JP2020111495A5 - - Google Patents

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JP2020111495A5
JP2020111495A5 JP2019005111A JP2019005111A JP2020111495A5 JP 2020111495 A5 JP2020111495 A5 JP 2020111495A5 JP 2019005111 A JP2019005111 A JP 2019005111A JP 2019005111 A JP2019005111 A JP 2019005111A JP 2020111495 A5 JP2020111495 A5 JP 2020111495A5
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Japan
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film forming
layer
silicon carbide
forming step
film
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JP7322408B2 (ja
JP2020111495A (ja
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JP2019005111A 2019-01-16 2019-01-16 炭化珪素多結晶基板、炭化珪素多結晶膜の製造方法および炭化珪素多結晶基板の製造方法 Active JP7322408B2 (ja)

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JP2019005111A JP7322408B2 (ja) 2019-01-16 2019-01-16 炭化珪素多結晶基板、炭化珪素多結晶膜の製造方法および炭化珪素多結晶基板の製造方法

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JP2019005111A JP7322408B2 (ja) 2019-01-16 2019-01-16 炭化珪素多結晶基板、炭化珪素多結晶膜の製造方法および炭化珪素多結晶基板の製造方法

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JP2020111495A JP2020111495A (ja) 2020-07-27
JP2020111495A5 true JP2020111495A5 (https=) 2021-12-16
JP7322408B2 JP7322408B2 (ja) 2023-08-08

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4343021A4 (en) * 2022-07-26 2025-04-09 Tokai Carbon Co., Ltd. POLYCRYSTALLINE SIC MOLDED ARTICLE AND METHOD FOR ITS PRODUCTION
CN119895074A (zh) * 2023-08-25 2025-04-25 东海炭素株式会社 多晶SiC成型体

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08188408A (ja) * 1994-12-29 1996-07-23 Toyo Tanso Kk 化学蒸着法による炭化ケイ素成形体及びその製造方法
JP3648112B2 (ja) 1999-11-26 2005-05-18 東芝セラミックス株式会社 ＣＶＤ−ＳｉＣ自立膜構造体、及びその製造方法
JP5458509B2 (ja) 2008-06-04 2014-04-02 日立金属株式会社 炭化珪素半導体基板

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