JP2020008405A - 反応処理装置 - Google Patents
反応処理装置 Download PDFInfo
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Abstract
Description
sinθ=n1・sinθ1=n2・sinθ2=n3・sinθ3 ・・・(1)
P=(L・tanθ+t1・tanθ1+2・t2・tanθ2+2・t3・tanθ3)×2
=2・L・tanθ+2・t1・tanθ1+4・t2・tanθ2+4・t3・tanθ3 ・・・(2)
(2)式において、Lは保持部材61の上面61aから流路封止フィルム16までの距離(mm)、t1は流路封止フィルム16の厚さ(mm)、t2は流路12の深さ(mm)、t3は流路12の底部から基板14の第2主面14bまでの厚さ(mm)である。
1/tan2θ+1=1/sin2θ ・・・(3)
(3)式を変形すると、以下の(4)式が得られる。
tanθ=sinθ/√(1−sin2θ) ・・・(4)
P=2・L・sinθ/√(1−sin2θ)+2・t1・sinθ1/√(1−sin2θ1)+4・t2・sinθ2/√(1−sin2θ2)+4・t3・sinθ3/√(1−sin2θ3) ・・・(5)
(5)式に(1)式を代入すると、以下の(6)式が得られる。
P=2・L・sinθ/√(1−sin2θ)+2・t1・sinθ/(√(n1 2−sin2θ))+4・t2・sinθ/√(n2 2−sin2θ)+4・t3・sinθ/√(n3 2−sin2θ) ・・・(6)
Pmax=2・P0+2・P1+4・P2+4・P3 ・・・(7)
ただし、P0=L・NA/√(1−NA2)
P1=t1・NA/√(n1 2−NA2)
P2=t2・NA/√(1−NA2)
P3=t3・NA/√(n3 2−NA2)
Pmax=2・P0+2・P1+4・P2+4・P3<P ・・・(8)
中心間距離Pが(8)式を満たすように光学ヘッドを配置することにより、一方の光学ヘッドから照射された励起光の他方の光学ヘッドへの回り込みを回避できるので、蛍光検出装置間の干渉を抑制できる。その結果、安定した蛍光信号が得られ、良好な測定精度を有する反応処理装置を実現することができる。
(実施例1)
実施例1では、図5に示す構成において、反射光を強調して評価するために2つの対物レンズ間の保持部材61の上面61aを鏡面(上面61aに到達した光がスネルの法則に従って反射する面)とし、第2光学ヘッド55の光ファイバF22の端面の近傍から、φ200μm(マルチモードファイバのコア径に対応)且つランバシャン17.5°(マルチモードファイバのNA(0.3)に対応)の条件で、光ファイバF22に向けて25000本の光線(波長530nm)を出射させ、第1光学ヘッド51の光ファイバF12の端面の近傍に配置した評価面に到達する光線の強度を光学シミュレーションにより求めた。2つの光学ヘッドの中心間距離Pを2.5mm〜8.0mmの範囲で変えたときの光線の相対強度の変化を図7に示す。
実施例2では、第2光学ヘッド55の第2対物レンズOB2の出射端面にφ0.8mmのピンホールを配置した。それ以外の条件は実施例1と同様とし、評価面に到達する光線の強度を光学シミュレーションにより求めた。2つの光学ヘッドの中心間距離Pを2.5mm〜6.0mmの範囲で変えたときの光線の相対強度の変化を図8に示す。
(実施例3)
実施例3は、基板14における流路12の底部と第2主面14bとの間の全体に光吸収層を設けた実施例である。実施例3では、実施例1と同様に、L=1.735mm、NA=0.3、t1=0.1mm、t2=0.7mm、t3=3.3mm、n1=1.53、n3=1.53とした。実施例3では、中心点間距離Pを3.5mmとし、実施例1で求めたPmax=4.65mmよりも小さい値とした。基板14における流路12の底部と第2主面14bとの間に、厚みt3’=3.3mmで吸収係数α=0.58/0.33=1.76cm−1の光吸収層を設け、実施例1と同様に評価面に到達する光線の強度を光学シミュレーションにより求めた。
実施例4は、基板14の第2主面14b上に光吸収層を設けた実施例である。実施例4では、実施例2と同様に、第2光学ヘッド55の第2対物レンズOB2の出射端面にφ0.8mmのピンホールを配置した構成とした。実施例4では、中心点間距離Pを2.75mmとし、実施例2で求めたPmax=3.36mmよりも小さい値とした。また、実施例4では、基板14の第2主面14b上に、屈折率1.53で厚さ0.1mmの実質的に吸収のない樹脂層を介して、屈折率1.53、厚さ1.0mmで吸収係数α=0.58/0.1=5.8cm−1の光吸収層を設け、流路12内に試料が存在する条件で上記実施例と同様に評価面に到達する光線の強度を光学シミュレーションで求めた。
実施例5では、基板14の第2主面14b上に設ける光吸収層の吸収係数のみ実施例4から変更した。実施例5では、光吸収層の吸収係数αを、α=0.75/0.1=7.5cm−1とし、上記実施例と同様に評価面に到達する光線の強度を光学シミュレーションで求めた。
実施例6においても、基板14の第2主面14b上に設ける光吸収層の吸収係数のみ実施例4から変更した。実施例6では、光吸収層の吸収係数αを、α=1.15/0.1=11.5cm−1とし、上記実施例と同様に評価面に到達する光線の強度を光学シミュレーションで求めた。
Claims (10)
- 試料が移動する流路が第1主面に形成された基板と、前記流路を封止するように前記第1主面上に設けられた流路封止フィルムとを備える反応処理容器と、
第1励起光を前記流路中の試料に照射するとともに、前記第1励起光の照射により試料から生じた第1蛍光を集光する第1対物レンズを備える第1光学ヘッドと、
第2励起光を前記流路中の試料に照射するとともに、前記第2励起光の照射により試料から生じた第2蛍光を集光する第2対物レンズを備える第2光学ヘッドと、
前記第1光学ヘッドおよび前記第2光学ヘッドを保持する保持部材と、
を備える反応処理装置であって、
前記第1光学ヘッドおよび前記第2光学ヘッドは、前記流路の長手方向に並んで配置され、
前記第1蛍光の波長範囲と前記第2励起光の波長範囲は、少なくとも一部が重複しており、
前記第1対物レンズの光軸と前記第2対物レンズの光軸との間の距離Pが、以下の式:
2・P0+2・P1+4・P2+4・P3<P
P0=L・NA/√(1−NA2)
P1=t1・NA/√(n1 2−NA2)
P2=t2・NA/√(1−NA2)
P3=t3・NA/√(n3 2−NA2)
を満たす(ただし、Lは前記保持部材から前記流路封止フィルムまでの距離、t1は前記流路封止フィルムの厚さ、t2は前記流路の深さ、t3は前記流路の底部から前記基板の第2主面までの厚さ、NAは前記第1対物レンズおよび前記第2対物レンズの開口数、n1は前記流路封止フィルムの屈折率、n3は前記基板の屈折率)ことを特徴とする反応処理装置。 - 前記距離Pが、さらに1.1×(2・P0+2・P1+4・P2+4・P3)≦Pを満たし、さらに好ましくは1.2×(2・P0+2・P1+4・P2+4・P3)≦Pを満たすことを特徴とする請求項1に記載の反応処理装置。
- 前記距離Pが、P≦S−2×ΔS(ただし、Sは前記第1光学ヘッドおよび前記第2光学ヘッドが配置される流路の直線部分の長さ、ΔSは1mm)を満たすことを特徴とする請求項1または2に記載の反応処理装置。
- 前記基板における前記流路の底部と前記第2主面との間に、励起光を吸収する光吸収層を備えることを特徴とする請求項1から3のいずれかに記載の反応処理装置。
- 試料が移動する流路が第1主面に形成された基板と、前記流路を封止するように前記第1主面上に設けられた流路封止フィルムとを備える反応処理容器と、
第1励起光を前記流路中の試料に照射するとともに、前記第1励起光の照射により試料から生じた第1蛍光を集光する第1対物レンズを備える第1光学ヘッドと、
第2励起光を前記流路中の試料に照射するとともに、前記第2励起光の照射により試料から生じた第2蛍光を集光する第2対物レンズを備える第2光学ヘッドと、
前記第1光学ヘッドおよび前記第2光学ヘッドを保持する保持部材と、
を備える反応処理装置であって、
前記第1光学ヘッドおよび前記第2光学ヘッドは、前記流路の長手方向に並んで配置され、
前記第1蛍光の波長範囲と前記第2励起光の波長範囲は、少なくとも一部が重複しており、
前記基板に励起光を吸収する光吸収層が設けられることを特徴とする反応処理装置。 - 前記光吸収層は、吸収係数αがα≧0.58/t3’(ただしt3’は前記光吸収層の厚さ)を満たすように形成されることを特徴とする請求項5に記載の反応処理装置。
- 前記光吸収層は、吸収係数αがα≧0.75/t3’(ただしt3’は前記光吸収層の厚さ)を満たすように形成されることを特徴とする請求項5に記載の反応処理装置。
- 前記光吸収層は、吸収係数αがα≧1.15/t3’(ただしt3’は前記光吸収層の厚さ)を満たすように形成されることを特徴とする請求項5に記載の反応処理装置。
- 前記光吸収層は、前記流路の底部と前記基板の第2主面との間に設けられることを特徴とする請求項5から8のいずれかに記載の反応処理装置。
- 前記光吸収層は、前記基板の第2主面上に設けられることを特徴とする請求項5から8のいずれかに記載の反応処理装置。
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