JP2020113744A - Cutting blade and cutting device using the same - Google Patents
Cutting blade and cutting device using the same Download PDFInfo
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- JP2020113744A JP2020113744A JP2019181352A JP2019181352A JP2020113744A JP 2020113744 A JP2020113744 A JP 2020113744A JP 2019181352 A JP2019181352 A JP 2019181352A JP 2019181352 A JP2019181352 A JP 2019181352A JP 2020113744 A JP2020113744 A JP 2020113744A
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- 238000005520 cutting process Methods 0.000 title claims abstract description 131
- 239000000463 material Substances 0.000 claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 17
- 239000010432 diamond Substances 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 230000008878 coupling Effects 0.000 claims description 23
- 238000010168 coupling process Methods 0.000 claims description 23
- 238000005859 coupling reaction Methods 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 7
- 238000005219 brazing Methods 0.000 claims description 6
- 238000005476 soldering Methods 0.000 claims description 6
- 239000007767 bonding agent Substances 0.000 claims description 2
- 230000007547 defect Effects 0.000 abstract description 4
- 239000003985 ceramic capacitor Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000005498 polishing Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000004308 accommodation Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D1/00—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor
- B26D1/0006—Cutting members therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
- B26D7/26—Means for mounting or adjusting the cutting member; Means for adjusting the stroke of the cutting member
- B26D7/2614—Means for mounting the cutting member
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D1/00—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor
- B26D1/0006—Cutting members therefor
- B26D2001/002—Materials or surface treatments therefor, e.g. composite materials
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Forests & Forestry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mining & Mineral Resources (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Dicing (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Nonmetal Cutting Devices (AREA)
Abstract
Description
本発明は切断用ブレード及びこれを用いた切断装置に係り、より詳しくはＭＬＣＣ（Ｍｕｌｔｉ−Ｌａｙｅｒ Ｃｅｒａｍｉｃ Ｃｏｎｄｅｎｓｅｒ）を含む半導体部品の製造のための切断用ブレード及びこれを用いた切断装置に関する。 The present invention relates to a cutting blade and a cutting device using the same, and more particularly to a cutting blade for manufacturing a semiconductor component including an MLCC (Multi-Layer Ceramic Condenser) and a cutting device using the same.
スマートフォンや電気自動車が開発されるにつれて、その部品として使われる積層セラミックコンデンサーやチップインダクタのような部品は、高機能化、軽量化及び小型化している。特に、キャパシタを多層に積層するＭＬＣＣ（多層セラミックコンデンサー、Ｍｕｌｔｉ−Ｌａｙｅｒ Ｃｅｒａｍｉｃ Ｃｏｎｄｅｎｓｅｒ（又はＣａｐａｃｉｔｏｒ））はその積層数も増加し、小型化が同時に進んでいる。ＭＬＣＣは広く積層された板状に製造される過程の後、ＭＬＣＣ素材をブレードを有する切断装置で所望の大きさに切断することにより、完成部品に製造される。積層数の増加及び小型化が進むにつれて、ＭＬＣＣを切断するために、ブレードの素材は硬度の向上した超硬合金素材を用いる。 With the development of smartphones and electric vehicles, components such as monolithic ceramic capacitors and chip inductors used as components thereof have become highly functional, lightweight and miniaturized. In particular, the number of MLCCs (multi-layer ceramic capacitors, Multi-Layer Ceramic Condensers (or Capacitors)) in which capacitors are laminated in multiple layers is increasing, and miniaturization is progressing at the same time. The MLCC is manufactured into a finished part by cutting the MLCC material into a desired size with a cutting device having a blade after a process of manufacturing the MLCC into a widely laminated plate shape. As the number of laminated layers increases and the miniaturization progresses, a cemented carbide material having an improved hardness is used as a material for the blade in order to cut the MLCC.
しかし、ＭＬＣＣの積層数の増加及び小型化が高度化するにつれて、超硬合金からなるブレードでＭＬＣＣ素材を切断する場合、切断面の均一性向上や層間電気伝導などの不良率の低下に対する要求が増加することになり、ブレードの使用時間も問題になって長期間使用の可能なブレードに対する必要性が高くなっている。よって、切断力が改善された超高硬度のブレードが要求される。 However, as the number of stacked MLCCs increases and the miniaturization becomes more advanced, when cutting an MLCC material with a blade made of cemented carbide, there is a demand for improving the uniformity of the cut surface and reducing the defect rate such as interlayer electrical conduction. As the number of blades increases, the use time of the blades becomes a problem, and there is an increasing need for blades that can be used for a long period of time. Therefore, an ultra-high hardness blade with improved cutting force is required.
高度化したＭＬＣＣの切断用に超硬合金の１０倍程度の硬度を有するＰＣＤ（Ｐｏｌｙｃｒｙｓｔａｌｌｉｎｅ Ｄｉａｍｏｎｄ）素材を用いて刃を開発している。一方法として、ＰＣＤ（Ｐｏｌｙｃｒｙｓｔａｌｌｉｎｅ Ｄｉａｍｏｎｄ）素材のブレードを開発しようとした。しかし、ブレード胴体と刃がいずれもＰＣＤ（Ｐｏｌｙｃｒｙｓｔａｌｌｉｎｅ Ｄｉａｍｏｎｄ）の場合、高精密のブレードを形成させにくく、非常に高価で製造されるという問題点がある。 We are developing blades for cutting advanced MLCCs using PCD (Polycrystalline Diamond) material having a hardness about 10 times that of cemented carbide. As one method, an attempt was made to develop a blade made of a PCD (Polycrystalline Diamond) material. However, in the case where both the blade body and the blade are PCD (Polycrystalline Diamond), it is difficult to form a highly precise blade, and there is a problem that the blade is manufactured at a very high cost.
したがって、本発明の目的は、高度化した部品を不良なしに切断することができるように超高硬度の素材を適用して切断力及び使用時間が改善及び増加した切断用ブレード及びこれを用いた切断装置を提供することである。 Therefore, an object of the present invention is to use a cutting blade having a cutting force and a working time improved and increased by applying a material having an extremely high hardness so that an advanced component can be cut without defects, and the cutting blade. The purpose is to provide a cutting device.
前記本発明の目的を達成するためのＭＬＣＣ（Ｍｕｌｔｉ−Ｌａｙｅｒ Ｃｅｒａｍｉｃ Ｃｏｎｄｅｎｓｅｒ）を含む半導体部品の製造のための切断用ブレードは、所定の温度及び所定の圧力で製造されるＰＣＤ（Ｐｏｌｙｃｒｙｓｔａｌｌｉｎｅ Ｄｉａｍｏｎｄ）素材からなり、互いに対向する刃先傾斜面を有し、一側の長手方向に沿って切断刃先を形成する切断部及び前記切断部の他側から延びて前記切断部を支持する支持延長部を有する刃部と、長手方向に沿って前記支持延長部の少なくとも一部を収容して結合するように陷沒形成された収容結合部を有する刃支持部とを含む。半導体部品を切断する切断部をＰＣＤ（Ｐｏｌｙｃｒｙｓｔａｌｌｉｎｅ Ｄｉａｍｏｎｄ）素材から構成することによって切断力と寿命を向上させることができる。 A cutting blade for manufacturing a semiconductor component including an MLCC (Multi-Layer Ceramic Condenser) for achieving the object of the present invention is made of a PCD (Polycrystalline Diamond) material manufactured at a predetermined temperature and a predetermined pressure. And a blade portion having blade edge inclined surfaces facing each other and having a cutting portion forming a cutting blade edge along the longitudinal direction of one side and a support extension portion extending from the other side of the cutting portion and supporting the cutting portion. And a blade support portion having an accommodating coupling portion that is recessed to accommodate and couple at least a portion of the support extension along the longitudinal direction. By forming the cutting portion for cutting the semiconductor component from a PCD (Polycrystalline Diamond) material, cutting power and life can be improved.
前記支持延長部が前記切断部の刃先角より小さな逃げ角を有し、前記切断部から延設される延長区間を有すれば、ＭＬＣＣの切断過程中にＭＬＣＣの切断面がブレードの側面に接触して切断不良が発生することを防止することができて好ましい。 If the support extension has a clearance angle smaller than the cutting edge angle of the cutting portion and has an extension section extending from the cutting portion, the cutting surface of the MLCC contacts the side surface of the blade during the cutting process of the MLCC. Therefore, it is possible to prevent defective cutting from occurring, which is preferable.
前記刃部の一部と前記刃支持部が互いに同じか異なる属性の超硬合金素材からなり、前記収容結合部で金属接着剤、ブレージング又はソルダリングのいずれか一つによって互いに結合されれば、刃支持部が刃部を支持することができて好ましい。 Part of the blade part and the blade support part are made of cemented carbide material of the same or different attributes, and if they are bonded to each other by any one of the metal bonding agent, brazing or soldering at the accommodation bonding part, The blade support portion is preferable because it can support the blade portion.
前記収容結合部が外向拡開傾斜角を有する一対の陷沒側面を有し、前記支持延長部は前記一対の陷沒側面に接する断面形状を有すれば、ＭＬＣＣを切断する過程で刃部がＭＬＣＣの板面に対して垂直状態を維持することができて好ましい。 If the accommodating coupling part has a pair of recessed side surfaces having an outward diverging inclination angle, and the support extension has a cross-sectional shape in contact with the pair of recessed side surfaces, the blade part is cut in the process of cutting the MLCC. It is preferable because the state perpendicular to the plate surface of the MLCC can be maintained.
また、本発明の目的を達成するための切断装置は、前記ブレードと、ＭＬＣＣ（Ｍｕｌｔｉ−Ｌａｙｅｒ Ｃｅｒａｍｉｃ Ｃｏｎｄｅｎｓｅｒ）を含む半導体部品の製造のために、前記ブレードを前記半導体部品の素材板面に対して垂直に切断するように直線移動させるブレード駆動部とを含む。半導体部品を切断する切断部をＰＣＤ（Ｐｏｌｙｃｒｙｓｔａｌｌｉｎｅ Ｄｉａｍｏｎｄ）素材から構成し、半導体部品の素材板面に対して垂直に切断することができる。 Further, a cutting device for achieving the object of the present invention is, for the manufacture of a semiconductor component including the blade and an MLCC (Multi-Layer Ceramic Condenser), the blade with respect to a material plate surface of the semiconductor component. And a blade driving unit that moves linearly so as to cut vertically. The cutting portion for cutting the semiconductor component can be made of PCD (Polycrystalline Diamond) material, and can be cut perpendicularly to the material plate surface of the semiconductor component.
本発明によれば、半導体部品を切断する切断部をＰＣＤ（Ｐｏｌｙｃｒｙｓｔａｌｌｉｎｅ Ｄｉａｍｏｎｄ）素材から形成することによって切断力を向上させることができる効果がある。 According to the present invention, there is an effect that the cutting force can be improved by forming a cutting portion for cutting a semiconductor component from a PCD (Polycrystalline Diamond) material.
支持延長部は切断部の刃先角より小さな逃げ角を有する区間があるので、ＭＬＣＣの切断過程のうちＭＬＣＣの切断面がブレードの側面に接触して切断不良が発生することを防止することができる効果がある。 Since the support extension has a section having a clearance angle smaller than the cutting edge angle of the cutting portion, it is possible to prevent the cutting surface of the MLCC from coming into contact with the side surface of the blade during the cutting process of the MLCC to cause cutting failure. effective.
収容結合部に金属接着剤、ブレージング又はソルダリングのいずれか一つによって支持延長部が結合されれば、刃支持部が刃部を支持することができる効果がある。 If the support extension is connected to the accommodation connection by any one of metal adhesive, brazing, or soldering, the blade support can support the blade.
収容結合部が外向拡開傾斜角を有する一対の陷沒側面を有し、支持延長部は一対の陷沒側面に接する断面形状を有すれば、ＭＬＣＣを切断する過程で刃部がＭＬＣＣの板面に対して垂直状態を維持することができる効果がある。 If the housing coupling part has a pair of recessed side surfaces having an outward divergence inclination angle, and the support extension has a cross-sectional shape in contact with the pair of recessed side surfaces, the blade part of the MLCC plate in the process of cutting the MLCC. There is an effect that the vertical state can be maintained with respect to the plane.
ブレードを有する切断装置を用いて半導体部品を切断する切断部をＰＣＤ（Ｐｏｌｙｃｒｙｓｔａｌｌｉｎｅ Ｄｉａｍｏｎｄ）素材から構成し、半導体部品の素材板面に対して垂直に切断することができる効果がある。 A cutting unit for cutting a semiconductor component by using a cutting device having a blade is made of a PCD (Polycrystalline Diamond) material, and has an effect of cutting perpendicularly to a material plate surface of the semiconductor component.
以下、添付図面に基づいて本発明の好適な実施例による切断装置１及びブレード１０を詳細に説明する。 Hereinafter, a cutting device 1 and a blade 10 according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.
図１は本発明による切断装置１の概略例示図、図２（ａ）及び図２（ｂ）はブレード１０の詳細図、図３はブレード１０の変形例示図、図４はブレード１０の製造工程図である。 1 is a schematic illustration of a cutting device 1 according to the present invention, FIGS. 2A and 2B are detailed views of a blade 10, FIG. 3 is a modified illustration of the blade 10, and FIG. 4 is a manufacturing process of the blade 10. It is a figure.
切断装置１は、ブレード１０とブレード駆動部２０とを含む。ブレード駆動部２０は、ブレード１０を把持するブレード把持部（図示せず）、ブレード把持部と連結された上下移動軸（図示せず）、及び上下移動軸を回転させ、ブレード把持部を上下に移動させる上下移動モーター（図示せず）を備える。ブレード駆動部２０は、ＭＬＣＣ（Ｍｕｌｔｉ−Ｌａｙｅｒ Ｃｅｒａｍｉｃ Ｃｏｎｄｅｎｓｅｒ）などの半導体部品２の製造のために、ブレード１０を半導体部品２の素材板面に対して垂直に切断するように直線移動させる。切断装置１は制御部（図示せず）をさらに備えてブレード駆動部２０を制御し、切断速度を含む諸般事項を制御することができる。半導体部品２の素材板面の横／縦の大きさはブレード１０の最大切断長さ以内で設定できる。素材板面の横方向切断と縦方向切断のために、ブレード駆動部２０に備えられた上下移動軸が軸心に対して回転動作するか、あるいは素材板面を固定する支持部が軸心に対して回転動作することができる。 The cutting device 1 includes a blade 10 and a blade drive unit 20. The blade drive unit 20 rotates the blade gripping unit (not shown) that grips the blade 10, the vertical movement shaft (not shown) connected to the blade gripping unit, and the vertical movement shaft to move the blade gripping unit up and down. A vertical movement motor (not shown) for moving is provided. The blade driving unit 20 linearly moves the blade 10 so as to cut the blade 10 perpendicularly to the material plate surface of the semiconductor component 2 in order to manufacture the semiconductor component 2 such as an MLCC (Multi-Layer Ceramic Condenser). The cutting device 1 may further include a control unit (not shown) to control the blade driving unit 20 and control various matters including the cutting speed. The horizontal/vertical size of the material plate surface of the semiconductor component 2 can be set within the maximum cutting length of the blade 10. In order to cut the material plate surface in the horizontal direction and the vertical direction, the vertical movement shaft provided in the blade drive unit 20 rotates about the axis, or the support unit that fixes the material plate surface is used as the axis center. In contrast, it can rotate.
ブレード１０は、刃部１００と刃支持部２００とを含む。ブレード１０の形状は広くて平たい形状の一面及び他面を有し、一面と他面は一対の長辺と短辺を有する長方形を共通して有する。一対の長辺の一側には切断のための刃部１００が結合され、他側は刃が形成されず、刃部１００を支持する刃支持部２００が形成されてブレード把持部に結合される。刃部１００は、切断部１１０と支持延長部１２０とを有する。 The blade 10 includes a blade portion 100 and a blade support portion 200. The blade 10 has a wide and flat one surface and another surface, and one surface and the other surface have a common rectangle having a pair of long sides and short sides. A blade portion 100 for cutting is coupled to one side of the pair of long sides, a blade is not formed on the other side, and a blade support portion 200 that supports the blade portion 100 is formed and coupled to a blade gripping portion. .. The blade portion 100 has a cutting portion 110 and a support extension portion 120.
切断部１１０は所定の温度及び所定の圧力で製造されるＰＣＤ（Ｐｏｌｙｃｒｙｓｔａｌｌｉｎｅ Ｄｉａｍｏｎｄ）素材からなり、互いに対向する刃先傾斜面１１１を有し、一側の長手方向に沿って切断刃先１１２をなす。刃先傾斜面１１１は、刃部１００の長手方向に対する切断面のうち断面の中心から所定の刃先角が形成されるように加工される。これにより、刃先傾斜面１１１が形成され、互いに対向する刃先傾斜面１１１によって切断刃先１１２が直線形に形成されてブレード１０の最大切断長が設定される。 The cutting part 110 is made of a PCD (Polycrystalline Diamond) material manufactured at a predetermined temperature and a predetermined pressure, has cutting edge inclined surfaces 111 facing each other, and forms a cutting edge 112 along one longitudinal direction. The cutting edge inclined surface 111 is processed so that a predetermined cutting edge angle is formed from the center of the cross section of the cutting surface in the longitudinal direction of the cutting portion 100. As a result, the cutting edge inclined surface 111 is formed, and the cutting edge 112 is linearly formed by the blade edge inclined surfaces 111 facing each other, and the maximum cutting length of the blade 10 is set.
支持延長部１２０は切断部１１０の他側から延びて切断部１１０を支持する。支持延長部１２０はタングステン（ｗ）を含む超硬合金からなり、切断部１１０とは違う素材であるが、一体に形成されている。支持延長部１２０は、逃げ延長部１２１と支持延長本体部１２２とを有する。逃げ延長部１２１は、切断部１１０の刃先角より小さな逃げ角を持って切断部１１０から延設される延長区間である。当該延長区間は、平面、凹形又は凸形の曲面、又はこれらの複合面に形成されることができる。支持延長本体部１２２は逃げ延長部１２１から延設され、加工が容易であるため、刃先角又は逃げ角を有しないことが好ましい。場合によっては、多くの角度を持って延びることもでき、多様な形状を有することもできる。 The support extension part 120 extends from the other side of the cutting part 110 to support the cutting part 110. The support extension portion 120 is made of a cemented carbide containing tungsten (w), is a material different from that of the cutting portion 110, but is integrally formed. The support extension 120 includes a relief extension 121 and a support extension body 122. The escape extension portion 121 is an extension section extending from the cutting portion 110 with a clearance angle smaller than the cutting edge angle of the cutting portion 110. The extension section may be formed as a flat surface, a concave or convex curved surface, or a composite surface thereof. The support extension main body portion 122 is extended from the clearance extension portion 121 and is easy to process. Therefore, it is preferable that the support extension body portion 122 does not have a cutting edge angle or a clearance angle. In some cases, they can extend at many angles and can have a variety of shapes.
また、刃部１００は、支持延長部１２０に逃げ延長部１２１を形成せずに切断部１１０の刃先傾斜面１１１から支持延長本体部１２２に延びて形成されることもできる。また、切断刃先１１２から始まる刃先傾斜面１１１の端部に近接した切断部１１０から所定の逃げ角の逃げ延長部１２１が延びるか、逃げ延長部１２１のない支持延長本体部１２２が延びることができる。また、刃部１００は、支持延長部１２０に支持延長本体部１２２を形成せず、所定の逃げ角を有する逃げ延長部１２１のみで形成されることができる。また、支持延長部１２０は、逃げ延長部から支持延長本体部領域まで所定の逃げ角で始まって漸進的な曲率を有するように一体化して形成されることができ、凹形又は凸形に形成されることができる。 Alternatively, the blade portion 100 may be formed to extend from the blade tip inclined surface 111 of the cutting portion 110 to the support extension body portion 122 without forming the escape extension portion 121 in the support extension portion 120. Further, a relief extension 121 having a predetermined clearance angle may extend from the cutting portion 110 adjacent to the end of the cutting edge inclined surface 111 starting from the cutting edge 112, or a support extension main body 122 without the relief extension 121 may extend. .. In addition, the blade portion 100 may be formed by only the relief extension portion 121 having a predetermined clearance angle without forming the support extension main body portion 122 in the support extension portion 120. Also, the support extension 120 may be integrally formed to have a gradual curvature starting from a clearance extension to a support extension main body region and having a predetermined clearance angle, and may be concave or convex. Can be done.
切断部１１０はＰＣＤ（Ｐｏｌｙｃｒｙｓｔａｌｌｉｎｅ Ｄｉａｍｏｎｄ）素材からなり、支持延長部１２０は超硬合金からなると言ったが、切断部１１０と支持延長部１２０は相互間に正確な境界を有するものではなく、互いに一体に製造されるので、その境界領域の一部に互いに素材が混じっている部分が存在することがある。また、支持延長部１２０もＰＣＤ素材からなって切断部１１０と一体に形成されることができる。 It is said that the cutting part 110 is made of PCD (Polycrystalline Diamond) material and the support extension part 120 is made of cemented carbide. However, the cutting part 110 and the support extension part 120 do not have an exact boundary between them, and they are integrated with each other. Since it is manufactured in the same manner, there may be a part where the materials are mixed with each other in a part of the boundary area. Also, the support extension part 120 may be formed of PCD material and integrally formed with the cutting part 110.
刃支持部２００は、収容結合部２１０と、支持リブ２２０とを有する。刃支持部２００は板状に形成され、一対の板面と一対の板面を連結するように形成された一対の長面及び短面の側面とを有する。一対の長面の一側には、長手方向に沿って支持延長部１２０の少なくとも一部を収容して結合するように陷沒形成された収容結合部２１０を有する。これにより、収容結合部２１０は収容される刃部１００、すなわち支持延長部１２０を挟んで陷沒左側面２１１及び陷沒右側面２１２を有する。収容結合部２１０はそれに収容される支持延長部１２０、すなわち支持延長本体部１２２の厚さと同一又は類似した大きさに陷沒形成され、好ましくは支持延長本体部１２２の厚さより大きく陷沒形成されることにより、金属接着剤が投入できるようにすることができる。支持リブ２２０は収容結合部２１０が刃支持部２００の長面の一側に陷沒形成されることによって形成される。 The blade support part 200 has a housing coupling part 210 and a support rib 220. The blade support portion 200 is formed in a plate shape and has a pair of plate surfaces and a pair of long and short side surfaces formed so as to connect the pair of plate surfaces. On one side of the pair of long surfaces, there is an accommodating and coupling portion 210 that is recessed so as to accommodate and couple at least a portion of the support extension 120 along the longitudinal direction. As a result, the housing coupling portion 210 has the left side surface 211 and the right side surface 212 of the blade which sandwich the blade portion 100, that is, the support extension 120. The receiving coupling part 210 is formed to have a size equal to or similar to the thickness of the support extension part 120, that is, the support extension body part 122, which is accommodated therein, and is preferably formed to be larger than the thickness of the support extension body part 122. By doing so, the metal adhesive can be added. The support rib 220 is formed by forming the housing coupling part 210 on one side of the long surface of the blade support part 200.
これにより、収容される刃部１００を挟んで左支持リブ２２１と右支持リブ２２２が形成される。各支持リブ２２１、２２２の外側には、各陷沒側面２１１、２１２領域の一部又は全部に対応して所定の傾斜角を有するリブ傾斜面が形成されることができ、あるいはそのリブ傾斜面が省略されることもできる。また、各支持リブ２２１、２２２のリブ傾斜面は逃げ延長部１２１の逃げ角の延長線に沿って同角度に形成されるか湾曲形状に形成されることができる。また、各支持リブ２２１、２２２と該当リブ傾斜面の境界領域、すなわち角領域は所定角度の傾斜部又は所定曲率の湾曲部を含むことができる。 As a result, the left supporting rib 221 and the right supporting rib 222 are formed with the blade portion 100 housed therebetween being sandwiched therebetween. On the outer side of each support rib 221, 222, a rib inclined surface having a predetermined inclination angle may be formed corresponding to a part or the whole of each recessed side surface 211, 212, or the rib inclined surface thereof. Can be omitted. In addition, the rib inclined surfaces of the support ribs 221 and 222 may be formed at the same angle or in a curved shape along the extension line of the clearance angle of the clearance extension portion 121. In addition, the boundary area between each support rib 221, 222 and the corresponding rib inclined surface, that is, the corner area may include an inclined portion having a predetermined angle or a curved portion having a predetermined curvature.
また、収容結合部２１０の深み又はそれに対応して形成される支持リブ２２０の高さは刃部１００に形成される支持延長部１２０の一部、たとえば図示のように支持延長本体部１２２の一部を収容するかあるいは支持延長本体部１２２の全部を収容するように形成されることができる。さらに逃げ延長部１２１の一部又は全部まで収容するように形成されることもできる。 Further, the depth of the housing coupling portion 210 or the height of the support rib 220 formed corresponding to the depth is part of the support extension portion 120 formed on the blade portion 100, for example, one of the support extension body portions 122 as shown in the figure. It may be configured to accommodate a portion or to accommodate the entire support extension body portion 122. Further, it may be formed so as to accommodate part or all of the escape extension 121.
刃部１００の支持延長部１２０、たとえば支持延長本体部１２２は刃支持部２００の収容結合部２１０に収容された状態で互いに結合される。刃部１００の一部、すなわち支持延長部１２０、たとえば逃げ延長部１２１及び／又は支持延長本体部１２２と刃支持部２００は互いに同じか異なる属性の超硬合金素材からなることができる。例えば、各素材の属性は、硬度、成分比、成分の種類、又は粒径などの多様な要素を含み、少なくとも一つ要素が異なるように備えられることができ、いずれか一つの硬度がもっと高いこともできる。好ましくは、類似した金属成分分布を有する超硬合金からなる。支持延長部１２０、たとえば支持延長本体部１２２は収容結合部２１０内で互いに金属接着剤、ブレージング又はソルダリングのいずれか一つによって結合できる。 The support extension 120 of the blade 100, for example, the support extension main body 122 is coupled to each other while being accommodated in the accommodation coupling 210 of the blade support 200. A part of the blade part 100, that is, the support extension part 120, for example, the relief extension part 121 and/or the support extension body part 122, and the blade support part 200 may be made of cemented carbide material having the same or different attributes. For example, the attributes of each material include various factors such as hardness, component ratio, component type, or particle size, and at least one of the factors may be different, and any one of them has higher hardness. You can also Preferably, it is made of cemented carbide having a similar metal component distribution. The support extensions 120, such as the support extension body 122, may be coupled to each other in the receiving joint 210 by any one of metal adhesive, brazing, or soldering.
図３はブレード１０の変形例示図である。 FIG. 3 is a modified example of the blade 10.
図３（ａ）の実施例は、刃部１００の支持延長部１２０が下方に行くほど細くなる形状を有し、支持リブ３２０及び収容結合部３１０も支持延長部１２０の形状に対応するように形成されている。収容結合部３１０は外向拡開傾斜角を有する一対の陷沒側面３１１、３１２を有する。支持延長部１２０は一対の陷沒側面３１１、３１２に接する断面形状を有する。 In the embodiment of FIG. 3A, the support extension 120 of the blade 100 has a shape that becomes thinner as it goes downward, and the support rib 320 and the housing coupling part 310 also correspond to the shape of the support extension 120. Has been formed. The housing coupling part 310 has a pair of concave side surfaces 311 and 312 having an outward diverging inclination angle. The support extension 120 has a cross-sectional shape in contact with the pair of concave side surfaces 311, 312.
図３（ｂ）の実施例は、支持延長部１２０の下端部の角領域が丸い形状を有する。支持リブ４２０は収容結合部４１０の陷沒形成によって形成される。収容結合部４１０の陷沒領域に形成される陷沒側面４１１、４１２は互いに平行に形成されることができるが、下部の陷沒部は支持延長部１２０の下端部の角領域の丸い形状に対応するように丸く形成され、加工の便宜のために、収容結合部４１０の底面も丸く加工される。支持延長部１２０の断面が丸い形状の一対の角領域に形成されて、切断時の力が分散できるので、好ましい断面であり得る。 In the embodiment of FIG. 3B, the corner region at the lower end of the support extension 120 has a round shape. The support ribs 420 are formed by the recessed shape of the housing coupling portion 410. The concavity side surfaces 411 and 412 formed in the concavity area of the housing coupling part 410 may be formed parallel to each other, but the lower concavity part has a rounded shape in the corner area of the lower end of the support extension 120. Correspondingly rounded, the bottom surface of the housing coupling 410 is also rounded for convenience of processing. A cross section of the support extension 120 is formed in a pair of rounded corner regions to disperse the cutting force, which may be a preferable cross section.
図３（ａ）及び図３（ｂ）の各陷沒側面３１１、３１２；４１１、４１２に対応する各支持リブ３２１、３２２；４２１、４２２の外側にリブ傾斜面が備えられることは図２の実施例と同様である。 It is to be noted that the rib inclined surface is provided outside the support ribs 321, 322; 421, 422 corresponding to the respective recessed side surfaces 311, 312; 411, 412 of FIGS. 3A and 3B. It is similar to the embodiment.
図４はブレード１０の製造工程図である。 FIG. 4 is a manufacturing process diagram of the blade 10.
図４（ａ）はＰＣＤ構造物からなる焼結板Ａを、説明の便宜のために、誇張して示す図である。焼結板Ａの製造のために、所定の寸法を有する円形型の底に超硬合金粉末を敷き、その上に黒鉛を積層する。超硬合金粉末と黒鉛を積層した状態で１，４００℃以上、５ＧＰａ以上の超高温及び超高圧の焼結工程を進行する。これにより、黒鉛が多結晶ダイヤモンドに相変化し、超硬合金粉末も高硬度の超硬合金に焼結されて、上側のＰＣＤ層と下部の超硬合金層が形成される。これにより、所定の厚さ及び直径を有する円盤状の多結晶ダイヤモンド（ＰＣＤ）構造物になった焼結板Ａを形成する。このように焼結されて上側領域には多結晶ダイヤモンド層、すなわちＰＣＤ層が形成され、その下部には超硬合金層が形成されてなる円板状の焼結板Ａの板面に対して垂直方向に最も長くカッティング可能な部分を選定し、研磨前の刃部１００として使えるように、ブレード１０の成形時の刃部１００の厚さに対応して所定の厚さを有する薄板材焼結物にカッティングする。すなわち、ブレード１０の最大切断長さは焼結板Ａの直径部分の所定の領域以内で確保することができ、これによって切断すべき半導体部品素材の板面の大きさが設定できる。ここで、最終加工後のブレード１０は１ｍｍ以下の厚さを有する長方形薄板に設定されることができ、刃部１００はブレード１０の厚さ未満に、たとえばブレード厚さの１０％〜５０％に設定されることができる。 FIG. 4A is an exaggerated view of the sintered plate A made of a PCD structure for convenience of explanation. In order to manufacture the sintered plate A, a cemented carbide powder is spread on the bottom of a circular mold having a predetermined size, and graphite is laminated thereon. In a state where the cemented carbide powder and graphite are laminated, a sintering process at 1400° C. or higher and 5 GPa or higher at ultra-high temperature and ultra-high pressure is performed. As a result, the graphite undergoes a phase change into polycrystalline diamond, the cemented carbide powder is also sintered into a high-hardness cemented carbide, and an upper PCD layer and a lower cemented carbide layer are formed. As a result, a sintered plate A having a disk-shaped polycrystalline diamond (PCD) structure having a predetermined thickness and diameter is formed. With respect to the plate surface of the disk-shaped sintered plate A, which is sintered in this way, a polycrystalline diamond layer, that is, a PCD layer is formed in the upper region, and a cemented carbide layer is formed below A thin plate material having a predetermined thickness corresponding to the thickness of the blade portion 100 at the time of forming the blade 10 is selected so that the longest cutting portion in the vertical direction can be used as the blade portion 100 before polishing. Cut into objects. That is, the maximum cutting length of the blade 10 can be ensured within a predetermined region of the diameter portion of the sintered plate A, whereby the size of the plate surface of the semiconductor component material to be cut can be set. Here, the blade 10 after the final processing can be set to a rectangular thin plate having a thickness of 1 mm or less, and the blade portion 100 is less than the thickness of the blade 10, for example, 10% to 50% of the blade thickness. Can be set.
図４（ｂ）は刃部１００として使われるカッティング後の薄板材焼結物と刃支持部２００の形成を示すもので、厚さを誇張して示すものである。研磨前の刃部１００として使われるカッティング後の薄板材焼結物の外側を所定の厚さ及び高さになるように研磨する。刃支持部２００の上面に刃部１００が収容される収容結合部２１０を研磨して、内側に陷沒側面を形成する。陷沒形成された収容結合部２１０に金属接着剤Ｂを塗布する。金属接着剤Ｂは収容結合部２１０と刃部１００の収容領域の一方又は両方に塗布されることができ、両者をブレージング又はソルダリングで接合する場合には金属接着剤の塗布は省略することができる。 FIG. 4B shows the formation of the thin plate material sintered product used as the blade portion 100 after cutting and the blade support portion 200, and the thickness is exaggerated. The outside of the sintered thin plate material that is used as the blade portion 100 before polishing is polished to have a predetermined thickness and height. The accommodating coupling part 210 in which the blade part 100 is accommodated is polished on the upper surface of the blade support part 200 to form a rough side surface inside. The metal adhesive B is applied to the recessed and formed housing coupling portion 210. The metal adhesive B may be applied to one or both of the housing connecting portion 210 and the housing area of the blade 100, and when the both are joined by brazing or soldering, the application of the metal adhesive may be omitted. it can.
図４（ｃ）は刃部１００と刃支持部２００の結合過程を示すものである。研磨前の刃部１００として使われるカッティング後の薄板材焼結物を収容結合部２１０に挿入させた後、互いに結合させる。結合の際、所定の圧力、温度、時間などの条件によって結合力を増大させることができる。 FIG. 4C shows a connecting process of the blade portion 100 and the blade support portion 200. After cutting, the thin plate sintered material used as the blade portion 100 before polishing is inserted into the housing coupling portion 210 and then coupled to each other. At the time of bonding, the bonding force can be increased by the conditions such as predetermined pressure, temperature and time.
図４（ｄ）は刃部１００と刃支持部２００の研磨過程を示すものである。研磨前の刃部１００として使われるカッティング後の薄板材焼結物が収容結合部２１０に結合された後、研磨作業を行って刃先傾斜面１１１、切断刃先１１２、逃げ延長部１２１及び刃支持部２００の上部角部の形状とその外側の各リブ傾斜面を形成する。刃先傾斜面１１１を最終に形成しながら切断刃先１１２のセンタリング位置を確保することができ、切断された両側半導体部品の切断面の均一性が増大する。このように製造されたブレード１０を切断装置１のブレード駆動部２０に装着した後、板状のＭＬＣＣ２を含む半導体部品の素材を切断する。 FIG. 4D shows the polishing process of the blade portion 100 and the blade support portion 200. After the cut thin plate material sintered product used as the blade portion 100 before polishing is coupled to the housing coupling portion 210, a polishing operation is performed to perform the polishing operation of the blade edge inclined surface 111, the cutting edge 112, the escape extension 121 and the blade support. The shape of the upper corner of 200 and the rib inclined surfaces on the outside thereof are formed. It is possible to secure the centering position of the cutting edge 112 while finally forming the inclined edge surface 111, and increase the uniformity of the cut surfaces of the cut semiconductor parts on both sides. After the blade 10 manufactured in this manner is mounted on the blade driving unit 20 of the cutting device 1, the material of the semiconductor component including the plate-shaped MLCC 2 is cut.
前記実施例以外の変形例を説明する。 Modifications other than the above embodiment will be described.
前記の切断装置１はブレード１０の切断刃先１１２を撮像するカメラをさらに含むことができ、切断刃先１１２が正常であるかを判断することができる。これにより、不良が発生する前にブレードを入れ替えることによって不良率を落とし、切断刃先１１２の異常を把握してブレードを入れ替えるので、ブレード入れ替え時間を減らしてＭＬＣＣの生産性を向上させることができる。 The cutting device 1 may further include a camera that captures an image of the cutting edge 112 of the blade 10 to determine whether the cutting edge 112 is normal. As a result, the defective rate is reduced by replacing the blade before a defect occurs, and the blade is replaced after grasping the abnormality of the cutting edge 112, so that the blade replacement time can be reduced and the MLCC productivity can be improved.
切断装置は、切断作業が行われる切断位置に向けてクリーンエアを噴射するクリーンエア噴射部をさらに有することができる。これにより、不良率をもっと落とすことができる。 The cutting device may further include a clean air injecting unit that injects clean air toward a cutting position where a cutting operation is performed. This makes it possible to further reduce the defective rate.
切断装置は、ブレードを把持する複数の把持部を備え、把持部を上下移動軸に対して回転可能に構成し、ブレードを入れ替えなければならない場合、把持部を上下移動軸に対して回転させて正常のブレードに入れ替えることにより、ＭＬＣＣの切断作業が長期間にわたって中断されないようにすることもできる。 The cutting device is provided with a plurality of gripping parts for gripping the blade, and the gripping part is configured to be rotatable with respect to the vertical movement axis.When the blades need to be replaced, the gripping part is rotated with respect to the vertical movement axis. By replacing with a normal blade, the cutting operation of the MLCC can be prevented from being interrupted for a long period of time.
前記の切断装置１及びブレード１０において、半導体部品の素材２を切断する切断部１１０をＰＣＤ（Ｐｏｌｙｃｒｙｓｔａｌｌｉｎｅ Ｄｉａｍｏｎｄ）素材から構成することによって切断力を向上させることができる。支持延長部１２０は切断部１１０の刃先角より小さな逃げ角を有する区間があるので、ＭＬＣＣ２の切断過程中にＭＬＣＣ２の切断面がブレード１０の側面に接触して切断不良が発生することを防止することができる。収容結合部２１０内に金属接着剤、ブレージング又はソルダリングのいずれか一つによって支持延長部１２０が結合されれば、刃支持部２００が刃部１００を堅固に支持することができる。収容結合部２１０が外向拡開傾斜角を有する一対の陷沒側面２１１、２１２を有し、支持延長部１２０が一対の陷沒側面２１１、２１２に接する断面形状を有すれば、ＭＬＣＣ２を切断する過程で刃部１００がＭＬＣＣ２の板面に対して垂直状態を維持することができる。ブレード１０を有する切断装置１を用いて半導体部品２を切断する切断部１１０をＰＣＤ（Ｐｏｌｙｃｒｙｓｔａｌｌｉｎｅ Ｄｉａｍｏｎｄ）素材で構成し、半導体部品２の素材板面に対して垂直に切断することができる。 In the cutting device 1 and the blade 10 described above, the cutting force can be improved by forming the cutting part 110 for cutting the material 2 of the semiconductor component from a PCD (Polycrystalline Diamond) material. Since the support extension 120 has a section having a clearance angle smaller than the cutting edge angle of the cutting part 110, it prevents the cutting surface of the MLCC2 from contacting the side surface of the blade 10 during the cutting process of the MLCC2 to cause cutting failure. be able to. If the support extension 120 is connected to the receiving and connecting part 210 by one of metal adhesive, brazing, and soldering, the blade supporting part 200 can firmly support the blade part 100. The MLCC 2 is cut if the housing coupling part 210 has a pair of concave side surfaces 211, 212 having an outward diverging inclination angle, and the support extension 120 has a cross-sectional shape in contact with the pair of concave side surfaces 211, 212. During the process, the blade portion 100 can maintain the vertical state with respect to the plate surface of the MLCC 2. The cutting unit 110 that cuts the semiconductor component 2 by using the cutting device 1 having the blade 10 is made of PCD (Polycrystalline Diamond) material and can be cut perpendicularly to the material plate surface of the semiconductor component 2.
１ 切断装置
２ ＭＬＣＣ、半導体部品
１０ ブレード
２０ ブレード駆動部
１００ 刃部
１１０ 切断部
１１１ 刃先傾斜面
１１２ 切断刃先
１２０ 支持延長部
１２１ 逃げ延長部
１２２ 支持延長本体部
２００ 刃支持部
２１０ 収容結合部
２１１ 陷沒左側面
２１２ 陷沒右側面
２２０ 支持リブ
２２１ 左支持リブ
２２２ 右支持リブ
DESCRIPTION OF SYMBOLS 1 Cutting device 2 MLCC, semiconductor component 10 Blade 20 Blade drive part 100 Blade part 110 Cutting part 111 Cutting edge inclined surface 112 Cutting cutting edge 120 Support extension 121 Escape extension 122 Support extension main body 200 Blade support 210 Housing connection 211 211 Left side surface 212 right side surface 220 right side support rib 221 left side support rib 222 right side support rib
Claims (5)
所定の温度及び所定の圧力で製造されるＰＣＤ（Ｐｏｌｙｃｒｙｓｔａｌｌｉｎｅ Ｄｉａｍｏｎｄ）素材からなり、互いに対向する刃先傾斜面を有し、一側の長手方向に沿って切断刃先を形成する切断部及び前記切断部の他側から延びて前記切断部を支持する支持延長部を有する刃部と、
長手方向に沿って前記支持延長部の少なくとも一部を収容して結合するように陷沒形成された収容結合部を有する刃支持部とを含み、
前記ブレードは一対の長辺及び短辺を有する長方形の平たい形状を有し、前記刃部は一側長辺に備えられ、前記刃支持部は他側長辺に備えられることを特徴とする、ブレード。 A cutting blade for manufacturing a semiconductor component including an MLCC (Multi-Layer Ceramic Condenser), comprising:
It is made of PCD (Polycrystalline Diamond) material manufactured at a predetermined temperature and a predetermined pressure, has a cutting edge inclined surface facing each other, and has a cutting portion that forms a cutting edge along one longitudinal direction and the cutting portion. A blade portion having a support extension portion extending from the other side to support the cutting portion,
A blade support portion having an accommodating coupling portion that is recessed to accommodate and couple at least a portion of the support extension along the longitudinal direction,
The blade has a rectangular flat shape having a pair of long sides and short sides, the blade portion is provided on one side long side, the blade support portion is provided on the other side long side, blade.
前記支持延長部は前記一対の陷沒側面に接する断面形状を有することを特徴とする、請求項１に記載のブレード。 The accommodating coupling portion has a pair of concave side surfaces having an outward diverging inclination angle,
The blade according to claim 1, wherein the support extension has a cross-sectional shape in contact with the pair of concave side surfaces.
ＭＬＣＣ（Ｍｕｌｔｉ−Ｌａｙｅｒ Ｃｅｒａｍｉｃ Ｃｏｎｄｅｎｓｅｒ）を含む半導体部品の製造のために、前記ブレードを前記半導体部品の素材板面に対して垂直に切断するように直線移動させるブレード駆動部とを含むことを特徴とする、切断装置。 A blade according to any one of claims 1 to 4,
In order to manufacture a semiconductor component including an MLCC (Multi-Layer Ceramic Condenser), a blade driving unit that linearly moves the blade so as to cut the blade perpendicularly to a material plate surface of the semiconductor component. A cutting device.
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