CN113165865B - 压电体以及使用其的mems器件 - Google Patents

压电体以及使用其的mems器件 Download PDF

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Publication number
CN113165865B
CN113165865B CN201980076704.8A CN201980076704A CN113165865B CN 113165865 B CN113165865 B CN 113165865B CN 201980076704 A CN201980076704 A CN 201980076704A CN 113165865 B CN113165865 B CN 113165865B
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China
Prior art keywords
piezoelectric
thin film
ytterbium
nitride
piezoelectric body
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CN201980076704.8A
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Chinese (zh)
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CN113165865A (zh
Inventor
上原雅人
山田浩志
秋山守人
安格拉尼·斯里·阿育
平田研二
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National Institute of Advanced Industrial Science and Technology
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National Institute of Advanced Industrial Science and Technology
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0242—Gyroscopes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Micromachines (AREA)
CN201980076704.8A 2018-12-11 2019-11-26 压电体以及使用其的mems器件 Active CN113165865B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018231681A JP7085208B2 (ja) 2018-12-11 2018-12-11 圧電体およびそれを用いたｍｅｍｓデバイス
JP2018-231681 2018-12-11
PCT/JP2019/046052 WO2020121796A1 (ja) 2018-12-11 2019-11-26 圧電体およびそれを用いたｍｅｍｓデバイス

Publications (2)

Publication Number Publication Date
CN113165865A CN113165865A (zh) 2021-07-23
CN113165865B true CN113165865B (zh) 2024-05-14

Family

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Family Applications (1)

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CN201980076704.8A Active CN113165865B (zh) 2018-12-11 2019-11-26 压电体以及使用其的mems器件

Country Status (6)

Country Link
US (1) US11968902B2 (enExample)
EP (1) EP3896029B1 (enExample)
JP (1) JP7085208B2 (enExample)
KR (1) KR102604213B1 (enExample)
CN (1) CN113165865B (enExample)
WO (1) WO2020121796A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7406262B2 (ja) * 2019-02-22 2023-12-27 国立研究開発法人産業技術総合研究所 窒化物圧電体およびそれを用いたｍｅｍｓデバイス

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1706007A (zh) * 2002-10-24 2005-12-07 精工爱普生株式会社 强电介质膜、强电介质电容器、强电介质存储器、压电元件、半导体元件、强电介质膜的制造方法、和强电介质电容器的制造方法
CN1838443A (zh) * 2005-03-25 2006-09-27 京瓷株式会社 压电驱动器以及喷吐装置
JP2007013096A (ja) * 2005-05-31 2007-01-18 Kyocera Corp 圧電アクチュエータおよびその駆動方法、並びに印刷ヘッド
CN104868871A (zh) * 2014-02-26 2015-08-26 安华高科技通用Ip(新加坡)公司 具有掺杂压电材料和框架元件的体声波谐振器
CN107403730A (zh) * 2011-12-01 2017-11-28 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4478910B2 (ja) * 2001-05-11 2010-06-09 宇部興産株式会社 圧電薄膜共振子
US6936837B2 (en) 2001-05-11 2005-08-30 Ube Industries, Ltd. Film bulk acoustic resonator
JP2005244184A (ja) * 2004-01-28 2005-09-08 Toshiba Corp 薄膜圧電素子及び薄膜圧電素子の製造方法
JP5190841B2 (ja) 2007-05-31 2013-04-24 独立行政法人産業技術総合研究所 圧電体薄膜、圧電体およびそれらの製造方法、ならびに当該圧電体薄膜を用いた圧電体共振子、アクチュエータ素子および物理センサー
US20170263847A1 (en) * 2016-03-09 2017-09-14 Teledyne Dalsa Semiconductor, Inc. Piezoelectric Alloy Films
JP2017201050A (ja) * 2016-05-06 2017-11-09 学校法人早稲田大学 圧電体薄膜及びそれを用いた圧電素子
JP7345855B2 (ja) * 2020-02-27 2023-09-19 国立研究開発法人産業技術総合研究所 窒化物材料およびそれからなる圧電体並びにその圧電体を用いたｍｅｍｓデバイス

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1706007A (zh) * 2002-10-24 2005-12-07 精工爱普生株式会社 强电介质膜、强电介质电容器、强电介质存储器、压电元件、半导体元件、强电介质膜的制造方法、和强电介质电容器的制造方法
CN1838443A (zh) * 2005-03-25 2006-09-27 京瓷株式会社 压电驱动器以及喷吐装置
JP2007013096A (ja) * 2005-05-31 2007-01-18 Kyocera Corp 圧電アクチュエータおよびその駆動方法、並びに印刷ヘッド
CN107403730A (zh) * 2011-12-01 2017-11-28 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
CN107403731A (zh) * 2011-12-01 2017-11-28 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
CN104868871A (zh) * 2014-02-26 2015-08-26 安华高科技通用Ip(新加坡)公司 具有掺杂压电材料和框架元件的体声波谐振器

Also Published As

Publication number Publication date
JP7085208B2 (ja) 2022-06-16
EP3896029A4 (en) 2022-11-02
JP2020096040A (ja) 2020-06-18
US11968902B2 (en) 2024-04-23
KR102604213B1 (ko) 2023-11-20
CN113165865A (zh) 2021-07-23
WO2020121796A1 (ja) 2020-06-18
US20220037582A1 (en) 2022-02-03
EP3896029B1 (en) 2023-08-23
EP3896029A1 (en) 2021-10-20
EP3896029C0 (en) 2023-08-23
KR20210048513A (ko) 2021-05-03

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