JP2020046549A - マスクの形成方法 - Google Patents
マスクの形成方法 Download PDFInfo
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- JP2020046549A JP2020046549A JP2018175200A JP2018175200A JP2020046549A JP 2020046549 A JP2020046549 A JP 2020046549A JP 2018175200 A JP2018175200 A JP 2018175200A JP 2018175200 A JP2018175200 A JP 2018175200A JP 2020046549 A JP2020046549 A JP 2020046549A
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- exposure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/06—Silver salts
- G03F7/063—Additives or means to improve the lithographic properties; Processing solutions characterised by such additives; Treatment after development or transfer, e.g. finishing, washing; Correction or deletion fluids
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
まず、参考例について説明する。図1は、マスクの形成方法の参考例を示すフローチャートである。
次に、第1の実施形態について説明する。図8は、第1の実施形態に係るマスクの形成方法を示すフローチャートである。
次に、第2の実施形態について説明する。図16は、第2の実施形態に係るマスクの形成方法を示すフローチャートである。
次に、第3の実施形態について説明する。図17は、第3の実施形態に係るマスクの形成方法を示すフローチャートである。
次に、第4の実施形態について説明する。図18は、第4の実施形態に係るマスクの形成方法を示すフローチャートである。
101 被加工物
102、102A フォトレジスト膜
104 露光領域
104A 水溶性領域
105 未露光領域
111 露光光
112 熱
141 膜
Claims (7)
- 被加工物上に感光性有機膜を形成する工程と、
前記感光性有機膜の選択的な露光及び露光後ベークを行うことにより、前記感光性有機膜に酸性の官能基を有する第1の領域及び前記酸性の官能基が保護された保護基を有する第2の領域を生成する工程と、
気相又は固相の物質を用いて、前記第1の領域に塩基性物質を浸透させて前記第1の領域に塩を生成する工程と、
前記塩を現像液に溶解させて前記第1の領域を除去する工程と、
を有する、マスクの形成方法。 - 前記第1の領域に前記塩基性物質を浸透させる際に、前記感光性有機膜を塩基性ガスに暴露する、請求項1に記載のマスクの形成方法。
- 前記第1の領域及び前記第2の領域を生成する工程と前記第1の領域を除去する工程との間に、前記感光性有機膜を水蒸気雰囲気に暴露する工程を有する、請求項2に記載のマスクの形成方法。
- 前記第1の領域に前記塩基性物質を浸透させる際に、前記感光性有機膜上に前記塩基性物質を含有する膜を形成し、加熱により前記塩基性物質を前記膜から前記第1の領域に浸透させる、請求項1に記載のマスクの形成方法。
- 前記感光性有機膜を選択的に露光する際に、前記感光性有機膜に極端紫外光を照射する、請求項1乃至4のいずれか1項に記載のマスクの形成方法。
- 前記塩基性物質は、アンモニア、メチルアミン、エチルアミン、モルホリン若しくはピリジン又はこれらの任意の組み合わせである、請求項1乃至5のいずれか1項に記載のマスクの形成方法。
- 前記現像液として水又はアルカリ水溶液を用いる、請求項1乃至6のいずれか1項に記載のマスクの形成方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018175200A JP7154081B2 (ja) | 2018-09-19 | 2018-09-19 | マスクの形成方法 |
TW108132702A TWI811448B (zh) | 2018-09-19 | 2019-09-11 | 遮罩之形成方法 |
KR1020190113915A KR20200033187A (ko) | 2018-09-19 | 2019-09-17 | 마스크의 형성 방법 |
US16/575,674 US11205571B2 (en) | 2018-09-19 | 2019-09-19 | Mask forming method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018175200A JP7154081B2 (ja) | 2018-09-19 | 2018-09-19 | マスクの形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020046549A true JP2020046549A (ja) | 2020-03-26 |
JP7154081B2 JP7154081B2 (ja) | 2022-10-17 |
Family
ID=69772240
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018175200A Active JP7154081B2 (ja) | 2018-09-19 | 2018-09-19 | マスクの形成方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11205571B2 (ja) |
JP (1) | JP7154081B2 (ja) |
KR (1) | KR20200033187A (ja) |
TW (1) | TWI811448B (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11231553A (ja) * | 1998-01-14 | 1999-08-27 | Lg Semicon Co Ltd | 基板の製造方法 |
JP2003273059A (ja) * | 2002-03-19 | 2003-09-26 | Mitsubishi Electric Corp | 基板処理方法およびその装置 |
JP2016035956A (ja) * | 2014-08-01 | 2016-03-17 | 東京エレクトロン株式会社 | 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム |
JP2016161928A (ja) * | 2015-03-05 | 2016-09-05 | 東京エレクトロン株式会社 | 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000131854A (ja) | 1998-10-23 | 2000-05-12 | Nippon Telegr & Teleph Corp <Ntt> | 化学増幅レジストのパタン形成方法 |
JP2001266654A (ja) * | 2000-01-11 | 2001-09-28 | Sanyo Electric Co Ltd | 透明電極及び透明電極のパターニング方法及びそれを用いた半導体素子の製造方法 |
KR100569542B1 (ko) * | 2000-06-13 | 2006-04-10 | 주식회사 하이닉스반도체 | 기체 상태의 아민 처리공정을 이용한 포토레지스트 패턴형성방법 |
US20060003271A1 (en) * | 2004-06-30 | 2006-01-05 | Clark Shan C | Basic supercritical solutions for quenching and developing photoresists |
US20070258712A1 (en) * | 2006-05-03 | 2007-11-08 | Moffat William A | Method and apparatus for the vaporous development of photoresist |
JP2009194207A (ja) * | 2008-02-15 | 2009-08-27 | Tokyo Electron Ltd | パターン形成方法、半導体装置の製造方法及び半導体装置の製造装置 |
US8012675B2 (en) * | 2008-09-18 | 2011-09-06 | Macronix International Co., Ltd. | Method of patterning target layer on substrate |
JP6159746B2 (ja) * | 2014-02-28 | 2017-07-05 | 富士フイルム株式会社 | パターン形成方法、処理剤、電子デバイス及びその製造方法 |
-
2018
- 2018-09-19 JP JP2018175200A patent/JP7154081B2/ja active Active
-
2019
- 2019-09-11 TW TW108132702A patent/TWI811448B/zh active
- 2019-09-17 KR KR1020190113915A patent/KR20200033187A/ko not_active Application Discontinuation
- 2019-09-19 US US16/575,674 patent/US11205571B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11231553A (ja) * | 1998-01-14 | 1999-08-27 | Lg Semicon Co Ltd | 基板の製造方法 |
JP2003273059A (ja) * | 2002-03-19 | 2003-09-26 | Mitsubishi Electric Corp | 基板処理方法およびその装置 |
JP2016035956A (ja) * | 2014-08-01 | 2016-03-17 | 東京エレクトロン株式会社 | 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム |
JP2016161928A (ja) * | 2015-03-05 | 2016-09-05 | 東京エレクトロン株式会社 | 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム |
Also Published As
Publication number | Publication date |
---|---|
KR20200033187A (ko) | 2020-03-27 |
TW202024803A (zh) | 2020-07-01 |
JP7154081B2 (ja) | 2022-10-17 |
US11205571B2 (en) | 2021-12-21 |
US20200090927A1 (en) | 2020-03-19 |
TWI811448B (zh) | 2023-08-11 |
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