JP2020096040A5 - - Google Patents

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Publication number
JP2020096040A5
JP2020096040A5 JP2018231681A JP2018231681A JP2020096040A5 JP 2020096040 A5 JP2020096040 A5 JP 2020096040A5 JP 2018231681 A JP2018231681 A JP 2018231681A JP 2018231681 A JP2018231681 A JP 2018231681A JP 2020096040 A5 JP2020096040 A5 JP 2020096040A5
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JP
Japan
Prior art keywords
nitride
material according
piezoelectric
intermediate layer
piezoelectric body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2018231681A
Other languages
English (en)
Japanese (ja)
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JP7085208B2 (ja
JP2020096040A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2018231681A external-priority patent/JP7085208B2/ja
Priority to JP2018231681A priority Critical patent/JP7085208B2/ja
Priority to EP19897007.1A priority patent/EP3896029B1/en
Priority to KR1020217008026A priority patent/KR102604213B1/ko
Priority to PCT/JP2019/046052 priority patent/WO2020121796A1/ja
Priority to CN201980076704.8A priority patent/CN113165865B/zh
Priority to US17/276,464 priority patent/US11968902B2/en
Publication of JP2020096040A publication Critical patent/JP2020096040A/ja
Publication of JP2020096040A5 publication Critical patent/JP2020096040A5/ja
Publication of JP7085208B2 publication Critical patent/JP7085208B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2018231681A 2018-12-11 2018-12-11 圧電体およびそれを用いたmemsデバイス Active JP7085208B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018231681A JP7085208B2 (ja) 2018-12-11 2018-12-11 圧電体およびそれを用いたmemsデバイス
CN201980076704.8A CN113165865B (zh) 2018-12-11 2019-11-26 压电体以及使用其的mems器件
KR1020217008026A KR102604213B1 (ko) 2018-12-11 2019-11-26 압전체 및 이를 이용한 mems 디바이스
PCT/JP2019/046052 WO2020121796A1 (ja) 2018-12-11 2019-11-26 圧電体およびそれを用いたmemsデバイス
EP19897007.1A EP3896029B1 (en) 2018-12-11 2019-11-26 Piezoelectric body and mems device using same
US17/276,464 US11968902B2 (en) 2018-12-11 2019-11-26 Piezoelectric body and MEMS device using same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018231681A JP7085208B2 (ja) 2018-12-11 2018-12-11 圧電体およびそれを用いたmemsデバイス

Publications (3)

Publication Number Publication Date
JP2020096040A JP2020096040A (ja) 2020-06-18
JP2020096040A5 true JP2020096040A5 (enExample) 2021-03-11
JP7085208B2 JP7085208B2 (ja) 2022-06-16

Family

ID=71075954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018231681A Active JP7085208B2 (ja) 2018-12-11 2018-12-11 圧電体およびそれを用いたmemsデバイス

Country Status (6)

Country Link
US (1) US11968902B2 (enExample)
EP (1) EP3896029B1 (enExample)
JP (1) JP7085208B2 (enExample)
KR (1) KR102604213B1 (enExample)
CN (1) CN113165865B (enExample)
WO (1) WO2020121796A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7406262B2 (ja) * 2019-02-22 2023-12-27 国立研究開発法人産業技術総合研究所 窒化物圧電体およびそれを用いたmemsデバイス

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4478910B2 (ja) * 2001-05-11 2010-06-09 宇部興産株式会社 圧電薄膜共振子
US6936837B2 (en) 2001-05-11 2005-08-30 Ube Industries, Ltd. Film bulk acoustic resonator
CN1983462B (zh) * 2002-10-24 2010-11-03 精工爱普生株式会社 强电介质膜的制造方法、和强电介质电容器的制造方法
JP2005244184A (ja) * 2004-01-28 2005-09-08 Toshiba Corp 薄膜圧電素子及び薄膜圧電素子の製造方法
JP4911907B2 (ja) * 2005-03-25 2012-04-04 京セラ株式会社 圧電アクチュエータ及び液体吐出装置
JP4977380B2 (ja) * 2005-05-31 2012-07-18 京セラ株式会社 圧電アクチュエータおよびその駆動方法、並びに印刷ヘッド
JP5190841B2 (ja) 2007-05-31 2013-04-24 独立行政法人産業技術総合研究所 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー
TWI621183B (zh) * 2011-12-01 2018-04-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US9520855B2 (en) * 2014-02-26 2016-12-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonators having doped piezoelectric material and frame elements
US20170263847A1 (en) * 2016-03-09 2017-09-14 Teledyne Dalsa Semiconductor, Inc. Piezoelectric Alloy Films
JP2017201050A (ja) * 2016-05-06 2017-11-09 学校法人早稲田大学 圧電体薄膜及びそれを用いた圧電素子
JP7345855B2 (ja) * 2020-02-27 2023-09-19 国立研究開発法人産業技術総合研究所 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたmemsデバイス

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