JP2020144119A - 圧力センサダイの取付け - Google Patents
圧力センサダイの取付け Download PDFInfo
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- JP2020144119A JP2020144119A JP2020031322A JP2020031322A JP2020144119A JP 2020144119 A JP2020144119 A JP 2020144119A JP 2020031322 A JP2020031322 A JP 2020031322A JP 2020031322 A JP2020031322 A JP 2020031322A JP 2020144119 A JP2020144119 A JP 2020144119A
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- 229910052710 silicon Inorganic materials 0.000 description 10
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Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
- G01L9/0048—Details about the mounting of the diaphragm to its support or about the diaphragm edges, e.g. notches, round shapes for stress relief
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/225—Measuring circuits therefor
- G01L1/2262—Measuring circuits therefor involving simple electrical bridges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/145—Housings with stress relieving means
- G01L19/146—Housings with stress relieving means using flexible element between the transducer and the support
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/148—Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Child & Adolescent Psychology (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
Claims (10)
- フレーム(220)によって支持されたメンブレン(210)を有する圧力センサダイ(200)と、
上面および前記上面内に位置するトレンチ(110)を有するパッケージ(100)であって、前記フレーム(220)の一部分(222)が前記トレンチ(110)内に位置する、パッケージ(100)と、
前記トレンチ(110)内に位置する第1の材料(400)であって、前記フレームの底部(224)と前記トレンチの底面(112)との間に位置し、前記フレームの下部分(222)を取り囲む第1の材料(400)と
を備えている、圧力センサシステム。 - 前記パッケージ(100)を通って前記メンブレン(210)の下に開口(624)を形成する通路(120)をさらに備えている、請求項1に記載の圧力センサシステム。
- フレーム(220)によって支持されたメンブレン(210)を有する圧力センサダイ(200)と、
上面および前記上面内に位置するトレンチ(110)を有するパッケージ(100)であって、前記フレーム(220)の一部分が前記トレンチ(110)内に位置する、パッケージ(100)と、
前記トレンチ(110)内に位置する第1の材料(400)であって、前記フレームの底部(224)と前記トレンチの底面(112)との間に位置する第1の材料(400)と、
前記トレンチ(110)内で前記第1の材料(400)上に位置する第2の材料(500)であって、前記フレームの下部分(222)を取り囲む第2の材料(500)と
を備えている、圧力センサシステム。 - 前記パッケージ(100)を通って前記メンブレン(210)の下に開口(624)を形成する通路(120)をさらに備えている、請求項3に記載の圧力センサシステム。
- 前記第1の材料(400)および前記第2の材料(500)が接着剤である、請求項3に記載の圧力センサシステム。
- 前記第1の材料(400)および前記第2の材料(500)が同じ材料を含んでいる、請求項3に記載の圧力センサシステム。
- 前記第2の材料(500)がシリコーンである、請求項3に記載の圧力センサシステム。
- 中心通路(610)を有するチューブ(600)と、
前記チューブ(600)の周りに形成された基板(620)であって、上面側にトレンチ(110)を有し、それにより前記チューブ(600)の上部分が前記トレンチ(110)内で露出され、前記チューブ(600)の前記中心通路(610)が、前記基板(620)を通る通路の少なくとも一部分を形成する、基板(620)と、
フレーム(220)によって支持されたメンブレン(210)を有する圧力センサダイ(200)であって、前記メンブレン(210)および前記フレーム(220)が、前記圧力センサダイ(200)内に後方空洞(230)を画定し、前記チューブ(600)の前記上部分が前記圧力センサダイ(200)の前記後方空洞(230)内に位置するように前記フレーム(220)の一部分が前記トレンチ(110)内に位置する、圧力センサダイ(200)と、
前記トレンチ(110)内に位置する第1の材料(400)であって、前記フレームの底部(224)と前記トレンチの底面(112)との間に位置する第1の材料(400)と、
前記トレンチ(110)内で前記第1の材料(400)上に位置する第2の材料(500)であって、前記フレームの下部分(222)を取り囲む第2の材料(500)と
を備えている、圧力センサシステム。 - 前記基板が、射出成形によって形成されている、請求項8に記載の圧力センサシステム。
- 前記第1の材料(400)および前記第2の材料(500)が1つまたは複数の接着剤である、請求項8に記載の圧力センサシステム。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201962813661P | 2019-03-04 | 2019-03-04 | |
US62/813,661 | 2019-03-04 | ||
US16/724,166 US11060929B2 (en) | 2019-03-04 | 2019-12-20 | Pressure sensor die attach |
US16/724,166 | 2019-12-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020144119A true JP2020144119A (ja) | 2020-09-10 |
JP7479870B2 JP7479870B2 (ja) | 2024-05-09 |
Family
ID=69742823
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020031322A Active JP7479870B2 (ja) | 2019-03-04 | 2020-02-27 | 圧力センサダイの取付け |
Country Status (4)
Country | Link |
---|---|
US (1) | US11060929B2 (ja) |
EP (1) | EP3705864B1 (ja) |
JP (1) | JP7479870B2 (ja) |
CN (1) | CN111649867A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112857631B (zh) * | 2021-04-23 | 2021-08-20 | 武汉飞恩微电子有限公司 | 一种芯体结构及压力传感器 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
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US4943032A (en) * | 1986-09-24 | 1990-07-24 | Stanford University | Integrated, microminiature electric to fluidic valve and pressure/flow regulator |
JP3873454B2 (ja) | 1998-05-29 | 2007-01-24 | 株式会社デンソー | 半導体圧力センサ |
US20010001550A1 (en) * | 1998-11-12 | 2001-05-24 | Janusz Bryzek | Integral stress isolation apparatus and technique for semiconductor devices |
US6351996B1 (en) | 1998-11-12 | 2002-03-05 | Maxim Integrated Products, Inc. | Hermetic packaging for semiconductor pressure sensors |
JP2003083828A (ja) * | 2001-06-28 | 2003-03-19 | Matsushita Electric Works Ltd | 半導体圧力センサ |
DE102004006199B4 (de) | 2004-02-09 | 2015-09-03 | Robert Bosch Gmbh | Mikromechanischer Drucksensor für hohe Drücke |
US7539003B2 (en) * | 2005-12-01 | 2009-05-26 | Lv Sensors, Inc. | Capacitive micro-electro-mechanical sensors with single crystal silicon electrodes |
US8174084B2 (en) * | 2006-09-19 | 2012-05-08 | Intel Corporation | Stress sensor for in-situ measurement of package-induced stress in semiconductor devices |
US8191423B2 (en) * | 2010-03-29 | 2012-06-05 | Continental Automotive Systems, Inc. | Grooved structure for die-mount and media sealing |
CN102486427A (zh) * | 2010-12-06 | 2012-06-06 | 飞思卡尔半导体公司 | 压力传感器及其封装方法 |
US8375799B2 (en) * | 2010-12-10 | 2013-02-19 | Honeywell International Inc. | Increased sensor die adhesion |
US8889451B2 (en) * | 2012-02-21 | 2014-11-18 | Freescale Semiconductor, Inc. | MEMS pressure transducer assembly and method of packaging same |
US8962389B2 (en) * | 2013-05-30 | 2015-02-24 | Freescale Semiconductor, Inc. | Microelectronic packages including patterned die attach material and methods for the fabrication thereof |
ITTO20130540A1 (it) * | 2013-06-28 | 2014-12-29 | St Microelectronics Srl | Dispositivo mems dotato di membrana sospesa e relativo procedimento di fabbricazione |
US9366593B2 (en) * | 2013-09-27 | 2016-06-14 | Infineon Technologies Ag | Pressure sensor package with integrated sealing |
US9586812B2 (en) * | 2015-04-09 | 2017-03-07 | Nxp Usa, Inc. | Device with vertically integrated sensors and method of fabrication |
ITUB20160759A1 (it) * | 2016-02-15 | 2017-08-15 | St Microelectronics Srl | Sensore di pressione incapsulato in materiale elastomerico, e sistema includente il sensore di pressione |
CN107527874B (zh) * | 2016-06-20 | 2023-08-01 | 恩智浦美国有限公司 | 腔式压力传感器器件 |
IT201700035969A1 (it) * | 2017-03-31 | 2018-10-01 | St Microelectronics Srl | Dispositivo mems includente un sensore di pressione di tipo capacitivo e relativo processo di fabbricazione |
US11268839B2 (en) * | 2019-03-05 | 2022-03-08 | Measurement Specialties, Inc. | Resistive flow sensor |
-
2019
- 2019-12-20 US US16/724,166 patent/US11060929B2/en active Active
-
2020
- 2020-02-27 JP JP2020031322A patent/JP7479870B2/ja active Active
- 2020-02-27 EP EP20159884.4A patent/EP3705864B1/en active Active
- 2020-03-04 CN CN202010142087.1A patent/CN111649867A/zh active Pending
Also Published As
Publication number | Publication date |
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JP7479870B2 (ja) | 2024-05-09 |
EP3705864A1 (en) | 2020-09-09 |
US11060929B2 (en) | 2021-07-13 |
US20200284668A1 (en) | 2020-09-10 |
CN111649867A (zh) | 2020-09-11 |
EP3705864B1 (en) | 2021-10-20 |
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