|
US4307179A
(en)
*
|
1980-07-03 |
1981-12-22 |
International Business Machines Corporation |
Planar metal interconnection system and process
|
|
US4484979A
(en)
|
1984-04-16 |
1984-11-27 |
At&T Bell Laboratories |
Two-step anisotropic etching process for patterning a layer without penetrating through an underlying thinner layer
|
|
US4680085A
(en)
|
1986-04-14 |
1987-07-14 |
Ovonic Imaging Systems, Inc. |
Method of forming thin film semiconductor devices
|
|
JPH04124809A
(ja)
*
|
1990-09-14 |
1992-04-24 |
Toppan Printing Co Ltd |
X線露光用マスクの製造方法
|
|
JP2932650B2
(ja)
*
|
1990-09-17 |
1999-08-09 |
松下電器産業株式会社 |
微細構造物の製造方法
|
|
JP2757838B2
(ja)
|
1995-10-25 |
1998-05-25 |
日本電気株式会社 |
半導体装置の製造方法
|
|
JP3053072B2
(ja)
*
|
1996-09-10 |
2000-06-19 |
東京応化工業株式会社 |
レジスト積層体及びそれを用いたパターン形成方法
|
|
US6414366B1
(en)
|
1998-07-29 |
2002-07-02 |
Tdk Corporation |
Thin-film magnetic head wafer and manufacturing method of thin-film magnetic head
|
|
JP2000122267A
(ja)
*
|
1998-10-14 |
2000-04-28 |
Nikon Corp |
ステンシル型レチクルのリペア方法
|
|
US6238582B1
(en)
|
1999-03-30 |
2001-05-29 |
Veeco Instruments, Inc. |
Reactive ion beam etching method and a thin film head fabricated using the method
|
|
US6787052B1
(en)
|
2000-06-19 |
2004-09-07 |
Vladimir Vaganov |
Method for fabricating microstructures with deep anisotropic etching of thick silicon wafers
|
|
US6998219B2
(en)
*
|
2001-06-27 |
2006-02-14 |
University Of South Florida |
Maskless photolithography for etching and deposition
|
|
DE10205077B4
(de)
|
2002-02-07 |
2007-03-08 |
Infineon Technologies Ag |
Halbleiterspeicherzelle mit einem Graben und einem planaren Auswahltransistor und Verfahren zu ihrer Herstellung
|
|
US7041598B2
(en)
*
|
2003-06-25 |
2006-05-09 |
Hewlett-Packard Development Company, L.P. |
Directional ion etching process for patterning self-aligned via contacts
|
|
US6794256B1
(en)
|
2003-08-04 |
2004-09-21 |
Advanced Micro Devices Inc. |
Method for asymmetric spacer formation
|
|
JP4054325B2
(ja)
|
2004-08-11 |
2008-02-27 |
日本電信電話株式会社 |
半導体素子の作製方法及び半導体素子
|
|
WO2006132660A2
(en)
|
2004-09-29 |
2006-12-14 |
California Institute Of Technology |
Material processing method for semiconductor lasers
|
|
KR100708530B1
(ko)
|
2004-12-31 |
2007-04-16 |
동부일렉트로닉스 주식회사 |
얕은 트랜치 소자 분리막 공정 중 디봇 형상 방지방법
|
|
JP4867171B2
(ja)
|
2005-01-21 |
2012-02-01 |
富士電機株式会社 |
半導体装置の製造方法
|
|
US7696102B2
(en)
|
2005-03-31 |
2010-04-13 |
Gang Zhang |
Methods for fabrication of three-dimensional structures
|
|
US20070051622A1
(en)
|
2005-09-02 |
2007-03-08 |
Applied Materials, Inc. |
Simultaneous ion milling and sputter deposition
|
|
US7323374B2
(en)
*
|
2005-09-19 |
2008-01-29 |
International Business Machines Corporation |
Dense chevron finFET and method of manufacturing same
|
|
US7790621B2
(en)
|
2006-02-23 |
2010-09-07 |
Sophia Wen |
Ion implantation for increasing etch rate differential between adjacent materials
|
|
KR20070122050A
(ko)
*
|
2006-06-23 |
2007-12-28 |
주식회사 하이닉스반도체 |
이중 패터닝 공정을 이용한 캐패시터 패턴 형성 방법
|
|
CN101507062B
(zh)
|
2006-07-18 |
2010-12-22 |
宾奥普迪克斯股份有限公司 |
具有燕尾形突脊的AlGaInN基激光器
|
|
US7892928B2
(en)
|
2007-03-23 |
2011-02-22 |
International Business Machines Corporation |
Method of forming asymmetric spacers and methods of fabricating semiconductor device using asymmetric spacers
|
|
US8652763B2
(en)
|
2007-07-16 |
2014-02-18 |
The Board Of Trustees Of The University Of Illinois |
Method for fabricating dual damascene profiles using sub pixel-voting lithography and devices made by same
|
|
US7625790B2
(en)
*
|
2007-07-26 |
2009-12-01 |
International Business Machines Corporation |
FinFET with sublithographic fin width
|
|
US20090084757A1
(en)
|
2007-09-28 |
2009-04-02 |
Yuri Erokhin |
Uniformity control for ion beam assisted etching
|
|
US7994002B2
(en)
|
2008-11-24 |
2011-08-09 |
Applied Materials, Inc. |
Method and apparatus for trench and via profile modification
|
|
US7862962B2
(en)
*
|
2009-01-20 |
2011-01-04 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Integrated circuit layout design
|
|
US8101510B2
(en)
|
2009-04-03 |
2012-01-24 |
Varian Semiconductor Equipment Associates, Inc. |
Plasma processing apparatus
|
|
US7767977B1
(en)
|
2009-04-03 |
2010-08-03 |
Varian Semiconductor Equipment Associates, Inc. |
Ion source
|
|
US8603591B2
(en)
|
2009-04-03 |
2013-12-10 |
Varian Semiconductor Ewuipment Associates, Inc. |
Enhanced etch and deposition profile control using plasma sheath engineering
|
|
US8192641B2
(en)
|
2009-07-23 |
2012-06-05 |
GlobalFoundries, Inc. |
Methods for fabricating non-planar electronic devices having sidewall spacers formed adjacent selected surfaces
|
|
JP5011360B2
(ja)
*
|
2009-09-21 |
2012-08-29 |
株式会社東芝 |
フォトマスクの設計方法
|
|
US8089050B2
(en)
|
2009-11-19 |
2012-01-03 |
Twin Creeks Technologies, Inc. |
Method and apparatus for modifying a ribbon-shaped ion beam
|
|
US8778603B2
(en)
*
|
2010-03-15 |
2014-07-15 |
Varian Semiconductor Equipment Associates, Inc. |
Method and system for modifying substrate relief features using ion implantation
|
|
US8421139B2
(en)
|
2010-04-07 |
2013-04-16 |
International Business Machines Corporation |
Structure and method to integrate embedded DRAM with finfet
|
|
EP2378543B1
(en)
*
|
2010-04-14 |
2015-05-20 |
ASM Genitech Korea Ltd. |
Method of forming semiconductor patterns
|
|
US8288741B1
(en)
|
2011-08-16 |
2012-10-16 |
Varian Semiconductor Equipment Associates, Inc. |
Apparatus and method for three dimensional ion processing
|
|
US8339752B1
(en)
|
2011-09-26 |
2012-12-25 |
Hitachi Global Storage Technologies Netherlands B.V. |
Magnetic head with wide sensor back edge, low resistance, and high signal to-noise ratio and methods of production thereof
|
|
US8881066B2
(en)
*
|
2011-12-29 |
2014-11-04 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Mandrel modification for achieving single fin fin-like field effect transistor (FinFET) device
|
|
US9252021B2
(en)
*
|
2012-02-09 |
2016-02-02 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method for patterning a plurality of features for Fin-like field-effect transistor (FinFET) devices
|
|
US8765608B2
(en)
*
|
2012-05-01 |
2014-07-01 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Methods for forming trenches
|
|
US9653309B2
(en)
|
2012-05-25 |
2017-05-16 |
The Regents Of The University Of California |
Method for fabrication of high aspect ratio trenches and formation of nanoscale features therefrom
|
|
US8637365B2
(en)
|
2012-06-06 |
2014-01-28 |
International Business Machines Corporation |
Spacer isolation in deep trench
|
|
DE112013003293B4
(de)
*
|
2012-06-29 |
2020-09-24 |
Canon Anelva Corporation |
Ionenstrahlbearbeitungsverfahren und Ionenstrahlbearbeitungsgerät
|
|
US9118001B2
(en)
|
2012-07-11 |
2015-08-25 |
Varian Semiconductor Equipment Associates, Inc. |
Techniques for treating sidewalls of patterned structures using angled ion treatment
|
|
US9190498B2
(en)
|
2012-09-14 |
2015-11-17 |
Varian Semiconductor Equipment Associates, Inc. |
Technique for forming a FinFET device using selective ion implantation
|
|
US9287178B2
(en)
|
2012-10-01 |
2016-03-15 |
Globalfoundries Inc. |
Multi-gate field effect transistor (FET) including isolated fin body
|
|
DE112013006262B4
(de)
|
2012-12-28 |
2024-06-13 |
Mitsubishi Electric Corporation |
Siliciumcarbid-Halbleitervorrichtung und Verfahren zu ihrer Herstellung
|
|
WO2014110379A1
(en)
|
2013-01-11 |
2014-07-17 |
Fei Company |
Ion implantation to alter etch rate
|
|
US9153478B2
(en)
|
2013-03-15 |
2015-10-06 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Spacer etching process for integrated circuit design
|
|
US8791024B1
(en)
*
|
2013-05-14 |
2014-07-29 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method to define multiple layer patterns using a single exposure
|
|
US20140357080A1
(en)
|
2013-06-04 |
2014-12-04 |
Tokyo Electron Limited |
Method for preferential shrink and bias control in contact shrink etch
|
|
KR101509529B1
(ko)
|
2013-07-31 |
2015-04-07 |
아주대학교산학협력단 |
3차원 형태의 구리 나노구조물 및 그 형성 방법
|
|
US9934981B2
(en)
|
2013-09-26 |
2018-04-03 |
Varian Semiconductor Equipment Associates, Inc. |
Techniques for processing substrates using directional reactive ion etching
|
|
US9287123B2
(en)
|
2014-04-28 |
2016-03-15 |
Varian Semiconductor Equipment Associates, Inc. |
Techniques for forming angled structures for reduced defects in heteroepitaxy of semiconductor films
|
|
US10008384B2
(en)
*
|
2015-06-25 |
2018-06-26 |
Varian Semiconductor Equipment Associates, Inc. |
Techniques to engineer nanoscale patterned features using ions
|