KR102604213B1 - 압전체 및 이를 이용한 mems 디바이스 - Google Patents
압전체 및 이를 이용한 mems 디바이스 Download PDFInfo
- Publication number
- KR102604213B1 KR102604213B1 KR1020217008026A KR20217008026A KR102604213B1 KR 102604213 B1 KR102604213 B1 KR 102604213B1 KR 1020217008026 A KR1020217008026 A KR 1020217008026A KR 20217008026 A KR20217008026 A KR 20217008026A KR 102604213 B1 KR102604213 B1 KR 102604213B1
- Authority
- KR
- South Korea
- Prior art keywords
- piezoelectric
- nitride
- ytterbium
- aluminum nitride
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 title claims abstract description 50
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 51
- 239000000126 substance Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- SJKRCWUQJZIWQB-UHFFFAOYSA-N azane;chromium Chemical compound N.[Cr] SJKRCWUQJZIWQB-UHFFFAOYSA-N 0.000 claims description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 3
- CUOITRGULIVMPC-UHFFFAOYSA-N azanylidynescandium Chemical compound [Sc]#N CUOITRGULIVMPC-UHFFFAOYSA-N 0.000 claims description 3
- XLWMYKCPNRBIDK-UHFFFAOYSA-N azanylidyneytterbium Chemical compound [Yb]#N XLWMYKCPNRBIDK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052741 iridium Inorganic materials 0.000 claims description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims 6
- 229910052769 Ytterbium Inorganic materials 0.000 abstract description 48
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 abstract description 48
- 239000010409 thin film Substances 0.000 description 46
- 239000010408 film Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052706 scandium Inorganic materials 0.000 description 5
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 238000003775 Density Functional Theory Methods 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- JUWSSMXCCAMYGX-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Au] JUWSSMXCCAMYGX-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
- H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
- H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0242—Gyroscopes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Analytical Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Micromachines (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018231681A JP7085208B2 (ja) | 2018-12-11 | 2018-12-11 | 圧電体およびそれを用いたｍｅｍｓデバイス |
| JPJP-P-2018-231681 | 2018-12-11 | ||
| PCT/JP2019/046052 WO2020121796A1 (ja) | 2018-12-11 | 2019-11-26 | 圧電体およびそれを用いたｍｅｍｓデバイス |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20210048513A KR20210048513A (ko) | 2021-05-03 |
| KR102604213B1 true KR102604213B1 (ko) | 2023-11-20 |
Family
ID=71075954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020217008026A Active KR102604213B1 (ko) | 2018-12-11 | 2019-11-26 | 압전체 및 이를 이용한 mems 디바이스 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11968902B2 (enExample) |
| EP (1) | EP3896029B1 (enExample) |
| JP (1) | JP7085208B2 (enExample) |
| KR (1) | KR102604213B1 (enExample) |
| CN (1) | CN113165865B (enExample) |
| WO (1) | WO2020121796A1 (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7406262B2 (ja) * | 2019-02-22 | 2023-12-27 | 国立研究開発法人産業技術総合研究所 | 窒化物圧電体およびそれを用いたｍｅｍｓデバイス |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002344279A (ja) | 2001-05-11 | 2002-11-29 | Ube Electronics Ltd | 圧電薄膜共振子 |
| JP2005244184A (ja) | 2004-01-28 | 2005-09-08 | Toshiba Corp | 薄膜圧電素子及び薄膜圧電素子の製造方法 |
| US20170263847A1 (en) | 2016-03-09 | 2017-09-14 | Teledyne Dalsa Semiconductor, Inc. | Piezoelectric Alloy Films |
| JP2017201050A (ja) | 2016-05-06 | 2017-11-09 | 学校法人早稲田大学 | 圧電体薄膜及びそれを用いた圧電素子 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6936837B2 (en) | 2001-05-11 | 2005-08-30 | Ube Industries, Ltd. | Film bulk acoustic resonator |
| CN1983462B (zh) * | 2002-10-24 | 2010-11-03 | 精工爱普生株式会社 | 强电介质膜的制造方法、和强电介质电容器的制造方法 |
| JP4911907B2 (ja) * | 2005-03-25 | 2012-04-04 | 京セラ株式会社 | 圧電アクチュエータ及び液体吐出装置 |
| JP4977380B2 (ja) * | 2005-05-31 | 2012-07-18 | 京セラ株式会社 | 圧電アクチュエータおよびその駆動方法、並びに印刷ヘッド |
| JP5190841B2 (ja) | 2007-05-31 | 2013-04-24 | 独立行政法人産業技術総合研究所 | 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー |
| TWI621183B (zh) * | 2011-12-01 | 2018-04-11 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
| US9520855B2 (en) * | 2014-02-26 | 2016-12-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonators having doped piezoelectric material and frame elements |
| JP7345855B2 (ja) * | 2020-02-27 | 2023-09-19 | 国立研究開発法人産業技術総合研究所 | 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス |
-
2018
- 2018-12-11 JP JP2018231681A patent/JP7085208B2/ja active Active
-
2019
- 2019-11-26 CN CN201980076704.8A patent/CN113165865B/zh active Active
- 2019-11-26 KR KR1020217008026A patent/KR102604213B1/ko active Active
- 2019-11-26 EP EP19897007.1A patent/EP3896029B1/en active Active
- 2019-11-26 WO PCT/JP2019/046052 patent/WO2020121796A1/ja not_active Ceased
- 2019-11-26 US US17/276,464 patent/US11968902B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002344279A (ja) | 2001-05-11 | 2002-11-29 | Ube Electronics Ltd | 圧電薄膜共振子 |
| JP2005244184A (ja) | 2004-01-28 | 2005-09-08 | Toshiba Corp | 薄膜圧電素子及び薄膜圧電素子の製造方法 |
| US20170263847A1 (en) | 2016-03-09 | 2017-09-14 | Teledyne Dalsa Semiconductor, Inc. | Piezoelectric Alloy Films |
| JP2017201050A (ja) | 2016-05-06 | 2017-11-09 | 学校法人早稲田大学 | 圧電体薄膜及びそれを用いた圧電素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7085208B2 (ja) | 2022-06-16 |
| EP3896029A4 (en) | 2022-11-02 |
| JP2020096040A (ja) | 2020-06-18 |
| US11968902B2 (en) | 2024-04-23 |
| CN113165865B (zh) | 2024-05-14 |
| CN113165865A (zh) | 2021-07-23 |
| WO2020121796A1 (ja) | 2020-06-18 |
| US20220037582A1 (en) | 2022-02-03 |
| EP3896029B1 (en) | 2023-08-23 |
| EP3896029A1 (en) | 2021-10-20 |
| EP3896029C0 (en) | 2023-08-23 |
| KR20210048513A (ko) | 2021-05-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5190841B2 (ja) | 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー | |
| US9972769B2 (en) | Piezoelectric thin film and method for manufacturing the same, and piezoelectric element | |
| US7758979B2 (en) | Piezoelectric thin film, piezoelectric material, and fabrication method of piezoelectric thin film and piezoelectric material, and piezoelectric resonator, actuator element, and physical sensor using piezoelectric thin film | |
| CN107112977B (zh) | 压电膜以及压电振子 | |
| CN105765751B (zh) | 压电薄膜及其制造方法以及压电元件 | |
| Mertin et al. | Enhanced piezoelectric properties of c-axis textured aluminium scandium nitride thin films with high scandium content: Influence of intrinsic stress and sputtering parameters | |
| CN110832654B (zh) | 压电薄膜元件 | |
| CN107689781A (zh) | 体声波谐振器、滤波器和体声波谐振器的制造方法 | |
| KR102616106B1 (ko) | 질화물 압전체 및 이를 이용한 mems 디바이스 | |
| JP7085208B2 (ja) | 圧電体およびそれを用いたｍｅｍｓデバイス | |
| KR102803105B1 (ko) | 질화물 재료 및 그것으로 이루어지는 압전체 및 그 압전체를 이용한 mems 디바이스, 트랜지스터, 인버터, 트랜스듀서, saw 디바이스 및 강유전체 메모리 | |
| JP5024858B2 (ja) | 圧電アクチュエータ | |
| JP7128515B2 (ja) | 圧電体薄膜、その製造方法およびその利用 | |
| JPWO2018008651A1 (ja) | 圧電膜及びその製造方法並びに圧電膜を用いた圧電部品 | |
| TWI904882B (zh) | 氮化物材料及由其所成之壓電體以及使用該壓電體之ｍｅｍｓ裝置、與該氮化物材料及由其所成之強介電質以及使用該強介電質之電子元件 | |
| KR102604212B1 (ko) | 질화물 압전체 및 이를 이용한 mems 디바이스 | |
| WO2016136475A1 (ja) | 窒化インジウム圧電薄膜及びその製造方法、並びに圧電素子 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0105 | International application |
Patent event date: 20210317 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20210317 Comment text: Request for Examination of Application |
|
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20230728 Patent event code: PE09021S01D |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
Patent event code: PE07011S01D Comment text: Decision to Grant Registration Patent event date: 20231027 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
Comment text: Registration of Establishment Patent event date: 20231115 Patent event code: PR07011E01D |
|
| PR1002 | Payment of registration fee |
Payment date: 20231116 End annual number: 3 Start annual number: 1 |
|
| PG1601 | Publication of registration |