JP7085208B2 - 圧電体およびそれを用いたｍｅｍｓデバイス - Google Patents

圧電体およびそれを用いたｍｅｍｓデバイス Download PDF

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JP7085208B2
JP7085208B2 JP2018231681A JP2018231681A JP7085208B2 JP 7085208 B2 JP7085208 B2 JP 7085208B2 JP 2018231681 A JP2018231681 A JP 2018231681A JP 2018231681 A JP2018231681 A JP 2018231681A JP 7085208 B2 JP7085208 B2 JP 7085208B2
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piezoelectric
nitride
ytterbium
aluminum nitride
thin film
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JP2018231681A
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Japanese (ja)
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JP2020096040A5 (enExample
JP2020096040A (ja
Inventor
雅人 上原
浩志 山田
守人 秋山
スリ アユ アンガライニ
研二 平田
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National Institute of Advanced Industrial Science and Technology
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National Institute of Advanced Industrial Science and Technology
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Priority to JP2018231681A priority Critical patent/JP7085208B2/ja
Application filed by National Institute of Advanced Industrial Science and Technology filed Critical National Institute of Advanced Industrial Science and Technology
Priority to EP19897007.1A priority patent/EP3896029B1/en
Priority to CN201980076704.8A priority patent/CN113165865B/zh
Priority to KR1020217008026A priority patent/KR102604213B1/ko
Priority to PCT/JP2019/046052 priority patent/WO2020121796A1/ja
Priority to US17/276,464 priority patent/US11968902B2/en
Publication of JP2020096040A publication Critical patent/JP2020096040A/ja
Publication of JP2020096040A5 publication Critical patent/JP2020096040A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0242—Gyroscopes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Micromachines (AREA)
JP2018231681A 2018-12-11 2018-12-11 圧電体およびそれを用いたｍｅｍｓデバイス Active JP7085208B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2018231681A JP7085208B2 (ja) 2018-12-11 2018-12-11 圧電体およびそれを用いたｍｅｍｓデバイス
CN201980076704.8A CN113165865B (zh) 2018-12-11 2019-11-26 压电体以及使用其的mems器件
KR1020217008026A KR102604213B1 (ko) 2018-12-11 2019-11-26 압전체 및 이를 이용한 mems 디바이스
PCT/JP2019/046052 WO2020121796A1 (ja) 2018-12-11 2019-11-26 圧電体およびそれを用いたｍｅｍｓデバイス
EP19897007.1A EP3896029B1 (en) 2018-12-11 2019-11-26 Piezoelectric body and mems device using same
US17/276,464 US11968902B2 (en) 2018-12-11 2019-11-26 Piezoelectric body and MEMS device using same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018231681A JP7085208B2 (ja) 2018-12-11 2018-12-11 圧電体およびそれを用いたｍｅｍｓデバイス

Publications (3)

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JP2020096040A JP2020096040A (ja) 2020-06-18
JP2020096040A5 JP2020096040A5 (enExample) 2021-03-11
JP7085208B2 true JP7085208B2 (ja) 2022-06-16

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JP2018231681A Active JP7085208B2 (ja) 2018-12-11 2018-12-11 圧電体およびそれを用いたｍｅｍｓデバイス

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US (1) US11968902B2 (enExample)
EP (1) EP3896029B1 (enExample)
JP (1) JP7085208B2 (enExample)
KR (1) KR102604213B1 (enExample)
CN (1) CN113165865B (enExample)
WO (1) WO2020121796A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7406262B2 (ja) * 2019-02-22 2023-12-27 国立研究開発法人産業技術総合研究所 窒化物圧電体およびそれを用いたｍｅｍｓデバイス

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002344279A (ja) 2001-05-11 2002-11-29 Ube Electronics Ltd 圧電薄膜共振子
JP2005244184A (ja) 2004-01-28 2005-09-08 Toshiba Corp 薄膜圧電素子及び薄膜圧電素子の製造方法
US20170263847A1 (en) 2016-03-09 2017-09-14 Teledyne Dalsa Semiconductor, Inc. Piezoelectric Alloy Films
JP2017201050A (ja) 2016-05-06 2017-11-09 学校法人早稲田大学 圧電体薄膜及びそれを用いた圧電素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936837B2 (en) 2001-05-11 2005-08-30 Ube Industries, Ltd. Film bulk acoustic resonator
CN1983462B (zh) * 2002-10-24 2010-11-03 精工爱普生株式会社 强电介质膜的制造方法、和强电介质电容器的制造方法
JP4911907B2 (ja) * 2005-03-25 2012-04-04 京セラ株式会社 圧電アクチュエータ及び液体吐出装置
JP4977380B2 (ja) * 2005-05-31 2012-07-18 京セラ株式会社 圧電アクチュエータおよびその駆動方法、並びに印刷ヘッド
JP5190841B2 (ja) 2007-05-31 2013-04-24 独立行政法人産業技術総合研究所 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー
TWI621183B (zh) * 2011-12-01 2018-04-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US9520855B2 (en) * 2014-02-26 2016-12-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonators having doped piezoelectric material and frame elements
JP7345855B2 (ja) * 2020-02-27 2023-09-19 国立研究開発法人産業技術総合研究所 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002344279A (ja) 2001-05-11 2002-11-29 Ube Electronics Ltd 圧電薄膜共振子
JP2005244184A (ja) 2004-01-28 2005-09-08 Toshiba Corp 薄膜圧電素子及び薄膜圧電素子の製造方法
US20170263847A1 (en) 2016-03-09 2017-09-14 Teledyne Dalsa Semiconductor, Inc. Piezoelectric Alloy Films
JP2017201050A (ja) 2016-05-06 2017-11-09 学校法人早稲田大学 圧電体薄膜及びそれを用いた圧電素子

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Publication number Publication date
EP3896029A4 (en) 2022-11-02
JP2020096040A (ja) 2020-06-18
US11968902B2 (en) 2024-04-23
KR102604213B1 (ko) 2023-11-20
CN113165865B (zh) 2024-05-14
CN113165865A (zh) 2021-07-23
WO2020121796A1 (ja) 2020-06-18
US20220037582A1 (en) 2022-02-03
EP3896029B1 (en) 2023-08-23
EP3896029A1 (en) 2021-10-20
EP3896029C0 (en) 2023-08-23
KR20210048513A (ko) 2021-05-03

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