JP2019514066A5 - - Google Patents

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Publication number
JP2019514066A5
JP2019514066A5 JP2018553884A JP2018553884A JP2019514066A5 JP 2019514066 A5 JP2019514066 A5 JP 2019514066A5 JP 2018553884 A JP2018553884 A JP 2018553884A JP 2018553884 A JP2018553884 A JP 2018553884A JP 2019514066 A5 JP2019514066 A5 JP 2019514066A5
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JP
Japan
Prior art keywords
layer
mandrel
sidewall spacers
forming
etching
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JP2018553884A
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English (en)
Japanese (ja)
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JP7009681B2 (ja
JP2019514066A (ja
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Priority claimed from PCT/US2017/027693 external-priority patent/WO2017181057A1/en
Publication of JP2019514066A publication Critical patent/JP2019514066A/ja
Publication of JP2019514066A5 publication Critical patent/JP2019514066A5/ja
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JP2018553884A 2016-04-14 2017-04-14 複数の材料を有する層を用いて基板をパターン化する方法 Active JP7009681B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662322603P 2016-04-14 2016-04-14
US62/322,603 2016-04-14
PCT/US2017/027693 WO2017181057A1 (en) 2016-04-14 2017-04-14 Method for patterning a substrate using a layer with multiple materials

Publications (3)

Publication Number Publication Date
JP2019514066A JP2019514066A (ja) 2019-05-30
JP2019514066A5 true JP2019514066A5 (https=) 2020-05-28
JP7009681B2 JP7009681B2 (ja) 2022-01-26

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JP2018553884A Active JP7009681B2 (ja) 2016-04-14 2017-04-14 複数の材料を有する層を用いて基板をパターン化する方法

Country Status (6)

Country Link
US (2) US10460938B2 (https=)
JP (1) JP7009681B2 (https=)
KR (1) KR102346568B1 (https=)
CN (1) CN109075123B (https=)
TW (1) TWI661466B (https=)
WO (1) WO2017181057A1 (https=)

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US9824893B1 (en) 2016-06-28 2017-11-21 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
US12051589B2 (en) 2016-06-28 2024-07-30 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
TW201830517A (zh) * 2016-11-16 2018-08-16 日商東京威力科創股份有限公司 用於多重圖案化程序之硬遮罩過蝕刻的調節方法
KR102722138B1 (ko) 2017-02-13 2024-10-24 램 리써치 코포레이션 에어 갭들을 생성하는 방법
US10546748B2 (en) 2017-02-17 2020-01-28 Lam Research Corporation Tin oxide films in semiconductor device manufacturing
US10727045B2 (en) * 2017-09-29 2020-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing a semiconductor device
US10366917B2 (en) * 2018-01-04 2019-07-30 Globalfoundries Inc. Methods of patterning variable width metallization lines
WO2019152362A1 (en) * 2018-01-30 2019-08-08 Lam Research Corporation Tin oxide mandrels in patterning
KR102841279B1 (ko) 2018-03-19 2025-07-31 램 리써치 코포레이션 챔퍼리스 (chamferless) 비아 통합 스킴 (scheme)
US10573520B2 (en) 2018-06-12 2020-02-25 International Business Machines Corporation Multiple patterning scheme integration with planarized cut patterning
US10950442B2 (en) * 2018-07-06 2021-03-16 Tokyo Electron Limited Methods to reshape spacers for multi-patterning processes using thermal decomposition materials
CN113016053B (zh) 2018-11-16 2025-08-19 朗姆研究公司 气泡缺陷减少
EP3660890B1 (en) * 2018-11-27 2021-08-11 IMEC vzw A method for forming an interconnection structure
CN111415860B (zh) * 2019-01-07 2026-01-30 东京毅力科创株式会社 用于对基底进行多重图案化的方法
US11145509B2 (en) * 2019-05-24 2021-10-12 Applied Materials, Inc. Method for forming and patterning a layer and/or substrate
US11551938B2 (en) 2019-06-27 2023-01-10 Lam Research Corporation Alternating etch and passivation process
CN113363203B (zh) * 2020-03-05 2024-07-16 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
US11776812B2 (en) * 2020-05-22 2023-10-03 Tokyo Electron Limited Method for pattern reduction using a staircase spacer
WO2022020507A1 (en) * 2020-07-23 2022-01-27 Lam Research Corporation Advanced self aligned multiple patterning using tin oxide
TW202311555A (zh) 2021-04-21 2023-03-16 美商蘭姆研究公司 最小化錫氧化物腔室清潔時間
US20240419074A1 (en) * 2023-06-14 2024-12-19 Tokyo Electron Limited Formation of sub-lithographic mandrel patterns using reversible overcoat

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KR100674970B1 (ko) * 2005-04-21 2007-01-26 삼성전자주식회사 이중 스페이서들을 이용한 미세 피치의 패턴 형성 방법
US7829262B2 (en) * 2005-08-31 2010-11-09 Micron Technology, Inc. Method of forming pitch multipled contacts
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US8575032B2 (en) * 2011-05-05 2013-11-05 Micron Technology, Inc. Methods of forming a pattern on a substrate
US8629040B2 (en) * 2011-11-16 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for epitaxially growing active regions between STI regions
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