TWI809107B - 卡盤台 - Google Patents

卡盤台 Download PDF

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TWI809107B
TWI809107B TW108117713A TW108117713A TWI809107B TW I809107 B TWI809107 B TW I809107B TW 108117713 A TW108117713 A TW 108117713A TW 108117713 A TW108117713 A TW 108117713A TW I809107 B TWI809107 B TW I809107B
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chuck table
plate
shaped workpiece
outer peripheral
annular wall
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森俊
波岡伸一
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日商迪思科股份有限公司
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
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    • H—ELECTRICITY
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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    • H—ELECTRICITY
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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Abstract

[課題]在銷卡盤台中，將做旋削加工時不會剝落的鍍層，形成在不易受熱變形的材質上。[解決手段]一種卡盤台30，使用於吸引保持板狀工件W的下表面Wb並以車刀工具64旋削加工該板狀工件的上表面Wa的加工裝置1；該卡盤台具備：外周環狀壁300，以環狀的上表面300a支撐板狀工件的下表面Wb的外周部分；吸引凹部301，形成在外周環狀壁300的內側，且具有比外周環狀壁300的上表面300a還低的底面301b；吸引口301c，形成在吸引凹部301的底面301b且連通吸引源36；以及，支撐銷304，避開吸引口301c且等間隔地多個立設在底面301b，且上表面304a與外周環狀壁300的上表面300a為相同高度；其中，鍍層M形成在外周環狀壁300的側面300c、300d與上表面300a以及支撐銷304的側面304c與上表面304a。

Description

卡盤台
本發明係關於一種保持板狀工件的卡盤台。
使用於以車刀工具旋削加工板狀工件的加工裝置的卡盤台例如是由如後述構件所構成：外周環狀保持部，形成在外周側；吸引凹部，形成在該外周環狀保持部的內側且連通吸引手段；以及，多個支撐銷，形成在該吸引凹部內（例如參照專利文獻1）。像這樣構成的卡盤台藉由以多個支撐銷支撐板狀工件，因為支撐銷的支撐面積小，所以廢料等的異物不會被夾入至卡盤台與板狀工件之間，從而能平坦地保持板狀工件。
[習知技術文獻] [專利文獻] [專利文獻1]日本特開2005-333067號公報。
[發明所欲解決的課題] 然而卡盤台因經年累月變化而產生機械性偏差，會使支撐銷的上表面的高度有些微的位移。因此，藉由車刀工具旋削卡盤台的上表面（外周環狀保持部的上表面與各支撐銷的上表面），從而使支撐銷的高度一致。 於此，為了使車刀工具容易旋削支撐銷的上表面，在支撐銷的上表面係形成有厚度為200μm左右的鎳等的鍍層。並定期地旋削此鍍層數μm而使支撐銷的高度一致。
像這樣以車刀工具旋削鍍層時，鍍層被施力而會有鍍層剝落的問題。又，為了形成200μm這樣厚的鍍層較佳為使用電鍍法，惟能做電鍍法的材質容易受熱變形。因此，當卡盤台的各部零件係由能做電鍍法的材質所形成時，則因車刀旋削時所產生的加工熱，會有支撐銷等受熱變形而導致保持的板狀工件無法成為均等的厚度的問題。
因此，在銷卡盤台中具有如後述的課題：將做旋削加工時不會剝落的鍍層，形成在不易受熱變形的材質上。
[解決課題的技術手段] 為解決上述課題，本發明係一種卡盤台，使用於吸引保持板狀工件的下表面並以車刀工具旋削加工該板狀工件的上表面的加工裝置；該卡盤台具備：外周環狀壁，以環狀的上表面支撐該板狀工件的下表面的外周部分；吸引凹部，形成在該外周環狀壁的內側，且具有比該外周環狀壁的上表面還低的底面；吸引口，形成在該吸引凹部的該底面且連通吸引源；以及，支撐銷，避開該吸引口且等間隔地多個立設在該底面，且上表面與該外周環狀壁的上表面為相同高度；其中，鍍層形成在該外周環狀壁的側面與上表面以及該支撐銷的側面與上表面。
該外周環狀壁、該吸引凹部以及該支撐銷係由精密陶瓷所構成，該鍍層較佳為由無電鍍鎳所形成。
該支撐銷較佳為以具有該支撐銷的上表面的圓錐台或角錐台從該底面立設而成。
[發明功效] 本發明的卡盤台因為外周環狀壁的上表面與支撐銷的上表面為相同高度，且鍍層形成在外周環狀壁的側面與上表面以及支撐銷的側面與上表面，所以在以車刀工具旋削加工鍍層時鍍層不易剝落。
又，卡盤台的外周環狀壁、吸引凹部以及支撐銷係由精密陶瓷所構成，且鍍層係由無電鍍鎳所形成，藉此卡盤台難以因旋削加工時的加工熱而受熱變形，故能將保持的板狀工件旋削加工為均等的厚度。
藉由支撐銷是以具有該支撐銷的上表面的圓錐台或角錐台從吸引凹部的底面立設而成，因為支撐銷的上表面與側面（斜面）之間的角度呈鈍角，所以使鍍層變得更不易剝落。
圖1所示的加工裝置1為如後述的裝置：藉由具備車刀工具64的車刀旋削手段6，旋削加工保持在本發明的卡盤台30上的板狀工件W。加工裝置1的基座10上的前方（-Y方向側）係成為相對於卡盤台30進行板狀工件W的拆裝的區域，而基座10上的後方（+Y方向側）則成為藉由車刀旋削手段6進行保持在卡盤台30上的板狀工件W的旋削加工的區域。
圖1所示的板狀工件W例如是以矽為原料且外形為圓形的半導體晶圓，惟本發明並非限定為此。然後，板狀工件W的上表面Wa係成為被旋削加工的被加工面。板狀工件W的下表面Wb則被未圖示的保護膠膜所黏貼保護。
在加工裝置1的基座10的前方側，配設有操作員用以輸入加工條件等的輸入手段19。又，在基座10上的前方側，還配設有容納旋削加工前的板狀工件W的第一卡匣331與容納完成旋削加工的板狀工件W的第二卡匣332。在第一卡匣331與第二卡匣332之間，配設有如後述的機械具330：其將旋削加工前的板狀工件W從第一卡匣331搬出，同時將完成旋削加工的板狀工件W搬入至第二卡匣332。
在機械具330的可動區域，設有暫置加工前的板狀工件W的暫置台333a，在暫置台333a則配設有對位手段333b。對位手段333b係以縮徑的對位銷將從第一卡匣331搬出且載置於暫置台333a的板狀工件W對位（定中心）在預定的位置。 在機械具330的可動區域，還配設有清洗完成旋削加工的板狀工件W的清洗手段334。清洗手段334例如是枚葉式的旋轉清洗裝置。
在對位手段333b的附近係配設有第一搬送手段335，在清洗手段334的附近則配設有第二搬送手段336。第一搬送手段335將載置於暫置台333a且將經中心校正的旋削加工前的板狀工件W搬送至卡盤台30，第二搬送手段336則將保持在卡盤台30的完成旋削加工的板狀工件W搬送至清洗手段334。
如圖2所示，卡盤台30被可同時與卡盤台30移動的蓋體39包圍住周圍，且藉由配設在卡盤台30的下方的旋轉手段34呈可繞Z軸方向的軸心旋轉。
如圖1、2所示，在卡盤台30、蓋體39以及連結於蓋體39的蛇腹蓋體39a的下方，配設有使卡盤台30往Y軸方向移動的Y軸移動手段14。圖2所示的Y軸移動手段14具備：滾珠螺桿140，具有Y軸方向的軸心；一對導軌141，與滾珠螺桿140平行地配置；馬達142，連結於滾珠螺桿140且轉動滾珠螺桿140；以及可動板143，內部所具備的螺帽係螺合滾珠螺桿140，且底部係滑動於導軌141上；當馬達142轉動滾珠螺桿140，則伴隨此動作可動板143會被導軌141所導引而往Y軸方向移動，且經由旋轉手段34而配設在可動板143上的卡盤台30與蓋體39會往Y軸方向移動。又，蛇腹蓋體39a會伴隨著卡盤台30的移動而往Y軸方向伸縮。
如圖1所示，在基座10上的後部側（+Y方向側）係立設有柱體11，在柱體11的前面則配設有如後述的加工進給手段5：其使車刀旋削手段6往相對於卡盤台30為遠離或靠近的Z軸方向（垂直方向）做加工進給。圖1、3所示的加工進給手段5具備：滾珠螺桿50，具有Z軸方向的軸心；一對導軌51，與滾珠螺桿50平行地配置；馬達52，連結於滾珠螺桿50的上端且轉動滾珠螺桿50；升降板53，內部的螺帽係螺合滾珠螺桿50，且側部係滑接於導軌51上；以及保持架54，固定在升降板53且保持車刀旋削手段6；伴隨著馬達52轉動滾珠螺桿50，升降板53會被導軌51所導引而往Z軸方向往返移動，且保持在保持架54的車刀旋削手段6會往Z軸方向加工進給。
車刀旋削手段6具備：主軸60，軸方向為垂直方向（Z軸方向）；殼體61，可旋轉地支撐主軸60；馬達62，旋轉驅動主軸60；圓形的車刀輪63，連接於主軸60的下端；以及車刀工具64，可拆裝地裝設在車刀輪63上。
如圖3所示，在車刀輪63係配設有供車刀工具64插入嵌合的插嵌孔630，車刀工具64具備：長方體狀的刀柄640，插入嵌合於插嵌孔630且被固定螺栓631固定；以及切刃641，尖狀地形成在刀柄640的下端。切刃641例如是將金剛石等的磨粒與預定的接合料做燒結固定者。
如圖1所示，在基座10上係形成有被立設在基座10上的壁部100與柱體11所包圍的凹狀部分，此凹狀部分係成為如後述的清洗水容納部101：其承接從卡盤台30流下的清洗水，清洗水係在旋削加工時供給至板狀工件W與車刀工具64的加工點。在清洗水容納部101係形成有排水口102，含有旋削屑等的清洗水會從排水口102往未圖示的排水槽等排出。
在卡盤台30的移動路線的上方，配設有測量經旋削的板狀工件W的厚度的厚度測量手段17。厚度測量手段17被如後述的支撐橋18所支撐：其以跨越卡盤台30的方式立設在基座10上。厚度測量手段17為可往Z軸方向移動的直驅式線性量規，惟本發明並非限定為此，亦可例如是如後述的反射型光學感測器：具備發光部與受光部，並能以非接觸方式測量板狀工件W的厚度。舉例而言，厚度測量手段17係呈可往X軸方向往返移動。
圖2、4所示的本發明的卡盤台30係具備俯視呈圓形的底板303，且外周環狀壁300係一體地從底板303的上表面外周區域往+Z方向立設。在圖4所示的外周環狀壁300的環狀的上表面300a，以預定的厚度形成有鍍層M，外周環狀壁300係隔著鍍層M以環狀的上表面300a支撐板狀工件W的下表面Wb的外周部分。 又，在外周環狀壁300的外側面300d與內側面300c，同樣以預定的厚度形成有鍍層M。
形成在外周環狀壁300內側的空間係成為如後述的吸引凹部301：其具有比外周環狀壁300的上表面300a低的底面301b（底板303的上表面）。在該吸引凹部301的底面301b，例如有吸引口301c隔開預定間隔均等地配設在圓周方向。吸引口301c的配設數在圖4所示的例子中為4個，惟本發明並非限定為此。 在底板303的內部則設有吸引通道303d，吸引通道303d連通於各吸引口301c，同時還連通至由真空幫浦或噴射器等的真空產生裝置所形成的吸引源36。
在吸引凹部301內，多個支撐銷302係避開吸引口301c且以等間隔立設在底面301b，各支撐銷302的上表面302a與外周環狀壁300的上表面300a係整列為相同的高度。又，在各支撐銷302的上表面302a係形成有鍍層M，而形成在外周環狀壁300的環狀上表面300a的鍍層M與形成在支撐銷302的上表面302a的鍍層M係呈約略相同的厚度。 又，在各支撐銷302的側面302c，也同樣以預定的厚度形成有鍍層M。
舉例而言，外周環狀壁300、吸引凹部301的底面301b（亦即底板303）以及支撐銷302係由精密陶瓷所構成。精密陶瓷例如是熱膨脹係數極低且具有良好耐熱衝擊性與機械強度的堇青石（2MgO・2Al2 O3 ・5SiO2 ）。
各支撐銷302在圖4所示的例子中，其外形係呈圓柱，惟較佳為如圖5所示的外形為圓錐台或角錐台的支撐銷304。支撐銷304的上表面304a與側面（斜面）304c之間的角度呈鈍角。
以下，說明對圖5所示的卡盤台30的外周環狀壁300的內側面300c、外側面300d以及上表面300a，以及支撐銷304的側面304c與上表面304a形成鍍層M的一例子。在本實施形態中，鍍層M例如是使用圖6所示的無電鍍鎳裝置2所形成。附帶一提的是，鍍層M的形成並非限定為使用圖6所示的無電鍍鎳裝置2的例子者，形成的鍍層M亦可為由鎳以外的金屬所構成者。
圖6所示的無電鍍鎳裝置2的鍍槽20係存放有：含有還原劑與pH調整液的硫酸鎳、硝酸鎳或胺磺酸鎳等的鎳鍍液。鍍槽20係配設在恆溫水槽21中，並可調整鎳鍍液的溫度。 鍍槽20可藉由各定量幫浦A1、B1及C1分別從儲存槽A補充金屬鎳、從儲存槽B補充還原劑、從儲存槽C補充pH調整液。
鍍槽20內的鎳鍍液當產生無電鍍反應時，則會產生由溶液中還原劑的電子所導致的金屬離子的還原析出，從而溶液中的鎳濃度、還原劑濃度以及pH值會變化。為了在卡盤台30形成均等厚度的鍍層M，必須將該等參數長時間維持在一定範圍內，而無電鍍鎳裝置2則具備用以實現此功能的檢測部27。
檢測部27例如是具備電鍍控制器270，以及將從鍍槽20內所採取出的檢查液冷卻至預定溫度（檢查溫度）的水槽271。 藉由未圖示的幫浦，從鍍槽20內所採取出的檢查液會通過流路272，在水槽217內降低至預定溫度後再送往電鍍控制器270。 電鍍控制器270係以比色計連續測量檢查液的鎳濃度，並以pH計連續測量pH值，當各數值非設定值時，藉由配線274對各定量幫浦A1、B1以及C1傳送訊號。然後，各定量幫浦A1、B1以及C1會啟動並對鍍槽20補充預定量的金屬鎳、還原劑或pH調整液，從而進行鍍槽20內的鎳鍍液的參數調整。又，當鍍槽20內的鎳鍍液的各數值恢復為設定值，則電鍍控制器270會對各定量幫浦A1、B1以及C1傳送停止訊號，從而自動地停止補充。
鍍槽20內的鎳鍍液藉由馬達等的旋轉驅動源220使扇葉221旋轉做攪拌，從而整體的濃度會均等化。 在鍍槽20內，浸有電性連接至膜厚度監控器25的測量感測器250。膜厚度監控器25能藉由測量感測器250測量被鍍物的鍍層厚度與電鍍速度，舉例而言，其原理可為利用如後述者：裝設在測量感測器250的感測頭上的石英振盪器的振盪頻率，隨著鍍層沉澱在振盪器上而逐漸衰減。膜厚度監控器25從此振盪頻率的衰減速度換算出電鍍速度與被鍍物的鍍層厚度並做顯示。
使用如上述構成的無電鍍鎳裝置2，而將鍍層M形成在圖5所示的卡盤台30的外周環狀壁300的內側面300c、外側面300d以及上表面300a，且形成在支撐銷304的側面304c與上表面304a，在此情況，會例如在圖5所示的卡盤台30的各吸引口301c施以防止鎳鍍液進入至吸引通道303d內的遮罩。
然後，使圖5所示的卡盤台30從支撐銷304的上表面304a側往圖6所示的鍍槽20內的鎳鍍液做浸漬。附帶一提的是，至少卡盤台30的下表面305會成為從鎳鍍液突出的狀態。又，舉例而言，亦可為只使比圖5所示的卡盤台30的假想線L1還上側的部分（比底面301b還上側的部分）浸漬於鎳鍍液。在此情況，則不需吸引口301c的遮罩，外周環狀壁300的外側面300d會只在比假想線L1還上側的部分形成鍍層M。
藉由來自鎳鍍液中的還原劑的電子，鎳離子會以均等的厚度還原析出在圖5所示的卡盤台30的外周環狀壁300的內側面300c、外側面300d以及上表面300a，且還原析出在支撐銷304的側面304c與上表面304a。然後，如先前所說明，會一邊由圖6所示的檢測部27進行鎳鍍液的各參數的調整、鎳鍍液的溫度調整（例如維持在約70℃），並由膜厚度監控器25進行鍍層M的厚度監控，一邊進行預定時間（例如2天）的無電鍍鎳，從而形成圖5所示的預定厚度（例如200μm）的鍍層M。 附帶一提的是，當鎳鍍液的溫度如習知般例如是維持在90度而形成鍍層M，則可能會引起卡盤台30的受熱變形，故較佳為如本實施形態將鎳鍍液的溫度維持在約70℃。
以下，使用圖1、圖2以及圖7，針對如後述的情況做說明：旋削圖7所示的卡盤台30（例如是從無電鍍鎳裝置2搬出的卡盤台30）的鍍層M，從而在卡盤台30形成平坦的保持面。 舉例而言，圖2所示的Y軸移動手段14會使設置在加工裝置1的卡盤台30移動至比圖1所示的車刀旋削手段6的正下方還稍微靠+Y方向的位置，藉此卡盤台30會定位在旋削進給的開始位置。
然後車刀旋削手段6被加工進給手段5送往-Z方向，如圖7所示，車刀旋削手段6被定位在如後述的高度位置：成為車刀工具64的最下端的切刃641會以預定量（例如數μm）切入至形成在支撐銷304的上表面304a的鍍層M，以及切入至形成在外周環狀壁300的上表面300a的鍍層M。更進一步，馬達62使主軸60以預定的旋轉速度往從+Z方向觀看為順時針的方向旋轉，伴隨此動作，車刀工具64會以主軸60為軸並以預定的旋轉速度往順時針方向旋轉。
圖2所示的Y軸移動手段14係使卡盤台30往-Y方向移動，藉此如圖7所示，車刀工具64會旋削形成在外周環狀壁300的上表面300a的鍍層M，接著旋削形成在支撐銷304的上表面304a的鍍層M而使鍍層平坦化，使形成在各支撐銷304的上表面304a的鍍層M高度與形成在外周環狀壁300的上表面300a的鍍層M高度變為一致。然後，在卡盤台30上會形成如後述的平坦的保持面306（參照圖8）：由各支撐銷304的上表面304a與外周環狀壁300的上表面300a以同一平面的方式所組成。
本發明的卡盤台30因為外周環狀壁300的上表面300a與支撐銷304的上表面304a為相同高度，且鍍層M形成在外周環狀壁300的內側面300c、外側面300d以及上表面300a，還形成在支撐銷304的側面304c與上表面304a，所以在車刀工具64旋削加工鍍層M時，形成在上表面300a與上表面304a的鍍層M會被一體地形成在內側面300c、外側面300d以及側面304c的鍍層M所補強，從而變得不易剝落。
又，如圖5、7所示，支撐銷304為藉由以具有上表面304a的圓錐台或角錐台立設在吸引凹部301的底面301b，因為支撐銷304的上表面304a與側面（斜面）304c之間的角度呈鈍角，所以能使鍍層M更不易剝落。
以下，針對使用圖1所示加工裝置1與具備圖8所示平坦的保持面306的卡盤台30以旋削板狀工件W的情況做說明。 首先，圖1所示的未載置板狀工件W的狀態的卡盤台30係移動至第一搬送手段335的附近。機械具330從第一卡匣331拉出一片板狀工件W，並將板狀工件W移動至暫置台333a。
藉由對位手段333b使板狀工件W在暫置台333a上被定中心後，第一搬送手段335則使已被定中心的板狀工件W移動至卡盤台30上。然後，如圖8所示，以卡盤台30的中心約略一致於板狀工件W的中心的方式，板狀工件W會載置於平坦的保持面306上。像這樣當板狀工件W載置於卡盤台30上，則成為如後述的狀態：板狀工件W的下表面Wb會隔著鍍層M被各支撐銷304所支撐，同時板狀工件W的下表面Wb的外周部分係隔著鍍層M被支撐在外周環狀壁300的上表面300a上。
然後，吸引源36啟動而產生的吸引力會通過吸引通道303d與吸引口301c而傳達至吸引凹部301，藉此卡盤台30將板狀工件W吸引保持在保持面306上。附帶一提的是，保持面306因為先前鍍層M的旋削而成為平坦面，所以卡盤台30不會產生真空外漏。
舉例而言，圖2所示的Y軸移動手段14會使吸引保持住板狀工件W的卡盤台30移動至比車刀旋削手段6的正下方還稍微靠+Y方向的位置，藉此卡盤台30會定位在旋削進給的開始位置。 車刀旋削手段6會被加工進給手段5被送往-Z方向，如圖8所示，車刀旋削手段6被定位在如後述的高度位置：成為車刀工具64的最下端的切刃641會以預定量切入板狀工件W的上表面Wa。更進一步，馬達62使主軸60以預定的旋轉速度往從+Z方向觀看為順時針的方向旋轉，伴隨此動作，車刀工具64會以主軸60為軸並以預定的旋轉速度往順時針方向旋轉。
吸引保持板狀工件W的卡盤台30係以預定的進給速度往-Y方向移動，如圖8所示，車刀工具64係旋削板狀工件W的上表面Wa並使其平坦化。又，圖1所示的厚度測量手段17會下降，接觸板狀工件W被旋削的上表面Wa而測量板狀工件W的厚度。 然後，卡盤台30會往-Y方向移動至Y軸方向的預定位置，被旋轉的車刀工具64旋削以使板狀工件W的上表面Wa整面變成平坦面。
本發明的卡盤台30中，卡盤台30的外周環狀壁300、吸引凹部301以及各支撐銷304係由精密陶瓷所構成，且鍍層M由無電鍍鎳所形成，藉此卡盤台30幾乎不會發生因旋削加工時的加工熱所產生的受熱變形，故能將保持的板狀工件W以平坦的保持面306（各支撐銷304的上表面304a與外周環狀壁300的上表面300a）一邊保持並一邊旋削加工為均等的厚度。
W‧‧‧板狀工件Wa‧‧‧板狀工件的上表面 Wb‧‧‧板狀工件的下表面1‧‧‧加工裝置 10‧‧‧基座11‧‧‧柱體 19‧‧‧輸入手段14‧‧‧Y軸移動手段 17‧‧‧厚度測量手段18‧‧‧支撐橋 330‧‧‧機械具331‧‧‧第一卡匣 332‧‧‧第二卡匣333a‧‧‧暫置台 333b‧‧‧對位手段334‧‧‧清洗手段 335‧‧‧第一搬送手段336‧‧‧第二搬送手段 30‧‧‧卡盤台300‧‧‧外周環狀壁 301‧‧‧吸引凹部301c‧‧‧吸引口 302‧‧‧圓柱狀的支撐銷304‧‧‧圓錐台或角錐台狀的支撐銷 34‧‧‧旋轉手段36‧‧‧吸引源 5‧‧‧加工進給手段6‧‧‧車刀旋削手段 64‧‧‧車刀工具
圖1係表示配設有本發明的卡盤台的加工裝置一例子的立體圖。 圖2係表示卡盤台與Y軸方向移動手段一例子的立體圖。 圖3係表示旋削手段一例子的立體圖。 圖4係表示支撐銷為圓柱形狀的卡盤台一例子的剖面圖。 圖5係表示支撐銷為圓錐台形狀或角錐台形狀的卡盤台其他例子的剖面圖。 圖6係表示無電鍍鎳裝置一例子的說明圖。 圖7係表示旋削加工卡盤台的鍍層並形成平坦的保持面的狀態的剖面圖。 圖8係說明對保持在卡盤台的平坦的保持面上的板狀工件施以旋削加工的狀態的剖面圖。
30‧‧‧卡盤台
36‧‧‧吸引源
300‧‧‧環狀外周壁
300a‧‧‧上表面
300c‧‧‧內側面
300d‧‧‧外側面
301‧‧‧吸引凹部
301b‧‧‧底面
301c‧‧‧吸引口
303‧‧‧底板
303d‧‧‧吸引通道
304‧‧‧支撐銷
304a‧‧‧上表面
304c‧‧‧側面
305‧‧‧下表面
L1‧‧‧假想線
M‧‧‧鍍層
W‧‧‧板狀工件
Wa‧‧‧板狀工件的上表面
Wb‧‧‧板狀工件的下表面

Claims (3)

  1. 一種卡盤台，使用於吸引保持板狀工件的下表面並以車刀工具旋削加工該板狀工件的上表面的加工裝置；該卡盤台具備：外周環狀壁，以環狀的上表面支撐該板狀工件的下表面的外周部分；吸引凹部，形成在該外周環狀壁的內側，且具有比該外周環狀壁的上表面還低的底面；吸引口，形成在該吸引凹部的該底面且連通吸引源；以及，支撐銷，避開該吸引口且等間隔地多個立設在該底面，且上表面與該外周環狀壁的上表面為相同高度；其中，鍍層僅形成在該外周環狀壁的側面與上表面以及該支撐銷的側面與上表面。
  2. 如申請專利範圍第1項所述之卡盤台，其中，該外周環狀壁、該吸引凹部以及該支撐銷係由精密陶瓷所構成，該鍍層係由無電鍍鎳所形成。
  3. 如申請專利範圍第1項或第2項所述之卡盤台，其中，該支撐銷是以具有該支撐銷的上表面的圓錐台或角錐台從該底面立設而成。
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