JP2020031088A5 - - Google Patents

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Publication number
JP2020031088A5
JP2020031088A5 JP2018154251A JP2018154251A JP2020031088A5 JP 2020031088 A5 JP2020031088 A5 JP 2020031088A5 JP 2018154251 A JP2018154251 A JP 2018154251A JP 2018154251 A JP2018154251 A JP 2018154251A JP 2020031088 A5 JP2020031088 A5 JP 2020031088A5
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JP
Japan
Prior art keywords
semiconductor layer
semiconductor
electrode
layer
conductive type
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Application number
JP2018154251A
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English (en)
Japanese (ja)
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JP2020031088A (ja
JP7029364B2 (ja
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Priority to JP2018154251A priority Critical patent/JP7029364B2/ja
Priority claimed from JP2018154251A external-priority patent/JP7029364B2/ja
Priority to CN201811621023.9A priority patent/CN110854197B/zh
Priority to US16/241,057 priority patent/US10720523B2/en
Publication of JP2020031088A publication Critical patent/JP2020031088A/ja
Publication of JP2020031088A5 publication Critical patent/JP2020031088A5/ja
Application granted granted Critical
Publication of JP7029364B2 publication Critical patent/JP7029364B2/ja
Active legal-status Critical Current
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JP2018154251A 2018-08-20 2018-08-20 半導体装置 Active JP7029364B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2018154251A JP7029364B2 (ja) 2018-08-20 2018-08-20 半導体装置
CN201811621023.9A CN110854197B (zh) 2018-08-20 2018-12-28 半导体装置
US16/241,057 US10720523B2 (en) 2018-08-20 2019-01-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018154251A JP7029364B2 (ja) 2018-08-20 2018-08-20 半導体装置

Publications (3)

Publication Number Publication Date
JP2020031088A JP2020031088A (ja) 2020-02-27
JP2020031088A5 true JP2020031088A5 (enExample) 2020-11-05
JP7029364B2 JP7029364B2 (ja) 2022-03-03

Family

ID=69523027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018154251A Active JP7029364B2 (ja) 2018-08-20 2018-08-20 半導体装置

Country Status (3)

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US (1) US10720523B2 (enExample)
JP (1) JP7029364B2 (enExample)
CN (1) CN110854197B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7337469B1 (ja) * 2022-03-03 2023-09-04 三菱電機株式会社 半導体装置および電力変換装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69631524T2 (de) * 1996-07-05 2004-10-07 St Microelectronics Srl Asymmetrische MOS-Technologie-Leistungsanordnung
US20030209741A1 (en) 2002-04-26 2003-11-13 Wataru Saitoh Insulated gate semiconductor device
US6700156B2 (en) 2002-04-26 2004-03-02 Kabushiki Kaisha Toshiba Insulated gate semiconductor device
JP3935042B2 (ja) 2002-04-26 2007-06-20 株式会社東芝 絶縁ゲート型半導体装置
JP5183857B2 (ja) 2004-03-29 2013-04-17 古河電気工業株式会社 電界効果トランジスタおよび製造方法
JP5002148B2 (ja) * 2005-11-24 2012-08-15 株式会社東芝 半導体装置
JP5407182B2 (ja) * 2008-05-29 2014-02-05 富士電機株式会社 高耐圧縦型ｍｏｓｆｅｔ
JP2010103337A (ja) 2008-10-24 2010-05-06 Toshiba Corp 電力用半導体装置
JP2011003609A (ja) * 2009-06-16 2011-01-06 Toshiba Corp 電力用半導体素子
JP5136674B2 (ja) 2010-07-12 2013-02-06 株式会社デンソー 半導体装置およびその製造方法
JP5787853B2 (ja) * 2012-09-12 2015-09-30 株式会社東芝 電力用半導体装置
JP2015162610A (ja) * 2014-02-27 2015-09-07 株式会社東芝 半導体装置
JP7029710B2 (ja) * 2017-06-16 2022-03-04 富士電機株式会社 半導体装置

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