CN110178221A - 一种基于二维材料的晶体管及其制备方法和晶体管阵列器件 - Google Patents
一种基于二维材料的晶体管及其制备方法和晶体管阵列器件 Download PDFInfo
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- CN110178221A CN110178221A CN201780083547.4A CN201780083547A CN110178221A CN 110178221 A CN110178221 A CN 110178221A CN 201780083547 A CN201780083547 A CN 201780083547A CN 110178221 A CN110178221 A CN 110178221A
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- 239000001301 oxygen Substances 0.000 claims description 4
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- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 claims description 4
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
一种基于二维材料的晶体管，包括绝缘衬底(10)，设在衬底(10)两端的源极(11)和漏极(12)，源极(11)和漏极(12)之间为沟道(13),沟道(13)中部设有第一二维材料层(131)；设在第一二维材料层(131)一侧并与源极(11)相连的沟道区域中的第二二维材料层(132)，设在第一二维材料层(131)另一侧并与漏极(12)相连的沟道区域中的第三二维材料层(133)，三层二维材料层为一相同材质的整体膜层；设在第一二维材料层(131)上的栅介质层(14)和栅极(15)；第二二维材料层(132)、第三二维材料层(133)的厚度均大于第一二维材料层(131)的厚度。晶体管结构中，与源漏极接触处的第二、第三二维材料层较厚，可减小接触电阻，而沟道中部的第一二维材料层比接触处的薄，因而同时保证了高的迁移率和栅对沟道的调制。还提供了基于二维材料的晶体管的制备方法和应用。
Description
PCT国内申请，说明书已公开。
Claims (20)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2017/081821 WO2018195761A1 (zh) | 2017-04-25 | 2017-04-25 | 一种基于二维材料的晶体管及其制备方法和晶体管阵列器件 |
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| Publication Number | Publication Date |
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| CN110178221A true CN110178221A (zh) | 2019-08-27 |
| CN110178221B CN110178221B (zh) | 2021-07-09 |
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| Country | Link |
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| CN (1) | CN110178221B (zh) |
| WO (1) | WO2018195761A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111969058A (zh) * | 2020-07-30 | 2020-11-20 | 电子科技大学中山学院 | 一种二硫化钼场效应晶体管及其制备方法和应用 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11636324B2 (en) | 2019-09-11 | 2023-04-25 | The Penn State Research Foundation | Gaussian synapses for probabilistic neural networks |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101710588A (zh) * | 2009-12-08 | 2010-05-19 | 北京大学 | 一种碳基场效应晶体管的顶栅介质及其制备方法 |
| CN103346088A (zh) * | 2013-06-08 | 2013-10-09 | 中国科学院微电子研究所 | 一种减小石墨烯顶栅fet器件寄生电阻的方法 |
| CN203674269U (zh) * | 2014-01-10 | 2014-06-25 | 北京京东方光电科技有限公司 | 薄膜晶体管、阵列基板及有机发光显示面板 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102232755B1 (ko) * | 2015-04-07 | 2021-03-26 | 삼성전자주식회사 | 2차원 물질을 이용한 전자소자 및 그 제조 방법 |
| WO2016200971A1 (en) * | 2015-06-08 | 2016-12-15 | Synopsys, Inc. | Substrates and transistors with 2d material channels on 3d geometries |
| CN106206683A (zh) * | 2016-08-31 | 2016-12-07 | 湖南航天新材料技术研究院有限公司 | 一种石墨烯基场效应晶体管及其制备方法 |
-
2017
- 2017-04-25 CN CN201780083547.4A patent/CN110178221B/zh active Active
- 2017-04-25 WO PCT/CN2017/081821 patent/WO2018195761A1/zh active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101710588A (zh) * | 2009-12-08 | 2010-05-19 | 北京大学 | 一种碳基场效应晶体管的顶栅介质及其制备方法 |
| CN103346088A (zh) * | 2013-06-08 | 2013-10-09 | 中国科学院微电子研究所 | 一种减小石墨烯顶栅fet器件寄生电阻的方法 |
| CN203674269U (zh) * | 2014-01-10 | 2014-06-25 | 北京京东方光电科技有限公司 | 薄膜晶体管、阵列基板及有机发光显示面板 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111969058A (zh) * | 2020-07-30 | 2020-11-20 | 电子科技大学中山学院 | 一种二硫化钼场效应晶体管及其制备方法和应用 |
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| Publication number | Publication date |
|---|---|
| CN110178221B (zh) | 2021-07-09 |
| WO2018195761A1 (zh) | 2018-11-01 |
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