JP2020068373A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP2020068373A JP2020068373A JP2019148135A JP2019148135A JP2020068373A JP 2020068373 A JP2020068373 A JP 2020068373A JP 2019148135 A JP2019148135 A JP 2019148135A JP 2019148135 A JP2019148135 A JP 2019148135A JP 2020068373 A JP2020068373 A JP 2020068373A
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- 238000012545 processing Methods 0.000 title claims abstract description 102
- 239000000758 substrate Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 claims description 23
- 230000001737 promoting effect Effects 0.000 claims description 13
- 238000005192 partition Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000000654 additive Substances 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 5
- 238000010146 3D printing Methods 0.000 claims 1
- 230000004043 responsiveness Effects 0.000 abstract description 5
- 239000003507 refrigerant Substances 0.000 description 65
- 239000000463 material Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 6
- 239000007769 metal material Substances 0.000 description 6
- 239000002826 coolant Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000007493 shaping process Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
最初に、一実施形態に係るプラズマ処理装置(基板処理装置)について、図1を用いて説明する。図1は、一実施形態に係るプラズマ処理装置の一例を示す断面模式図である。
以下、アノードを形成する部品の他の一例であるバッフル板20について、図6及び図7を参照して説明する。図6は、一実施形態に係るプラズマ処理装置のバッフル板20の内部構造の一部を示す横断面図である。図7(a)は図6(b)のH−H断面を示し、図7(b)は図6(b)のI−I断面を示す図である。
2a 開口部(第1開口部)
5 ステージ(載置台)
20 バッフル板(部品)
20a スリット
22 シャッター(部品)
23 デポシールド(部品)
23a 開口部(第2開口部)
71,73 導入管
72,74 排出管
S1 プラズマ処理室
S2 排気空間
201〜203 流路
221,231 流路
221a 流出面
222 側壁部
223 リブ
224 外殻部材
225 仕切り部材
206、226 熱交換促進部材
227 流入路
228,229 流出路
Claims (9)
- 処理容器と、
前記処理容器の内部に配置され、基板が載置される載置台と、
前記処理容器と前記載置台との間に配置され、アノードを形成する部品と、を備え、
前記部品は熱交換媒体が流れる流路を有する、基板処理装置。 - 前記処理容器は第1開口部を有し、
前記部品は、前記第1開口部と対応する位置に第2開口部を有するデポシールドと、
前記第2開口部を開閉するシャッターと、を備え、
前記デポシールド及び前記シャッターのうち少なくとも一方の部品は、熱交換媒体が流れる流路を有する、
請求項1に記載の基板処理装置。 - 前記部品は、排気部に設けられるバッフル板であり、熱交換媒体が流れる流路を有する、
請求項1に記載の基板処理装置。 - 前記流路を有する前記部品は、前記熱交換媒体との接触面積を増加させる熱交換促進部材を有する、請求項1乃至請求項3のいずれか1項に記載の基板処理装置。
- 前記流路を有する前記部品は、内部空間を有する外殻部材と、前記内部空間に前記流路を形成する仕切り部材と、前記流路に設けられた熱交換促進部材と、を有する、請求項1または請求項4に記載の基板処理装置。
- 前記熱交換促進部材は、前記外殻部材を支持する、請求項5に記載の基板処理装置。
- 前記外殻部材、前記仕切り部材、前記熱交換促進部材は、一体に成形される、請求項5または請求項6に記載の基板処理装置。
- 前記流路を有する前記部品は、3Dプリンタ技術またはアディティブマニュファクチャリング技術で成形される、請求項1乃至請求項7のいずれか1項に記載の基板処理装置。
- 処理容器と、
前記処理容器内に配置され、基板が載置される載置台と、
前記処理容器内に配置され、アノードを形成する部品と、を備え、
前記部品は、熱交換媒体が流れる流路を有する、基板処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW108136969A TWI831846B (zh) | 2018-10-23 | 2019-10-15 | 基板處理裝置 |
KR1020190129156A KR20200045964A (ko) | 2018-10-23 | 2019-10-17 | 기판 처리 장치 |
CN201910992484.5A CN111092009A (zh) | 2018-10-23 | 2019-10-18 | 基片处理装置 |
US16/659,744 US11532461B2 (en) | 2018-10-23 | 2019-10-22 | Substrate processing apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018199512 | 2018-10-23 | ||
JP2018199512 | 2018-10-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020068373A true JP2020068373A (ja) | 2020-04-30 |
JP7278172B2 JP7278172B2 (ja) | 2023-05-19 |
Family
ID=70390568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019148135A Active JP7278172B2 (ja) | 2018-10-23 | 2019-08-09 | 基板処理装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7278172B2 (ja) |
KR (1) | KR20200045964A (ja) |
CN (1) | CN111092009A (ja) |
TW (1) | TWI831846B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020124563A (ja) * | 2020-04-27 | 2020-08-20 | 株式会社三洋物産 | 遊技機 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0813169A (ja) * | 1994-04-26 | 1996-01-16 | Tokyo Electron Ltd | プラズマ処理装置 |
JPH1022263A (ja) * | 1996-06-28 | 1998-01-23 | Sony Corp | プラズマエッチング装置 |
JPH11204443A (ja) * | 1998-01-12 | 1999-07-30 | Tokyo Electron Ltd | 枚葉式の熱処理装置 |
JPH11317397A (ja) * | 1998-03-06 | 1999-11-16 | Tokyo Electron Ltd | 処理装置 |
JP2003183860A (ja) * | 2001-12-11 | 2003-07-03 | Tokyo Electron Ltd | エッチング方法 |
JP2005089864A (ja) * | 2004-09-29 | 2005-04-07 | Hitachi Ltd | プラズマ処理装置 |
JP2007227443A (ja) * | 2006-02-21 | 2007-09-06 | Hitachi High-Technologies Corp | プラズマエッチング装置及びプラズマ処理室内壁の形成方法 |
WO2011016223A1 (ja) * | 2009-08-04 | 2011-02-10 | キヤノンアネルバ株式会社 | 加熱処理装置および半導体デバイスの製造方法 |
JP2011124362A (ja) * | 2009-12-10 | 2011-06-23 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2012186298A (ja) * | 2011-03-04 | 2012-09-27 | Hitachi Kokusai Electric Inc | 基板支持台、基板処理装置及び半導体装置の製造方法 |
JP2014195047A (ja) * | 2013-02-28 | 2014-10-09 | Tokyo Electron Ltd | 載置台及びプラズマ処理装置 |
JP2015126197A (ja) * | 2013-12-27 | 2015-07-06 | 東京エレクトロン株式会社 | 基板処理装置、シャッタ機構およびプラズマ処理装置 |
JP2015144242A (ja) * | 2013-12-24 | 2015-08-06 | 東京エレクトロン株式会社 | ステージ、ステージの製造方法、熱交換器 |
Family Cites Families (7)
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US5571010A (en) * | 1993-06-18 | 1996-11-05 | Tokyo Electron Kabushiki Kaisha | Heat treatment method and apparatus |
JP3921234B2 (ja) * | 2002-02-28 | 2007-05-30 | キヤノンアネルバ株式会社 | 表面処理装置及びその製造方法 |
JP4593381B2 (ja) * | 2005-06-20 | 2010-12-08 | 東京エレクトロン株式会社 | 上部電極、プラズマ処理装置およびプラズマ処理方法 |
JP4533926B2 (ja) * | 2007-12-26 | 2010-09-01 | 財団法人高知県産業振興センター | 成膜装置及び成膜方法 |
JP5822578B2 (ja) * | 2011-07-20 | 2015-11-24 | 東京エレクトロン株式会社 | 載置台温度制御装置及び基板処理装置 |
US9308490B2 (en) * | 2012-06-11 | 2016-04-12 | 7Ac Technologies, Inc. | Methods and systems for turbulent, corrosion resistant heat exchangers |
KR102587615B1 (ko) * | 2016-12-21 | 2023-10-11 | 삼성전자주식회사 | 플라즈마 처리 장치의 온도 조절기 및 이를 포함하는 플라즈마 처리 장치 |
-
2019
- 2019-08-09 JP JP2019148135A patent/JP7278172B2/ja active Active
- 2019-10-15 TW TW108136969A patent/TWI831846B/zh active
- 2019-10-17 KR KR1020190129156A patent/KR20200045964A/ko not_active Application Discontinuation
- 2019-10-18 CN CN201910992484.5A patent/CN111092009A/zh active Pending
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0813169A (ja) * | 1994-04-26 | 1996-01-16 | Tokyo Electron Ltd | プラズマ処理装置 |
JPH1022263A (ja) * | 1996-06-28 | 1998-01-23 | Sony Corp | プラズマエッチング装置 |
JPH11204443A (ja) * | 1998-01-12 | 1999-07-30 | Tokyo Electron Ltd | 枚葉式の熱処理装置 |
JPH11317397A (ja) * | 1998-03-06 | 1999-11-16 | Tokyo Electron Ltd | 処理装置 |
JP2003183860A (ja) * | 2001-12-11 | 2003-07-03 | Tokyo Electron Ltd | エッチング方法 |
JP2005089864A (ja) * | 2004-09-29 | 2005-04-07 | Hitachi Ltd | プラズマ処理装置 |
JP2007227443A (ja) * | 2006-02-21 | 2007-09-06 | Hitachi High-Technologies Corp | プラズマエッチング装置及びプラズマ処理室内壁の形成方法 |
WO2011016223A1 (ja) * | 2009-08-04 | 2011-02-10 | キヤノンアネルバ株式会社 | 加熱処理装置および半導体デバイスの製造方法 |
JP2011124362A (ja) * | 2009-12-10 | 2011-06-23 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2012186298A (ja) * | 2011-03-04 | 2012-09-27 | Hitachi Kokusai Electric Inc | 基板支持台、基板処理装置及び半導体装置の製造方法 |
JP2014195047A (ja) * | 2013-02-28 | 2014-10-09 | Tokyo Electron Ltd | 載置台及びプラズマ処理装置 |
JP2015144242A (ja) * | 2013-12-24 | 2015-08-06 | 東京エレクトロン株式会社 | ステージ、ステージの製造方法、熱交換器 |
JP2015126197A (ja) * | 2013-12-27 | 2015-07-06 | 東京エレクトロン株式会社 | 基板処理装置、シャッタ機構およびプラズマ処理装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020124563A (ja) * | 2020-04-27 | 2020-08-20 | 株式会社三洋物産 | 遊技機 |
Also Published As
Publication number | Publication date |
---|---|
TWI831846B (zh) | 2024-02-11 |
CN111092009A (zh) | 2020-05-01 |
KR20200045964A (ko) | 2020-05-06 |
TW202030769A (zh) | 2020-08-16 |
JP7278172B2 (ja) | 2023-05-19 |
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