凸を有する構造物は、
該圧電体基板の裏面側の外周縁部を含む所定の領域を除いて形成されていることを特徴とする、請求項3に記載のSAWフィルタ。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019082145A JP2020182035A (ja) | 2019-04-23 | 2019-04-23 | Sawフィルタの製造方法及びsawフィルタ |
KR1020200034191A KR20200124156A (ko) | 2019-04-23 | 2020-03-20 | Saw 필터의 제조 방법 및 saw 필터 |
US16/840,729 US11088674B2 (en) | 2019-04-23 | 2020-04-06 | Saw filter manufacturing method and saw filter |
SG10202003217SA SG10202003217SA (en) | 2019-04-23 | 2020-04-08 | Saw filter manufacturing method and saw filter |
TW109113182A TWI837344B (zh) | 2019-04-23 | 2020-04-20 | Saw濾波器之製造方法 |
CN202010315329.2A CN111835313A (zh) | 2019-04-23 | 2020-04-21 | Saw滤波器的制造方法和saw滤波器 |
DE102020205160.7A DE102020205160A1 (de) | 2019-04-23 | 2020-04-23 | AOW-FILTER-HERSTELLUNGSVERFAHREN und AOW-FILTER |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019082145A JP2020182035A (ja) | 2019-04-23 | 2019-04-23 | Sawフィルタの製造方法及びsawフィルタ |
Publications (1)
Publication Number | Publication Date |
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JP2020182035A true JP2020182035A (ja) | 2020-11-05 |
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JP2019082145A Pending JP2020182035A (ja) | 2019-04-23 | 2019-04-23 | Sawフィルタの製造方法及びsawフィルタ |
Country Status (7)
Country | Link |
---|---|
US (1) | US11088674B2 (ja) |
JP (1) | JP2020182035A (ja) |
KR (1) | KR20200124156A (ja) |
CN (1) | CN111835313A (ja) |
DE (1) | DE102020205160A1 (ja) |
SG (1) | SG10202003217SA (ja) |
TW (1) | TWI837344B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114512412B (zh) * | 2022-04-20 | 2022-07-12 | 苏州科阳半导体有限公司 | 一种声表面波滤波器晶圆封装方法及芯片 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03114310A (ja) * | 1989-09-28 | 1991-05-15 | Toshiba Corp | 弾性表面波フィルター用基板およびその製造方法 |
JP2000278090A (ja) * | 1999-01-21 | 2000-10-06 | Hokuriku Electric Ind Co Ltd | 弾性表面波素子とその製造方法 |
JP2003008396A (ja) * | 2001-06-22 | 2003-01-10 | Japan Radio Co Ltd | 弾性表面波素子及びその製造方法 |
JP2010161697A (ja) * | 2009-01-09 | 2010-07-22 | Ngk Insulators Ltd | 弾性表面波素子 |
JP2012015767A (ja) * | 2010-06-30 | 2012-01-19 | Murata Mfg Co Ltd | 弾性波デバイス |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3880150B2 (ja) * | 1997-06-02 | 2007-02-14 | 松下電器産業株式会社 | 弾性表面波素子 |
DE102004062312B3 (de) * | 2004-12-23 | 2006-06-01 | Infineon Technologies Ag | Piezoelektrischer Resonator mit verbesserter Temperaturkompensation und Verfahren zum Herstellen desselben |
KR100912553B1 (ko) * | 2008-03-07 | 2009-08-19 | 오영주 | 압전기판 및 이를 이용한 saw 필터 |
US9991870B2 (en) * | 2015-08-25 | 2018-06-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Surface acoustic wave (SAW) resonator |
JP2017046225A (ja) * | 2015-08-27 | 2017-03-02 | 株式会社ディスコ | Bawデバイス及びbawデバイスの製造方法 |
CN106160691A (zh) * | 2016-07-05 | 2016-11-23 | 电子科技大学 | 一种基于Si基的高频SAW器件及其制备方法 |
-
2019
- 2019-04-23 JP JP2019082145A patent/JP2020182035A/ja active Pending
-
2020
- 2020-03-20 KR KR1020200034191A patent/KR20200124156A/ko active Search and Examination
- 2020-04-06 US US16/840,729 patent/US11088674B2/en active Active
- 2020-04-08 SG SG10202003217SA patent/SG10202003217SA/en unknown
- 2020-04-20 TW TW109113182A patent/TWI837344B/zh active
- 2020-04-21 CN CN202010315329.2A patent/CN111835313A/zh active Pending
- 2020-04-23 DE DE102020205160.7A patent/DE102020205160A1/de active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03114310A (ja) * | 1989-09-28 | 1991-05-15 | Toshiba Corp | 弾性表面波フィルター用基板およびその製造方法 |
JP2000278090A (ja) * | 1999-01-21 | 2000-10-06 | Hokuriku Electric Ind Co Ltd | 弾性表面波素子とその製造方法 |
JP2003008396A (ja) * | 2001-06-22 | 2003-01-10 | Japan Radio Co Ltd | 弾性表面波素子及びその製造方法 |
JP2010161697A (ja) * | 2009-01-09 | 2010-07-22 | Ngk Insulators Ltd | 弾性表面波素子 |
JP2012015767A (ja) * | 2010-06-30 | 2012-01-19 | Murata Mfg Co Ltd | 弾性波デバイス |
Also Published As
Publication number | Publication date |
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US11088674B2 (en) | 2021-08-10 |
US20200343878A1 (en) | 2020-10-29 |
DE102020205160A1 (de) | 2020-10-29 |
KR20200124156A (ko) | 2020-11-02 |
TW202040935A (zh) | 2020-11-01 |
TWI837344B (zh) | 2024-04-01 |
CN111835313A (zh) | 2020-10-27 |
SG10202003217SA (en) | 2020-11-27 |
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