TW202029238A - Cutting blade and cutting device using the same - Google Patents
Cutting blade and cutting device using the same Download PDFInfo
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- TW202029238A TW202029238A TW108133653A TW108133653A TW202029238A TW 202029238 A TW202029238 A TW 202029238A TW 108133653 A TW108133653 A TW 108133653A TW 108133653 A TW108133653 A TW 108133653A TW 202029238 A TW202029238 A TW 202029238A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D1/00—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor
- B26D1/0006—Cutting members therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
- B26D7/26—Means for mounting or adjusting the cutting member; Means for adjusting the stroke of the cutting member
- B26D7/2614—Means for mounting the cutting member
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B26—HAND CUTTING TOOLS; CUTTING; SEVERING
- B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
- B26D1/00—Cutting through work characterised by the nature or movement of the cutting member or particular materials not otherwise provided for; Apparatus or machines therefor; Cutting members therefor
- B26D1/0006—Cutting members therefor
- B26D2001/002—Materials or surface treatments therefor, e.g. composite materials
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- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mining & Mineral Resources (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Dicing (AREA)
- Nonmetal Cutting Devices (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
本發明係關於切割用刀片及利用其之切割裝置,更詳細地,本發明係關於用來製造包含積層陶瓷電容器(Multi Layer Ceramic Condenser)的半導體器件的切割用刀片及利用其之切割裝置。 The present invention relates to a dicing blade and a dicing device using the same. More specifically, the present invention relates to a dicing blade used to manufacture a semiconductor device including a multilayer ceramic capacitor (Multi Layer Ceramic Condenser) and a dicing device using the same.
隨著智慧型手機或電動車的開發使得作為器件使用的積層陶瓷電容器或晶片電感器之類的器件日益高功能化、輕型化及小型化。其中,把電容器積疊成複數個層的積層陶瓷電容器(MLCC,Multi-Layer Ceramic Condenser(或Capacitor))的積層數亦增加並且同時進行小型化。積層陶瓷電容器先經過製作成廣面積疊層的板狀的過程後,利用具備刀片的切割裝置把積層陶瓷電容器材料切割成所需尺寸後製成器件成品。隨著積層數的增加與小型化的進展,用來切割積層陶瓷電容器的刀片材質亦採取提高硬度的超硬合金材質。 With the development of smart phones or electric vehicles, devices such as multilayer ceramic capacitors or chip inductors used as devices have become increasingly more functional, lighter, and smaller. Among them, the number of multilayer ceramic capacitors (MLCC, Multi-Layer Ceramic Condenser (or Capacitor)) in which capacitors are stacked in multiple layers has also increased while miniaturizing. Multilayer ceramic capacitors are first made into a wide-area laminated plate shape, and then a cutting device equipped with a blade is used to cut the material of the multilayer ceramic capacitor into the required size to make a finished device. With the increase in the number of layers and progress in miniaturization, the blade material used to cut the multilayer ceramic capacitor is also made of cemented carbide with increased hardness.
但是,因積層陶瓷電容器的積層數與小型化獲得大幅增強而使用超硬合金質刀片切割積層陶瓷電容器材料,對於提高切割面均勻性或減少層間電通之類不良率的要求亦跟著增加,刀片的使用時間亦成為問 題而需要可長時間使用的刀片。為此,需要開發出改善切割力的超高硬度刀片。 However, because the number of layers and miniaturization of multilayer ceramic capacitors have been greatly enhanced, the use of cemented carbide blades to cut multilayer ceramic capacitor materials has also increased the demand for improving the uniformity of the cutting surface or reducing the defect rate of interlayer electrical communication. Use time has also become a question The problem requires a blade that can be used for a long time. For this reason, it is necessary to develop an ultra-high hardness blade that improves the cutting force.
先前技術利用硬度為超硬合金的10倍左右的多晶鑽石(Polycrystalline Diamond)材質開發用於切割大幅增強後的積層陶瓷電容器的刀刃。作為其中一個方法,相關人員正在開發多晶鑽石材質的刀片。但刀片本體與刀刃全部為多晶鑽石的話較難形成高精度的刀片刀刃,而且其價格亦非常高昂。 The prior art uses Polycrystalline Diamond material, which has a hardness of about 10 times that of cemented carbide, to develop a knife edge for cutting greatly enhanced multilayer ceramic capacitors. As one of the methods, relevant personnel are developing polycrystalline diamond blades. However, if the blade body and blade are all polycrystalline diamonds, it is difficult to form a high-precision blade blade, and the price is very high.
因此,本發明之目的提供一種切割用刀片及利用其之切割裝置,其為了以不發生不良的方式切割大幅增強的器件而適用超高硬度材質,從而改善切割力並且延長使用時間。 Therefore, the object of the present invention is to provide a cutting blade and a cutting device using the same, which apply ultra-high hardness materials in order to cut greatly enhanced devices without causing defects, thereby improving cutting force and prolonging the use time.
可達到前述本發明的目的的用來製造包含積層陶瓷電容器(Multi Layer Ceramic Condenser)的半導體器件的切割用刀片包含:刀刃件,設有切割部與支撐延伸部,該切割部以在預設溫度與預設壓力下製造的多晶鑽石(Polycrystalline Diamond)材質構成,具備互相相對的刃線傾斜面並且沿著一側的長度方向形成切割刃線,該支撐延伸部從前述切割部的另一側延伸並支持前述切割部;及刀刃支撐件,設有收容結合部,該收容結合部凹陷地形成以便收容長度方向的前述支撐延伸部的至少一部分地結 合。以多晶鑽石材質構成切割半導體器件的切割部而能夠提高切割力與壽命。 The dicing blade used to manufacture semiconductor devices containing multilayer ceramic capacitors (Multi Layer Ceramic Condenser) that can achieve the above-mentioned object of the present invention includes: a blade member provided with a cutting portion and a supporting extension portion, and the cutting portion is set at a preset temperature It is made of a polycrystalline diamond material manufactured under a preset pressure. It has mutually opposite blade line inclined surfaces and forms a cutting blade line along the length direction of one side. The support extension is from the other side of the aforementioned cutting part Extending and supporting the aforementioned cutting portion; and the blade support member is provided with a receiving coupling portion, the receiving coupling portion is formed recessed so as to receive at least a portion of the supporting extension portion in the longitudinal direction Together. The cutting part for cutting the semiconductor device is made of polycrystalline diamond material to improve the cutting force and life.
在此,理想為,前述支撐延伸部設有具有小於前述切割部的刃線角度的離隙角並且從前述切割部延伸形成的延伸區段的話,即可在積層陶瓷電容器的切割過程中避免積層陶瓷電容器的切割面接觸刀片的側面而發生的切割不良。 Here, it is desirable that if the support extension portion is provided with an extension section having a relief angle smaller than the blade line angle of the cutting portion and extending from the cutting portion, build-up can be avoided in the cutting process of the multilayer ceramic capacitor The cutting surface of the ceramic capacitor contacts the side surface of the blade and the cutting defect occurs.
理想為,前述刀刃件的一部分與前述刀刃支撐件由屬性相同或相異的超硬合金材質構成,在前述收容結合部相互之間以金屬黏結劑、銅銲或錫銲中的某一個結合的話,刀刃支撐件即可支持刀刃件。 Ideally, a part of the blade member and the blade support member are made of a cemented carbide material with the same or different properties, and if the receiving joint part is joined to each other with one of metal bonding agent, brazing or soldering , The blade support can support the blade.
在此,理想為,前述收容結合部設有具備朝外展開式傾斜角的一對凹陷側面,前述支撐延伸部具有與前述一對凹陷側面接觸的截面形狀的話,即可在切割積層陶瓷電容器的過程中讓刀刃件對於積層陶瓷電容器的盤面保持垂直狀態。 Here, it is desirable that the accommodating and coupling portion is provided with a pair of recessed side surfaces with an outwardly expanding oblique angle, and if the support extension portion has a cross-sectional shape that contacts the pair of recessed side surfaces, it can be used for cutting the multilayer ceramic capacitor. During the process, keep the blade piece perpendicular to the disc surface of the multilayer ceramic capacitor.
另一方面,可達到本發明的目的的切割裝置包含:前述刀片;及刀片驅動單元,為了製造包含積層陶瓷電容器(Multi Layer Ceramic Condenser)的半導體器件而驅使前述刀片直線移動以便對前述半導體器件的材料盤面垂直地切割。以多晶鑽石材質構成切割半導體器件的切割部並且能夠針對半導體器件的材料盤面垂直切割。 On the other hand, a dicing device that can achieve the object of the present invention includes: the aforementioned blade; and a blade drive unit that drives the aforementioned blade to linearly move in order to manufacture a semiconductor device including a multilayer ceramic capacitor (Multi Layer Ceramic Condenser) so as to control the semiconductor device. The material plate is cut vertically. The cutting part for cutting the semiconductor device is made of polycrystalline diamond material and can be cut perpendicular to the material disk surface of the semiconductor device.
根據本發明,以多晶鑽石(Polycrystalline Diamond)材質構成切割半導體器件的切割部而得以提高切割力。 According to the present invention, the cutting portion for cutting the semiconductor device is formed of a polycrystalline diamond material, so that the cutting force can be improved.
支撐延伸部包含著具有比切割部的刃線角度小的離隙角的區段,因此在積層陶瓷電容器的切割過程中能避免積層陶瓷電容器的切割面接觸刀片的側面而發生的切割不良。 The supporting extension includes a section with a smaller relief angle than the cutting edge line angle, so during the cutting of the multilayer ceramic capacitor, the cutting surface of the multilayer ceramic capacitor can be prevented from contacting the side surface of the blade to cause cutting defects.
在收容結合部相互之間以金屬黏結劑、銅銲或錫銲中的某一個與支撐延伸部結合,即可發揮出讓刀刃支撐件支持刀刃件的效果。 Between the receiving joints, one of the metal bonding agent, brazing or soldering is combined with the support extension part, and the effect of allowing the blade support to support the blade can be exerted.
收容結合部設有具備朝外展開式傾斜角的一對凹陷側面,支撐延伸部具有與一對凹陷側面接觸的截面形狀的話,即可發揮出在切割積層陶瓷電容器的過程中讓刀刃件對於積層陶瓷電容器的盤面保持垂直狀態的效果。 The accommodating joint part is provided with a pair of recessed side surfaces with an outwardly expanding inclined angle, and if the supporting extension part has a cross-sectional shape that contacts the pair of recessed side surfaces, it can be used to allow the blade to be used in the process of cutting the multilayer ceramic capacitor. The effect of maintaining the vertical state of the disk surface of the ceramic capacitor.
以多晶鑽石材質製作利用具備刀片的切割裝置切割半導體器件的切割部,能夠對半導體器件的材料盤面垂直地切割。 The cutting part for cutting the semiconductor device with a cutting device equipped with a blade is made of polycrystalline diamond material, and the material disk surface of the semiconductor device can be cut perpendicularly.
1‧‧‧切割裝置 1‧‧‧Cutting device
2‧‧‧積層陶瓷電容器、半導體器件 2‧‧‧Multilayer ceramic capacitors, semiconductor devices
10‧‧‧刀片 10‧‧‧Blade
20‧‧‧刀片驅動單元 20‧‧‧Blade drive unit
100‧‧‧刀刃件 100‧‧‧Blade Parts
110‧‧‧切割部 110‧‧‧Cutting Department
111‧‧‧刃線傾斜面 111‧‧‧Slanted surface of blade line
112‧‧‧切割刃線 112‧‧‧Cutting edge line
120‧‧‧支撐延伸部 120‧‧‧Support extension
121‧‧‧離隙延伸部 121‧‧‧Relief extension
122‧‧‧支撐延伸本體部 122‧‧‧Support extension body
200‧‧‧刀刃支撐件 200‧‧‧Blade support
210‧‧‧收容結合部 210‧‧‧Containment Joint
211‧‧‧凹陷左側面 211‧‧‧The left side of the depression
212‧‧‧凹陷右側面 212‧‧‧The right side of the depression
220‧‧‧支撐肋部 220‧‧‧Support rib
221‧‧‧左支撐肋部 221‧‧‧Left support rib
222‧‧‧右支撐肋部 222‧‧‧Right support rib
【圖1】為本發明的切割裝置之簡略例示圖。 [Figure 1] is a schematic illustration of the cutting device of the present invention.
【圖2】為刀片之詳圖。 [Figure 2] is a detailed drawing of the blade.
【圖3】為刀片之變形例示圖。 [Figure 3] is a diagram showing a modification of the blade.
【圖4】為刀片之製造工藝圖。 [Figure 4] is the manufacturing process diagram of the blade.
下面結合圖式詳細說明本發明的優選實施例的切割裝置1及刀片10。
The cutting device 1 and the
第一圖是本發明的切割裝置1的簡略例示圖,第二圖是刀
片10的詳圖(a)與(b),第三圖是刀片10的變形例示圖,第四圖是刀片10的製造工藝圖。
The first figure is a schematic illustration of the cutting device 1 of the present invention, and the second figure is a knife
The detailed drawings (a) and (b) of the
切割裝置1包含刀片10與刀片驅動單元20。刀片驅動單元20包含把持刀片10的刀片把持部(未圖示)、連接到刀片把持部的上下移動軸(未圖示)、驅使上下移動軸旋轉並且讓刀片把持部上下移動的上下移動馬達(未圖示)。為了製造包含積層陶瓷電容器(Multi Layer Ceramic Condenser)的半導體器件2,刀片驅動單元20讓刀片10沿直線移動以便垂直於半導體器件2的材料盤面地切割。切割裝置1進一步設有控制單元(未圖示)而得以控制刀片驅動單元20並且控制包含切割速度在內的諸多事項。半導體器件2材料盤面的縱/橫尺寸可以設定在刀片10的最大切割長度以內。為了進行材料盤面的橫向切割與縱向切割,可以讓設於刀片驅動單元20的上下移動軸對軸心進行旋轉動作或者讓固定材料盤面的支撐件對軸心進行旋轉動作。
The cutting device 1 includes a
刀片10包含刀刃件100與刀刃支撐件200。刀片10具有寬闊平坦狀的一面與另一面,一面與另一面都呈現出具有一對長邊與短邊的直角四邊形。在一對長邊中的一側結合用於切割的刀刃件100,另一側則沒有形成刀刃而形成支持刀刃件100的刀刃支撐件200並且結合在刀片把持部。刀刃件100包含切割部110與支撐延伸部120。
The
切割部110由在預設溫度與預設壓力下製造的多晶鑽石(Polycrystalline Diamond)材質構成,設有具備互相相對的刃線傾斜面111並且沿著一側的長度方向形成切割刃線112。刃線傾斜面111以下列方式加工形成,即,在相對於刀刃件100長度方向的切割面中從截面中心成為
預設刃線角度地形成。憑此,形成刃線傾斜面111而藉由互相相對的刃線傾斜面111讓切割刃線112以直線形成並且設定刀片10的最大切割長度。
The cutting
支撐延伸部120從切割部110的另一側延伸並且支持切割部110。支撐延伸部120由包含鎢(w)的超硬合金構成,雖然與切割部110的材質不同但一體地構成。支撐延伸部120包含離隙延伸部121與支撐延伸本體部122。離隙延伸部121是具有小於切割部110刃線角度的離隙角並且從切割部110延伸形成的延伸區段。該延伸區段能以平面、凹陷或凸出的曲面或它們的復合面形成。支撐延伸本體部122從離隙延伸部121延伸形成,為了能輕易加工,不具備刃線角度或離隙角較佳。根據情況,亦能以各種角度延伸,亦能具備各種形狀。
The supporting
而且,刀刃件100亦可以不在支撐延伸部120形成離隙延伸部121而在切割部110的刃線傾斜面111延伸到支撐延伸本體部122地形成。而且,可以在從切割刃線112開始的刃線傾斜面111的接近末端部分起從切割部110按照預設離隙角延伸地讓離隙延伸部121開始或者讓沒有離隙延伸部121的支撐延伸本體部122延伸地開始。而且,刀刃件100亦可以在支撐延伸部120不形成支撐延伸本體部122而僅形成具備預設離隙角的離隙延伸部121。而且,支撐延伸部120可以從離隙延伸部開始到支撐延伸本體部區域為止以預設離隙角開始並且具備漸進式曲率地一體化形成,亦能以凹陷形或凸出形形成。
Moreover, the
前面記述切割部110由多晶鑽石材質構成而支撐延伸部120則由超硬合金構成,但切割部110與支撐延伸部120相互之間並不存在著準確的境界而是相互一體地製造,因此其境界區可能會稍微存在著材
質相互混合的部分。而且,支撐延伸部120亦可以由多晶鑽石材質構成而與切割部110一體地形成。
It is stated that the cutting
刀刃支撐件200包含收容結合部210與支撐肋部220。刀刃支撐件200以板狀形成,具有一對板面、連接一對板面地形成的一對長面及短面的側面。一對長面中的一側設有凹陷地形成的收容結合部210以便收容長度方向的支撐延伸部120的至少一部分地結合。憑此,隔著收容於收容結合部210的刀刃件100,即,隔著支撐延伸部120設有凹陷左側面211與凹陷右側面212。與收容於收容結合部210的支撐延伸部120對應地,譬如,與支撐延伸本體部122的厚度對應地,與其相同或相似地凹陷地形成,理想為,以大於支撐延伸本體部122厚度的方式凹陷地形成而得以投入金屬黏結劑。支撐肋部220是收容結合部210在刀刃支撐件200的長面的一側凹陷地形成而形成的。
The
憑此,隔著所收容的刀刃件100形成左支撐肋部221與右支撐肋部222。在各支撐肋部221、222的外側能對應於各凹陷側面211、212區域的一部分或整體地形成具備預設傾斜角的肋部傾斜面,而且,亦可以省略該肋部傾斜面。而且,各支撐肋部221、222的肋部傾斜面可以沿著離隙延伸部121的離隙角的延長線以同一角度形成或者以彎曲形狀形成。而且,各支撐肋部221、222與該肋部傾斜面的境界區,即,邊角區可以包含具備預設角度的傾斜部或具備預設曲率的彎曲部。
With this, the
而且,收容結合部210的深度或與其對應地形成的支撐肋部220的高度可按照下面說明的形成,可收容形成於刀刃件100的支撐延伸部120的一部分,譬如,如圖所示地可收容支撐延伸本體部122的一部
分或者可收容支撐延伸本體部122的全部,除此之外,亦可以收容離隙延伸部121的一部分或全部地形成。
Furthermore, the depth of the accommodating joint 210 or the height of the supporting
刀刃件100的支撐延伸部120,譬如,支撐延伸本體部122在被收容於刀刃支撐件200的收容結合部210的狀態下相互結合。刀刃件100的一部分,即,支撐延伸部120、譬如離隙延伸部121及/或支撐延伸本體部122及刀刃支撐件200能以屬性相同或相異的超硬合金材質構成。譬如,各材質的屬性包含硬度、成分比、成分種類或粒子大小之類的諸多因素,可以讓至少某一個因素相異地設置,可以讓某一個的硬度更高。理想為,由具備相似金屬成分分佈的超硬合金構成。刀刃支撐件120,譬如說,支撐延伸本體部122可以在收容結合部210相互之間以金屬黏結劑、銅銲(brazing)或錫銲(soldering)中的某一個結合。
The
第三圖是刀片10的變形例示圖。
The third figure is a diagram showing a modification of the
在第三圖(a)的實施例中,刀刃件100的支撐延伸部120具有越往下越窄的形狀,支撐肋部320及收容結合部310亦對應於支撐延伸部120的形狀地形成。收容結合部310設有具備朝外展開式傾斜角的一對凹陷側面311、312。支撐延伸部120具有與一對凹陷側面311、312接觸的截面形狀。
In the embodiment of the third figure (a), the supporting
在第三圖(b)的實施例中,支撐延伸部120的下部端面邊角區呈圓形。透過形成收容結合部410的凹陷形狀而形成支撐肋部420。形成於收容結合部410的凹陷區的凹陷側面411、412互相平行地形成,但下部的凹陷側面則按照支撐延伸部120的下部端面邊角區的圓形以圓形形成,為了加工便利而把收容結合部410的底面亦以圓形形成地加工。支撐
延伸部120的端面以圓形的一對邊角區形成而得以把切割時的力量予以分散,因此該為較為妥當的端面。
In the embodiment of the third figure (b), the corner area of the lower end surface of the supporting
與第二圖的實施例一樣,第三圖(a)、第三圖(b)中各凹陷側面311、312、411、412的對應區在各支撐肋部321、322、421、422的外側設有肋部傾斜面。
Like the embodiment in the second figure, the corresponding areas of the
第四圖是刀片10的製造工藝圖。
The fourth figure is a manufacturing process diagram of the
為了說明方便起見,第四圖(a)誇大示出由多晶鑽石結構物構成的燒結盤A。為了製造燒結盤A,在具備預設尺寸的圓模具把超硬合金粉末鋪在底部並且在其上積疊石墨。在積疊超硬合金粉末與石墨的狀態下進行1,400℃以上、5GPa以上的超高溫、超高壓燒結製程。憑此,石墨發生相變化形成多晶鑽石並且超硬合金粉末亦燒結成高硬度的超硬合金而形成上側的多晶鑽石層與下部的超硬合金層。從而形成了由具備預設厚度與直徑的圓盤狀多晶鑽石(PCD)結構物構成的燒結盤A。對於以如此燒結的方式在上側區域由多晶鑽石層(即PCD層)構成而在其下部則由硬合金層構成的圓盤狀燒結盤A,沿著垂直於其盤面的方向選出能最長地切割的部分並且為了將其作為研磨前的刀刃件100使用,與刀片10成型時的刀刃件100厚度對應地切成具備預設厚度的薄盤燒結體。即,可以在燒結盤A的直徑部分的預設區以內確保刀片10的最大切割長度,可憑此決定需要切割的半導體器件材料的盤面尺寸。在此,最終加工後的刀片10可以設置為長方形並具備1mm以下厚度的薄盤,刀刃件100則可以設置為小於刀片10厚度,例如,可以設置為刀片厚度的10%至50%之間。
For the convenience of description, the fourth figure (a) exaggerates the sintered disc A made of polycrystalline diamond structure. In order to manufacture the sintered disc A, the cemented carbide powder is laid on the bottom in a round mold with preset dimensions and graphite is stacked on it. The ultra-high temperature and ultra-high pressure sintering process at a temperature above 1,400℃ and above 5 GPa is carried out in the state of stacking cemented carbide powder and graphite. Accordingly, the graphite undergoes a phase change to form polycrystalline diamond, and the cemented carbide powder is also sintered into a high-hardness cemented carbide to form the upper polycrystalline diamond layer and the lower cemented carbide layer. Thus, a sintered disc A composed of a disc-shaped polycrystalline diamond (PCD) structure with a predetermined thickness and diameter is formed. For the disc-shaped sintered disc A composed of a polycrystalline diamond layer (that is, a PCD layer) in the upper region and a cemented carbide layer at the lower part in such a sintered manner, the longest one is selected along the direction perpendicular to the disc surface In order to use the cut portion as the
第四圖(b)示出形成作為刀刃件100使用的切割後的薄盤燒
結體與刀刃支撐件200,該圖誇大地示出厚度。把研磨前的作為刀刃件100使用的切割後的薄盤燒結體外側研磨成預設厚度與高度。在刀刃支撐件200的上表面研磨出刀刃件100的收容結合部210並且讓內側設有凹陷側面地形成。在凹陷地形成的收容結合部210塗抹金屬黏結劑B。金屬黏結劑B可以塗布在收容結合部210或刀刃件100的收容區中的一個或兩側,如果由銅銲或錫銲結合兩者,即可省略金屬黏結劑的塗布。
The fourth figure (b) shows the thin disk after cutting used as the
第四圖(c)示出刀刃件100與刀刃支撐件200的結合過程。把研磨前的作為刀刃件100使用的切割後的薄盤燒結體插入收容結合部210後使其互相結合。結合時可以根據預設壓力、溫度、時間之類的條件增強結合力。
The fourth figure (c) shows the process of combining the
第四圖(d)示出刀刃件100與刀刃支撐件200的研磨過程。把研磨前的作為刀刃件100使用的切割後的薄盤燒結體結合到收容結合部210後,進行研磨作業形成刃線傾斜面111、切割刃線112、離隙延伸部121及刀刃支撐件200的上部邊角部分的形狀並且在其外側形成各肋部傾斜面。最後形成刃線傾斜面111而得以確保切割刃線112的對中(centering)位置,提高切割後的兩側半導體器件的切割面的均勻性。把如此製造的刀片10安裝到切割裝置1的刀片驅動單元20後,把包含盤狀積層陶瓷電容器2的半導體器件的材料予以切割。
The fourth figure (d) shows the grinding process of the
下面說明前述實施例以外的變形例。 Hereinafter, modifications other than the foregoing embodiment will be described.
前述切割裝置進一步可以設有拍攝刀片10的切割刃線112的相機,因此能夠判定切割刃線112正常與否。憑此,能夠在不良發生之前更換刀片減少不良率,掌握切割刃線112的異常並更換刀片而縮短刀片
更換時間,從而得以提高積層陶瓷電容器的生產效率。
The aforementioned cutting device may further be provided with a camera for photographing the
切割裝置進一步可以設有向進行切割作業的切割位置噴射潔淨空氣的潔淨空氣噴射單元。可憑此進一步降低不良率。 The cutting device may be further provided with a clean air spray unit that sprays clean air to the cutting position where the cutting operation is performed. This can further reduce the defect rate.
切割裝置設有複數個把持刀片的把持部,讓把持部可相對於上下移動軸進行旋轉地設置而在需要更換刀片時讓把持部相對於上下移動軸進行旋轉,從而能夠以正常刀片長時間不中斷地進行積層陶瓷電容器的切割作業。 The cutting device is provided with a plurality of gripping parts for holding the blades, so that the gripping parts can be rotated relative to the vertical movement axis. When the blade needs to be replaced, the gripping parts can be rotated relative to the vertical movement axis, so that the normal blade can be used for a long time. The cutting operation of the multilayer ceramic capacitor is interrupted.
憑藉著前述切割裝置1及刀片10,以多晶鑽石材質製作切割半導體器件2材料的切割部110而得以增強切割力。支撐延伸部120設有具備離隙角的區段,該離隙角則小於切割部110的刃線角度,因此在積層陶瓷電容器2的切割過程中能防止積層陶瓷電容器2的切割面接觸刀片10的側面而發生的切割不良。在收容結合部210相互之間以金屬黏結劑、銅銲或錫銲中的某一個及支撐延伸部120結合,即可讓刀刃支撐件200堅固地支持刀刃件100。收容結合部210具有具備朝外展開式傾斜角的一對凹陷側面211、212而且支撐延伸部120具有與一對凹陷側面211、212接觸的截面形狀,即可在切割積層陶瓷電容器2的過程中讓刀刃件100對積層陶瓷電容器2的盤面保持垂直狀態。以多晶鑽石材質製作利用具備刀片10的切割裝置1切割半導體器件2的切割部110,能夠對半導體器件2的材料盤面垂直地切割。
With the aforementioned cutting device 1 and
1‧‧‧切割裝置 1‧‧‧Cutting device
2‧‧‧積層陶瓷電容器、半導體器件 2‧‧‧Multilayer ceramic capacitors, semiconductor devices
10‧‧‧刀片 10‧‧‧Blade
20‧‧‧刀片驅動單元 20‧‧‧Blade drive unit
Claims (5)
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