JP2020111503A - 複合多結晶体 - Google Patents
複合多結晶体 Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 91
- 239000010432 diamond Substances 0.000 claims abstract description 127
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 126
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 46
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 16
- 239000001257 hydrogen Substances 0.000 claims abstract description 16
- 239000002245 particle Substances 0.000 claims description 61
- 238000002441 X-ray diffraction Methods 0.000 claims description 23
- 229910002804 graphite Inorganic materials 0.000 claims description 23
- 239000010439 graphite Substances 0.000 claims description 23
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 8
- OKTJSMMVPCPJKN-IGMARMGPSA-N Carbon-12 Chemical compound [12C] OKTJSMMVPCPJKN-IGMARMGPSA-N 0.000 abstract description 14
- 238000005520 cutting process Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 5
- 239000002994 raw material Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005245 sintering Methods 0.000 description 6
- 238000005299 abrasion Methods 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- 238000005491 wire drawing Methods 0.000 description 4
- 239000002775 capsule Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004868 gas analysis Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
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Abstract
Description
特開2003−292397号公報(特許文献1)および国際公開第2009/099130号(特許文献2)に開示されるダイヤモンド多結晶体は、耐摩耗工具である伸線ダイスに適用すると、局所摩耗により伸線時の引抜抵抗が増大し伸後の線径が小さくなり断線が多くなり、切削工具であるスクライブホイールや掘削用ビットに適用すると、局所摩耗、衝撃による欠けなどにより工具寿命が短くなるという問題点があった。
かかる態様によれば、耐摩耗工具、切削工具などの材料として好適に用いられる耐摩耗性の高い、多結晶ダイヤモンドと非ダイヤモンド状炭素とを含む複合多結晶体を提供できる。かかる複合多結晶体は、耐摩耗性が高いことから、摩耗により工具寿命が短くなるのを防ぐため、工具寿命を延ばすことができる。
本発明のある実施形態である複合多結晶体は、ダイヤモンド粒子が互いに直接結合して形成される多結晶ダイヤモンドと、多結晶ダイヤモンド中に分散される非ダイヤモンド状炭素とを含み、含有水素濃度が1000ppm以下である。本実施形態の複合多結晶体は、含有水素濃度が1000ppm以下であるため、耐摩耗性が高い。
(複合多結晶体)
図1を参照して、本実施形態の複合多結晶体10は、ダイヤモンド粒子が互いに直接結合して形成される多結晶ダイヤモンド11と、多結晶ダイヤモンド11中に分散される非ダイヤモンド状炭素12とを含み、含有水素濃度が1000ppm以下である。本実施形態の複合多結晶体は、耐摩耗性が高い観点から、含有水素濃度が1000ppm以下であり、500ppm以下が好ましく、300ppm以下がより好ましい。
本実施形態の複合多結晶体10の製造方法は、特に制限はないが、耐摩耗性の高い複合多結晶体10を効率よくかつ低コストで製造する観点から、原料として非ダイヤモンド状炭素を準備する原料準備工程と、上記原料をダイヤモンド相が形成される温度および圧力の条件で焼結することにより複合多結晶体10を形成する複合多結晶体形成工程と、を含むことが好ましい。
実施例1〜5に関わる複合多結晶体を以下の方法で作製した。まず、出発物質として、平均粒径50〜200nmのグラファイト粒子を型押し成形された、密度1.85g/cm3、純度99.95質量%以上のグラファイト成形体を準備した(原料準備工程)。次いで、上記で準備したグラファイト成形体を高融点金属からなるカプセルに入れ、高圧発生装置を用いて、表1(「合成条件」の欄)に記載した温度および圧力において20分間保持することにより、グラファイト成形体をダイヤモンドに変換させ、かつ焼結させた(複合多結晶体形成工程)。これにより各種の複合多結晶ダイヤモンドを得た。
比較例1に関わる複合多結晶体を以下の方法で作製した。まず、出発物質として、平均粒径200nmのグラファイト粒子を型押し成形された、密度1.85g/cm3、純度99.95質量%のグラファイト成形体を準備した(原料準備工程)。次いで、上記で準備したグラファイト成形体を高融点金属からなるカプセルに入れ、高圧発生装置を用いて、表1(「合成条件」の欄)に記載した温度および圧力において20分間保持することにより、グラファイト成形体をダイヤモンドに変換させ、かつ焼結させた(複合多結晶体形成工程)。
比較例2に関わる複合多結晶体を以下の方法で作製した。まず、出発物質として、グラファイト粉末を、遊星ボールミルで平均粒径10nm未満に微粉砕したものを型押し成形して、密度1.80g/cm3、純度99.5質量%のグラファイト成形体を準備した(原料準備工程)。次いで、上記で準備したグラファイト成形体を高融点金属からなるカプセルに入れ、高圧発生装置を用いて、表1(「合成条件」の欄)に記載した温度および圧力において20分間保持することにより、グラファイト成形体をダイヤモンドに変換させ、かつ焼結させた(複合多結晶体形成工程)。
Claims (9)
- ダイヤモンド粒子が互いに直接結合して形成される多結晶ダイヤモンドと、前記多結晶ダイヤモンド中に分散される非ダイヤモンド状炭素と、を含み、
含有水素濃度が1000ppm以下である複合多結晶体。 - 前記多結晶ダイヤモンドの相が三次元的に連続している請求項1に記載の複合多結晶体。
- 前記多結晶ダイヤモンドを形成する前記ダイヤモンド粒子の平均粒径が10nm以上500nm以下である請求項1または請求項2に記載の複合多結晶体。
- 前記非ダイヤモンド状炭素の平均粒径が10nm以上500nm以下である請求項1から請求項3のいずれか1項に記載の複合多結晶体。
- 前記複合多結晶体の全体に対する前記非ダイヤモンド状炭素の占める割合は、前記複合多結晶体のX線回折プロファイルにおいて前記非ダイヤモンド状炭素の(002)面に由来するX線回折ピークの面積をIg(002)とし前記多結晶ダイヤモンドの(111)面に由来するX線回折ピークの面積をId(111)とするときの100×Ig(002)/{Id(111)+Ig(002)}の値が、0.1%以上30%以下である請求項1から請求項4のいずれか1項に記載の複合多結晶体。
- 前記非ダイヤモンド状炭素がグラファイトである請求項1から請求項5のいずれか1項に記載の複合多結晶体。
- 前記非ダイヤモンド状炭素がアモルファスカーボンである請求項1から請求項5のいずれか1項に記載の複合多結晶体。
- ヌープ硬度が50GPa以上である請求項1から請求項7のいずれか1項に記載の複合多結晶体。
- ダイヤモンド粒子が互いに直接結合して形成される多結晶ダイヤモンドと、前記多結晶ダイヤモンド中に分散される非ダイヤモンド状炭素と、を含み、
含有水素濃度が1000ppm以下であり、
前記多結晶ダイヤモンドの相が三次元的に連続しており、
前記多結晶ダイヤモンドを形成する前記ダイヤモンド粒子の平均粒径が10nm以上500nm以下であり、
前記非ダイヤモンド状炭素の平均粒径が10nm以上500nm以下であり、
前記複合多結晶体の全体に対する前記非ダイヤモンド状炭素の占める割合は、前記複合多結晶体のX線回折プロファイルにおいて前記非ダイヤモンド状炭素の(002)面に由来するX線回折ピークの面積をIg(002)とし前記多結晶ダイヤモンドの(111)面に由来するX線回折ピークの面積をId(111)とするときの100×Ig(002)/{Id(111)+Ig(002)}の値が、0.1%以上30%以下であり、
前記非ダイヤモンド状炭素がグラファイトおよびアモルファスカーボンのいずれかであり、
ヌープ硬度が50GPa以上である複合多結晶体。
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