JP2019204916A - チャックテーブル - Google Patents
チャックテーブル Download PDFInfo
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- JP2019204916A JP2019204916A JP2018100421A JP2018100421A JP2019204916A JP 2019204916 A JP2019204916 A JP 2019204916A JP 2018100421 A JP2018100421 A JP 2018100421A JP 2018100421 A JP2018100421 A JP 2018100421A JP 2019204916 A JP2019204916 A JP 2019204916A
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- chuck table
- annular wall
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- 230000002093 peripheral effect Effects 0.000 claims abstract description 46
- 238000012545 processing Methods 0.000 claims abstract description 17
- 238000007747 plating Methods 0.000 claims description 93
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 62
- 229910052759 nickel Inorganic materials 0.000 claims description 30
- 239000000919 ceramic Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 abstract description 5
- 239000000243 solution Substances 0.000 description 17
- 238000004140 cleaning Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 239000003638 chemical reducing agent Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 1
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000012085 test solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemically Coating (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
- Milling, Broaching, Filing, Reaming, And Others (AREA)
- Gripping On Spindles (AREA)
- Dicing (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
ここで、バイト工具で支持ピンの上面を旋削しやすくするために、支持ピンの上面に厚さが200μm程度のニッケル等のメッキ層を形成している。このメッキ層を定期的に数μmずつ旋削して支持ピンの高さを揃えている。
ロボット330の可動域には、旋削加工済みの板状ワークWを洗浄する洗浄手段334が配設されている。洗浄手段334は、例えば、枚葉式のスピンナー洗浄装置である。
また、外周環状壁300の外側面300d及び内側面300cも、メッキ層Mが所定の厚さで形成されている。
底板303の内部には、吸引路303dが設けられており、吸引路303dは各吸引口301cに連通すると共に、バキュームポンプやエジェクター等の真空発生装置からなる吸引源36に連通している。
また、各支持ピン302の側面302cも、メッキ層Mが所定の厚さで形成されている。
メッキ槽20には、タンクAから金属ニッケルが、タンクBから還元剤が、タンクCからpH調整液が、各定量ポンプA1、B1、及びC1によって補充可能となっている。
図示しないポンプにより、メッキ槽20内から採られた検査液は、流路272を通り、水槽271内で所定温度まで下げられた後、メッキコントローラー270に送り込まれる。
メッキコントローラー270は、検査液のニッケル濃度を比色計で、pH値をpH計で連続測定して、各値が設定値を外れると各定量ポンプA1、B1、及びC1に配線274を介して信号を送る。そして、各定量ポンプA1、B1、及びC1が作動して、金属ニッケル、還元剤、又はpH調整液を所定量ずつメッキ槽20に補給して、メッキ槽20内のニッケルメッキ液のパラメータ調整を行う。また、メッキ槽20内のニッケルメッキ液の各数値が設定値に戻ると、メッキコントローラー270より各定量ポンプA1、B1、及びC1に停止信号が送られ、自動的に補給が停止される。
メッキ槽20内には、膜厚モニター25に電気的に接続される測定センサー250が浸されている。膜厚モニター25は、測定センサー250により、被メッキ物のメッキ層の厚さ及びメッキ速度を測定可能であり、例えば、その原理は測定センサー250のセンサーヘッドに装着された水晶振動子の発信周波数が、振動子上にメッキ層が析出するにつれて減衰してゆくことを利用したものである。膜厚モニター25は、この発信周波数の減衰速度からメッキ速度及び被メッキ物のメッキ層の厚さを換算して表示するようになっている。
なお、ニッケルメッキ液の温度を従来のように例えば90度に保ちつつメッキ層Mの形成を行うと、チャックテーブル30の熱変形が起こり得るため、本実施形態のようにニッケルメッキ液の温度を約70℃に保つと好ましい。
例えば、図2に示すY軸移動手段14が、加工装置1にセットされたチャックテーブル30を図1に示すバイト旋削手段6の真下より少し+Y方向の位置まで移動させることで、チャックテーブル30が旋削送りの開始位置に位置付けられる。
まず、図1に示す板状ワークWが載置されていない状態のチャックテーブル30が、第一の搬送手段335の近傍まで移動する。ロボット330が第一のカセット331から一枚の板状ワークWを引き出し、板状ワークWを仮置きテーブル333aに移動させる。
バイト旋削手段6が加工送り手段5により−Z方向へと送られ、図8に示すように、バイト工具64の最下端となる切り刃641が板状ワークWの上面Waに所定量切り込む高さ位置にバイト旋削手段6が位置付けられる。さらに、モータ62が+Z方向から見て時計回り方向にスピンドル60を所定の回転速度で回転させ、これに伴って、バイト工具64がスピンドル60を軸に時計回り方向に所定の回転速度で周回する。
そして、Y軸方向の所定の位置までチャックテーブル30が−Y方向に移動し、周回するバイト工具64により板状ワークWの上面Wa全面が平坦面になるように旋削される。
1:加工装置 10:ベース 11:コラム 19:入力手段
14:Y軸移動手段 17:厚さ測定手段 18:支持ブリッジ
330:ロボット 331:第一のカセット 332:第二のカセット
333a:仮置きテーブル 333b:位置合わせ手段 334:洗浄手段
335:第一の搬送手段 336:第二の搬送手段
30:チャックテーブル 300:外周環状壁 301:吸引凹部 301c:吸引口 302:円柱状の支持ピン 304:円錐台または角錐台の支持ピン
34:回転手段 36:吸引源
5:加工送り手段 6:バイト旋削手段 64:バイト工具
Claims (3)
- 板状ワークの下面を吸引保持して上面をバイト工具で旋削加工する加工装置に用いられるチャックテーブルであって、
該板状ワークの下面の外周部分を環状の上面で支持する外周環状壁と、該外周環状壁の内側に形成され該外周環状壁の上面より低い底面を有する吸引凹部と、該吸引凹部の該底面に形成され吸引源に連通する吸引口と、該吸引口を避けて該底面に等間隔で複数立設され該外周環状壁の上面と上面が同一高さである支持ピンと、該外周環状壁の側面と上面及び該支持ピンの側面と上面とにメッキ層が形成されたチャックテーブル。 - 前記外周環状壁と前記吸引凹部と前記支持ピンとをファインセラミックスで構成し、前記メッキ層は無電解ニッケルメッキで形成した請求項1記載のチャックテーブル。
- 前記支持ピンは、前記上面を有する円錐台または角錐台で前記底面から立設される請求項1又は2記載のチャックテーブル。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2018100421A JP7108464B2 (ja) | 2018-05-25 | 2018-05-25 | チャックテーブル |
KR1020190045988A KR102644407B1 (ko) | 2018-05-25 | 2019-04-19 | 척 테이블 |
TW108117713A TWI809107B (zh) | 2018-05-25 | 2019-05-22 | 卡盤台 |
CN201910434221.2A CN110534471B (zh) | 2018-05-25 | 2019-05-23 | 卡盘工作台 |
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JP2018100421A JP7108464B2 (ja) | 2018-05-25 | 2018-05-25 | チャックテーブル |
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JP2019204916A true JP2019204916A (ja) | 2019-11-28 |
JP7108464B2 JP7108464B2 (ja) | 2022-07-28 |
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JP2018100421A Active JP7108464B2 (ja) | 2018-05-25 | 2018-05-25 | チャックテーブル |
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JP (1) | JP7108464B2 (ja) |
KR (1) | KR102644407B1 (ja) |
CN (1) | CN110534471B (ja) |
TW (1) | TWI809107B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113649842A (zh) * | 2021-08-30 | 2021-11-16 | 成都工贸职业技术学院 | 一种便于组装的真空吸盘装夹 |
KR20230077656A (ko) | 2021-11-25 | 2023-06-01 | 가부시기가이샤 디스코 | 가공 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0230159A (ja) * | 1988-07-20 | 1990-01-31 | Nikon Corp | 基板吸着装置 |
JP2001203245A (ja) * | 1999-08-30 | 2001-07-27 | Ibiden Co Ltd | ウエハプローバおよびウエハプーバに使用されるセラミック基板 |
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JP6757223B2 (ja) * | 2016-10-03 | 2020-09-16 | 株式会社ディスコ | バイト切削装置 |
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JP2001203245A (ja) * | 1999-08-30 | 2001-07-27 | Ibiden Co Ltd | ウエハプローバおよびウエハプーバに使用されるセラミック基板 |
JP2010036321A (ja) * | 2008-08-07 | 2010-02-18 | Disco Abrasive Syst Ltd | バイト工具を備えた加工装置 |
JP2017212374A (ja) * | 2016-05-26 | 2017-11-30 | 日本特殊陶業株式会社 | 基板保持装置及びその製造方法 |
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CN113649842A (zh) * | 2021-08-30 | 2021-11-16 | 成都工贸职业技术学院 | 一种便于组装的真空吸盘装夹 |
CN113649842B (zh) * | 2021-08-30 | 2022-06-28 | 成都工贸职业技术学院 | 一种便于组装的真空吸盘装夹 |
KR20230077656A (ko) | 2021-11-25 | 2023-06-01 | 가부시기가이샤 디스코 | 가공 장치 |
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CN110534471B (zh) | 2024-02-09 |
KR102644407B1 (ko) | 2024-03-06 |
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KR20190134466A (ko) | 2019-12-04 |
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