CN104132773A - 压力检测机构 - Google Patents

压力检测机构 Download PDF

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CN104132773A
CN104132773A CN201410342824.7A CN201410342824A CN104132773A CN 104132773 A CN104132773 A CN 104132773A CN 201410342824 A CN201410342824 A CN 201410342824A CN 104132773 A CN104132773 A CN 104132773A
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package substrate
detection mechanism
pressure detection
naked core
mechanism according
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I.本特利
A.D.布拉德利
J.库克
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Honeywell International Inc
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Honeywell International Inc
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/148—Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

一种压力检测机构，具有压力敏感裸芯，可利用具有最佳厚度的粘合剂将裸芯被直接附连至氧化铝基衬底的表面。该粘合剂可以是应力顺从的，并且可以是硅酮，硅酮环-氧树脂，环氧树脂或任何其它合适的粘合剂材料的一个或多个。补偿和接口专用集成电路可被附连至封装衬底的表面。可利用接合线将压力敏感裸芯电连接至集成电路。可利用接合线将该集成电路电连接至封装衬底上的迹线导体，并且迹线导体可被连接至用于外部连接装配表面（例如印刷电路板）的应力顺从金属导体或引线。具有一个或多个压力端口或通风孔的硬塑料或类似材料的对称盖子可被附连至衬底的两侧。

Description

压力检测机构
本申请是原案申请日为2010年7月9日、申请号为201010270262.1、发明名称为《具有不受约束的敏感裸芯的传感器封装组件》的中国发明专利申请的分案申请。
本申请要求于2009年7月10日申请，名称为“SENSOR PACKAGE ASSEMBLY HAVING AN UNCONSTRAINED SENSE DIE”的U.S.临时专利申请No.61/224,837的优先权。因此2009年7月10日申请的U.S.临时专利申请No.61/224,837通过引用并入本文。
技术领域
本申请涉及传感器，并且更具体地涉及传感器封装。
发明内容
本申请涉及传感器，并且更具体地涉及传感器封装。在一些情况中，所提供的传感器封装具有封装衬底，压力敏感裸芯有时利用适应顺从粘合剂被直接装配至封装衬底的表面以实现有效地不受约束的敏感裸芯。在一些情况中，封装衬底可以包括被电连接至一个或多个封装引线的一个或多个迹线和/或结合衬垫。该封装引线可以适用于表面装配传感器封装至比如印刷电路板等的装配表面。该封装引线可被布置成帮助提供衬底和装配表面之间顺从性的水平。
附图说明
图1a-1f是示出了用于描述性的传感器封装的各种端口和通风孔构造的示意图；
图2是示出了具有直接被装配至封装衬底的表面的压力敏感裸芯的描述性传感器的侧面剖视图的示意图；
图3是示出了描述性的传感器封装衬底，压力敏感裸芯，专用集成电路，接合线，迹线导体（trace conductor）和引线的立体图的示意图；
图4是示出了具有压力敏感裸芯，专用集成电路和装配于相同侧上的具有压力端口的盖子的描述性传感器衬底的侧面剖视图的示意图；
图5是类似图4的示意图，除了示出在衬底的与具有端口的盖子相对的侧面上的敏感裸芯，专用集成电路和具有通风孔的盖子。
具体实施方式
存在对低成本高精度压力传感器的长期存在的市场需要。在历史上，高精度传感器已经是复杂，制造昂贵的装置。
具体地，对于基于压阻式硅压力敏感裸芯的传感器，制造商已经利用许多不同的方法来使敏感元件与机械和热应力隔绝。已经使用了大的封装，恒温腔室以及最特别地使用了敏感裸芯元件和基底衬底或者更大传感器的封装之间的隔绝层。这些隔绝层通常是牢固地结合至硅敏感裸芯元件自身的下侧的一层或多层硅或玻璃。与敏感裸芯元件的结合通常是玻璃熔合或阳极结合。特殊玻璃常常用于紧密匹配硅敏感裸芯的热膨胀。
已经发现在一些情况中，敏感裸芯可被直接固定至封装衬底，没有任何中间隔绝层，同时在正常应力条件下性能仍可接受。这可以提供用于所需部件的更小的封装设计以减小成本。传统的观点指出这种结构将提供“低精度”传感器。实际上，通过对整个封装的细节的认真关注，已经发现直接固定敏感裸芯至封装衬底可以产生以更低成本制造的稳定，高精度传感器。
已经发现在一些情况中，可以使用更厚的氧化铝基陶瓷封装衬底，并且利用RTV，硅酮，环氧树脂或其他合适的粘合剂将压力敏感裸芯可被直接附连或胶合至衬底。在一些情况中，在敏感裸芯和封装衬底之间不提供中间隔绝层或衬底。通过整个封装的认真设计可以最小化热和机械应力。在一些情况中，用于补偿的ASIC电路可在压力敏感裸芯旁边被直接固定至封装衬底，并且可以使用直接的裸芯至裸芯的线接合以最小化封装尺寸和在更大封装中出现的相关机械应力。陶瓷衬底自身可以相对于它的表面面积是厚的以便提高稳定性。由塑料，聚酰胺，陶瓷或另一合适的材料制成的盖子可被附连至衬底的两侧上。不考虑端口和通风孔，这些盖子实际上可以是相同或类似的尺寸和形状，并且利用每一侧上相同的“覆盖区域”连接至衬底。可利用顺从（compliant）金属引线实现到封装的电连接，以便最小化封装和装配表面，比如印刷电路板之间的装配应力。
在一些情况中，传感器可以具有压阻式硅压力敏感裸芯，利用机载专用集成电路（ASIC）针对传感器偏差，灵敏度，温度效应和非线性对该裸芯进行校准和温度补偿。该传感器根据需要可被构造成测量绝对压力，压差和/或表压力。绝对版本可以具有内部真空（或其他压力）参考，并且提供与绝对压力成比例的输出值。压差版本可以准许对敏感裸芯的敏感隔膜的两侧应用压力。表压力版本和复合版本可以以大气压作参考，并且提供成与相对于大气压的压力变化成比例的输出。
在一些情况中，传感器封装的宽度和长度尺寸可分别为大约10mm，以及10mm或12.5 mm。材料可以包括高温硬塑料，陶瓷，聚酰胺或用于封装的盖子的其他合适的材料，氧化铝陶瓷或用于封装衬底的其他合适的材料，以及硅酮，软或硬环氧树脂，硅酮环氧树脂，RTV或用于粘合剂的其他合适的材料。在一些情况中，封装衬底可以是96%的氧化铝，99%的氧化铝，或其他合适百分比的氧化铝。可以预期，封装衬底可以根据需要是或包括其他合适材料。电子部件根据需要可以由陶瓷，硅，玻璃，金，焊料以及其他合适材料组成。
在一些情况中，传感器组件可以具有各种端口构造。图1a示出了传感器10，该所示传感器10具有盖子11和12，没有压力端口，但可以具有盖子11上的压力通风孔13。该传感器可以具有也可以不具有盖子12上的压力通风孔13。图1b示出了具有盖子11上的轴向压力端口14的传感器10。图1c示出了具有盖子11上的径向压力端口15的传感器10。图1d示出了具有盖子11上的轴向压力端口14和盖子12上的轴向压力端口14的传感器。图1e示出了具有盖子11上的径向压力端口15和盖子12上的径向压力端口15的传感器10。这些径向端口15在相同侧上。图1f示出了具有盖子11上的径向压力端口15和盖子12上的径向压力端口15的传感器10，但是这些径向端口可以在相对侧上。各个端口的组合可包含在传感器10中。图1a，1b和1e中的传感器10可以位于双列直插式封装（DIP）中。图1c，1d和1f中的传感器10可以位于单列直插式封装（SIP）中。DIP或SIP可以用于图1a到1f中的端口构造，或者任何其它端口构造。传感器10可以位于另一类型的封装中。
图2示出了显现出压力敏感裸芯21，封装衬底22和ASIC23的描述性传感器10的侧面剖视图。图3是示出了描述性的传感器封装衬底，压力敏感裸芯，专用集成电路，接合线，迹线导体和引线的立体图的示意图。可利用具有最佳厚度的粘合剂25，比如硅酮，RTV，硅酮-环氧树脂，软环氧树脂或正常的或硬环氧树脂，将压力敏感裸芯21附连至封装衬底22的侧面或表面24，其中最佳厚度产生裸芯21相对于衬底22的有效无应力约束。后两个粘合剂可以更适用于高压传感器10（例如超过200psi或14bar）。关于最佳厚度，粘合剂25的厚度可以足够厚以将裸芯21适当地粘着至衬底22，但是也不是厚到妨碍裸芯21的结合或隔膜。
在所述的例子中，在压力敏感裸芯21和封装衬底22的表面24之间不存在诸如玻璃衬底的隔绝层或衬底。与敏感裸芯21和衬底22相比，粘合剂25可以相对薄。敏感裸芯21和衬底22的温度膨胀系数可以是大约相同的，因为敏感裸芯21的材料是硅，并且封装衬底22的材料是氧化铝陶瓷。不需要付出特别的努力来选择用于敏感裸芯21和衬底22的彼此具有非常接近的温度膨胀系数的材料。敏感裸芯21和衬底22可以采用其它未于此陈述的那些材料。
需要指出，封装衬底22可以厚于典型和传统的封装衬底。封装衬底22可以具有例如1mm的厚度和10mm×10mm的表面积。这将导致以平方单位为单位的面积与以单位为单位的厚度的比率为100，或者以单位为单位的厚度与以平方单位为单位的面积的比率0.010。衬底的面积-厚度比率可被认为等于或小于100平方单位每线性单位。
敏感裸芯21可以具有形成在其外表面上的压阻式部件以检测敏感裸芯隔膜的挠曲从而指示横过裸芯21隔膜的压力区别。压阻式部件可以以惠斯通电桥形式与其他检测电路连接。
敏感裸芯21的面向衬底22的表面可由封装衬底的表面24密封，或者它可以面向贯通封装衬底22的孔26，如示出的。根据需要，该孔可穿过封装衬底22将待测压力传递至敏感裸芯21的隔膜。
在一些情况中，ASIC23可以附连至封装衬底22，有时利用粘合剂27连接。在一些情况中，粘合剂27可以具有与粘合剂25相同的成分，但这不是要求的。ASIC23可以是敏感裸芯21和用于封装衬底22外部连接的连接器或端子32之间的电接口和补偿电路。敏感裸芯21可以通过接合线28连接至ASIC23。ASIC23可以通过接合线29连接至封装衬底表面上的迹线导体31。迹线导体31可以与连接器，引线或端子32连接。接合线28和29以及迹线导体31可以减小敏感裸芯21，ASIC23和封装衬底22之间热和机械应力的传递。封装衬底22的外部连接器，引线或端子32可以是可变的，从而吸收衬底22和例如可装配传感器10的印刷电路板（未示出）之间的热和机械应力。
图4是示出了传感器衬底22的侧面剖视图，该传感器衬底22具有压力敏感裸芯21，专用集成电路23和盖子11，盖子11的压力端口14与敏感裸芯21和集成电路23位于衬底的相同侧。
图5是类似图4的示意图，除了示出：敏感裸芯21，集成电路23和具有通风孔13的盖子12在衬底22的与具有端口14的盖子11相对的侧面上。
在本说明书中，尽管以另一方式或时态陈述，一些物质本质上可以是推测的或预言性的。
尽管关于至少一个描述性的例子已经描述了公开的机构或方法。基于阅读本说明书，多个变型和修改将对本领域熟练技术人员显而易见。因此意图在于附加权利要求尽可能宽泛地被解释，考虑到现有技术，以便包括全部这种变型和修改。

Claims (10)

1. 一种压力检测机构，包括：
具有在第一侧面上的迹线导体的封装衬底（22）；
在没有中间隔绝层的条件下利用应力顺从粘合剂（25，27）直接附连至所述封装衬底的第一侧面的压力敏感裸芯（21）；
电连接至所述敏感裸芯，并被附连至所述封装衬底（22）的第一侧面的专用集成电路（23）；
位于所述压力敏感裸芯（21）和所述专用集成电路（23）上且附连至所述封装衬底（22）的第一侧面的第一盖子（11，12）；
附连至所述封装衬底（22）的第二侧面的第二盖子（11，12）；
其中：所述第一和第二盖子（11，12）具有沿着所述封装衬底（22）的相同覆盖区域；以及
将所述专用集成电路（23）电连接至所述迹线导体的线接合。
2. 根据权利要求1所述的压力检测机构，其中：
所述第一和第二盖子（11，12）在形状和尺寸上对称。
3. 根据权利要求1所述的压力检测机构，其中：
所述第一和第二盖子（11，12）在形状和尺寸上对称，除了压力端口或通风孔（13，14，15）。
4. 根据权利要求1所述的压力检测机构，其中：
所述封装衬底（22）包括氧化铝陶瓷材料。
5. 根据权利要求1所述的压力检测机构，其中：
所述压力检测机构进一步包括另一用于将所述压力敏感裸芯（21）电连接至所述专用集成电路（23）的线接合。
6. 根据权利要求1所述的压力检测机构，其中：
所述应力顺从粘合剂（25，27）包括硅酮材料，硅酮-环氧树脂材料以及环氧树脂材料中的一个或多个；以及
所述封装衬底（22）包括氧化铝陶瓷材料。
7. 根据权利要求1所述的压力检测机构，其中：
利用应力顺从粘合剂（25，27）分别将所述第一和第二盖子（11，12）装配在所述封装衬底（22）的第一和第二侧面上。
8. 根据权利要求1所述的压力检测机构，其中利用与所述应力顺从粘合剂（25，27）成分不同的粘合剂将所述专用集成电路（23）附连至所述封装衬底（22）的第一侧面。
9. 根据权利要求1所述的压力检测机构，其中所述第一盖子限定出封闭腔并且所述压力敏感裸芯（21）和所述专用集成电路（23）位于同一封闭腔中。
10. 根据权利要求1所述的压力检测机构，其中当利用应力顺从粘合剂（25，27）将所述压力敏感裸芯（21）直接附连至所述封装衬底的第一侧面时，所述封装衬底（22）在对应于所述压力敏感裸芯（21）的隔膜的区域中限定出孔。
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