JP2020141112A - 気相成長装置 - Google Patents
気相成長装置 Download PDFInfo
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- JP2020141112A JP2020141112A JP2019037984A JP2019037984A JP2020141112A JP 2020141112 A JP2020141112 A JP 2020141112A JP 2019037984 A JP2019037984 A JP 2019037984A JP 2019037984 A JP2019037984 A JP 2019037984A JP 2020141112 A JP2020141112 A JP 2020141112A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
- C30B23/063—Heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
- C30B25/165—Controlling or regulating the flow of the reactive gases
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
第1の実施形態の気相成長装置は、反応室と、反応室の上に設けられ、プロセスガスが導入されるガス室と、ガス室から反応室にプロセスガスを供給し、所定の長さを有する複数のガス導管と、複数のガス導管のうちの少なくとも一つのガス導管の上側に挿入される調整導管を備え、調整導管は、上端部の外周に設けられた環状の凸部を有し、ガス導管から取り外し可能である。
第2の実施形態の気相成長装置は、ガス導管及び調整導管の形状が異なる点で、第1の実施形態の気相成長装置と異なっている。以下、第1の実施形態と重複する内容については記述を一部省略する。
第3の実施形態の気相成長装置は、ガス室が1つである点で、第1の実施形態の気相成長装置と異なっている。以下、第1の実施形態と重複する内容については記述を一部省略する。
11 第1のバッファ室(ガス室)
12 第2のバッファ室
13 バッファ室(ガス室)
14 サセプタ
16 回転体
18 回転軸
20 回転駆動機構
22 第1のヒータ
28 リフレクタ
30 支持柱
32 固定台
34 固定軸
36 第1の仕切り板
37 第2の仕切り板
39 仕切り板
40 フード
42 第2のヒータ
44 ガス排出口
51 第1のガス導管
51a 円筒部
51b フランジ
52 第1の調整導管
52a 円筒部(部分)
52b フランジ(凸部)
56 ガス導管
57 調整導管
61 第2のガス導管
62 第2の調整導管
81 第1のガス供給口
82 第2のガス供給口
85 ガス供給口
100 気相成長装置
300 気相成長装置
CP 接触面
G0 プロセスガス
G1 第1のプロセスガス(プロセスガス)
G2 第2のプロセスガス
W ウェハ(基板)
L1 第1の長さ(所定の長さ)
L2 第2の長さ
L3 第3の長さ
L4 第4の長さ
S1 第1の開口断面積
S2 第2の開口断面積
S3 第3の開口断面積
S4 第4の開口断面積
d1 第1の距離(所定の距離)
d2 第2の距離
Claims (5)
- 反応室と、
前記反応室の上に設けられ、プロセスガスが導入されるガス室と、
前記ガス室から前記反応室に前記プロセスガスを供給し、所定の長さを有する複数のガス導管と、
前記複数のガス導管のうちの少なくとも一つのガス導管の上側に挿入される調整導管を備え、
前記調整導管は、上端部の外周に設けられた環状の凸部を有し、前記ガス導管から取り外し可能である、
気相成長装置。 - 前記調整導管の前記ガス導管に挿入された部分と前記ガス導管は、前記ガス導管の直径方向に所定の距離をおいて離間している請求項1記載の気相成長装置。
- 前記所定の距離は0.5mm以上5mm以下である請求項2記載の気相成長装置。
- 前記調整導管の下端と前記調整導管が挿入された前記ガス導管の下端との距離は、前記所定の長さの2分の1以上である請求項1ないし請求項3いずれか一項記載の気相成長装置。
- 前記ガス導管の材料と前記調整導管の材料とが異なる請求項1ないし請求項4いずれか一項記載の気相成長装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019037984A JP7152970B2 (ja) | 2019-03-01 | 2019-03-01 | 気相成長装置 |
CN202080008842.5A CN113287188B (zh) | 2019-03-01 | 2020-01-23 | 气相生长装置 |
EP20766136.4A EP3933888A4 (en) | 2019-03-01 | 2020-01-23 | VAPOR GROWTH APPARATUS |
PCT/JP2020/002358 WO2020179272A1 (ja) | 2019-03-01 | 2020-01-23 | 気相成長装置 |
TW109104401A TWI743679B (zh) | 2019-03-01 | 2020-02-12 | 氣相成長裝置 |
US17/411,829 US20210381128A1 (en) | 2019-03-01 | 2021-08-25 | Vapor phase growth apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019037984A JP7152970B2 (ja) | 2019-03-01 | 2019-03-01 | 気相成長装置 |
Publications (3)
Publication Number | Publication Date |
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JP2020141112A true JP2020141112A (ja) | 2020-09-03 |
JP2020141112A5 JP2020141112A5 (ja) | 2022-02-18 |
JP7152970B2 JP7152970B2 (ja) | 2022-10-13 |
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JP2019037984A Active JP7152970B2 (ja) | 2019-03-01 | 2019-03-01 | 気相成長装置 |
Country Status (6)
Country | Link |
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US (1) | US20210381128A1 (ja) |
EP (1) | EP3933888A4 (ja) |
JP (1) | JP7152970B2 (ja) |
CN (1) | CN113287188B (ja) |
TW (1) | TWI743679B (ja) |
WO (1) | WO2020179272A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4261870A1 (en) | 2020-12-14 | 2023-10-18 | NuFlare Technology, Inc. | Vapor-phase growth apparatus and vapor-phase growth method |
WO2022130926A1 (ja) * | 2020-12-14 | 2022-06-23 | 株式会社ニューフレアテクノロジー | 気相成長装置及び気相成長方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01257321A (ja) * | 1988-04-07 | 1989-10-13 | Fujitsu Ltd | 気相成長装置 |
US20050103267A1 (en) * | 2003-11-14 | 2005-05-19 | Hur Gwang H. | Flat panel display manufacturing apparatus |
JP2011114081A (ja) * | 2009-11-25 | 2011-06-09 | Sharp Corp | 気相成長装置 |
JP2017157678A (ja) * | 2016-03-01 | 2017-09-07 | 株式会社ニューフレアテクノロジー | 成膜装置 |
Family Cites Families (13)
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US20020069970A1 (en) * | 2000-03-07 | 2002-06-13 | Applied Materials, Inc. | Temperature controlled semiconductor processing chamber liner |
US7510624B2 (en) * | 2004-12-17 | 2009-03-31 | Applied Materials, Inc. | Self-cooling gas delivery apparatus under high vacuum for high density plasma applications |
JP4451455B2 (ja) * | 2006-02-21 | 2010-04-14 | 株式会社ニューフレアテクノロジー | 気相成長装置及び支持台 |
US8440049B2 (en) * | 2006-05-03 | 2013-05-14 | Applied Materials, Inc. | Apparatus for etching high aspect ratio features |
JP5463536B2 (ja) * | 2006-07-20 | 2014-04-09 | 北陸成型工業株式会社 | シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法 |
US9328417B2 (en) * | 2008-11-01 | 2016-05-03 | Ultratech, Inc. | System and method for thin film deposition |
KR20120066991A (ko) * | 2010-12-15 | 2012-06-25 | 주식회사 원익아이피에스 | 샤워헤드 및 이를 구비한 진공처리장치 |
TWI473903B (zh) * | 2013-02-23 | 2015-02-21 | Hermes Epitek Corp | 應用於半導體設備的噴射器與上蓋板總成 |
US9328420B2 (en) * | 2013-03-14 | 2016-05-03 | Sunedison Semiconductor Limited (Uen201334164H) | Gas distribution plate for chemical vapor deposition systems and methods of using same |
JP5800957B1 (ja) * | 2014-06-17 | 2015-10-28 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体 |
JP6499493B2 (ja) * | 2015-04-10 | 2019-04-10 | 株式会社ニューフレアテクノロジー | 気相成長方法 |
JP6718730B2 (ja) * | 2016-04-19 | 2020-07-08 | 株式会社ニューフレアテクノロジー | シャワープレート、気相成長装置及び気相成長方法 |
JP7365761B2 (ja) * | 2018-08-24 | 2023-10-20 | 株式会社ニューフレアテクノロジー | 気相成長装置 |
-
2019
- 2019-03-01 JP JP2019037984A patent/JP7152970B2/ja active Active
-
2020
- 2020-01-23 WO PCT/JP2020/002358 patent/WO2020179272A1/ja active Application Filing
- 2020-01-23 CN CN202080008842.5A patent/CN113287188B/zh active Active
- 2020-01-23 EP EP20766136.4A patent/EP3933888A4/en active Pending
- 2020-02-12 TW TW109104401A patent/TWI743679B/zh active
-
2021
- 2021-08-25 US US17/411,829 patent/US20210381128A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01257321A (ja) * | 1988-04-07 | 1989-10-13 | Fujitsu Ltd | 気相成長装置 |
US20050103267A1 (en) * | 2003-11-14 | 2005-05-19 | Hur Gwang H. | Flat panel display manufacturing apparatus |
JP2011114081A (ja) * | 2009-11-25 | 2011-06-09 | Sharp Corp | 気相成長装置 |
JP2017157678A (ja) * | 2016-03-01 | 2017-09-07 | 株式会社ニューフレアテクノロジー | 成膜装置 |
Also Published As
Publication number | Publication date |
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EP3933888A1 (en) | 2022-01-05 |
CN113287188A (zh) | 2021-08-20 |
JP7152970B2 (ja) | 2022-10-13 |
US20210381128A1 (en) | 2021-12-09 |
EP3933888A4 (en) | 2022-11-23 |
TW202033847A (zh) | 2020-09-16 |
TWI743679B (zh) | 2021-10-21 |
CN113287188B (zh) | 2023-12-22 |
WO2020179272A1 (ja) | 2020-09-10 |
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