JP2020002459A - 複合タングステン酸化物膜及びその製造方法、並びに該膜を有する膜形成基材及び物品 - Google Patents
複合タングステン酸化物膜及びその製造方法、並びに該膜を有する膜形成基材及び物品 Download PDFInfo
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- JP2020002459A JP2020002459A JP2019024926A JP2019024926A JP2020002459A JP 2020002459 A JP2020002459 A JP 2020002459A JP 2019024926 A JP2019024926 A JP 2019024926A JP 2019024926 A JP2019024926 A JP 2019024926A JP 2020002459 A JP2020002459 A JP 2020002459A
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- tungsten oxide
- composite tungsten
- oxide film
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- 239000002131 composite material Substances 0.000 title claims abstract description 136
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 title claims abstract description 130
- 229910001930 tungsten oxide Inorganic materials 0.000 title claims abstract description 130
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 239000000463 material Substances 0.000 title claims abstract description 17
- 239000000203 mixture Substances 0.000 claims abstract description 20
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 20
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000010937 tungsten Substances 0.000 claims abstract description 17
- 229910052716 thallium Inorganic materials 0.000 claims abstract description 13
- 229910052738 indium Inorganic materials 0.000 claims abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 229910052742 iron Inorganic materials 0.000 claims abstract description 9
- 229910052718 tin Inorganic materials 0.000 claims abstract description 9
- 229910052783 alkali metal Inorganic materials 0.000 claims abstract description 7
- 150000001340 alkali metals Chemical class 0.000 claims abstract description 7
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 47
- 238000010438 heat treatment Methods 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 39
- 239000013078 crystal Substances 0.000 claims description 32
- 238000002834 transmittance Methods 0.000 claims description 22
- 238000002441 X-ray diffraction Methods 0.000 claims description 18
- 238000004544 sputter deposition Methods 0.000 claims description 18
- 230000003746 surface roughness Effects 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 16
- 239000011521 glass Substances 0.000 claims description 16
- 239000011261 inert gas Substances 0.000 claims description 10
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 6
- 229910052792 caesium Inorganic materials 0.000 claims description 6
- 229910052700 potassium Inorganic materials 0.000 claims description 6
- 229910052701 rubidium Inorganic materials 0.000 claims description 6
- 229910052788 barium Inorganic materials 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- 239000002585 base Substances 0.000 abstract description 7
- 238000009413 insulation Methods 0.000 abstract description 7
- 238000002310 reflectometry Methods 0.000 abstract description 6
- 230000000903 blocking effect Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 258
- 239000012298 atmosphere Substances 0.000 description 15
- 238000005477 sputtering target Methods 0.000 description 15
- 239000010419 fine particle Substances 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 239000006185 dispersion Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 239000003574 free electron Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- VPXSRGLTQINCRV-UHFFFAOYSA-N dicesium;dioxido(dioxo)tungsten Chemical compound [Cs+].[Cs+].[O-][W]([O-])(=O)=O VPXSRGLTQINCRV-UHFFFAOYSA-N 0.000 description 4
- 239000002270 dispersing agent Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000000053 physical method Methods 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- -1 compound compound Chemical class 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000005816 glass manufacturing process Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 150000003658 tungsten compounds Chemical class 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
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- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G41/00—Compounds of tungsten
- C01G41/006—Compounds containing, besides tungsten, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/34—Sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C03C2217/00—Coatings on glass
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- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
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- C03C2218/00—Methods for coating glass
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- C03C2218/32—After-treatment
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Abstract
Description
1.複合タングステン酸化物膜
2.複合タングステン酸化物膜の製造方法
2−1.成膜工程
2−2.熱処理工程
3.膜形成基材
4.物品
本発明の一実施形態に係る複合タングステン酸化物膜について説明する。本発明の一実施形態に係る複合タングステン酸化物膜は、一般式MxWyOz(ただし、Mは、アルカリ金属、アルカリ土類金属、Fe、In、Tl、Snの内から選択される1種以上の元素、Wはタングステン、Oは酸素)で表される組成を主成分とする膜であり、xとyの比が0.001≦x/y≦1、zとyの比が2.2≦z/y≦3.0の範囲の構成である。
次に、複合タングステン酸化物膜の製造方法について説明する。図3は、本発明の一実施形態に係る複合タングステン酸化物膜の製造方法の概略を示す工程図である。本発明の一実施形態は、元素MとタングステンWと酸素Oを主成分とする複合タングステン酸化物膜の製造方法であって、物理的な成膜法を用いて膜を形成する成膜工程S1と、膜を熱処理する熱処理工程S2とを有する。以下、各工程について詳細に説明する。
成膜工程S1では、物理的な成膜法を用いて膜を形成する。本発明の一実施形態に係る複合タングステン酸化物膜の物理的な成膜方法としては、真空蒸着法、スパッタリング法、イオンプレーティング法、イオンビーム法などがある。この中でも、スパッタリング法は、成膜粒子のエネルギーが大きく付着力が強い、成膜が緻密で膜質が強い、成膜プロセスが安定していて膜質、膜厚の制御が高い精度で可能である。さらに、スパッタリング法は、高融点金属・合金・化合物の成膜が可能、反応性ガスの導入で酸化物や窒化物などの成膜が可能であり、組成の調整が比較的容易などの特長を持ち、液晶表示素子やハードディスク等の電子機器、ウィンドフィルムやミラー等の汎用品など幅広い分野で多く利用され、製造装置も多いことから好ましい。
次に、熱処理工程S2では、成膜工程S1で得られた膜を熱処理する。本発明の一実施形態に係る複合タングステン酸化物膜の膜特性を得るには熱処理工程S2を不活性または還元雰囲気中で行う。
本発明の一実施形態に係る膜形成基材は、上述した複合タングステン酸化物膜が被成膜基材の少なくとも一方の面に形成されたものである。被成膜基材は、本発明の一実施形態に係る複合タングステン酸化物膜の形成が可能であれば特に限定されるものではない。
本発明の一実施形態に係る物品は、上述した複合タングステン酸化物膜及び/又は膜形成基材を1又は複数有する。本発明の一実施形態に係る物品は、複合タングステン酸化物膜が光を反射する機能を有する物品であればどのような物品でも構わない。
実施例1では、Cs/W原子比が0.33のセシウムタングステン酸化物粉末(住友金属鉱山株式会社製YM−01)をホットプレス装置に投入し、真空雰囲気、温度950℃、押し圧250kgf/cm2の条件で焼結し、セシウムタングステン酸化物焼結体を作製した。焼結体組成を化学分析した結果、Cs/Wは0.33であった。この酸化物焼結体を直径153mm、厚み5mmに機械加工で研削し、ステンレス製バッキングプレートに金属インジウム蝋材を用いて接合して、セシウムタングステン酸化物スパッタリングターゲットを作製した。
実施例1と同様に同じ装置を用い、表1及び表2に記載されているように元素M、組成比、膜厚、成膜雰囲気、熱処理雰囲気、温度および時間を変えて複合タングステン酸化物膜の作成を行い、膜の特性を調べた。表1及び表2に実施例の結果を、比較例の結果と併せて示す。
Claims (15)
- 一般式MxWyOz(ただし、Mは、アルカリ金属、アルカリ土類金属、Fe、In、Tl、Snの内から選択される1種以上の元素、Wはタングステン、Oは酸素)で表される組成を主成分とする複合タングステン酸化物膜であって、
0.001≦x/y≦1、2.2≦z/y≦3.0であり、
有機物成分を実質的に含まず、
波長550nmにおける透過率が50%以上、波長1400nmにおける透過率が30%以下、かつ、波長1400nmにおける反射率が35%以上であることを特徴とする複合タングステン酸化物膜。 - 表面粗さSaが20nm以下であることを特徴とする請求項1に記載の複合タングステン酸化物膜。
- シート抵抗が105Ω/□未満であることを特徴とする請求項1又は請求項2に記載の複合タングステン酸化物膜。
- スパッタリング成膜由来であることを特徴とする請求項1乃至請求項3のいずれか1項に記載の複合タングステン酸化物膜。
- 前記Mは、Cs、Rb、K、Tl、In、Ba、Li、Na、Ca、Sr、Fe、およびSnの内から選択される1種以上の元素であることを特徴とする請求項1乃至請求項4のいずれか1項に記載の複合タングステン酸化物膜。
- 六方晶の結晶構造を含む請求項1乃至請求項5のいずれか1項に記載の複合タングステン酸化物膜。
- CuKα線を使用したX線回折による六方晶(002)面の回折強度I(002)と、六方晶(200)面の回折強度I(200)の強度比をI(002)/I(200)としたとき、I(002)/I(200)は0.30以上0.50以下であり、
CuKα線を使用したX線回折による六方晶のa軸とc軸との比c/aが1.018〜1.029である請求項6に記載の複合タングステン酸化物膜。 - 一般式MxWyOz(ただし、Mは、アルカリ金属、アルカリ土類金属、Fe、In、Tl、Snの内から選択される1種以上の元素、Wはタングステン、Oは酸素)で表される組成を主成分とする複合タングステン酸化物膜であって、
0.001≦x/y≦1、2.2≦z/y≦3.0であり、
当該複合タングステン酸化物膜は、六方晶の結晶構造を含み、
CuKα線を使用したX線回折による六方晶(002)面の回折強度I(002)と、六方晶(200)面の回折強度I(200)の強度比をI(002)/I(200)としたとき、I(002)/I(200)は0.30以上0.50以下であり、
CuKα線を使用したX線回折による六方晶のa軸とc軸との比c/aが1.018〜1.029である複合タングステン酸化物膜。 - 前記Mは、Cs、Rb、K、Tl、Baから選択される1種類以上の元素であることを特徴とする請求項8に記載の複合タングステン酸化物膜。
- 20nmより厚い膜厚を有することを特徴とする請求項1乃至請求項9のいずれか1項に記載の複合タングステン酸化物膜。
- 請求項1乃至請求項10のいずれか1項に記載の複合タングステン酸化物膜が被成膜基材の少なくとも一方の面に形成されていることを特徴とする膜形成基材。
- 前記被成膜基材は、400℃以上の軟化点もしくは熱変形温度を有することを特徴とする請求項11に記載の膜形成基材。
- 前記被成膜基材がガラスであることを特徴とする請求項11又は請求項12に記載の膜形成基材。
- 請求項1乃至請求項10のいずれか1項に記載の複合タングステン酸化物膜及び/又は請求項11乃至請求項13のいずれか1項に記載の膜形成基材を1又は複数有することを特徴とする物品。
- 複合タングステン酸化物膜の製造方法であって、
物理的な成膜法により膜を形成する成膜工程と、
前記膜を熱処理する熱処理工程とを有し、
前記成膜工程では不活性ガス中で成膜をし、かつ、前記熱処理工程では不活性ガス又は還元性ガスを含む不活性ガス中で400〜700℃で熱処理することを特徴とする複合タングステン酸化物膜の製造方法。
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