JP2020064860A - 基板処理システム、イオン注入システム、およびビームラインイオン注入システム - Google Patents
基板処理システム、イオン注入システム、およびビームラインイオン注入システム Download PDFInfo
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- JP2020064860A JP2020064860A JP2019210197A JP2019210197A JP2020064860A JP 2020064860 A JP2020064860 A JP 2020064860A JP 2019210197 A JP2019210197 A JP 2019210197A JP 2019210197 A JP2019210197 A JP 2019210197A JP 2020064860 A JP2020064860 A JP 2020064860A
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- 239000000758 substrate Substances 0.000 title claims abstract description 41
- 238000012545 processing Methods 0.000 title claims abstract description 37
- 238000005468 ion implantation Methods 0.000 title claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 61
- 239000010703 silicon Substances 0.000 claims abstract description 61
- 239000000126 substance Substances 0.000 claims abstract description 11
- 150000002500 ions Chemical class 0.000 claims description 36
- 238000010884 ion-beam technique Methods 0.000 claims description 19
- 230000001133 acceleration Effects 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 abstract description 11
- 238000000926 separation method Methods 0.000 abstract description 2
- 239000010419 fine particle Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 23
- 239000000463 material Substances 0.000 description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 18
- 238000000576 coating method Methods 0.000 description 15
- 229910002804 graphite Inorganic materials 0.000 description 15
- 239000010439 graphite Substances 0.000 description 15
- 239000011248 coating agent Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000004891 communication Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005422 blasting Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 1
- 229910001863 barium hydroxide Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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Abstract
Description
Claims (17)
- イオン注入システムであって
イオン源と、
基板が配置される処理チャンバと、
前記イオン注入システム内に配置されたシリコンライナとを備え、
前記シリコンライナの表面は、テクスチャ化され、
前記シリコンライナのテクスチャ化された前記表面は、20マイクロメートル未満の高さを有する複数のマイクロピラミッドを含み、
テクスチャ化された前記表面は、前記シリコンライナの(100)結晶表面の化学的処理により形成されたものである
イオン注入システム。 - 前記シリコンライナは、重イオンビーム衝突に曝露される前記システムの領域に配置される、請求項1に記載のイオン注入システム。
- 質量分析器内に位置する案内管を更に備え、
前記シリコンライナは、前記質量分析器の前記案内管内に配置される、請求項1または2に記載のイオン注入システム。 - 集束素子を更に備え、
前記シリコンライナは、前記集束素子上に配置される、請求項1〜3のいずれか1項に記載のイオン注入システム。 - 前記処理チャンバに近接して配置された加速または減速電極アセンブリを更に備え、
前記シリコンライナは、前記加速または減速電極アセンブリ上に配置される、請求項1〜4のいずれか1項に記載のイオン注入システム。 - 質量分析器の出力部に近接して配置された分析スリットを更に備え、
前記シリコンライナは、前記分析スリット上に配置される、請求項1に記載のイオン注入システム。 - 前記化学的処理は、水酸化物で前記表面を処理することを含む、請求項1に記載のイオン注入システム。
- 前記複数のマイクロピラミッドの高さは、変化する、請求項1に記載のイオン注入システム。
- 前記複数のマイクロピラミッド間の間隔は、変化する、請求項1に記載のイオン注入システム。
- イオン源と、
前記イオン源の外側に配置され、前記イオン源内で生成される複数のイオンを引き付けてイオンビームを形成する電極と、
前記イオンビームが通過する質量分析器と、
所望の電荷/質量比の複数のイオンが通過することを可能にする前記質量分析器の出力部における分析スリットと、
前記イオンビームを集束する前記イオンビームの経路における集束素子と、
基板が配置される処理チャンバと、
前記分析スリットの周囲のシールド上または前記集束素子上に配置されたシリコンライナとを備え、
前記イオンビームの方を向く前記シリコンライナの(100)結晶表面は、テクスチャ化された前記表面が20マイクロメートル未満の高さを有する複数のマイクロピラミッドを含むように、化学的にテクスチャ化される、ビームラインイオン注入システム。 - 前記化学的なテクスチャ化は、水酸化物で前記表面を処理することを含む、請求項10に記載のビームラインイオン注入システム。
- 前記複数のマイクロピラミッドの高さは、変化する、請求項10または11に記載のビームラインイオン注入システム。
- 前記複数のマイクロピラミッド間の間隔は、変化する、請求項10〜12のいずれか1項に記載のビームラインイオン注入システム。
- 基板が配置される複数のチャンバ壁部を有する処理チャンバと、
前記処理チャンバと連通して前記処理チャンバに供給ガスを供給するガス供給源と、
前記供給ガスからプラズマを生成するプラズマ生成器と、
前記処理チャンバの前記複数のチャンバ壁部のうちの少なくとも1つの表面に配置されたシリコンライナとを備え、
前記処理チャンバの内部に面する前記シリコンライナの(100)結晶表面は、テクスチャ化された前記表面が20マイクロメートル未満の高さを有する複数のマイクロピラミッドを含むように、化学的にテクスチャ化される、基板処理システム。 - 前記複数のマイクロピラミッドの高さは、変化する、請求項14に記載の基板処理システム。
- 前記複数のマイクロピラミッド間の間隔は、変化する、請求項14または15に記載の基板処理システム。
- 前記化学的なテクスチャ化は、水酸化物で前記表面を処理することを含む、請求項14〜16のいずれか1項に記載の基板処理システム。
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