CN101957245B - 具有不受约束的敏感裸芯的传感器封装组件 - Google Patents

具有不受约束的敏感裸芯的传感器封装组件 Download PDF

Info

Publication number
CN101957245B
CN101957245B CN201010270262.1A CN201010270262A CN101957245B CN 101957245 B CN101957245 B CN 101957245B CN 201010270262 A CN201010270262 A CN 201010270262A CN 101957245 B CN101957245 B CN 101957245B
Authority
CN
China
Prior art keywords
package substrate
naked core
substrate
stress
obedient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201010270262.1A
Other languages
English (en)
Other versions
CN101957245A (zh
Inventor
I·本特利
A·D·布拉德利
J·库克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Publication of CN101957245A publication Critical patent/CN101957245A/zh
Application granted granted Critical
Publication of CN101957245B publication Critical patent/CN101957245B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/148—Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10158—Shape being other than a cuboid at the passive surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

一种压力检测机构，具有压力敏感裸芯，可利用具有最佳厚度的粘合剂将裸芯被直接附连至氧化铝基衬底的表面。该粘合剂可以是应力顺从的，并且可以是硅酮，硅酮环-氧树脂，环氧树脂或任何其它合适的粘合剂材料的一个或多个。补偿和接口专用集成电路可被附连至封装衬底的表面。可利用接合线将压力敏感裸芯电连接至集成电路。可利用接合线将该集成电路电连接至封装衬底上的迹线导体，并且迹线导体可被连接至用于外部连接装配表面(例如印刷电路板)的应力顺从金属导体或引线。具有一个或多个压力端口或通风孔的硬塑料或类似材料的对称盖子可被附连至衬底的两侧。

Description

具有不受约束的敏感裸芯的传感器封装组件
本申请要求于2009年7月10日申请，名称为“SENSOR PACKAGEASSEMBLY HAVING AN UNCONSTRAINED SENSE DIE”的U.S.临时专利申请No.61/224,837的优先权。因此2009年7月10日申请的U.S.临时专利申请No.61/224,837通过引用并入本文。
背景技术
本申请涉及传感器，并且更具体地涉及传感器封装。
发明内容
本申请涉及传感器，并且更具体地涉及传感器封装。在一些情况中，所提供的传感器封装具有封装衬底，压力敏感裸芯有时利用适应顺从粘合剂被直接装配至封装衬底的表面以实现有效地不受约束的敏感裸芯。在一些情况中，封装衬底可以包括被电连接至一个或多个封装引线的一个或多个迹线和/或结合衬垫。该封装引线可以适用于表面装配传感器封装至比如印刷电路板等的装配表面。该封装引线可被布置成帮助提供衬底和装配表面之间顺从性的水平。
附图说明
图1a-1f是示出了用于描述性的传感器封装的各种端口和通风孔构造的示意图；
图2是示出了具有直接被装配至封装衬底的表面的压力敏感裸芯的描述性传感器的侧面剖视图的示意图；
图3是示出了描述性的传感器封装衬底，压力敏感裸芯，专用集成电路，接合线，迹线导体(trace conductor)和引线的立体图的示意图；
图4是示出了具有压力敏感裸芯，专用集成电路和装配于相同侧上的具有压力端口的盖子的描述性传感器衬底的侧面剖视图的示意图；
图5是类似图4的示意图，除了示出在衬底的与具有端口的盖子相对的侧面上的敏感裸芯，专用集成电路和具有通风孔的盖子。
具体实施方式
存在对低成本高精度压力传感器的长期存在的市场需要。在历史上，高精度传感器已经是复杂，制造昂贵的装置。
具体地，对于基于压阻式硅压力敏感裸芯的传感器，制造商已经利用许多不同的方法来使敏感元件与机械和热应力隔绝。已经使用了大的封装，恒温腔室以及最特别地使用了敏感裸芯元件和基底衬底或者更大传感器的封装之间的隔绝层。这些隔绝层通常是牢固地结合至硅敏感裸芯元件自身的下侧的一层或多层硅或玻璃。与敏感裸芯元件的结合通常是玻璃熔合或阳极结合。特殊玻璃常常用于紧密匹配硅敏感裸芯的热膨胀。
已经发现在一些情况中，敏感裸芯可被直接固定至封装衬底，没有任何中间隔绝层，同时在正常应力条件下性能仍可接受。这可以提供用于所需部件的更小的封装设计以减小成本。传统的观点指出这种结构将提供“低精度”传感器。实际上，通过对整个封装的细节的认真关注，已经发现直接固定敏感裸芯至封装衬底可以产生以更低成本制造的稳定，高精度传感器。
已经发现在一些情况中，可以使用更厚的氧化铝基陶瓷封装衬底，并且利用RTV，硅酮，环氧树脂或其他合适的粘合剂将压力敏感裸芯可被直接附连或胶合至衬底。在一些情况中，在敏感裸芯和封装衬底之间不提供中间隔绝层或衬底。通过整个封装的认真设计可以最小化热和机械应力。在一些情况中，用于补偿的ASIC电路可在压力敏感裸芯旁边被直接固定至封装衬底，并且可以使用直接的裸芯至裸芯的线接合以最小化封装尺寸和在更大封装中出现的相关机械应力。陶瓷衬底自身可以相对于它的表面面积是厚的以便提高稳定性。由塑料，聚酰胺，陶瓷或另一合适的材料制成的盖子可被附连至衬底的两侧上。不考虑端口和通风孔，这些盖子实际上可以是相同或类似的尺寸和形状，并且利用每一侧上相同的“覆盖区域”连接至衬底。可利用顺从(compliant)金属引线实现到封装的电连接，以便最小化封装和装配表面，比如印刷电路板之间的装配应力。
在一些情况中，传感器可以具有压阻式硅压力敏感裸芯，利用机载专用集成电路(ASIC)针对传感器偏差，灵敏度，温度效应和非线性对该裸芯进行校准和温度补偿。该传感器根据需要可被构造成测量绝对压力，压差和/或表压力。绝对版本可以具有内部真空(或其他压力)参考，并且提供与绝对压力成比例的输出值。压差版本可以准许对敏感裸芯的敏感隔膜的两侧应用压力。表压力版本和复合版本可以以大气压作参考，并且提供成与相对于大气压的压力变化成比例的输出。
在一些情况中，传感器封装的宽度和长度尺寸可分别为大约10mm，以及10mm或12.5mm。材料可以包括高温硬塑料，陶瓷，聚酰胺或用于封装的盖子的其他合适的材料，氧化铝陶瓷或用于封装衬底的其他合适的材料，以及硅酮，软或硬环氧树脂，硅酮环氧树脂，RTV或用于粘合剂的其他合适的材料。在一些情况中，封装衬底可以是96％的氧化铝，99％的氧化铝，或其他合适百分比的氧化铝。可以预期，封装衬底可以根据需要是或包括其他合适材料。电子部件根据需要可以由陶瓷，硅，玻璃，金，焊料以及其他合适材料组成。
在一些情况中，传感器组件可以具有各种端口构造。图1a示出了传感器10，该所示传感器10具有盖子11和12，没有压力端口，但可以具有盖子11上的压力通风孔13。该传感器可以具有也可以不具有盖子12上的压力通风孔13。图1b示出了具有盖子11上的轴向压力端口14的传感器10。图1c示出了具有盖子11上的径向压力端口15的传感器10。图1d示出了具有盖子11上的轴向压力端口14和盖子12上的轴向压力端口14的传感器。图1e示出了具有盖子11上的径向压力端口15和盖子12上的径向压力端口15的传感器10。这些径向端口15在相同侧上。图1f示出了具有盖子11上的径向压力端口15和盖子12上的径向压力端口15的传感器10，但是这些径向端口可以在相对侧上。各个端口的组合可包含在传感器10中。图1a，1b和1e中的传感器10可以位于双列直插式封装(DIP)中。图1c，1d和1f中的传感器10可以位于单列直插式封装(SIP)中。DIP或SIP可以用于图1a到1f中的端口构造，或者任何其它端口构造。传感器10可以位于另一类型的封装中。
图2示出了显现出压力敏感裸芯21，封装衬底22和ASIC23的描述性传感器10的侧面剖视图。图3是示出了描述性的传感器封装衬底，压力敏感裸芯，专用集成电路，接合线，迹线导体和引线的立体图的示意图。可利用具有最佳厚度的粘合剂25，比如硅酮，RTV，硅酮-环氧树脂，软环氧树脂或正常的或硬环氧树脂，将压力敏感裸芯21附连至封装衬底22的侧面或表面24，其中最佳厚度产生裸芯21相对于衬底22的有效无应力约束。后两个粘合剂可以更适用于高压传感器10(例如超过200psi或14bar)。关于最佳厚度，粘合剂25的厚度可以足够厚以将裸芯21适当地粘着至衬底22，但是也不是厚到妨碍裸芯21的结合或隔膜。
在所述的例子中，在压力敏感裸芯21和封装衬底22的表面24之间不存在诸如玻璃衬底的隔绝层或衬底。与敏感裸芯21和衬底22相比，粘合剂25可以相对薄。敏感裸芯21和衬底22的温度膨胀系数可以是大约相同的，因为敏感裸芯21的材料是硅，并且封装衬底22的材料是氧化铝陶瓷。不需要付出特别的努力来选择用于敏感裸芯21和衬底22的彼此具有非常接近的温度膨胀系数的材料。敏感裸芯21和衬底22可以采用其它未于此陈述的那些材料。
需要指出，封装衬底22可以厚于典型和传统的封装衬底。封装衬底22可以具有例如1mm的厚度和10mm×10mm的表面积。这将导致以平方单位为单位的面积与以单位为单位的厚度的比率为100，或者以单位为单位的厚度与以平方单位为单位的面积的比率0.010。衬底的面积-厚度比率可被认为等于或小于100平方单位每线性单位。
敏感裸芯21可以具有形成在其外表面上的压阻式部件以检测敏感裸芯隔膜的挠曲从而指示横过裸芯21隔膜的压力区别。压阻式部件可以以惠斯通电桥形式与其他检测电路连接。
敏感裸芯21的面向衬底22的表面可由封装衬底的表面24密封，或者它可以面向贯通封装衬底22的孔26，如示出的。根据需要，该孔可穿过封装衬底22将待测压力传递至敏感裸芯21的隔膜。
在一些情况中，ASIC23可以附连至封装衬底22，有时利用粘合剂27连接。在一些情况中，粘合剂27可以具有与粘合剂25相同的成分，但这不是要求的。ASIC23可以是敏感裸芯21和用于封装衬底22外部连接的连接器或端子32之间的电接口和补偿电路。敏感裸芯21可以通过接合线28连接至ASIC23。ASIC23可以通过接合线29连接至封装衬底表面上的迹线导体31。迹线导体31可以与连接器，引线或端子32连接。接合线28和29以及迹线导体31可以减小敏感裸芯21，ASIC23和封装衬底22之间热和机械应力的传递。封装衬底22的外部连接器，引线或端子32可以是可变的，从而吸收衬底22和例如可装配传感器10的印刷电路板(未示出)之间的热和机械应力。
图4是示出了传感器衬底22的侧面剖视图，该传感器衬底22具有压力敏感裸芯21，专用集成电路23和盖子11，盖子11的压力端口14与敏感裸芯21和集成电路23位于衬底的相同侧。
图5是类似图4的示意图，除了示出：敏感裸芯21，集成电路23和具有通风孔13的盖子12在衬底22的与具有端口14的盖子11相对的侧面上。
在本说明书中，尽管以另一方式或时态陈述，一些物质本质上可以是推测的或预言性的。
尽管关于至少一个描述性的例子已经描述了公开的机构或方法。基于阅读本说明书，多个变型和修改将对本领域熟练技术人员显而易见。因此意图在于附加权利要求尽可能宽泛地被解释，考虑到现有技术，以便包括全部这种变型和修改。

Claims (9)

1.一种压力传感器，包括：
封装衬底(22)；
利用应力顺从粘合剂(25，27)直接附连至所述封装衬底的第一侧面的压力敏感裸芯(21)；
电连接至所述敏感裸芯，并被附连至所述封装衬底的第一侧面的专用集成电路(23)；
装配于所述衬底的第一侧面上的盖子(11，12)；以及
用于将所述压力敏感裸芯(21)电连接至所述专用集成电路(23)的线接合(28，29)；以及
其中所述封装衬底(22)具有小于100平方单位每线性单位的面积-厚度比率。
2.一种压力检测机构，包括：
封装衬底(22)；
利用应力顺从粘合剂(25，27)直接附连至所述封装衬底的第一侧面的压力敏感裸芯(21)；
电连接至所述敏感裸芯，并被附连至所述封装衬底的第一侧面的专用集成电路(23)；
装配于所述衬底的第一侧面上的第一盖子(11，12)；以及
装配于所述衬底的第二侧面上的第二盖子(11，12)，
其中所述封装衬底(22)具有小于100平方单位每线性单位的面积-厚度比率。
3.权利要求2的机构，进一步包括：
附连至所述封装衬底(22)的应力顺从金属引线(32)；
在所述封装衬底的第一侧上的迹线导体(31)电连接至所述金属引线(32)；
用于将所述压力敏感裸芯(21)电连接至专用集成电路(23)的第一线接合(28，29)；以及
用于将专用集成电路电连接至迹线导体(31)的第二线接合(28，29)。
4.权利要求2的机构，其中：
所述应力顺从粘合剂(25，27)包括硅酮材料，硅酮-环氧树脂材料以及环氧树脂材料中的一个或多个；以及
所述封装衬底(22)包括氧化铝陶瓷材料。
5.权利要求2的机构，其中：
所述第一和第二盖子(11，12)具有沿着所述封装衬底的相同覆盖区域；以及
所述第一和第二盖子(11，12)在形状和尺寸上对称，除了至少一个盖子(11，12)上的压力端口或通风孔(13，14，15)。
6.权利要求2的机构，其中利用应力顺从粘合剂(25，27)分别将所述第一和第二盖子(11，12)装配在所述衬底的第一和第二侧面上。
7.权利要求2的机构，其中所述压力敏感裸芯(21)包括一个或多个惠斯通电桥压阻式应力敏感元件。
8.权利要求2的机构，其中应力顺从粘合剂(25，27)是所述压力敏感裸芯(21)和所述封装衬底(22)之间的唯一物质。
9.一种压力检测机构，包括：
封装衬底(22)；
附连至所述封装衬底(22)的第一侧面的压力敏感裸芯(21)；以及
其中利用应力顺从粘合剂(25，27)将所述压力敏感裸芯直接附连至所述封装衬底的第一侧面，
其中所述封装衬底(22)具有小于100平方单位每线性单位的面积-厚度比率。
CN201010270262.1A 2009-07-10 2010-07-09 具有不受约束的敏感裸芯的传感器封装组件 Active CN101957245B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US22483709P 2009-07-10 2009-07-10
US61/224837 2009-07-10
US12/828155 2010-06-30
US12/828,155 US8322225B2 (en) 2009-07-10 2010-06-30 Sensor package assembly having an unconstrained sense die

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201410342824.7A Division CN104132773A (zh) 2009-07-10 2010-07-09 压力检测机构

Publications (2)

Publication Number Publication Date
CN101957245A CN101957245A (zh) 2011-01-26
CN101957245B true CN101957245B (zh) 2014-09-17

Family

ID=42936346

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201010270262.1A Active CN101957245B (zh) 2009-07-10 2010-07-09 具有不受约束的敏感裸芯的传感器封装组件
CN201410342824.7A Pending CN104132773A (zh) 2009-07-10 2010-07-09 压力检测机构

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201410342824.7A Pending CN104132773A (zh) 2009-07-10 2010-07-09 压力检测机构

Country Status (3)

Country Link
US (1) US8322225B2 (zh)
EP (1) EP2273247A3 (zh)
CN (2) CN101957245B (zh)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8322225B2 (en) 2009-07-10 2012-12-04 Honeywell International Inc. Sensor package assembly having an unconstrained sense die
US8230743B2 (en) 2010-08-23 2012-07-31 Honeywell International Inc. Pressure sensor
US8297127B2 (en) * 2011-01-07 2012-10-30 Honeywell International Inc. Pressure sensor with low cost packaging
US8770034B2 (en) * 2011-09-06 2014-07-08 Honeywell International Inc. Packaged sensor with multiple sensors elements
US8811636B2 (en) 2011-11-29 2014-08-19 Qualcomm Mems Technologies, Inc. Microspeaker with piezoelectric, metal and dielectric membrane
CN102680159B (zh) * 2012-05-24 2013-12-04 柯远珍 一种传感器
US9470593B2 (en) * 2013-09-12 2016-10-18 Honeywell International Inc. Media isolated pressure sensor
US9593995B2 (en) * 2014-02-28 2017-03-14 Measurement Specialties, Inc. Package for a differential pressure sensing die
US9316552B2 (en) * 2014-02-28 2016-04-19 Measurement Specialties, Inc. Differential pressure sensing die
KR20170036081A (ko) * 2014-08-01 2017-03-31 칼 프로이덴베르크 카게 센서, 센서를 포함하는 필터 소자 및 이러한 유형의 필터 소자의 용도
CN104729770B (zh) * 2015-02-16 2017-12-05 福建上润精密仪器有限公司 一种硅片和金属基座的无应力组合方法及其结构
US9963341B2 (en) 2015-05-19 2018-05-08 Rosemount Aerospace, Inc. Pressure sensor package with stress isolation features
US20170089792A1 (en) * 2015-09-28 2017-03-30 Merit Medical Systems, Inc. Dampened pressure port
DE102016003657A1 (de) * 2016-03-30 2017-10-05 Hella Kgaa Hueck & Co. Vorrichtung zum Messen eines Füllstands einer Flüssigkeit
US10466125B2 (en) * 2016-11-11 2019-11-05 Measurement Specialties Inc. Pressure sensor sub assembly and fabrication
US10036676B1 (en) * 2017-03-15 2018-07-31 Honeywell International Inc. Microelectromechanical systems (MEMS) force die with buried cavity vented to the edges
US10640374B2 (en) * 2017-05-18 2020-05-05 Dunan Microstaq, Inc. Method and structure of attachment layer for reducing stress transmission to attached MEMS die
US10407298B2 (en) * 2017-07-28 2019-09-10 Advanced Semiconductor Engineering Korea, Inc. Microelectromechanical systems and method of manufacturing the same
US11225409B2 (en) 2018-09-17 2022-01-18 Invensense, Inc. Sensor with integrated heater
US10830653B2 (en) 2019-03-27 2020-11-10 Honeywell International Inc. Noninvasive blood pressure sensor
US11156522B2 (en) 2019-03-29 2021-10-26 Honeywell International Inc. Radial seal for disposable force sensor
US11118990B2 (en) * 2019-06-21 2021-09-14 Honeywell International Inc. Micro-molded fluid pressure sensor housing
TWI738044B (zh) * 2019-08-29 2021-09-01 新唐科技股份有限公司 感測器以及積體電路模組
CN215924387U (zh) * 2020-07-08 2022-03-01 瑞声科技（南京）有限公司 一种mems传感器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5438876A (en) * 1993-08-05 1995-08-08 The Foxboro Company Modular diaphragm pressure sensor with peripheral mounted electrical terminals
CN1112236A (zh) * 1994-04-04 1995-11-22 莫托罗拉公司 带有气密封接的应力隔绝座以保护传感器芯的压力传感器
CN101044380A (zh) * 2004-08-23 2007-09-26 霍尼韦尔国际公司 使用背面检测和单个专用集成电路的压差测量

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0197130A1 (en) 1984-10-12 1986-10-15 Ametek, Inc. Pressure transducer
IL82960A0 (en) 1986-06-30 1987-12-20 Rosemount Inc Differential pressure sensor
US4942383A (en) * 1989-03-06 1990-07-17 Honeywell Inc. Low cost wet-to-wet pressure sensor package
US4990462A (en) * 1989-04-12 1991-02-05 Advanced Micro Devices, Inc. Method for coplanar integration of semiconductor ic devices
US5225373A (en) * 1990-03-07 1993-07-06 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor pressure sensor device with two semiconductor pressure sensor chips
US5257547A (en) * 1991-11-26 1993-11-02 Honeywell Inc. Amplified pressure transducer
US5327785A (en) * 1993-03-09 1994-07-12 Honeywell Inc. Pressure sensor with improved heat dissipation characteristics
US5738731A (en) * 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
US5438877A (en) * 1994-06-13 1995-08-08 Motorola, Inc. Pressure sensor package for reducing stress-induced measurement error
US5410916A (en) * 1994-06-24 1995-05-02 Honeywell Inc. Flowthrough pressure sensor
US6148673A (en) * 1994-10-07 2000-11-21 Motorola, Inc. Differential pressure sensor and method thereof
US5644285A (en) * 1995-02-01 1997-07-01 Honeywell Inc. Pressure transducer with media isolation
US5969259A (en) * 1995-04-07 1999-10-19 Sensym, Inc. Side port package for micromachined fluid sensor
US6691581B2 (en) * 1995-05-25 2004-02-17 Kulite Semiconductor Products, Inc. Pressure transducer fabricated from beta silicon carbide
JPH0992670A (ja) 1995-09-27 1997-04-04 Omron Corp センサ装置の構造およびその構造を実現するための実装方法
US7744122B2 (en) * 1995-12-12 2010-06-29 Automotive Technologies International, Inc. Driver side aspirated airbags
US5928968A (en) * 1997-12-22 1999-07-27 Vlsi Technology, Inc. Semiconductor pressure transducer structures and methods for making the same
JP2000022172A (ja) * 1998-06-30 2000-01-21 Matsushita Electric Ind Co Ltd 変換装置及びその製造方法
DE19840829B4 (de) * 1998-09-07 2005-10-20 Siemens Ag Verfahren zum Befestigen eines mikromechanischen Sensors in einem Gehäuse und Sensoranordnung
US6209398B1 (en) * 1998-09-18 2001-04-03 Texas Instruments Incorporated Fluid pressure transducer apparatus and method for assembling
US6058782A (en) * 1998-09-25 2000-05-09 Kulite Semiconductor Products Hermetically sealed ultra high temperature silicon carbide pressure transducers and method for fabricating same
US7624632B1 (en) * 1999-08-17 2009-12-01 Lockheed Martin Corporation Constant-temperature-difference flow sensor, and integrated flow, temperature, and pressure sensor
US6732588B1 (en) * 1999-09-07 2004-05-11 Sonionmems A/S Pressure transducer
US6143673A (en) * 1999-10-01 2000-11-07 Taiwan Semiconductor Manufacturing Company Method for forming gap filling silicon oxide intermetal dielectric (IMD) layer formed employing ozone-tEOS
US6577224B2 (en) * 2001-03-22 2003-06-10 Kulite Semiconductor Products, Inc. Ultra high pressure transducers
US6979872B2 (en) * 2003-05-13 2005-12-27 Rockwell Scientific Licensing, Llc Modules integrating MEMS devices with pre-processed electronic circuitry, and methods for fabricating such modules
ITTO20030444A1 (it) * 2003-06-13 2004-12-14 Olivetti Jet Spa Sensore di pressione a struttura integrata.
DE10342368A1 (de) * 2003-09-12 2005-04-28 Siemens Ag Druckmessumformer
US7024937B2 (en) * 2003-12-03 2006-04-11 Honeywell International Inc. Isolated pressure transducer
JP2007532865A (ja) * 2004-02-09 2007-11-15 ローベルト　ボツシユ　ゲゼルシヤフト　ミツト　ベシユレンクテル　ハフツング 圧力センサのための腐食保護
FI115487B (fi) * 2004-05-03 2005-05-13 Vti Technologies Oy Menetelmä kapasitiivisen paineanturin valmistamiseksi ja kapasitiivinen paineanturi
CN101088000B (zh) * 2004-08-23 2010-11-10 霍尼韦尔国际公司 绝对压力检测系统及方法
US7343080B2 (en) * 2004-09-27 2008-03-11 Idc, Llc System and method of testing humidity in a sealed MEMS device
US7290453B2 (en) * 2004-12-28 2007-11-06 Amnon Brosh Composite MEMS pressure sensor configuration
US7538401B2 (en) * 2005-05-03 2009-05-26 Rosemount Aerospace Inc. Transducer for use in harsh environments
US20070013014A1 (en) 2005-05-03 2007-01-18 Shuwen Guo High temperature resistant solid state pressure sensor
US7400042B2 (en) * 2005-05-03 2008-07-15 Rosemount Aerospace Inc. Substrate with adhesive bonding metallization with diffusion barrier
US7243552B2 (en) * 2005-05-09 2007-07-17 Delphi Technologies, Inc. Pressure sensor assembly
US7562573B2 (en) * 2005-07-21 2009-07-21 Evigia Systems, Inc. Integrated sensor and circuitry and process therefor
US7622782B2 (en) * 2005-08-24 2009-11-24 General Electric Company Pressure sensors and methods of making the same
US7411293B2 (en) * 2005-09-27 2008-08-12 Kingston Technology Corporation Flash memory card
US7162927B1 (en) * 2005-12-16 2007-01-16 Honeywell International Inc. Design of a wet/wet amplified differential pressure sensor based on silicon piezoresistive technology
US7462831B2 (en) * 2006-01-26 2008-12-09 L-3 Communications Corporation Systems and methods for bonding
US20070238215A1 (en) * 2006-04-07 2007-10-11 Honeywell International Inc. Pressure transducer with increased sensitivity
US7478562B2 (en) * 2006-05-05 2009-01-20 Kulite Semiconductor Products, Inc. High temperature LC pressure transducer and methods for making the same
KR100807193B1 (ko) * 2006-09-08 2008-02-28 한국과학기술원 정전용량형 압력센서의 제조방법 및 이에 의해 제조된정전용량형 압력센서
US7654155B2 (en) * 2006-09-19 2010-02-02 Weatherford/Lamb, Inc. Wet-gas flowmeter
US7430918B2 (en) * 2006-12-04 2008-10-07 Honeywell International Inc. Amplified flow through pressure sensor
US20080290494A1 (en) * 2007-05-21 2008-11-27 Markus Lutz Backside release and/or encapsulation of microelectromechanical structures and method of manufacturing same
US7434474B1 (en) * 2007-07-13 2008-10-14 Honeywell International Inc. Hermetic attachment method for pressure sensors
US7647835B2 (en) * 2007-09-19 2010-01-19 Honeywell International Inc. Pressure sensor stress isolation pedestal
US7677109B2 (en) * 2008-02-27 2010-03-16 Honeywell International Inc. Pressure sense die pad layout and method for direct wire bonding to programmable compensation integrated circuit die
US20090288484A1 (en) * 2008-05-21 2009-11-26 Honeywell International Inc. Integrated mechanical package design for combi sensor apparatus
US7826267B2 (en) * 2008-05-23 2010-11-02 Silicon Storage Technology, Inc. Method and apparatus for reading and programming a non-volatile memory cell in a virtual ground array
US8297125B2 (en) * 2008-05-23 2012-10-30 Honeywell International Inc. Media isolated differential pressure sensor with cap
US8164007B2 (en) * 2008-07-16 2012-04-24 Honeywell International Conductive elastomeric seal and method of fabricating the same
US8230745B2 (en) * 2008-11-19 2012-07-31 Honeywell International Inc. Wet/wet differential pressure sensor based on microelectronic packaging process
US7966887B2 (en) * 2009-03-26 2011-06-28 General Electric Company High temperature optical pressure sensor and method of fabrication of the same
US8189301B2 (en) * 2009-04-24 2012-05-29 Magnecomp Corporation Wireless microactuator motor assembly for use in a hard disk drive suspension, and mechanical and electrical connections thereto
US7861595B2 (en) * 2009-05-11 2011-01-04 Honeywell International Inc. Pressure sensing device for harsh environments
US8322225B2 (en) 2009-07-10 2012-12-04 Honeywell International Inc. Sensor package assembly having an unconstrained sense die
US8065917B1 (en) * 2010-05-18 2011-11-29 Honeywell International Inc. Modular pressure sensor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5438876A (en) * 1993-08-05 1995-08-08 The Foxboro Company Modular diaphragm pressure sensor with peripheral mounted electrical terminals
US5522267A (en) * 1993-08-05 1996-06-04 The Foxboro Company Modular diaphragm pressure sensor with peripherally mounted electrical terminals
CN1112236A (zh) * 1994-04-04 1995-11-22 莫托罗拉公司 带有气密封接的应力隔绝座以保护传感器芯的压力传感器
CN101044380A (zh) * 2004-08-23 2007-09-26 霍尼韦尔国际公司 使用背面检测和单个专用集成电路的压差测量

Also Published As

Publication number Publication date
CN101957245A (zh) 2011-01-26
CN104132773A (zh) 2014-11-05
EP2273247A3 (en) 2016-07-27
US8322225B2 (en) 2012-12-04
EP2273247A2 (en) 2011-01-12
US20110005326A1 (en) 2011-01-13

Similar Documents

Publication Publication Date Title
CN101957245B (zh) 具有不受约束的敏感裸芯的传感器封装组件
US8276460B2 (en) Packaging for chip-on-board pressure sensor
US6255728B1 (en) Rigid encapsulation package for semiconductor devices
US8230743B2 (en) Pressure sensor
US7162927B1 (en) Design of a wet/wet amplified differential pressure sensor based on silicon piezoresistive technology
US7930944B2 (en) ASIC compensated pressure sensor with soldered sense die attach
US7107854B1 (en) Media isolated absolute pressure sensor
EP2316008B1 (en) Sensor device packaging and corresponding method
US8230745B2 (en) Wet/wet differential pressure sensor based on microelectronic packaging process
US7377177B1 (en) Pressure sensor method and apparatus
KR102475006B1 (ko) 유체 매체의 압력 검출 장치, 및 상기 장치의 제조 방법
CN102980711A (zh) 具有多个传感器元件的封装的传感器
WO2016017299A1 (ja) 回路基板の実装構造、それを用いたセンサ
CN105008867A (zh) 具有陶瓷的壳体的传感器系统
JP2009282015A (ja) 圧力センサモジュール及び電子部品
EP2910919A1 (en) Pressure sensing device and method for manufacturing such a device
CN210243053U (zh) 基于倒装焊芯片的压力传感器芯体和压力传感器
US6543292B1 (en) Piezoresistive air pressure sensor
JPH06207870A (ja) 半導体圧力センサ
JP2017142169A (ja) 圧力センサ及びその製造方法
CN219044842U (zh) 一种mems传感器封装结构
JP4218558B2 (ja) 圧力センサ
JP2023038631A (ja) 耐塵埃／耐ノイズ構造を有するセンサ
JP2009075057A (ja) 絶対圧測定用圧力センサ
JP2008122135A (ja) 圧力センサ装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant