IT201700035969A1 - Dispositivo mems includente un sensore di pressione di tipo capacitivo e relativo processo di fabbricazione - Google Patents

Dispositivo mems includente un sensore di pressione di tipo capacitivo e relativo processo di fabbricazione

Info

Publication number
IT201700035969A1
IT201700035969A1 IT102017000035969A IT201700035969A IT201700035969A1 IT 201700035969 A1 IT201700035969 A1 IT 201700035969A1 IT 102017000035969 A IT102017000035969 A IT 102017000035969A IT 201700035969 A IT201700035969 A IT 201700035969A IT 201700035969 A1 IT201700035969 A1 IT 201700035969A1
Authority
IT
Italy
Prior art keywords
processing
pressure sensor
device including
mems device
type pressure
Prior art date
Application number
IT102017000035969A
Other languages
English (en)
Inventor
Enri Duqi
Lorenzo Baldo
Roberto Carminati
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Priority to IT102017000035969A priority Critical patent/IT201700035969A1/it
Priority to CN201710942568.9A priority patent/CN108692836B/zh
Priority to CN201721307659.7U priority patent/CN207689049U/zh
Priority to US15/870,429 priority patent/US10407301B2/en
Publication of IT201700035969A1 publication Critical patent/IT201700035969A1/it
Priority to US16/522,301 priority patent/US10689251B2/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
    • G01L1/144—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors with associated circuitry
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
    • G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0242—Gyroscopes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/09—Packages
    • B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
    • B81B2207/097—Interconnects arranged on the substrate or the lid, and covered by the package seal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Measuring Fluid Pressure (AREA)
IT102017000035969A 2017-03-31 2017-03-31 Dispositivo mems includente un sensore di pressione di tipo capacitivo e relativo processo di fabbricazione IT201700035969A1 (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT102017000035969A IT201700035969A1 (it) 2017-03-31 2017-03-31 Dispositivo mems includente un sensore di pressione di tipo capacitivo e relativo processo di fabbricazione
CN201710942568.9A CN108692836B (zh) 2017-03-31 2017-10-11 包括电容式压力传感器的mems器件及其制造方法
CN201721307659.7U CN207689049U (zh) 2017-03-31 2017-10-11 Mems器件
US15/870,429 US10407301B2 (en) 2017-03-31 2018-01-12 MEMS device including a capacitive pressure sensor and manufacturing process thereof
US16/522,301 US10689251B2 (en) 2017-03-31 2019-07-25 MEMS device including a capacitive pressure sensor and manufacturing process thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT102017000035969A IT201700035969A1 (it) 2017-03-31 2017-03-31 Dispositivo mems includente un sensore di pressione di tipo capacitivo e relativo processo di fabbricazione

Publications (1)

Publication Number Publication Date
IT201700035969A1 true IT201700035969A1 (it) 2018-10-01

Family

ID=59521578

Family Applications (1)

Application Number Title Priority Date Filing Date
IT102017000035969A IT201700035969A1 (it) 2017-03-31 2017-03-31 Dispositivo mems includente un sensore di pressione di tipo capacitivo e relativo processo di fabbricazione

Country Status (3)

Country Link
US (2) US10407301B2 (it)
CN (2) CN207689049U (it)
IT (1) IT201700035969A1 (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT201700035969A1 (it) * 2017-03-31 2018-10-01 St Microelectronics Srl Dispositivo mems includente un sensore di pressione di tipo capacitivo e relativo processo di fabbricazione
CN109231153A (zh) * 2018-08-22 2019-01-18 深圳市奥极医疗科技有限公司 微加速度传感器的芯片级封装结构及制作方法与划片方法
US11060929B2 (en) * 2019-03-04 2021-07-13 Silicon Microstructures, Inc. Pressure sensor die attach
CN111208317B (zh) * 2020-02-26 2021-07-02 深迪半导体(绍兴)有限公司 Mems惯性传感器及应用方法和电子设备
CN111246336B (zh) * 2020-02-27 2022-03-08 深迪半导体(绍兴)有限公司 耳机和电子设备

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160327446A1 (en) * 2014-01-14 2016-11-10 Robert Bosch Gmbh Micromechanical pressure sensor device and corresponding manufacturing method

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US8193596B2 (en) * 2008-09-03 2012-06-05 Solid State System Co., Ltd. Micro-electro-mechanical systems (MEMS) package
EP2252077B1 (en) * 2009-05-11 2012-07-11 STMicroelectronics Srl Assembly of a capacitive acoustic transducer of the microelectromechanical type and package thereof
US8387464B2 (en) * 2009-11-30 2013-03-05 Freescale Semiconductor, Inc. Laterally integrated MEMS sensor device with multi-stimulus sensing
US8316718B2 (en) * 2010-08-23 2012-11-27 Freescale Semiconductor, Inc. MEMS pressure sensor device and method of fabricating same
TWI506249B (zh) * 2011-04-15 2015-11-01 Ind Tech Res Inst 微機電感測裝置
US20130001710A1 (en) * 2011-06-29 2013-01-03 Invensense, Inc. Process for a sealed mems device with a portion exposed to the environment
US9046546B2 (en) * 2012-04-27 2015-06-02 Freescale Semiconductor Inc. Sensor device and related fabrication methods
EP2806258B1 (en) * 2013-05-20 2018-09-12 ams international AG Differential pressure sensor
ITTO20130540A1 (it) * 2013-06-28 2014-12-29 St Microelectronics Srl Dispositivo mems dotato di membrana sospesa e relativo procedimento di fabbricazione
US9035451B2 (en) * 2013-09-30 2015-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer level sealing methods with different vacuum levels for MEMS sensors
ITTO20130838A1 (it) * 2013-10-16 2015-04-17 St Microelectronics Srl Dispositivo microelettromeccanico con protezione per bonding e procedimento per la fabbricazione di un dispositivo microelettromeccanico
US9156678B2 (en) * 2013-12-12 2015-10-13 Qualcomm Mems Technologies, Inc. MEMS encapsulation by multilayer film lamination
US9463976B2 (en) * 2014-06-27 2016-10-11 Freescale Semiconductor, Inc. MEMS fabrication process with two cavities operating at different pressures
US9567210B2 (en) * 2015-02-24 2017-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-pressure MEMS package
DE102015206863B3 (de) * 2015-04-16 2016-05-25 Robert Bosch Gmbh Verfahren zur Herstellung einer Mikrofonstruktur und einer Drucksensorstruktur im Schichtaufbau eines MEMS-Bauelements
US9926190B2 (en) * 2016-01-21 2018-03-27 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS devices and methods of forming the same
IT201700035969A1 (it) * 2017-03-31 2018-10-01 St Microelectronics Srl Dispositivo mems includente un sensore di pressione di tipo capacitivo e relativo processo di fabbricazione

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160327446A1 (en) * 2014-01-14 2016-11-10 Robert Bosch Gmbh Micromechanical pressure sensor device and corresponding manufacturing method

Also Published As

Publication number Publication date
US10689251B2 (en) 2020-06-23
US10407301B2 (en) 2019-09-10
US20180282152A1 (en) 2018-10-04
CN108692836A (zh) 2018-10-23
CN207689049U (zh) 2018-08-03
US20190345028A1 (en) 2019-11-14
CN108692836B (zh) 2021-04-02

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